//www.getgobooth.com/ 必威体育下载 daily 15 2024-08-20 10:33:40 apsoffice@iphy.ac.cn apsoffice@iphy.ac.cn 2024-08-20 10:33:40 zh Copyright ©Acta Physica Sinica All Rights Reserved. 京ICP备05002789号-1 Address: PostCode：100190 Phone: 010-82649829，82649241,82649863 Email: apsoffice@iphy.ac.cn Copyright ©Acta Physica Sinica All Rights Reserved apsoffice@iphy.ac.cn 1000-3290 //www.getgobooth.com/en/article/doi/10.7498/aps.15.341 Author(s): WANG YEH-NING, CHU CHIANG-CHUNG <br/><p>Internal friction in two kinds of iron-manganese alloy which contain Mn 17.5% and Mn 12.8% respectively and one kind of copper-aluminum alloy containing 13% Al were measured with a torsion pendulum, and internal friction peaks were observed in the temperature range in which the martensite or reverse martensite transformation is taken place. The condition for the appearance of this internal friction peak is that it occurs only when accompanied by the process of martensite-type transformation.Systematic observations were made with iron-manganese alloy containing 17.5% Mn, and it was found that the height of internal friction peak increases with the increase of the rate of heating (or cooling) or the stress, decreases with the increase of the frequency of vibration or the carbon content in the specimen. All these may be explained by the reason that the more the amount of new phase has transformed in one period of vibration, the larger is the internal friction.The mechanism of the internal friction peak was discussed. The conclusion was reached that because of the suddeness of the formation of martensite, the applied external forces due to torsion pendulum may be considered as constant during the time of formation for martensite plates, and since half of the work done by the external forces during the alteration must be lost as confirmed by the calculation of interaction energies between stresses and iuhomogenities, it consequently gives rise to the substantial portion of internal friction. On the other hand, the stress-induced phase transformation also gives rise to a minor portion of internal friction.</p> <br/>Acta Physica Sinica. 1959 15(7): 341-352. Published 1959-07-20 Author(s): WANG YEH-NING, CHU CHIANG-CHUNG <br/><p>Internal friction in two kinds of iron-manganese alloy which contain Mn 17.5% and Mn 12.8% respectively and one kind of copper-aluminum alloy containing 13% Al were measured with a torsion pendulum, and internal friction peaks were observed in the temperature range in which the martensite or reverse martensite transformation is taken place. The condition for the appearance of this internal friction peak is that it occurs only when accompanied by the process of martensite-type transformation.Systematic observations were made with iron-manganese alloy containing 17.5% Mn, and it was found that the height of internal friction peak increases with the increase of the rate of heating (or cooling) or the stress, decreases with the increase of the frequency of vibration or the carbon content in the specimen. All these may be explained by the reason that the more the amount of new phase has transformed in one period of vibration, the larger is the internal friction.The mechanism of the internal friction peak was discussed. The conclusion was reached that because of the suddeness of the formation of martensite, the applied external forces due to torsion pendulum may be considered as constant during the time of formation for martensite plates, and since half of the work done by the external forces during the alteration must be lost as confirmed by the calculation of interaction energies between stresses and iuhomogenities, it consequently gives rise to the substantial portion of internal friction. On the other hand, the stress-induced phase transformation also gives rise to a minor portion of internal friction.</p> <br/>Acta Physica Sinica. 1959 15(7): 341-352. Published 1959-07-20 THE BEHAVIOR OF INTERNAL FRICTION ASSOCIATED WITH THE PROCESS OF MARTENSITE-TYPE TRANSFORMATION WANG YEH-NING, CHU CHIANG-CHUNG 1959-07-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1959 15(7): 341-352. article doi:10.7498/aps.15.341 10.7498/aps.15.341 Acta Physica Sinica 15 7 1959-07-20 //www.getgobooth.com/en/article/doi/10.7498/aps.15.341 341-352 //www.getgobooth.com/en/article/doi/10.7498/aps.15.353 Author(s): CHEN SHIN-BI <br/><p>An equivalent circuit of transistors operating in saturation region is suggested. This circuit contains a transistor operating in active region and a diode biased in forward direction. By using this equivalent circuit, the physical meaning of storage time of transistors may be explained more intuitively. With this, the storage time in drift transistor, Which is common base connected, has been investigated. By solving the continuity equation, the steady state and the transient components of the densities of minority carriers in diode near the p-n-junction is obtained. By setting these two components equal in magnitude and opposite in sign, we get a formula, from which the storage time may be determined. The storage time in some special cases has been calculated. The results show that the storage time depends upon the life time of minorities and the surface recombination velocities both in base region and in collector region. This may be a guide for design a transistor with more short storage time.</p> <br/>Acta Physica Sinica. 1959 15(7): 353-367. Published 1959-07-20 Author(s): CHEN SHIN-BI <br/><p>An equivalent circuit of transistors operating in saturation region is suggested. This circuit contains a transistor operating in active region and a diode biased in forward direction. By using this equivalent circuit, the physical meaning of storage time of transistors may be explained more intuitively. With this, the storage time in drift transistor, Which is common base connected, has been investigated. By solving the continuity equation, the steady state and the transient components of the densities of minority carriers in diode near the p-n-junction is obtained. By setting these two components equal in magnitude and opposite in sign, we get a formula, from which the storage time may be determined. The storage time in some special cases has been calculated. The results show that the storage time depends upon the life time of minorities and the surface recombination velocities both in base region and in collector region. This may be a guide for design a transistor with more short storage time.</p> <br/>Acta Physica Sinica. 1959 15(7): 353-367. Published 1959-07-20 ON THE PROBLEMS OF STORAGE TIME OF DRIFT TRANSISTOR OPERATING IN SATURATION REGION CHEN SHIN-BI 1959-07-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1959 15(7): 353-367. article doi:10.7498/aps.15.353 10.7498/aps.15.353 Acta Physica Sinica 15 7 1959-07-20 //www.getgobooth.com/en/article/doi/10.7498/aps.15.353 353-367 //www.getgobooth.com/en/article/doi/10.7498/aps.15.368 Author(s): LIN WEI-GUAN <br/><p>Three different forms of coupling through a small hole are treated by approxi mate methods, which are justified from good physical reasoning. These are the end on coupling between a rectangular and a circular waveguides, the coupling between a TE10 mode in a rectangular waveguide and a TM120 mode in a circular cavity through a circular hole in the side wall of the circular cavity and the coupling between a TE01 mode in a rectangular waveguide and a TMmn mode in circular waveguide through a circular hole in the side wall of the latter. The purpose of this paper is to demonstrate the methods of handling problems of complicated microwave component parts. A few formulas developed in this paper are believed to be new and useful in design works.</p> <br/>Acta Physica Sinica. 1959 15(7): 368-376. Published 1959-07-20 Author(s): LIN WEI-GUAN <br/><p>Three different forms of coupling through a small hole are treated by approxi mate methods, which are justified from good physical reasoning. These are the end on coupling between a rectangular and a circular waveguides, the coupling between a TE10 mode in a rectangular waveguide and a TM120 mode in a circular cavity through a circular hole in the side wall of the circular cavity and the coupling between a TE01 mode in a rectangular waveguide and a TMmn mode in circular waveguide through a circular hole in the side wall of the latter. The purpose of this paper is to demonstrate the methods of handling problems of complicated microwave component parts. A few formulas developed in this paper are believed to be new and useful in design works.</p> <br/>Acta Physica Sinica. 1959 15(7): 368-376. Published 1959-07-20 COUPLING BETWEEN A RECTANGULAR WAVEGUIDE AND A CIRCULAR WAVEGUIDE OR A CYLINDRICAL CAVITY THROUGH A SMALL HOLE LIN WEI-GUAN 1959-07-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1959 15(7): 368-376. article doi:10.7498/aps.15.368 10.7498/aps.15.368 Acta Physica Sinica 15 7 1959-07-20 //www.getgobooth.com/en/article/doi/10.7498/aps.15.368 368-376 //www.getgobooth.com/en/article/doi/10.7498/aps.15.377 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1959 15(7): 377-388. Published 1959-07-20 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1959 15(7): 377-388. Published 1959-07-20 УНИВЕРСАЛЬНОЕ ВЗАИМОДЕЙСТВИЕ ФЕРМИ И ЗАХВАТ μ&lt;sup&lt;-&lt;/sup&lt;-МЕЗОНОВ ЯДРАМИ 1959-07-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1959 15(7): 377-388. article doi:10.7498/aps.15.377 10.7498/aps.15.377 Acta Physica Sinica 15 7 1959-07-20 //www.getgobooth.com/en/article/doi/10.7498/aps.15.377 377-388 //www.getgobooth.com/en/article/doi/10.7498/aps.15.389 Author(s): LIU MIN-CHIH <br/><p>This paper describes a new method for refining super-pnrity Ga (99.9999%). By means of this method it provides multiple zone on one side of the helix of plastic tubing in which the material to be refine1 is filled. Thus when the helix rotates, the melting zones travel endlessly throughout the specimen. The efficieney of this arrangement is thought to be higher than that of the conventional one.</p> <br/>Acta Physica Sinica. 1959 15(7): 389-392. Published 1959-07-20 Author(s): LIU MIN-CHIH <br/><p>This paper describes a new method for refining super-pnrity Ga (99.9999%). By means of this method it provides multiple zone on one side of the helix of plastic tubing in which the material to be refine1 is filled. Thus when the helix rotates, the melting zones travel endlessly throughout the specimen. The efficieney of this arrangement is thought to be higher than that of the conventional one.</p> <br/>Acta Physica Sinica. 1959 15(7): 389-392. Published 1959-07-20 A NEW METHOD OF ZONE MELTING FOR REFINING SUPER-PURITY GALLIUM LIU MIN-CHIH 1959-07-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1959 15(7): 389-392. article doi:10.7498/aps.15.389 10.7498/aps.15.389 Acta Physica Sinica 15 7 1959-07-20 //www.getgobooth.com/en/article/doi/10.7498/aps.15.389 389-392 //www.getgobooth.com/en/article/doi/10.7498/aps.15.393 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1959 15(7): 393-396. Published 1959-07-20 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1959 15(7): 393-396. Published 1959-07-20 ОБ АНАЛИЗЕ КРИВЫХ ТЕРМИЧЕСКОГО ВЫСВЕЧИВАНИЯ С УЧЕТОМ ОТНОСИТЕЛЬНОЙ ВЕРАЯТНОСТИ ПОВТОРНОЙ ЛОКАЛИЗАЦИИ ЭЛЕКТРОНОВ 1959-07-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1959 15(7): 393-396. article doi:10.7498/aps.15.393 10.7498/aps.15.393 Acta Physica Sinica 15 7 1959-07-20 //www.getgobooth.com/en/article/doi/10.7498/aps.15.393 393-396

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