Acta Physica Sinica
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1000-3290
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1377
Author(s): ZHANG YAN-ZHONG <br/><p>The kinetic behavior of the isothermal relaxation of the magnetic permeability has been investigated for the amorphous Fe82Si5B13 alloy in the range 0-300℃. Four relaxation peaks are observed on the isochronal relaxation spectrum for as-quenched alloy. The overale relaxation usally consists of both the ordinary disaccommodation and the continuous permeability decay, they are reversible and irreversible with respect to demagnetization, respectively. The calculations or the distributions of the relaxation time and the activation energy show that they have a broad distribution. The most probable activation energies for disaccommodation and decay are about 1.0 eV and 1.4 eV, respectively. A cross-over effect in the decay is observed for annealed sample.</p> <br/>Acta Physica Sinica. 1985 34(11): 1377-1384. Published 2005-03-31
Author(s): ZHANG YAN-ZHONG <br/><p>The kinetic behavior of the isothermal relaxation of the magnetic permeability has been investigated for the amorphous Fe82Si5B13 alloy in the range 0-300℃. Four relaxation peaks are observed on the isochronal relaxation spectrum for as-quenched alloy. The overale relaxation usally consists of both the ordinary disaccommodation and the continuous permeability decay, they are reversible and irreversible with respect to demagnetization, respectively. The calculations or the distributions of the relaxation time and the activation energy show that they have a broad distribution. The most probable activation energies for disaccommodation and decay are about 1.0 eV and 1.4 eV, respectively. A cross-over effect in the decay is observed for annealed sample.</p> <br/>Acta Physica Sinica. 1985 34(11): 1377-1384. Published 2005-03-31
MAGNETIC PERMEABILITY RELAXATION IN AMORPHOUS Fe82Si5B13 ALLOY
ZHANG YAN-ZHONG
2005-03-31
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1377-1384.
article
doi:10.7498/aps.34.1377
10.7498/aps.34.1377
Acta Physica Sinica
34
11
2005-03-31
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1377
1377-1384
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1385
Author(s): LIN HONG, ZHONG WEN-DING <br/><p>The magnetic properties of pseudobinary Sm2(FeNiCoM)17 alloys in which M are nonmagnetic elements have been studied. The sample consists of disordered hexagonal 2:17 phase (TbCu7-structure) coexisting with FeNi. Anomalous magnetic properties along the c-axis (easy magnetization direction) have been observed. Below the room temperature, the magnetization and reverse magnetization curves exhibit obvious jumps. The magnetic fields corresponding to the jumps Hr increase with the temperature decreasing. The hysteresis loops show wasp-waisted character. The curve of magnetization vs. temperature has a maximum, the corresponding transition temperature Tt decreases with the magnetic field increasing. During cooling, the thermal magnetic hysteresis phenomena have been found at some values of magnetic field. On the basal plane (hard magnetization direction) and at higher Co concentrations (<18at%), the alloys show normal ferromagnetic behaviors. Most of the phenomena observed can be explained in terms of spin reorientation phase transition leading to non-collinear spin arrangements. The reversal of spin direction must cross over an evergy barrier, the height of which is U = 9.2×10-15 erg. The calculated values of magnetization are in good agreement with the observed ones.</p> <br/>Acta Physica Sinica. 1985 34(11): 1385-1395. Published 2005-03-31
Author(s): LIN HONG, ZHONG WEN-DING <br/><p>The magnetic properties of pseudobinary Sm2(FeNiCoM)17 alloys in which M are nonmagnetic elements have been studied. The sample consists of disordered hexagonal 2:17 phase (TbCu7-structure) coexisting with FeNi. Anomalous magnetic properties along the c-axis (easy magnetization direction) have been observed. Below the room temperature, the magnetization and reverse magnetization curves exhibit obvious jumps. The magnetic fields corresponding to the jumps Hr increase with the temperature decreasing. The hysteresis loops show wasp-waisted character. The curve of magnetization vs. temperature has a maximum, the corresponding transition temperature Tt decreases with the magnetic field increasing. During cooling, the thermal magnetic hysteresis phenomena have been found at some values of magnetic field. On the basal plane (hard magnetization direction) and at higher Co concentrations (<18at%), the alloys show normal ferromagnetic behaviors. Most of the phenomena observed can be explained in terms of spin reorientation phase transition leading to non-collinear spin arrangements. The reversal of spin direction must cross over an evergy barrier, the height of which is U = 9.2×10-15 erg. The calculated values of magnetization are in good agreement with the observed ones.</p> <br/>Acta Physica Sinica. 1985 34(11): 1385-1395. Published 2005-03-31
STUDY OF MAGNETIC PROPERTIES (SPIN REORIENTATION PHASE TRANSITIONS) IN Sm2(TM)17 ALLOYS
LIN HONG, ZHONG WEN-DING
2005-03-31
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1385-1395.
article
doi:10.7498/aps.34.1385
10.7498/aps.34.1385
Acta Physica Sinica
34
11
2005-03-31
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1385
1385-1395
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1396
Author(s): HAN BAO-SHAN, NIE XIANG-FU, TANG GUI-DE, XI WEI <br/><p>The formation of hard bubbles by single-pulse bias field in epitaxial garnet films was investigated in some detail. It was verified by experiments and calculations that, in general, VBL in hard bubble walls are not generated by the way that one Bloch line pair is produced per pulse. The dependence of the hardening of soft domain segments on their movements was revealed by means of the method of double exposure photography. Two kinds of favorite movements for hard bubble formation were discovered and the physical meaning of the" demarcation field for soft and hard bubble formation" H[b] was elucidated.</p> <br/>Acta Physica Sinica. 1985 34(11): 1396-1406. Published 2005-03-31
Author(s): HAN BAO-SHAN, NIE XIANG-FU, TANG GUI-DE, XI WEI <br/><p>The formation of hard bubbles by single-pulse bias field in epitaxial garnet films was investigated in some detail. It was verified by experiments and calculations that, in general, VBL in hard bubble walls are not generated by the way that one Bloch line pair is produced per pulse. The dependence of the hardening of soft domain segments on their movements was revealed by means of the method of double exposure photography. Two kinds of favorite movements for hard bubble formation were discovered and the physical meaning of the" demarcation field for soft and hard bubble formation" H[b] was elucidated.</p> <br/>Acta Physica Sinica. 1985 34(11): 1396-1406. Published 2005-03-31
FORMATION OF HARD BUBBLES BY SINGLE-PULSE BIAS FIELD
HAN BAO-SHAN, NIE XIANG-FU, TANG GUI-DE, XI WEI
2005-03-31
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1396-1406.
article
doi:10.7498/aps.34.1396
10.7498/aps.34.1396
Acta Physica Sinica
34
11
2005-03-31
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1396
1396-1406
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1407
Author(s): ZHANG PENG-XIANG, CAO KE-DING <br/><p>We constructed a device to excite and detect magnetostatic modes in. slab ferrite samples for frequency range of 2-8GHz. Using this device, we set up a system to measure relation between frequency and applied magnetic field for magnetostatic waves. This system can be used to study not only the magnetostatic waves, but also the basic properties of ferrites. It is similar to FMR. However, the samples need not to be put into a microwave cavity, thus the system allows one to make measurements during some sample treatment.</p> <br/>Acta Physica Sinica. 1985 34(11): 1407-1412. Published 2005-03-31
Author(s): ZHANG PENG-XIANG, CAO KE-DING <br/><p>We constructed a device to excite and detect magnetostatic modes in. slab ferrite samples for frequency range of 2-8GHz. Using this device, we set up a system to measure relation between frequency and applied magnetic field for magnetostatic waves. This system can be used to study not only the magnetostatic waves, but also the basic properties of ferrites. It is similar to FMR. However, the samples need not to be put into a microwave cavity, thus the system allows one to make measurements during some sample treatment.</p> <br/>Acta Physica Sinica. 1985 34(11): 1407-1412. Published 2005-03-31
STUDY MAGNETISM BY MAGNETOSTATIC WAVES
ZHANG PENG-XIANG, CAO KE-DING
2005-03-31
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1407-1412.
article
doi:10.7498/aps.34.1407
10.7498/aps.34.1407
Acta Physica Sinica
34
11
2005-03-31
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1407
1407-1412
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1413
Author(s): FEI QING-YU, HUANG BING-ZHONG <br/><p>The principle and method of measurement and calculation of the total volume fraction of voids of RF sputtered amorphous silicon by speetroscopic ellipsometry and effective medium theory is described. It is found that the changes in the electrical and optical properties among amorphous silicon films deposited in different argon pressure may be satisfactorily explained in terms of changes in the total volume fraction of voids. This suggests that it is significant to measure and calculate the total volume fraction of voids of a-Si. The good agreement between the result of total volume fraction of voids and the measured result of total volume fraction occupied by Ar atoms shows the validity of the method.</p> <br/>Acta Physica Sinica. 1985 34(11): 1413-1421. Published 1985-11-20
Author(s): FEI QING-YU, HUANG BING-ZHONG <br/><p>The principle and method of measurement and calculation of the total volume fraction of voids of RF sputtered amorphous silicon by speetroscopic ellipsometry and effective medium theory is described. It is found that the changes in the electrical and optical properties among amorphous silicon films deposited in different argon pressure may be satisfactorily explained in terms of changes in the total volume fraction of voids. This suggests that it is significant to measure and calculate the total volume fraction of voids of a-Si. The good agreement between the result of total volume fraction of voids and the measured result of total volume fraction occupied by Ar atoms shows the validity of the method.</p> <br/>Acta Physica Sinica. 1985 34(11): 1413-1421. Published 1985-11-20
THE TOTAL VOLUME FRACTION OF VOIDS OF RF SPUTTERED AMORPHOUS SILICON
FEI QING-YU, HUANG BING-ZHONG
1985-11-20
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1413-1421.
article
doi:10.7498/aps.34.1413
10.7498/aps.34.1413
Acta Physica Sinica
34
11
1985-11-20
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1413
1413-1421
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1422
Author(s): XU HUI, ZHANG KAI-YI <br/><p>A perturbation expansion for the thermodynamic potential is performed to the third order by HTSE method. Entropy, internal energy, specific heat, and magnetic susceptibility of the one-dimensional extended Hubbard model are computed as functions of temperature, electron density, and t, U, W. Thermodynamics can be discussed in two temperature regions. The high T-region corresponds to increase in number of double occupied states. The low T-region corresponds to the distribution of electron spin. The effect of t on thermodynamic properties is obvious.</p> <br/>Acta Physica Sinica. 1985 34(11): 1422-1432. Published 2005-03-31
Author(s): XU HUI, ZHANG KAI-YI <br/><p>A perturbation expansion for the thermodynamic potential is performed to the third order by HTSE method. Entropy, internal energy, specific heat, and magnetic susceptibility of the one-dimensional extended Hubbard model are computed as functions of temperature, electron density, and t, U, W. Thermodynamics can be discussed in two temperature regions. The high T-region corresponds to increase in number of double occupied states. The low T-region corresponds to the distribution of electron spin. The effect of t on thermodynamic properties is obvious.</p> <br/>Acta Physica Sinica. 1985 34(11): 1422-1432. Published 2005-03-31
THERMODYNAMIC PROPERTIES OF THE ONE-DIMENSIONAL EXTENDED HUBBARD MODEL(Ⅰ)——U<0
XU HUI, ZHANG KAI-YI
2005-03-31
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1422-1432.
article
doi:10.7498/aps.34.1422
10.7498/aps.34.1422
Acta Physica Sinica
34
11
2005-03-31
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1422
1422-1432
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1433
Author(s): XU HUI, ZHANG KAI-YI <br/><p>Entropy, internal energy, specific heat, and magnetic susceptibility of the one-dimensional negative-U extended Hubbard model are computed. An analytical solution of magnetic susceptibility in the strong-coupling (|U|→∞) limit is obtained. Therma-dynamic properties of the system can be discussed in two temperature regions. The high T-region corresponds to decrease in number of double occupied states. The low T-region corresponds to the distribution of electron charge. The effect of W on the-rmodynamic properties is obvious.</p> <br/>Acta Physica Sinica. 1985 34(11): 1433-1441. Published 2005-03-31
Author(s): XU HUI, ZHANG KAI-YI <br/><p>Entropy, internal energy, specific heat, and magnetic susceptibility of the one-dimensional negative-U extended Hubbard model are computed. An analytical solution of magnetic susceptibility in the strong-coupling (|U|→∞) limit is obtained. Therma-dynamic properties of the system can be discussed in two temperature regions. The high T-region corresponds to decrease in number of double occupied states. The low T-region corresponds to the distribution of electron charge. The effect of W on the-rmodynamic properties is obvious.</p> <br/>Acta Physica Sinica. 1985 34(11): 1433-1441. Published 2005-03-31
THERMODYNAMIC PROPERTIES OF THE ONE-DIMENSIONAL EXTENDED HUBBARD MODEL (Ⅱ)——U<0
XU HUI, ZHANG KAI-YI
2005-03-31
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1433-1441.
article
doi:10.7498/aps.34.1433
10.7498/aps.34.1433
Acta Physica Sinica
34
11
2005-03-31
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1433
1433-1441
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1442
Author(s): CHEN CHANG-FENG, ZHANG LI-YUAN <br/><p>In this paper we suggest a model in which f electrons are bound in a narrow band near Fermi level, s-p-d electrons are regarded as free, and hybridization between them is considered. Numerical results show that certain stability of f electrons exists under delocalization and is dramatically influenced by temperature and hybridization. Phase diagrams in different parameter spaces are plotted. Finally the case of intermediate valence in RE is discussed qualitatively.</p> <br/>Acta Physica Sinica. 1985 34(11): 1442-1450. Published 2005-03-31
Author(s): CHEN CHANG-FENG, ZHANG LI-YUAN <br/><p>In this paper we suggest a model in which f electrons are bound in a narrow band near Fermi level, s-p-d electrons are regarded as free, and hybridization between them is considered. Numerical results show that certain stability of f electrons exists under delocalization and is dramatically influenced by temperature and hybridization. Phase diagrams in different parameter spaces are plotted. Finally the case of intermediate valence in RE is discussed qualitatively.</p> <br/>Acta Physica Sinica. 1985 34(11): 1442-1450. Published 2005-03-31
A MODEL FOR LOCAL MAGNETIC MOMENT AND ITS DELOCALIZATION OF f ELECTRONS IN METALS (Ⅰ)
CHEN CHANG-FENG, ZHANG LI-YUAN
2005-03-31
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1442-1450.
article
doi:10.7498/aps.34.1442
10.7498/aps.34.1442
Acta Physica Sinica
34
11
2005-03-31
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1442
1442-1450
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1451
Author(s): GUO CHANG-LIN, YAO GONG-DA <br/><p>In this paper, a new general method of X-ray quantitative phase analysis without standards is presented. The limit conditions that the phase composition of each of the reference samples and the analysis sample must be equal in Zevin's method are no more to be required. When the analysis sample contains n0 phases, each of the reference samples could contain less or more phases than n0. Hence, our new method is more general. The quantitative methods in both cases of known and unknown mass absorption coefficients are discussed. Practical quantitative analysis have proved that, the new method is quite explicit and applicable as well as gives quite precise and satisfactory quantitative analysis results.</p> <br/>Acta Physica Sinica. 1985 34(11): 1451-1460. Published 2005-03-31
Author(s): GUO CHANG-LIN, YAO GONG-DA <br/><p>In this paper, a new general method of X-ray quantitative phase analysis without standards is presented. The limit conditions that the phase composition of each of the reference samples and the analysis sample must be equal in Zevin's method are no more to be required. When the analysis sample contains n0 phases, each of the reference samples could contain less or more phases than n0. Hence, our new method is more general. The quantitative methods in both cases of known and unknown mass absorption coefficients are discussed. Practical quantitative analysis have proved that, the new method is quite explicit and applicable as well as gives quite precise and satisfactory quantitative analysis results.</p> <br/>Acta Physica Sinica. 1985 34(11): 1451-1460. Published 2005-03-31
NEW GENERAL METHOD OF X-RAY DIFFRACTION QUANTITATIVE PHASE ANALYSIS WITHOUT STANDARDS
GUO CHANG-LIN, YAO GONG-DA
2005-03-31
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1451-1460.
article
doi:10.7498/aps.34.1451
10.7498/aps.34.1451
Acta Physica Sinica
34
11
2005-03-31
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1451
1451-1460
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1461
Author(s): YAO GONG-DA, GUO CHANG-LIN <br/><p>The pure doping samples of single phase are necessary to the common doping me-thods in quantitative X-ray diffraction phase analysis. In this paper, the new multiphase doping method in X-ray quantitative analysis is presented. If the analysis sample contains n phases, (n-1) suitable multiphase reference doping samples are required to determine the amounts of each phase in the analysis sample, but each doping sample would not contain more than (n-1) phases. This method can also be applied to determine only the amounts of several of the phases in the analysis sample. Practical quan-titative analysis have proved that, the new method is quite applicable and gives quite precise and satisfactory quantitative analysis results.</p> <br/>Acta Physica Sinica. 1985 34(11): 1461-1468. Published 2005-03-31
Author(s): YAO GONG-DA, GUO CHANG-LIN <br/><p>The pure doping samples of single phase are necessary to the common doping me-thods in quantitative X-ray diffraction phase analysis. In this paper, the new multiphase doping method in X-ray quantitative analysis is presented. If the analysis sample contains n phases, (n-1) suitable multiphase reference doping samples are required to determine the amounts of each phase in the analysis sample, but each doping sample would not contain more than (n-1) phases. This method can also be applied to determine only the amounts of several of the phases in the analysis sample. Practical quan-titative analysis have proved that, the new method is quite applicable and gives quite precise and satisfactory quantitative analysis results.</p> <br/>Acta Physica Sinica. 1985 34(11): 1461-1468. Published 2005-03-31
MULTIPHASE DOPING METHOD IN QUANTITATIVE X-RAY DIFFRACTION PHASE ANALYSIS
YAO GONG-DA, GUO CHANG-LIN
2005-03-31
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1461-1468.
article
doi:10.7498/aps.34.1461
10.7498/aps.34.1461
Acta Physica Sinica
34
11
2005-03-31
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1461
1461-1468
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1469
Author(s): ZHAO ZHONG-XIN, LI JIA-MING <br/><p>We have established the non-relativistic and relativistic atomic configuration interaction methods to calculate excitation energies of low excited states as well as radiative transition probabilities for allowed and forbidden transitions. In order to check our computer codes, we have calculated the excitation energies for N=2 states and the corresponding radiative transition rates for the atomic helium. The results of our non-relativistic and relativistic calculations agree with each other. The excitation energies are accurate within a few thousandths, the corresponding radiative transition probabilities within a few percents. Our methods can be readily applied to other atoms as well as ionized atoms.</p> <br/>Acta Physica Sinica. 1985 34(11): 1469-1478. Published 2005-03-31
Author(s): ZHAO ZHONG-XIN, LI JIA-MING <br/><p>We have established the non-relativistic and relativistic atomic configuration interaction methods to calculate excitation energies of low excited states as well as radiative transition probabilities for allowed and forbidden transitions. In order to check our computer codes, we have calculated the excitation energies for N=2 states and the corresponding radiative transition rates for the atomic helium. The results of our non-relativistic and relativistic calculations agree with each other. The excitation energies are accurate within a few thousandths, the corresponding radiative transition probabilities within a few percents. Our methods can be readily applied to other atoms as well as ionized atoms.</p> <br/>Acta Physica Sinica. 1985 34(11): 1469-1478. Published 2005-03-31
NON- RELATIVISTIC AND RELATIVISTIC ATOMIC CONFIGURATION INTERACTION THEORY EXCITATION ENERGY AND RADIATIVE TRANSITION PROBABILITY
ZHAO ZHONG-XIN, LI JIA-MING
2005-03-31
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1469-1478.
article
doi:10.7498/aps.34.1469
10.7498/aps.34.1469
Acta Physica Sinica
34
11
2005-03-31
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1469
1469-1478
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1479
Author(s): LIANG XIAO-LING, LI JIA-MING <br/><p>Based on Hartree-Slater self-consistent potentials, we have studied minima of oscillator strength densities, namely, zeroes of electric dipole matrix elements for excited alkli atoms (here oscillator strength densities proportional to photoabsorption cross sections). Thus we have induced further the systematics about the zeroes of dipole matrix elements between eigenchannels for other excited atoms, namely, the relation between the zeroes and the quantum defect differences for corresponding initial and final channels. Based on such a relation, we predict the photoabsorption windows for excited Ne(3s) and excited Ar(4s), which have been confirmed by a recent experiment.</p> <br/>Acta Physica Sinica. 1985 34(11): 1479-1487. Published 2005-03-31
Author(s): LIANG XIAO-LING, LI JIA-MING <br/><p>Based on Hartree-Slater self-consistent potentials, we have studied minima of oscillator strength densities, namely, zeroes of electric dipole matrix elements for excited alkli atoms (here oscillator strength densities proportional to photoabsorption cross sections). Thus we have induced further the systematics about the zeroes of dipole matrix elements between eigenchannels for other excited atoms, namely, the relation between the zeroes and the quantum defect differences for corresponding initial and final channels. Based on such a relation, we predict the photoabsorption windows for excited Ne(3s) and excited Ar(4s), which have been confirmed by a recent experiment.</p> <br/>Acta Physica Sinica. 1985 34(11): 1479-1487. Published 2005-03-31
MINIMA OF OSCILLATOR STRENGTH DENSITIES FOR EXCITED ATOMS
LIANG XIAO-LING, LI JIA-MING
2005-03-31
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1479-1487.
article
doi:10.7498/aps.34.1479
10.7498/aps.34.1479
Acta Physica Sinica
34
11
2005-03-31
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1479
1479-1487
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1488
Author(s): LI XlN-ZHOU, WANG KE-LIN, ZHANG JIAN-ZU <br/><p>In an SU(2) spontaneously broken gauge theory with a Higgs triplet, the mass effect of an isospin-1/2 fermion on the fermion-monopole bound states is discussed. It is shown that when the direct coupling between fermion and Higgs field approaches zero, but the Dirac mass is kept finite, then the necessary condition of the fermion-monopole bound state is not satisfied. This result means that the Rubakov effect is absent for SU(2) monopole because of the Dirac mass.</p> <br/>Acta Physica Sinica. 1985 34(11): 1488-1493. Published 2005-03-31
Author(s): LI XlN-ZHOU, WANG KE-LIN, ZHANG JIAN-ZU <br/><p>In an SU(2) spontaneously broken gauge theory with a Higgs triplet, the mass effect of an isospin-1/2 fermion on the fermion-monopole bound states is discussed. It is shown that when the direct coupling between fermion and Higgs field approaches zero, but the Dirac mass is kept finite, then the necessary condition of the fermion-monopole bound state is not satisfied. This result means that the Rubakov effect is absent for SU(2) monopole because of the Dirac mass.</p> <br/>Acta Physica Sinica. 1985 34(11): 1488-1493. Published 2005-03-31
THE FERMION'S MASS TERMS IN AN SU(2) MODEL AND THE RUBAKOV EFFECT
LI XlN-ZHOU, WANG KE-LIN, ZHANG JIAN-ZU
2005-03-31
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1488-1493.
article
doi:10.7498/aps.34.1488
10.7498/aps.34.1488
Acta Physica Sinica
34
11
2005-03-31
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1488
1488-1493
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1494
Author(s): XIAO DING-QUAN <br/><p>The excited-state polarization model is modified by taking into account the different pyroelectric processes in polar crystals and the difference between the mean emission frequency ν2 and the electronic transition frequency ν3 which results from the stokes shift in the radiative trasition. According to this model, the results for the dipole moment charge △μfrom different specimens of crystal LiNbO3 :Cr3+ used by different authors are identical within experimental errors: △μis about 3 Debye, and almost indepeudent of temperature in the whole experimental temperature region 50—300 K.</p> <br/>Acta Physica Sinica. 1985 34(11): 1494-1499. Published 2005-03-31
Author(s): XIAO DING-QUAN <br/><p>The excited-state polarization model is modified by taking into account the different pyroelectric processes in polar crystals and the difference between the mean emission frequency ν2 and the electronic transition frequency ν3 which results from the stokes shift in the radiative trasition. According to this model, the results for the dipole moment charge △μfrom different specimens of crystal LiNbO3 :Cr3+ used by different authors are identical within experimental errors: △μis about 3 Debye, and almost indepeudent of temperature in the whole experimental temperature region 50—300 K.</p> <br/>Acta Physica Sinica. 1985 34(11): 1494-1499. Published 2005-03-31
THE MODIFIED EXCITED-STATE POLARIZATION MODEL
XIAO DING-QUAN
2005-03-31
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1494-1499.
article
doi:10.7498/aps.34.1494
10.7498/aps.34.1494
Acta Physica Sinica
34
11
2005-03-31
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1494
1494-1499
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1500
Author(s): PAN XIAO-CHUAN, LI JIA-MING <br/><p>The differential cross section and total cross section of high-energy electron impact excitation can be calculated by Born approximation. The differential cross section is propotional to the so called generalized oscillator strength. The target atom or ion may be excited to infinite number of bound states and adjoint continuum states which can be treated in an unified manner by Quantum Defect Theory. Thus, we define generalized oscillator strength density (GOSD) as the generalized oscillator strength per unit of excitation energy. We have calculated the GOSD's of the lithium-like isoelectronic se-quence(Li, Be+, B++, C3+, Ne7+, Na8+, K16+) for excitation from the ground state to S, P, D and F channels. The scaling relation along isoelectronic sequence is discussed.</p> <br/>Acta Physica Sinica. 1985 34(11): 1500-1508. Published 2005-03-31
Author(s): PAN XIAO-CHUAN, LI JIA-MING <br/><p>The differential cross section and total cross section of high-energy electron impact excitation can be calculated by Born approximation. The differential cross section is propotional to the so called generalized oscillator strength. The target atom or ion may be excited to infinite number of bound states and adjoint continuum states which can be treated in an unified manner by Quantum Defect Theory. Thus, we define generalized oscillator strength density (GOSD) as the generalized oscillator strength per unit of excitation energy. We have calculated the GOSD's of the lithium-like isoelectronic se-quence(Li, Be+, B++, C3+, Ne7+, Na8+, K16+) for excitation from the ground state to S, P, D and F channels. The scaling relation along isoelectronic sequence is discussed.</p> <br/>Acta Physica Sinica. 1985 34(11): 1500-1508. Published 2005-03-31
SCALING RELATION OF GENERALIZED OSCILLATOR STRENGTH DENSITY ALONG ISOELECTRONIC SEQUENCE
PAN XIAO-CHUAN, LI JIA-MING
2005-03-31
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1500-1508.
article
doi:10.7498/aps.34.1500
10.7498/aps.34.1500
Acta Physica Sinica
34
11
2005-03-31
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1500
1500-1508
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1509
Author(s): CHEN CUN-LI <br/><p>The equation of four probes method for resistivity measurement requires point contacts and a definite configuration of probes array. In fact, the contacts are always with definite dimension. In this article, we drive the equations of measuring resistivity and surface sheet resistance, taking into account the contact dimension and putting the location of the four probes arbitrary. The in-line four probes and the square array four probes are two specific examples for the equations.</p> <br/>Acta Physica Sinica. 1985 34(11): 1509-1515. Published 2005-03-31
Author(s): CHEN CUN-LI <br/><p>The equation of four probes method for resistivity measurement requires point contacts and a definite configuration of probes array. In fact, the contacts are always with definite dimension. In this article, we drive the equations of measuring resistivity and surface sheet resistance, taking into account the contact dimension and putting the location of the four probes arbitrary. The in-line four probes and the square array four probes are two specific examples for the equations.</p> <br/>Acta Physica Sinica. 1985 34(11): 1509-1515. Published 2005-03-31
GENERAL EQUATION OF FOUR PROBES METHOD FOR RESISTIVITY MEASUREMENT OF SEMICONDUCTOR MATERIALS
CHEN CUN-LI
2005-03-31
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1509-1515.
article
doi:10.7498/aps.34.1509
10.7498/aps.34.1509
Acta Physica Sinica
34
11
2005-03-31
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1509
1509-1515
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//www.getgobooth.com/en/article/doi/10.7498/aps.34.1516
Author(s): CHEN JIN-CHANG, SI HUNG, ZHAN WEN-SHAN, SHEN BAO-GEN, ZHAO JIAN-GAO <br/><p>Structural relaxation kinetics and reversible relaxation processes of amorphous alloys Fe13.3 Ni69.6 B16.2 Si0.9 are discussed in this paper. Changes in the Curie temperature, Tc, due to various heat treatments are studied. It is found that Tc approaches equilibrium values after prolonged annealing, and the relaxation kinetics can be described by the relaxation time spectrum. Relaxation relaxation process can be explained by CSRO, and we note that the reversible change in one property does not imply that the change of entire structure is reversible.</p> <br/>Acta Physica Sinica. 1985 34(11): 1516-1520. Published 2005-03-31
Author(s): CHEN JIN-CHANG, SI HUNG, ZHAN WEN-SHAN, SHEN BAO-GEN, ZHAO JIAN-GAO <br/><p>Structural relaxation kinetics and reversible relaxation processes of amorphous alloys Fe13.3 Ni69.6 B16.2 Si0.9 are discussed in this paper. Changes in the Curie temperature, Tc, due to various heat treatments are studied. It is found that Tc approaches equilibrium values after prolonged annealing, and the relaxation kinetics can be described by the relaxation time spectrum. Relaxation relaxation process can be explained by CSRO, and we note that the reversible change in one property does not imply that the change of entire structure is reversible.</p> <br/>Acta Physica Sinica. 1985 34(11): 1516-1520. Published 2005-03-31
STRUCTURAL RELAXATION OF AMORPHOUS ALLOYS Fe13.3Ni69.6B16.2Si0.9
CHEN JIN-CHANG, SI HUNG, ZHAN WEN-SHAN, SHEN BAO-GEN, ZHAO JIAN-GAO
2005-03-31
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1985 34(11): 1516-1520.
article
doi:10.7498/aps.34.1516
10.7498/aps.34.1516
Acta Physica Sinica
34
11
2005-03-31
//www.getgobooth.com/en/article/doi/10.7498/aps.34.1516
1516-1520