//www.getgobooth.com/ 必威体育下载 daily 15 2024-08-20 10:33:39 apsoffice@iphy.ac.cn apsoffice@iphy.ac.cn 2024-08-20 10:33:39 zh Copyright ©Acta Physica Sinica All Rights Reserved. 京ICP备05002789号-1 Address: PostCode：100190 Phone: 010-82649829，82649241,82649863 Email: apsoffice@iphy.ac.cn Copyright ©Acta Physica Sinica All Rights Reserved apsoffice@iphy.ac.cn 1000-3290 //www.getgobooth.com/en/article/doi/10.7498/aps.28.285 Author(s): MING NAI-BEN, YANG YONG-SHUN <br/><p>In this paper, we studied the macro-morphology and micro-structure of crystal-molt interfaces, which was exposed by rapid separating the growing crystal from the melt. We have determined the indices of the facets revealed on the interface of Czochralski-pulled YAG single crystals with various orientations. The facets have been discovered on the concave interface as well as on convex interface of -oriented grown YAG single crystals. We have observed the micro-structure of vicinal interface, which is composed of sections of singular surface dispersed with steps. The experimental evidence for the step movement as well as the interaction of steps with inclusions on these interfaces is presented.The micro-structure of the interfaces and the correspondence between the facets and the core for concave interface growth are discussed, and it is implied that the macro-shapes of interface influence the micro-mechanism of growth. The growth mechanism for concave and convex interfaces based on these considerations is then developed.</p> <br/>Acta Physica Sinica. 1979 28(3): 285-296. Published 1979-03-20 Author(s): MING NAI-BEN, YANG YONG-SHUN <br/><p>In this paper, we studied the macro-morphology and micro-structure of crystal-molt interfaces, which was exposed by rapid separating the growing crystal from the melt. We have determined the indices of the facets revealed on the interface of Czochralski-pulled YAG single crystals with various orientations. The facets have been discovered on the concave interface as well as on convex interface of -oriented grown YAG single crystals. We have observed the micro-structure of vicinal interface, which is composed of sections of singular surface dispersed with steps. The experimental evidence for the step movement as well as the interaction of steps with inclusions on these interfaces is presented.The micro-structure of the interfaces and the correspondence between the facets and the core for concave interface growth are discussed, and it is implied that the macro-shapes of interface influence the micro-mechanism of growth. The growth mechanism for concave and convex interfaces based on these considerations is then developed.</p> <br/>Acta Physica Sinica. 1979 28(3): 285-296. Published 1979-03-20 THE GROWTH OF FACETS AND VICINAL INTERFACES ON CZOCHRALSKI-GROWN YAG SINGLE CRYSTALS MING NAI-BEN, YANG YONG-SHUN 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 285-296. article doi:10.7498/aps.28.285 10.7498/aps.28.285 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.285 285-296 //www.getgobooth.com/en/article/doi/10.7498/aps.28.297 Author(s): ZOU BEN-SAN, YE HENG-QIANG, WU YU-KUN, GUO KE-XIN <br/><p>By following the relationship of correspondanee between twinning geometry and the rotation matrices, and the combination theorems of rotation operation, it is always possible to reduce the multiple twinning operation of the high order twin to single rotation operations. In this article, we calculated the rotation axis [uvw] and rotation angle φ 's, by which the reduction of 1-5 order twinning in the fee structure to single rotation operations can be accomplished. In addition, we also give the computing procedure which is appropriate for the automatic analysis of electron diffraction pattern of high order twins by means of a computer.</p> <br/>Acta Physica Sinica. 1979 28(3): 297-304. Published 1979-03-20 Author(s): ZOU BEN-SAN, YE HENG-QIANG, WU YU-KUN, GUO KE-XIN <br/><p>By following the relationship of correspondanee between twinning geometry and the rotation matrices, and the combination theorems of rotation operation, it is always possible to reduce the multiple twinning operation of the high order twin to single rotation operations. In this article, we calculated the rotation axis [uvw] and rotation angle φ 's, by which the reduction of 1-5 order twinning in the fee structure to single rotation operations can be accomplished. In addition, we also give the computing procedure which is appropriate for the automatic analysis of electron diffraction pattern of high order twins by means of a computer.</p> <br/>Acta Physica Sinica. 1979 28(3): 297-304. Published 1979-03-20 ON REDUCTION OF THE HIGH ORDER TWINNING IN FCC STRUCTURE TO A SINGLE ROTATION RELATIONSHIP ZOU BEN-SAN, YE HENG-QIANG, WU YU-KUN, GUO KE-XIN 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 297-304. article doi:10.7498/aps.28.297 10.7498/aps.28.297 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.297 297-304 //www.getgobooth.com/en/article/doi/10.7498/aps.28.305 Author(s): ZHAO SHI-FU, GU BEN-YUAN, ZHANG AN-DONG, XU ZHENG-YI <br/><p>On the basis of our earlier work, the relaxation behaviors of the light diffraction intensity induced by the distribution of space charge in a-LiIO3 single crystals under the action of an electrostatic field have been investigated by using a space filter. The empirical expressions of the relaxation process were obtained. It was found that the parameters involved change with the temperature and from specimen to specimen, as well as depend both on the magnitude and the relative direction of the polarity of the crystal and the electrostatic field applied. When the temperature is lowered below a certain value (≈-25℃), the enhancement diffraction intensity due to the applied field becomes not quite evident. When the electrostatic field is applied at a temperature higher than the "freezing" point and then the specimen is cooled to a temperature below the latter, the magnitude of diffraction intensity enhanced by the applied voltage at higher temperatures remains unchanged, it is so even after removing the voltage. This "freezing" effect is parallel to that observed in the enhancement of neutron diffraction intensity.</p> <br/>Acta Physica Sinica. 1979 28(3): 305-313. Published 1979-03-20 Author(s): ZHAO SHI-FU, GU BEN-YUAN, ZHANG AN-DONG, XU ZHENG-YI <br/><p>On the basis of our earlier work, the relaxation behaviors of the light diffraction intensity induced by the distribution of space charge in a-LiIO3 single crystals under the action of an electrostatic field have been investigated by using a space filter. The empirical expressions of the relaxation process were obtained. It was found that the parameters involved change with the temperature and from specimen to specimen, as well as depend both on the magnitude and the relative direction of the polarity of the crystal and the electrostatic field applied. When the temperature is lowered below a certain value (≈-25℃), the enhancement diffraction intensity due to the applied field becomes not quite evident. When the electrostatic field is applied at a temperature higher than the "freezing" point and then the specimen is cooled to a temperature below the latter, the magnitude of diffraction intensity enhanced by the applied voltage at higher temperatures remains unchanged, it is so even after removing the voltage. This "freezing" effect is parallel to that observed in the enhancement of neutron diffraction intensity.</p> <br/>Acta Physica Sinica. 1979 28(3): 305-313. Published 1979-03-20 RELAXATION BEHAVIORS OF THE LIGHT DIFFRACTION INTENSITY AND RELATED "FREEZING" EFFECT AT LOW TEMPERATURES OBSERVED IN α-LiIO&lt;sub&lt;3&lt;/sub&lt; SINGLE CRYSTALS UNDER THE ACTION OF AN ELECTROSTATIC FIELD ZHAO SHI-FU, GU BEN-YUAN, ZHANG AN-DONG, XU ZHENG-YI 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 305-313. article doi:10.7498/aps.28.305 10.7498/aps.28.305 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.305 305-313 //www.getgobooth.com/en/article/doi/10.7498/aps.28.314 Author(s): LI CHUN-ZHI <br/><p>In this paper, general expressions for coordinate transformation in crystal direct space or reciprocal space are derived by using of matrix calculus. A matrix method for indexing complex electron diffraction patterns of two phase structures, twins and high order Laue zones is described.</p> <br/>Acta Physica Sinica. 1979 28(3): 314-323. Published 1979-03-20 Author(s): LI CHUN-ZHI <br/><p>In this paper, general expressions for coordinate transformation in crystal direct space or reciprocal space are derived by using of matrix calculus. A matrix method for indexing complex electron diffraction patterns of two phase structures, twins and high order Laue zones is described.</p> <br/>Acta Physica Sinica. 1979 28(3): 314-323. Published 1979-03-20 A USEFUL METHOD FOR INDEXING ELECTRON DIFFRACTION PATTERNS LI CHUN-ZHI 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 314-323. article doi:10.7498/aps.28.314 10.7498/aps.28.314 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.314 314-323 //www.getgobooth.com/en/article/doi/10.7498/aps.28.324 Author(s): CHEN CHANG, WEI CHENG-LIAN, DONG YU-LAIN, LIU SHI-JIE, XIA GUANG-CHANG, FAN JING-YUN, WANG QI-LIANG, GAO ZHI-WEI <br/><p>By making use of the back scattering method Si, GaAs and LiNbO3 Single Crystal blocking patterns were obtained and GaAs single crystal {110}, {100} and {112} plane blocking halfangle ψ1/2 values were estimated. We have found that the depth of the {110} plane blocking dip of Si slice damaged due to ion implanting becomes shallow when implantation dose increases. In order to check the experimental apparatus and the method, we have also obtained Si single crystal blocking pattern and measured the values of Si single crystal {110}, {111} and {100} crystal plane blocking halfangles</p> <br/>Acta Physica Sinica. 1979 28(3): 324-333. Published 1979-03-20 Author(s): CHEN CHANG, WEI CHENG-LIAN, DONG YU-LAIN, LIU SHI-JIE, XIA GUANG-CHANG, FAN JING-YUN, WANG QI-LIANG, GAO ZHI-WEI <br/><p>By making use of the back scattering method Si, GaAs and LiNbO3 Single Crystal blocking patterns were obtained and GaAs single crystal {110}, {100} and {112} plane blocking halfangle ψ1/2 values were estimated. We have found that the depth of the {110} plane blocking dip of Si slice damaged due to ion implanting becomes shallow when implantation dose increases. In order to check the experimental apparatus and the method, we have also obtained Si single crystal blocking pattern and measured the values of Si single crystal {110}, {111} and {100} crystal plane blocking halfangles</p> <br/>Acta Physica Sinica. 1979 28(3): 324-333. Published 1979-03-20 THE BLOCKING EFFECT OF Si, GaAs AND LiNbO&lt;sub&lt;3&lt;/sub&lt; SINGLE CRYSTALS CHEN CHANG, WEI CHENG-LIAN, DONG YU-LAIN, LIU SHI-JIE, XIA GUANG-CHANG, FAN JING-YUN, WANG QI-LIANG, GAO ZHI-WEI 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 324-333. article doi:10.7498/aps.28.324 10.7498/aps.28.324 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.324 324-333 //www.getgobooth.com/en/article/doi/10.7498/aps.28.334 Author(s): LIU GUANG-ZHAO <br/><p>The experimantal phenomena for the formation of graphite, -the metastable phase of carbon -from molten metal solutions under ultrahigh pressures and high temperatures are given. Taking this as an example, we have analyzed the thermodynamic possibility of the crystallization of the metastable phases from the solution. The concept of supersaturation that promotes the metastable phases to crystallize from solutions has been presented. It has been pointed out that the temperature difference in a solution system must be the driving force for crystallization of the metastable phase from, the solution. The emphasis is placed on the calculations of the critical temperature difference of the possible crystallization for the metastable graphite under a given crystallizing condition.</p> <br/>Acta Physica Sinica. 1979 28(3): 334-340. Published 1979-03-20 Author(s): LIU GUANG-ZHAO <br/><p>The experimantal phenomena for the formation of graphite, -the metastable phase of carbon -from molten metal solutions under ultrahigh pressures and high temperatures are given. Taking this as an example, we have analyzed the thermodynamic possibility of the crystallization of the metastable phases from the solution. The concept of supersaturation that promotes the metastable phases to crystallize from solutions has been presented. It has been pointed out that the temperature difference in a solution system must be the driving force for crystallization of the metastable phase from, the solution. The emphasis is placed on the calculations of the critical temperature difference of the possible crystallization for the metastable graphite under a given crystallizing condition.</p> <br/>Acta Physica Sinica. 1979 28(3): 334-340. Published 1979-03-20 THE POSSIBILITY OF THE CRYSTALLIZATION OF METASTABLE GRAPHITE FROM MOLTEN METAL SOLUTIONS UNDER THE STABLE CONDITIONS OF DIAMOND LIU GUANG-ZHAO 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 334-340. article doi:10.7498/aps.28.334 10.7498/aps.28.334 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.334 334-340 //www.getgobooth.com/en/article/doi/10.7498/aps.28.341 Author(s): WANG WEI-YUAN <br/><p>This paper presents some preliminary results on the measurement of carrier lifetime of GaAs diodes by the step recovery method. The lifetime of Si recovery diodes with Boron diffused p-n junction has been measured by the reverse recovery and step recovery methods.The results obtained are fairly consistent, indicating that it meets the requirement of the step recovery method sufficiently well. Therefore, it is suggested that the diode lifetime so obtained is equal to the minority carrier lifetime. In this way, the minority carrier lifetime of GaAs diodes with p-n junction has been determined. The lifetime of GaAs diodes with M-S schottry barrier has also been measured. In this case, however, it is suggested from a preliminary analysis that the measured value is not the minority carrier lifetime.</p> <br/>Acta Physica Sinica. 1979 28(3): 341-349. Published 1979-03-20 Author(s): WANG WEI-YUAN <br/><p>This paper presents some preliminary results on the measurement of carrier lifetime of GaAs diodes by the step recovery method. The lifetime of Si recovery diodes with Boron diffused p-n junction has been measured by the reverse recovery and step recovery methods.The results obtained are fairly consistent, indicating that it meets the requirement of the step recovery method sufficiently well. Therefore, it is suggested that the diode lifetime so obtained is equal to the minority carrier lifetime. In this way, the minority carrier lifetime of GaAs diodes with p-n junction has been determined. The lifetime of GaAs diodes with M-S schottry barrier has also been measured. In this case, however, it is suggested from a preliminary analysis that the measured value is not the minority carrier lifetime.</p> <br/>Acta Physica Sinica. 1979 28(3): 341-349. Published 1979-03-20 MEASUREMENT OF CARRIER LIFETIME OF GaAs DIODES WITH p-n AND M-S JUNCTIONS BY STEP RECOVERY METHOD WANG WEI-YUAN 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 341-349. article doi:10.7498/aps.28.341 10.7498/aps.28.341 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.341 341-349 //www.getgobooth.com/en/article/doi/10.7498/aps.28.350 Author(s): ZHOU BING-LIN, WANG LE, SHAO YONG-FU, CHEN QI-YU <br/><p>Measurements on transient capacitance and thermally stimulated capacitance of N-type GaAs epitaxial materials have been carried out. Electron traps could not be detected in LPE materials. However, two electron traps 0.82 and 0.43 eV below the conduction band have been discovered in VPE materials, the electron capture sections are found to be about 2.0×10-13 and 1.5×10-15cm2 respectively.</p> <br/>Acta Physica Sinica. 1979 28(3): 350-357. Published 1979-03-20 Author(s): ZHOU BING-LIN, WANG LE, SHAO YONG-FU, CHEN QI-YU <br/><p>Measurements on transient capacitance and thermally stimulated capacitance of N-type GaAs epitaxial materials have been carried out. Electron traps could not be detected in LPE materials. However, two electron traps 0.82 and 0.43 eV below the conduction band have been discovered in VPE materials, the electron capture sections are found to be about 2.0×10-13 and 1.5×10-15cm2 respectively.</p> <br/>Acta Physica Sinica. 1979 28(3): 350-357. Published 1979-03-20 MEASUREMENT OF DEEP LEVEL TRAPS IN GaAs ZHOU BING-LIN, WANG LE, SHAO YONG-FU, CHEN QI-YU 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 350-357. article doi:10.7498/aps.28.350 10.7498/aps.28.350 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.350 350-357 //www.getgobooth.com/en/article/doi/10.7498/aps.28.358 Author(s): ZHAN DA-SAN <br/><p>In this article, we discuss the properties of the generalized linear coherent optical-processing system proposed in [1] and [2], and show that the equivalent system exists. We further show that the parameter Z1 is of little importance.</p> <br/>Acta Physica Sinica. 1979 28(3): 358-363. Published 1979-03-20 Author(s): ZHAN DA-SAN <br/><p>In this article, we discuss the properties of the generalized linear coherent optical-processing system proposed in [1] and [2], and show that the equivalent system exists. We further show that the parameter Z1 is of little importance.</p> <br/>Acta Physica Sinica. 1979 28(3): 358-363. Published 1979-03-20 A DISCUSSION ON THE GENERALIZED LINEAR COHERENT OPTICAL-PROCESSING SYSTEM ZHAN DA-SAN 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 358-363. article doi:10.7498/aps.28.358 10.7498/aps.28.358 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.358 358-363 //www.getgobooth.com/en/article/doi/10.7498/aps.28.364 Author(s): TAN WEI-HAN <br/><p>On the basis of analysing the results of a computer simulation of one-dimensional double-temperature laser implosive compression of a DT target, the author has found the analytic solutions on the shock waves and thermal waves which are in good agreement with the computer results.</p> <br/>Acta Physica Sinica. 1979 28(3): 364-376. Published 1979-03-20 Author(s): TAN WEI-HAN <br/><p>On the basis of analysing the results of a computer simulation of one-dimensional double-temperature laser implosive compression of a DT target, the author has found the analytic solutions on the shock waves and thermal waves which are in good agreement with the computer results.</p> <br/>Acta Physica Sinica. 1979 28(3): 364-376. Published 1979-03-20 COMPUTER SIMULATION OF LASER IMPLOSIVE COMPRESSION OF A D T TARGET AND ANALYTIC SOLUTIONS ON THE SHOCK WAVES AND THERMAL WAVES TAN WEI-HAN 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 364-376. article doi:10.7498/aps.28.364 10.7498/aps.28.364 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.364 364-376 //www.getgobooth.com/en/article/doi/10.7498/aps.28.377 Author(s): DENG HE <br/><p>In this paper, influence of the terminal level lifetime on Nd-glass laser amplifiers has been investigated by using a computer. Results show that, for a Nd-glass laser amplifier with dimension of φ20×480 mm, when the Nd-glass terminal level lifetime is decreased from 100 ns to 1 ns, the influences on an input pulse with a 20 ns width and 2.0 J/cm2 energy density are as follows: the gain increases by～20%; the distortion of the pulse peak decreases by～20%; and the amplifier's saturation length decreases by～30%.</p> <br/>Acta Physica Sinica. 1979 28(3): 377-382. Published 1979-03-20 Author(s): DENG HE <br/><p>In this paper, influence of the terminal level lifetime on Nd-glass laser amplifiers has been investigated by using a computer. Results show that, for a Nd-glass laser amplifier with dimension of φ20×480 mm, when the Nd-glass terminal level lifetime is decreased from 100 ns to 1 ns, the influences on an input pulse with a 20 ns width and 2.0 J/cm2 energy density are as follows: the gain increases by～20%; the distortion of the pulse peak decreases by～20%; and the amplifier's saturation length decreases by～30%.</p> <br/>Acta Physica Sinica. 1979 28(3): 377-382. Published 1979-03-20 INFLUENCE OF THE TERMINAL LEVEL LIFETIME ON Nd-GLASS LASER AMPLIFIERS DENG HE 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 377-382. article doi:10.7498/aps.28.377 10.7498/aps.28.377 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.377 377-382 //www.getgobooth.com/en/article/doi/10.7498/aps.28.383 Author(s): DENG CONG-HAO <br/><p>In this paper, we carry out the theoretical calculation of line widths and energy shifts of spontaneous emission, the decaying oscillating field is taken instead of the free field as the action field. In the calculation the self consistent requirement is imposed.The method of calculation is rigorous but different from the previous workers. No divergence difficulties are encountered in the calculation.We think this method of avoiding divergence difficulties may be useful in the theoretical calculation of inelastic scattering cross sections in elementary particle physics.</p> <br/>Acta Physica Sinica. 1979 28(3): 383-392. Published 1979-03-20 Author(s): DENG CONG-HAO <br/><p>In this paper, we carry out the theoretical calculation of line widths and energy shifts of spontaneous emission, the decaying oscillating field is taken instead of the free field as the action field. In the calculation the self consistent requirement is imposed.The method of calculation is rigorous but different from the previous workers. No divergence difficulties are encountered in the calculation.We think this method of avoiding divergence difficulties may be useful in the theoretical calculation of inelastic scattering cross sections in elementary particle physics.</p> <br/>Acta Physica Sinica. 1979 28(3): 383-392. Published 1979-03-20 LINE WIDTHS AND ENERGY SHIFTS OF SPONTANEOUS EMISSION DENG CONG-HAO 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 383-392. article doi:10.7498/aps.28.383 10.7498/aps.28.383 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.383 383-392 //www.getgobooth.com/en/article/doi/10.7498/aps.28.393 Author(s): CAI JUN-DAO, JI GUANG-DA, WU HANG-SHENG, CAI JIAN-HUA, GONG CHANG-DE <br/><p>We have determined the first several coefficients of the series formula (1) for superconducting Tc. For the double-σ spectrum as α2F(ω)=λω/2[a1δ(ω-ω1)+(1-a1)δ(ω-ω2)] and that of several real materials, we have compared the Tc calculated from the series formula, the Allen-Dynes formula and the numerical solution of the Eliashberg Equation, respectively. The results suggest that when the series is convergent, the calculated results by using the series formula is a better approximation of the numerrieal solution than that from the A-D formula.We have also given an approximate Tc series formula, obtained a method to estimate the convergent radius of the Tc series and calculated the convergent radius for several materials. Therefore we may estimate the region in which the series formula (1) is valid.</p> <br/>Acta Physica Sinica. 1979 28(3): 393-405. Published 1979-03-20 Author(s): CAI JUN-DAO, JI GUANG-DA, WU HANG-SHENG, CAI JIAN-HUA, GONG CHANG-DE <br/><p>We have determined the first several coefficients of the series formula (1) for superconducting Tc. For the double-σ spectrum as α2F(ω)=λω/2[a1δ(ω-ω1)+(1-a1)δ(ω-ω2)] and that of several real materials, we have compared the Tc calculated from the series formula, the Allen-Dynes formula and the numerical solution of the Eliashberg Equation, respectively. The results suggest that when the series is convergent, the calculated results by using the series formula is a better approximation of the numerrieal solution than that from the A-D formula.We have also given an approximate Tc series formula, obtained a method to estimate the convergent radius of the Tc series and calculated the convergent radius for several materials. Therefore we may estimate the region in which the series formula (1) is valid.</p> <br/>Acta Physica Sinica. 1979 28(3): 393-405. Published 1979-03-20 THEORY OF THE SUPERCONDUCTING CRITICAL TEMPERATURE (Ⅲ) CAI JUN-DAO, JI GUANG-DA, WU HANG-SHENG, CAI JIAN-HUA, GONG CHANG-DE 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 393-405. article doi:10.7498/aps.28.393 10.7498/aps.28.393 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.393 393-405 //www.getgobooth.com/en/article/doi/10.7498/aps.28.406 Author(s): METAL INTERFACE RESEARCH GROUP, PEKING UNIVERSITY DIVISION No.7 <br/><p>The effect of alloy element Zr on the Nb3Sn growth kinetics at the Cu-Sn/Nb interface has been investigated. Experiments have revealed that the addition of Zr in single core composites increases the growth rate substantially and the variation of the Nb3Sn layer thickness with reaction time obviously exceeds the parabolic law. These results cannot be interpreted fully taking into account the fineness of Nb3Sn grains caused by the ZrO2 particles formed during heat treatment, and it is necessary to consider the increase of diffusion coefficient caused by supersaturation of vaeances around the ZrO2 particles. The depletion of Sn contents in the Cu-Sn matrix of multifilamentary composites during heat treatment greatly influenced the growth rate. The revised formula of growth kinetics gives a satisfactory explanation on the experimental results.</p> <br/>Acta Physica Sinica. 1979 28(3): 406-415. Published 1979-03-20 Author(s): METAL INTERFACE RESEARCH GROUP, PEKING UNIVERSITY DIVISION No.7 <br/><p>The effect of alloy element Zr on the Nb3Sn growth kinetics at the Cu-Sn/Nb interface has been investigated. Experiments have revealed that the addition of Zr in single core composites increases the growth rate substantially and the variation of the Nb3Sn layer thickness with reaction time obviously exceeds the parabolic law. These results cannot be interpreted fully taking into account the fineness of Nb3Sn grains caused by the ZrO2 particles formed during heat treatment, and it is necessary to consider the increase of diffusion coefficient caused by supersaturation of vaeances around the ZrO2 particles. The depletion of Sn contents in the Cu-Sn matrix of multifilamentary composites during heat treatment greatly influenced the growth rate. The revised formula of growth kinetics gives a satisfactory explanation on the experimental results.</p> <br/>Acta Physica Sinica. 1979 28(3): 406-415. Published 1979-03-20 THE EFFECT OF ALLOY ELEMENTS ON THE Nb&lt;sub&lt;3&lt;/sub&lt;Sn GROWTH KINETICS METAL INTERFACE RESEARCH GROUP, PEKING UNIVERSITY DIVISION No.7 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 406-415. article doi:10.7498/aps.28.406 10.7498/aps.28.406 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.406 406-415 //www.getgobooth.com/en/article/doi/10.7498/aps.28.416 Author(s): YAO XI-XIAN <br/><p>In the presence of a battery source and a radiation field, a superconducting weaklink can be represented by a simplified model consisting of a resistance shunted Josephson junction driven by a constant current source. Using such a model, we give a general criterion for the occuring of constant voltage current steps in the current-voltage characteristics of the weaklink. Following this criterion, we have also discussed the absence of sub-harmonic current steps. For the case while the radiation field is very weak, the current step heights are calculated by pertubation method. The current step heights are also obtained by numerical compution for the case of strong field.</p> <br/>Acta Physica Sinica. 1979 28(3): 416-425. Published 1979-03-20 Author(s): YAO XI-XIAN <br/><p>In the presence of a battery source and a radiation field, a superconducting weaklink can be represented by a simplified model consisting of a resistance shunted Josephson junction driven by a constant current source. Using such a model, we give a general criterion for the occuring of constant voltage current steps in the current-voltage characteristics of the weaklink. Following this criterion, we have also discussed the absence of sub-harmonic current steps. For the case while the radiation field is very weak, the current step heights are calculated by pertubation method. The current step heights are also obtained by numerical compution for the case of strong field.</p> <br/>Acta Physica Sinica. 1979 28(3): 416-425. Published 1979-03-20 THE CURRENT STEPS IN SUPERCONDUCTING WEAKLINKS YAO XI-XIAN 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 416-425. article doi:10.7498/aps.28.416 10.7498/aps.28.416 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.416 416-425 //www.getgobooth.com/en/article/doi/10.7498/aps.28.426 Author(s): WU ZHONG-XIANG <br/><p></p> <br/>Acta Physica Sinica. 1979 28(3): 426-429. Published 1979-03-20 Author(s): WU ZHONG-XIANG <br/><p></p> <br/>Acta Physica Sinica. 1979 28(3): 426-429. Published 1979-03-20 A FORMULA FOR ESTIMATING THE POWER OUTPUT OF A LASER WU ZHONG-XIANG 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 426-429. article doi:10.7498/aps.28.426 10.7498/aps.28.426 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.426 426-429 //www.getgobooth.com/en/article/doi/10.7498/aps.28.430 Author(s): FANG HONG-LIE <br/><p></p> <br/>Acta Physica Sinica. 1979 28(3): 430-434. Published 1979-03-20 Author(s): FANG HONG-LIE <br/><p></p> <br/>Acta Physica Sinica. 1979 28(3): 430-434. Published 1979-03-20 A CANONICAL FORMULATION FOR ANALYZING MULTIELEMENT RESONATORS FANG HONG-LIE 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 430-434. article doi:10.7498/aps.28.430 10.7498/aps.28.430 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.430 430-434 //www.getgobooth.com/en/article/doi/10.7498/aps.28.435 Author(s): WANG WEN-KUI <br/><p></p> <br/>Acta Physica Sinica. 1979 28(3): 435-442. Published 1979-03-20 Author(s): WANG WEN-KUI <br/><p></p> <br/>Acta Physica Sinica. 1979 28(3): 435-442. Published 1979-03-20 A CRITERION ON THE STABILITY OF A15 PHASES WANG WEN-KUI 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 435-442. article doi:10.7498/aps.28.435 10.7498/aps.28.435 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.435 435-442 //www.getgobooth.com/en/article/doi/10.7498/aps.28.443 Author(s): WANG DING-SHENG, PU FU-CHO <br/><p></p> <br/>Acta Physica Sinica. 1979 28(3): 443-446. Published 1979-03-20 Author(s): WANG DING-SHENG, PU FU-CHO <br/><p></p> <br/>Acta Physica Sinica. 1979 28(3): 443-446. Published 1979-03-20 THE INFLUENCE OF THE SPATIAL ARRANGEMENT OF THE NEIGHBORING ATOMS ON THE SPIN WAVE SPECTRA OF THE AMORPHOUS FERROMAGNETS WANG DING-SHENG, PU FU-CHO 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 443-446. article doi:10.7498/aps.28.443 10.7498/aps.28.443 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.443 443-446 //www.getgobooth.com/en/article/doi/10.7498/aps.28.447 Author(s): PAN LIN-ZHANG, YU YONG-QIN <br/><p></p> <br/>Acta Physica Sinica. 1979 28(3): 447-449. Published 1979-03-20 Author(s): PAN LIN-ZHANG, YU YONG-QIN <br/><p></p> <br/>Acta Physica Sinica. 1979 28(3): 447-449. Published 1979-03-20 THE DETERMINATION OF THE NUCLEAR QUADRUPOLE RESONANCE SPECTRUM OF N&lt;sup&lt;14&lt;/sup&lt; IN TRIMETHYLENE TRINITROAMINE PAN LIN-ZHANG, YU YONG-QIN 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 447-449. article doi:10.7498/aps.28.447 10.7498/aps.28.447 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.447 447-449 //www.getgobooth.com/en/article/doi/10.7498/aps.28.450 Author(s): LU QUAN-KANG <br/><p></p> <br/>Acta Physica Sinica. 1979 28(3): 450-454. Published 1979-03-20 Author(s): LU QUAN-KANG <br/><p></p> <br/>Acta Physica Sinica. 1979 28(3): 450-454. Published 1979-03-20 ON A GENERALIZED OHM'S LAW IN PARTIALLY IONIZED PLASMA (Ⅱ) LU QUAN-KANG 1979-03-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1979 28(3): 450-454. article doi:10.7498/aps.28.450 10.7498/aps.28.450 Acta Physica Sinica 28 3 1979-03-20 //www.getgobooth.com/en/article/doi/10.7498/aps.28.450 450-454

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