Acta Physica Sinica //www.getgobooth.com/ 必威体育下载 daily 15 2024-08-20 10:33:38 apsoffice@iphy.ac.cn apsoffice@iphy.ac.cn 2024-08-20 10:33:38 zh Copyright ©Acta Physica Sinica All Rights Reserved. 京ICP备05002789号-1 Address: PostCode:100190 Phone: 010-82649829,82649241,82649863 Email: apsoffice@iphy.ac.cn Copyright ©Acta Physica Sinica All Rights Reserved apsoffice@iphy.ac.cn 1000-3290 <![CDATA[A STUDY ON SUBSTUTION OF Fe IN BaFe12O19 BY Mn]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.833 Author(s): FU HUA, ZHAI HONG-RU, ZHANG YU-CHANG, GU BEN-XI, LI JlNG-YUAN <br/><p>In this paper, we studied the substitution of Fe in BaFe12O19 by Mn. The main results are as follows: (1) For polycrystalline materials of composition BaFe12-xMnxO19, the amount of maximum substitution of Mn is x=4, and the valence of Mn ions are mostly 3+. (2) Mn ions enter only 12 k and 2 a sites, and noncolinear spin structure appears with higher content of Mn (3) The saturation magnetization σ, the anisotropy constant k1 and the Curie temperatur Tc decreas with the increase of Mn content. (4) The zero field splitting constant Dh of Mn in M-type hexagonal structure is lower then that in garnet structure.</p> <br/>Acta Physica Sinica. 1986 35(7): 833-840. Published 2005-07-14 Author(s): FU HUA, ZHAI HONG-RU, ZHANG YU-CHANG, GU BEN-XI, LI JlNG-YUAN <br/><p>In this paper, we studied the substitution of Fe in BaFe12O19 by Mn. The main results are as follows: (1) For polycrystalline materials of composition BaFe12-xMnxO19, the amount of maximum substitution of Mn is x=4, and the valence of Mn ions are mostly 3+. (2) Mn ions enter only 12 k and 2 a sites, and noncolinear spin structure appears with higher content of Mn (3) The saturation magnetization σ, the anisotropy constant k1 and the Curie temperatur Tc decreas with the increase of Mn content. (4) The zero field splitting constant Dh of Mn in M-type hexagonal structure is lower then that in garnet structure.</p> <br/>Acta Physica Sinica. 1986 35(7): 833-840. Published 2005-07-14 A STUDY ON SUBSTUTION OF Fe IN BaFe12O19 BY Mn FU HUA, ZHAI HONG-RU, ZHANG YU-CHANG, GU BEN-XI, LI JlNG-YUAN 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 833-840. article doi:10.7498/aps.35.833 10.7498/aps.35.833 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.833 833-840 <![CDATA[MAGNETIC PROPERTIES, ELECTRICAL RESISTIVITY AND CRYSTALLIZATION BEHAVIOR OF AMORPHOUS Fe90-xBxZr10 ALLOYS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.841 Author(s): SHEN BAO-GEN, ZHAN WEN-SHAN, ZHAO JIAN-GAO, CHEN JIN-CHANG <br/><p>The effects of B content on the magnetic and electrical properties and crystallization behavior of amorphous alloys based on FeZr are studied in this paper, and compared with amorphous FeB alloys. The reasons of the average magnetic moment per FeZr atoms. μFeZr and Curie temperatures Tc increase with increasing B content are explained. Finally, the scattering mechanisms of electrical resistivity at various temperatures and effects of B or Zr element on the crystallization temperature in these alloys are discussed.</p> <br/>Acta Physica Sinica. 1986 35(7): 841-849. Published 2005-07-14 Author(s): SHEN BAO-GEN, ZHAN WEN-SHAN, ZHAO JIAN-GAO, CHEN JIN-CHANG <br/><p>The effects of B content on the magnetic and electrical properties and crystallization behavior of amorphous alloys based on FeZr are studied in this paper, and compared with amorphous FeB alloys. The reasons of the average magnetic moment per FeZr atoms. μFeZr and Curie temperatures Tc increase with increasing B content are explained. Finally, the scattering mechanisms of electrical resistivity at various temperatures and effects of B or Zr element on the crystallization temperature in these alloys are discussed.</p> <br/>Acta Physica Sinica. 1986 35(7): 841-849. Published 2005-07-14 MAGNETIC PROPERTIES, ELECTRICAL RESISTIVITY AND CRYSTALLIZATION BEHAVIOR OF AMORPHOUS Fe90-xBxZr10 ALLOYS SHEN BAO-GEN, ZHAN WEN-SHAN, ZHAO JIAN-GAO, CHEN JIN-CHANG 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 841-849. article doi:10.7498/aps.35.841 10.7498/aps.35.841 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.841 841-849 <![CDATA[STUDIES ON PRODUCING AMORPHOUS ALLOY LAYERS BY BORON ION IMPLANTATION INTO POLYCRYSTALLINE IRON FILMS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.850 Author(s): ZHANG YUE-LU, MEI LIANG-MO, GUO YI-CHENG, GUO XIAO-QIN, CONG PEI-JIE <br/><p>Production of amorphous alloy layer in pure polycrystalline iron thin film by boron ion implantatiom has been studied and interesting phenomena have been observed such as the magnetic coercive field of the film decreases non-monotonously with increasing ion dose, etc. The possible mechanisms of the phenomena have been discussed.</p> <br/>Acta Physica Sinica. 1986 35(7): 850-854. Published 2005-07-14 Author(s): ZHANG YUE-LU, MEI LIANG-MO, GUO YI-CHENG, GUO XIAO-QIN, CONG PEI-JIE <br/><p>Production of amorphous alloy layer in pure polycrystalline iron thin film by boron ion implantatiom has been studied and interesting phenomena have been observed such as the magnetic coercive field of the film decreases non-monotonously with increasing ion dose, etc. The possible mechanisms of the phenomena have been discussed.</p> <br/>Acta Physica Sinica. 1986 35(7): 850-854. Published 2005-07-14 STUDIES ON PRODUCING AMORPHOUS ALLOY LAYERS BY BORON ION IMPLANTATION INTO POLYCRYSTALLINE IRON FILMS ZHANG YUE-LU, MEI LIANG-MO, GUO YI-CHENG, GUO XIAO-QIN, CONG PEI-JIE 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 850-854. article doi:10.7498/aps.35.850 10.7498/aps.35.850 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.850 850-854 <![CDATA[THE PERTURBATION SOLUTION OF OPTICAL BLOCH EQUATION WITH RELAXATION TERMS IN SATURATED SPECTROSCOPY]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.855 Author(s): WANG QING-JI, XIE CHUAN <br/><p>Tn this paper, the optical Bloeh equation with relaxation terms in saturated spe-ctroseopy is solved directly by using the perturbation theory. The reenrren formulas are given, approximate results of any order can be obtained from them. The first and second order solutions are derived and explained.</p> <br/>Acta Physica Sinica. 1986 35(7): 855-863. Published 2005-07-14 Author(s): WANG QING-JI, XIE CHUAN <br/><p>Tn this paper, the optical Bloeh equation with relaxation terms in saturated spe-ctroseopy is solved directly by using the perturbation theory. The reenrren formulas are given, approximate results of any order can be obtained from them. The first and second order solutions are derived and explained.</p> <br/>Acta Physica Sinica. 1986 35(7): 855-863. Published 2005-07-14 THE PERTURBATION SOLUTION OF OPTICAL BLOCH EQUATION WITH RELAXATION TERMS IN SATURATED SPECTROSCOPY WANG QING-JI, XIE CHUAN 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 855-863. article doi:10.7498/aps.35.855 10.7498/aps.35.855 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.855 855-863 <![CDATA[PULSE CALIBRATION TECHNIQUE OF X-RAY DETECTOR]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.864 Author(s): SUN JING-WEN <br/><p>A pulsed CuK X-ray source with flux intensity 1018-1019 K X-rays per sr per s has been produced using high current electron beam technique, it has been employed to calibrate the response of the silicon PIN diode detector to pulsed X-ray photon. An absolute X-ray monitor——P10 gas pulse ionization chamber has been used as a standard of the pulsed X-ray flux density, the automatic pulsed charge measuring instrument is controlled and Corrected in real time by a microcomputer. The measured uncertainty of the flux density is ±5%. This chamber is suitable for the range of energy flux rate 4×10-9-2×102 W/cm2 and the range of photon energy 1.5-10 keV. The calibrated accuracy of the detector is ±7.0%. It is found that the pulsed sensitivity of the silicon PIN diode is about 30% higher than the sensitivity calibrated by a steady X-ray beams.</p> <br/>Acta Physica Sinica. 1986 35(7): 864-873. Published 2005-07-14 Author(s): SUN JING-WEN <br/><p>A pulsed CuK X-ray source with flux intensity 1018-1019 K X-rays per sr per s has been produced using high current electron beam technique, it has been employed to calibrate the response of the silicon PIN diode detector to pulsed X-ray photon. An absolute X-ray monitor——P10 gas pulse ionization chamber has been used as a standard of the pulsed X-ray flux density, the automatic pulsed charge measuring instrument is controlled and Corrected in real time by a microcomputer. The measured uncertainty of the flux density is ±5%. This chamber is suitable for the range of energy flux rate 4×10-9-2×102 W/cm2 and the range of photon energy 1.5-10 keV. The calibrated accuracy of the detector is ±7.0%. It is found that the pulsed sensitivity of the silicon PIN diode is about 30% higher than the sensitivity calibrated by a steady X-ray beams.</p> <br/>Acta Physica Sinica. 1986 35(7): 864-873. Published 2005-07-14 PULSE CALIBRATION TECHNIQUE OF X-RAY DETECTOR SUN JING-WEN 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 864-873. article doi:10.7498/aps.35.864 10.7498/aps.35.864 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.864 864-873 <![CDATA[STABLE REGION OF TOKAMAK DEVICE FEEDBACK CONTROL (Ⅰ)——THEORETICAL]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.874 Author(s): ZHENG SHAO-BAI, SHEN ZHONG-QING <br/><p>In this paper, the evolution equations of feedback control of plasma current and horizontal displacement simultineously in a tokamak device are presented. Under the assumption of small disturbance and linear approximation, the stability criterion and the stable region of CT-6B tokamak feedback control is given.</p> <br/>Acta Physica Sinica. 1986 35(7): 874-881. Published 2005-07-14 Author(s): ZHENG SHAO-BAI, SHEN ZHONG-QING <br/><p>In this paper, the evolution equations of feedback control of plasma current and horizontal displacement simultineously in a tokamak device are presented. Under the assumption of small disturbance and linear approximation, the stability criterion and the stable region of CT-6B tokamak feedback control is given.</p> <br/>Acta Physica Sinica. 1986 35(7): 874-881. Published 2005-07-14 STABLE REGION OF TOKAMAK DEVICE FEEDBACK CONTROL (Ⅰ)——THEORETICAL ZHENG SHAO-BAI, SHEN ZHONG-QING 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 874-881. article doi:10.7498/aps.35.874 10.7498/aps.35.874 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.874 874-881 <![CDATA[STEADY-STATE ELECTRIC FIELD STRUCTURE AND DENSITY PROFILE IN A PLASMA IRRADIATED BY DOUBLE-FREQUENCY LASER]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.882 Author(s): ZHU SHI-TONG, SHEN WEN-DA <br/><p>The analytic expressions for steady-state electric field intensity and local scale length in a plasma irradiated by doublefrequency laser are derived. It is shown that the ponderomotive force due to double-frequency laser field would lead to the local density dip near critical surface and the anamolous increase and fluctuation of the critical scale length in some region of field intensity value.</p> <br/>Acta Physica Sinica. 1986 35(7): 882-888. Published 2005-07-14 Author(s): ZHU SHI-TONG, SHEN WEN-DA <br/><p>The analytic expressions for steady-state electric field intensity and local scale length in a plasma irradiated by doublefrequency laser are derived. It is shown that the ponderomotive force due to double-frequency laser field would lead to the local density dip near critical surface and the anamolous increase and fluctuation of the critical scale length in some region of field intensity value.</p> <br/>Acta Physica Sinica. 1986 35(7): 882-888. Published 2005-07-14 STEADY-STATE ELECTRIC FIELD STRUCTURE AND DENSITY PROFILE IN A PLASMA IRRADIATED BY DOUBLE-FREQUENCY LASER ZHU SHI-TONG, SHEN WEN-DA 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 882-888. article doi:10.7498/aps.35.882 10.7498/aps.35.882 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.882 882-888 <![CDATA[THE THERMAL BEHAVIOR OF ELASTIC CONSTANTS OF BERLINITE (α-AlPO4)]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.889 Author(s): WANG HONG, XU BIN, HAN JIAN-RU, LI TI-JIU, HUO LUO-YUN <br/><p>Samples of berlinite (α-AlPO4) have been grown by slow heating method. The thermal behavior of elastic prepeties have been studied by transmission method from 30℃ to 150℃. The equations for the temperature behevior of elastic constants have been obtained by polynomial least square method and the 1st, 2nd and 3rd order temperature coefficients of the elastic constants have been calculated (T0=25℃).</p> <br/>Acta Physica Sinica. 1986 35(7): 889-895. Published 2005-07-14 Author(s): WANG HONG, XU BIN, HAN JIAN-RU, LI TI-JIU, HUO LUO-YUN <br/><p>Samples of berlinite (α-AlPO4) have been grown by slow heating method. The thermal behavior of elastic prepeties have been studied by transmission method from 30℃ to 150℃. The equations for the temperature behevior of elastic constants have been obtained by polynomial least square method and the 1st, 2nd and 3rd order temperature coefficients of the elastic constants have been calculated (T0=25℃).</p> <br/>Acta Physica Sinica. 1986 35(7): 889-895. Published 2005-07-14 THE THERMAL BEHAVIOR OF ELASTIC CONSTANTS OF BERLINITE (α-AlPO4) WANG HONG, XU BIN, HAN JIAN-RU, LI TI-JIU, HUO LUO-YUN 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 889-895. article doi:10.7498/aps.35.889 10.7498/aps.35.889 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.889 889-895 <![CDATA[THE INFRARED DIVERGENCE RESPONSE OF STRUCTURAL RELAXATION IN GLASSES]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.896 Author(s): FAN XI-QING, WANG GUO-LIANG, LIU FU-SUI <br/><p>The infrared divergence response theory is applied to the two-level System model of structural defects in glasses, and the twopeak structure of the ultrasonic absorption is explained by this theory. It is reasoned out that the small low-temperature peak depends more strongly on frequency than that of the high-temperature peak. On the basis of indroducing the effective potential, a good agreement with experimental data for ultrasonic aibsorption in SiO2 is attained over the whole temperature range.</p> <br/>Acta Physica Sinica. 1986 35(7): 896-904. Published 2005-07-14 Author(s): FAN XI-QING, WANG GUO-LIANG, LIU FU-SUI <br/><p>The infrared divergence response theory is applied to the two-level System model of structural defects in glasses, and the twopeak structure of the ultrasonic absorption is explained by this theory. It is reasoned out that the small low-temperature peak depends more strongly on frequency than that of the high-temperature peak. On the basis of indroducing the effective potential, a good agreement with experimental data for ultrasonic aibsorption in SiO2 is attained over the whole temperature range.</p> <br/>Acta Physica Sinica. 1986 35(7): 896-904. Published 2005-07-14 THE INFRARED DIVERGENCE RESPONSE OF STRUCTURAL RELAXATION IN GLASSES FAN XI-QING, WANG GUO-LIANG, LIU FU-SUI 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 896-904. article doi:10.7498/aps.35.896 10.7498/aps.35.896 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.896 896-904 <![CDATA[MULTIPHONON ABSORPTION IN InP]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.905 Author(s): ZHANG YU-AI, JIANG DE-SHENG, XU ZHEN-JIA <br/><p>IR absorption measurements have been made using a high resolution Fourier-transform spectrometer on crystals of InP in the 400-4000 cm-1 region at temperature between 11-300 K. Very weak new absorption bands are observed, their absorption coefficients are ~10-1 cm-1, were observed at 996cm-1, 965cm-1, 932cm-1, 838cm-1, 776 cm-1, 742cm-1, 718cm-1,590cm-1, 558cm-1 and 538 cm-1. The frequencies and temperature dependence of these weak bands indicate that they arise from three-phonon processes and appropriate assignments are given. Using IR absorption technique, we observed for the first time the boron contamination in LEC(B2O3)-CZ InP crystals. The content of baron contamination has been proved to be ~10-16cm-1.</p> <br/>Acta Physica Sinica. 1986 35(7): 905-913. Published 2005-07-14 Author(s): ZHANG YU-AI, JIANG DE-SHENG, XU ZHEN-JIA <br/><p>IR absorption measurements have been made using a high resolution Fourier-transform spectrometer on crystals of InP in the 400-4000 cm-1 region at temperature between 11-300 K. Very weak new absorption bands are observed, their absorption coefficients are ~10-1 cm-1, were observed at 996cm-1, 965cm-1, 932cm-1, 838cm-1, 776 cm-1, 742cm-1, 718cm-1,590cm-1, 558cm-1 and 538 cm-1. The frequencies and temperature dependence of these weak bands indicate that they arise from three-phonon processes and appropriate assignments are given. Using IR absorption technique, we observed for the first time the boron contamination in LEC(B2O3)-CZ InP crystals. The content of baron contamination has been proved to be ~10-16cm-1.</p> <br/>Acta Physica Sinica. 1986 35(7): 905-913. Published 2005-07-14 MULTIPHONON ABSORPTION IN InP ZHANG YU-AI, JIANG DE-SHENG, XU ZHEN-JIA 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 905-913. article doi:10.7498/aps.35.905 10.7498/aps.35.905 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.905 905-913 <![CDATA[A NEW METHOD TO DETERMINE BACKSCATTERING FACTORS FOR QUANTITATIVE AUGER ANALYSIS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.914 Author(s): WANG QIAN, ZHANG QIANG-JI, HUA ZHONG-YI <br/><p>A new method is proposed for determining the backscattering factor using information provided by the background off an direct Auger spectrum N(E). Complicated calculations such as the Monte Carlo method were avoided, and the quantitative Auger analysis accuracy could be further improved since the calculations of backscattering factor was based on the spectra. The examples of determining the compositions of Au-Cu and Ag-Cu alloys are given. These results are compared with that obtained by other mothods.</p> <br/>Acta Physica Sinica. 1986 35(7): 914-921. Published 2005-07-14 Author(s): WANG QIAN, ZHANG QIANG-JI, HUA ZHONG-YI <br/><p>A new method is proposed for determining the backscattering factor using information provided by the background off an direct Auger spectrum N(E). Complicated calculations such as the Monte Carlo method were avoided, and the quantitative Auger analysis accuracy could be further improved since the calculations of backscattering factor was based on the spectra. The examples of determining the compositions of Au-Cu and Ag-Cu alloys are given. These results are compared with that obtained by other mothods.</p> <br/>Acta Physica Sinica. 1986 35(7): 914-921. Published 2005-07-14 A NEW METHOD TO DETERMINE BACKSCATTERING FACTORS FOR QUANTITATIVE AUGER ANALYSIS WANG QIAN, ZHANG QIANG-JI, HUA ZHONG-YI 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 914-921. article doi:10.7498/aps.35.914 10.7498/aps.35.914 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.914 914-921 <![CDATA[THEORETICAL INTERPRETATION OF RESONANCE RAMAN SCATTERING IN cis-POLYACETYLENE]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.922 Author(s): GUO YOU-JIANG, YU LU <br/><p>A bipolaron microscopic model is proposed in this paper to interpret theoretically the Raman scattering data in cis-polyacetylene on the basis of lattice relaxation theory. The coupling of electron to different phonon modes is taken into account, the coupling constants being determined from the infrared and the Raman data. The theoretical results thus obtained are compared with the experimental data and discussed. The method used in this paper can be generalized to other similar systems.</p> <br/>Acta Physica Sinica. 1986 35(7): 922-930. Published 2005-07-14 Author(s): GUO YOU-JIANG, YU LU <br/><p>A bipolaron microscopic model is proposed in this paper to interpret theoretically the Raman scattering data in cis-polyacetylene on the basis of lattice relaxation theory. The coupling of electron to different phonon modes is taken into account, the coupling constants being determined from the infrared and the Raman data. The theoretical results thus obtained are compared with the experimental data and discussed. The method used in this paper can be generalized to other similar systems.</p> <br/>Acta Physica Sinica. 1986 35(7): 922-930. Published 2005-07-14 THEORETICAL INTERPRETATION OF RESONANCE RAMAN SCATTERING IN cis-POLYACETYLENE GUO YOU-JIANG, YU LU 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 922-930. article doi:10.7498/aps.35.922 10.7498/aps.35.922 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.922 922-930 <![CDATA[EXACT CONTINUUM MODEL FOR POLYACETYLENE]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.931 Author(s): WU ZI-YU, WANG KE-LIN <br/><p>On the basis of the continuum version of the SSH Hamiltonian, we obtain a set of equations for the electronic wave function, which reduces to the BdG equations in the TLM model with neglect of certain terms. The new set of equations has been solved rigorously and analytically with the solution reducing to SSH's simple kink function in the zeroth approximation.</p> <br/>Acta Physica Sinica. 1986 35(7): 931-938. Published 2005-07-14 Author(s): WU ZI-YU, WANG KE-LIN <br/><p>On the basis of the continuum version of the SSH Hamiltonian, we obtain a set of equations for the electronic wave function, which reduces to the BdG equations in the TLM model with neglect of certain terms. The new set of equations has been solved rigorously and analytically with the solution reducing to SSH's simple kink function in the zeroth approximation.</p> <br/>Acta Physica Sinica. 1986 35(7): 931-938. Published 2005-07-14 EXACT CONTINUUM MODEL FOR POLYACETYLENE WU ZI-YU, WANG KE-LIN 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 931-938. article doi:10.7498/aps.35.931 10.7498/aps.35.931 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.931 931-938 <![CDATA[THE LOCAL DENSITY OF STATES FOR THE NARROW CHANNELS OF THE SEMICONDUCTOR SURFACE]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.939 Author(s): YE HONG-JUAN <br/><p>In the sub-micron channels of semiconductor surface, it has been found that the conductivity has oscillation structure with gate voltage. We calculate the local density of states for the narrow channel by using Green function method and see that the density of states shows a series of sharp peaks, which can be used to explain qualitatively the conductivity oscillation.</p> <br/>Acta Physica Sinica. 1986 35(7): 939-943. Published 2005-07-14 Author(s): YE HONG-JUAN <br/><p>In the sub-micron channels of semiconductor surface, it has been found that the conductivity has oscillation structure with gate voltage. We calculate the local density of states for the narrow channel by using Green function method and see that the density of states shows a series of sharp peaks, which can be used to explain qualitatively the conductivity oscillation.</p> <br/>Acta Physica Sinica. 1986 35(7): 939-943. Published 2005-07-14 THE LOCAL DENSITY OF STATES FOR THE NARROW CHANNELS OF THE SEMICONDUCTOR SURFACE YE HONG-JUAN 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 939-943. article doi:10.7498/aps.35.939 10.7498/aps.35.939 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.939 939-943 <![CDATA[A NEW SENSITIVE METHOD FOR DETECTING R. F. RESONANCE IN OPTICAL PUMPING EXPERIMENT]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.944 Author(s): LIU SHU-QIN, DONG TAI-QIAN <br/><p>By making use the influence of microwave-r.f. multi-quantum transition on the spectral line intensity of single quantum microwave transition, a new sensitive method for detecting r.f. resonance in optical pumping experiment is found.</p> <br/>Acta Physica Sinica. 1986 35(7): 944-946. Published 2005-07-14 Author(s): LIU SHU-QIN, DONG TAI-QIAN <br/><p>By making use the influence of microwave-r.f. multi-quantum transition on the spectral line intensity of single quantum microwave transition, a new sensitive method for detecting r.f. resonance in optical pumping experiment is found.</p> <br/>Acta Physica Sinica. 1986 35(7): 944-946. Published 2005-07-14 A NEW SENSITIVE METHOD FOR DETECTING R. F. RESONANCE IN OPTICAL PUMPING EXPERIMENT LIU SHU-QIN, DONG TAI-QIAN 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 944-946. article doi:10.7498/aps.35.944 10.7498/aps.35.944 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.944 944-946 <![CDATA[COMPARISION OF TWO COLLISION MODELS IN PLASMA]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.947 Author(s): ZHANG CHENG-FU <br/><p>In this paper, the effects of collision on the dispersion equation of plasma are discussed under two kinds of collision models (BGK model and LB model). Analysis shows that the main effect of collision is to change the usual dispersion function Z(ξ) into a generalized one W(ξ,ν). The properties of W function have been analysed and compared for two models. The effects of collision on low frequeny drift wave (local mode) and ion-acoustic wave have been discussed. It is shown that LB model is not only more reasonable physically than BGK model, but also more simple in calculation and expression.</p> <br/>Acta Physica Sinica. 1986 35(7): 947-952. Published 2005-07-14 Author(s): ZHANG CHENG-FU <br/><p>In this paper, the effects of collision on the dispersion equation of plasma are discussed under two kinds of collision models (BGK model and LB model). Analysis shows that the main effect of collision is to change the usual dispersion function Z(ξ) into a generalized one W(ξ,ν). The properties of W function have been analysed and compared for two models. The effects of collision on low frequeny drift wave (local mode) and ion-acoustic wave have been discussed. It is shown that LB model is not only more reasonable physically than BGK model, but also more simple in calculation and expression.</p> <br/>Acta Physica Sinica. 1986 35(7): 947-952. Published 2005-07-14 COMPARISION OF TWO COLLISION MODELS IN PLASMA ZHANG CHENG-FU 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 947-952. article doi:10.7498/aps.35.947 10.7498/aps.35.947 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.947 947-952 <![CDATA[THE HARMONIC EFFECT ON EXAFS AMPLITUDE IN POLY-ELEMENT SYSTEMS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.953 Author(s): WAN JUN, LU KUN-QUAN, ZHAO YA-QIN, CHANG LONG-CUN, FANG ZHENG-ZHI <br/><p>A method to calculate the harmonic effect on EXAFS amplitude for poly-element systems is given. Results calculated and measured are presented. They are consistent with each other.</p> <br/>Acta Physica Sinica. 1986 35(7): 953-955. Published 2005-07-14 Author(s): WAN JUN, LU KUN-QUAN, ZHAO YA-QIN, CHANG LONG-CUN, FANG ZHENG-ZHI <br/><p>A method to calculate the harmonic effect on EXAFS amplitude for poly-element systems is given. Results calculated and measured are presented. They are consistent with each other.</p> <br/>Acta Physica Sinica. 1986 35(7): 953-955. Published 2005-07-14 THE HARMONIC EFFECT ON EXAFS AMPLITUDE IN POLY-ELEMENT SYSTEMS WAN JUN, LU KUN-QUAN, ZHAO YA-QIN, CHANG LONG-CUN, FANG ZHENG-ZHI 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 953-955. article doi:10.7498/aps.35.953 10.7498/aps.35.953 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.953 953-955 <![CDATA[MEASUREMENT OF THE (5p1/2nd)3 AUTO-IONIZING LEVELS OF STRONTIUM]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.956 Author(s): WU BI-RU, ZHANG SEN, LU JIE, HU SU-FEN, QIU JI-ZHEN, SUN JIA-ZHEN <br/><p>The (5p1/2nd)3 (n=ll—24) auto-ionizing levels of Sr have been measured by the laser melti-step excitation technique. Their effective quantum numbers have been determined. The interaction with the (5p3/2nd)3 series has been discussed.</p> <br/>Acta Physica Sinica. 1986 35(7): 956-960. Published 2005-07-14 Author(s): WU BI-RU, ZHANG SEN, LU JIE, HU SU-FEN, QIU JI-ZHEN, SUN JIA-ZHEN <br/><p>The (5p1/2nd)3 (n=ll—24) auto-ionizing levels of Sr have been measured by the laser melti-step excitation technique. Their effective quantum numbers have been determined. The interaction with the (5p3/2nd)3 series has been discussed.</p> <br/>Acta Physica Sinica. 1986 35(7): 956-960. Published 2005-07-14 MEASUREMENT OF THE (5p1/2nd)3 AUTO-IONIZING LEVELS OF STRONTIUM WU BI-RU, ZHANG SEN, LU JIE, HU SU-FEN, QIU JI-ZHEN, SUN JIA-ZHEN 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 956-960. article doi:10.7498/aps.35.956 10.7498/aps.35.956 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.956 956-960 <![CDATA[THE INFLUENCE OF INTERFACIAL DIFFUSION ON THE ELECTRONIC STRUCTURES OF THE SUPERLATTICES]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.961 Author(s): PANG GEN-DI, XIONG SHI-JIE, CAI JIAN-HUA <br/><p>We have calculated the influence of the interfacial diffusion on the electronic structures of the metallic superlattices by using the CPA method. It is found that the local electronic densities of states, either corresponding to the regions of interdiffusion or to the regions without interdiff asion, are affected by this process of atomic diffusions.</p> <br/>Acta Physica Sinica. 1986 35(7): 961-964. Published 2005-07-14 Author(s): PANG GEN-DI, XIONG SHI-JIE, CAI JIAN-HUA <br/><p>We have calculated the influence of the interfacial diffusion on the electronic structures of the metallic superlattices by using the CPA method. It is found that the local electronic densities of states, either corresponding to the regions of interdiffusion or to the regions without interdiff asion, are affected by this process of atomic diffusions.</p> <br/>Acta Physica Sinica. 1986 35(7): 961-964. Published 2005-07-14 THE INFLUENCE OF INTERFACIAL DIFFUSION ON THE ELECTRONIC STRUCTURES OF THE SUPERLATTICES PANG GEN-DI, XIONG SHI-JIE, CAI JIAN-HUA 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 961-964. article doi:10.7498/aps.35.961 10.7498/aps.35.961 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.961 961-964 <![CDATA[A TEM STUDY OF Pd-Si THIN FILM SOLID-PHASE REACTION]]> //www.getgobooth.com/en/article/doi/10.7498/aps.35.965 Author(s): ZHANG JING, LIU AN-SHENG, WU ZI-QIN, GUO KE-XIN <br/><p>The initial silicide formation during the deposition of Pd to room-temperature Si (111) substrate and the dependence of Pd2Si-Si orientation relationship on Pd film thickness have been studied by TEM. The results show that the only silicide phase formed is Pd2Si under annealing temperature from 170℃ to 600℃. A thin layer of Pd2Si has grown without annealing, even when the substrate is kept in room-temperature. The Pd film thinner than 100 nm leads to epitaxial Pd2Si layer on Si (111), while the Pd film of about 400 nm gives the [0001] Pd2Si fiber texture. Various kinds of defect with high density exist in the silicide film and the interface.</p> <br/>Acta Physica Sinica. 1986 35(7): 965-968. Published 2005-07-14 Author(s): ZHANG JING, LIU AN-SHENG, WU ZI-QIN, GUO KE-XIN <br/><p>The initial silicide formation during the deposition of Pd to room-temperature Si (111) substrate and the dependence of Pd2Si-Si orientation relationship on Pd film thickness have been studied by TEM. The results show that the only silicide phase formed is Pd2Si under annealing temperature from 170℃ to 600℃. A thin layer of Pd2Si has grown without annealing, even when the substrate is kept in room-temperature. The Pd film thinner than 100 nm leads to epitaxial Pd2Si layer on Si (111), while the Pd film of about 400 nm gives the [0001] Pd2Si fiber texture. Various kinds of defect with high density exist in the silicide film and the interface.</p> <br/>Acta Physica Sinica. 1986 35(7): 965-968. Published 2005-07-14 A TEM STUDY OF Pd-Si THIN FILM SOLID-PHASE REACTION ZHANG JING, LIU AN-SHENG, WU ZI-QIN, GUO KE-XIN 2005-07-14 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1986 35(7): 965-968. article doi:10.7498/aps.35.965 10.7498/aps.35.965 Acta Physica Sinica 35 7 2005-07-14 //www.getgobooth.com/en/article/doi/10.7498/aps.35.965 965-968
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