//www.getgobooth.com/ 必威体育下载 daily 15 2024-08-20 10:33:38 apsoffice@iphy.ac.cn apsoffice@iphy.ac.cn 2024-08-20 10:33:38 zh Copyright ©Acta Physica Sinica All Rights Reserved. 京ICP备05002789号-1 Address: PostCode：100190 Phone: 010-82649829，82649241,82649863 Email: apsoffice@iphy.ac.cn Copyright ©Acta Physica Sinica All Rights Reserved apsoffice@iphy.ac.cn 1000-3290 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1215 Author(s): <br/><p>A new kind of oscillator configuration of free electron laser, the free electron cyclotron resonance laser is proposed and analyzed. The expressions for electron efficiency and startup current are given.</p> <br/>Acta Physica Sinica. 1989 38(8): 1215-1224. Published 1989-04-05 Author(s): <br/><p>A new kind of oscillator configuration of free electron laser, the free electron cyclotron resonance laser is proposed and analyzed. The expressions for electron efficiency and startup current are given.</p> <br/>Acta Physica Sinica. 1989 38(8): 1215-1224. Published 1989-04-05 FREE ELECTRON CYCLOTRON RESONANCE LASER 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1215-1224. article doi:10.7498/aps.38.1215 10.7498/aps.38.1215 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1215 1215-1224 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1225 Author(s): <br/><p>Starting from population density matrix equations, five kinds of nearresonant enhaneed three-photon eleetronic transitions in the interaetion between differently polarized laser fields and molecules with casecade four-level strueture and folding four-level structure are discussed respectively. And ,taking the third transition as the probe signal, the relative intensities and the characteristic of the signals are derived analytically. The line-shape factors and intensity factors of the relative intensities are greater by different degrees when compared with the of three-level molecules.Therefore the relative intensities of the probe signal may be greater by several orders. The Potential applications of these results in moleeular speetroscopic analysis are also diseussed.</p> <br/>Acta Physica Sinica. 1989 38(8): 1225-1234. Published 1989-04-05 Author(s): <br/><p>Starting from population density matrix equations, five kinds of nearresonant enhaneed three-photon eleetronic transitions in the interaetion between differently polarized laser fields and molecules with casecade four-level strueture and folding four-level structure are discussed respectively. And ,taking the third transition as the probe signal, the relative intensities and the characteristic of the signals are derived analytically. The line-shape factors and intensity factors of the relative intensities are greater by different degrees when compared with the of three-level molecules.Therefore the relative intensities of the probe signal may be greater by several orders. The Potential applications of these results in moleeular speetroscopic analysis are also diseussed.</p> <br/>Acta Physica Sinica. 1989 38(8): 1225-1234. Published 1989-04-05 THEORETICAL CALCULATION OF POLARIZATION SIGNALS FOR THREE一PHOTON TRANSITIONS 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1225-1234. article doi:10.7498/aps.38.1225 10.7498/aps.38.1225 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1225 1225-1234 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1235 Author(s): <br/><p>The steady and transient characteristic of lateral photovoltaic effect in a-Si:H juncitions have been explored by theoretical analysis. The results show that the theoretical predictions are in good agreement with the experiments .It 1is worthy to note that two important parameters of the sample (i,e.the sheet resistance l/as of a-Si:H and the transit time T_m) evaluated according the theoretical relations with the conventional accepted mobility and conductivity of undoped a-Si:H are much larger than that deduced from the experimental data .Based on this with a reasonable analysis, we suggest that electrons in a-Si:H layer may transport parallel to the junction with a surprisingly high mobiliry.</p> <br/>Acta Physica Sinica. 1989 38(8): 1235-1244. Published 1989-04-05 Author(s): <br/><p>The steady and transient characteristic of lateral photovoltaic effect in a-Si:H juncitions have been explored by theoretical analysis. The results show that the theoretical predictions are in good agreement with the experiments .It 1is worthy to note that two important parameters of the sample (i,e.the sheet resistance l/as of a-Si:H and the transit time T_m) evaluated according the theoretical relations with the conventional accepted mobility and conductivity of undoped a-Si:H are much larger than that deduced from the experimental data .Based on this with a reasonable analysis, we suggest that electrons in a-Si:H layer may transport parallel to the junction with a surprisingly high mobiliry.</p> <br/>Acta Physica Sinica. 1989 38(8): 1235-1244. Published 1989-04-05 LATERAL PHOTOVOLTAIC EFFECT IN a-Si:H JUNCTIONS 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1235-1244. article doi:10.7498/aps.38.1235 10.7498/aps.38.1235 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1235 1235-1244 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1245 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1989 38(8): 1245-1252. Published 1989-04-05 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1989 38(8): 1245-1252. Published 1989-04-05 MEASUREMENT OF ANISOTROPIC OPTICAL CONSTANTS BY ELLIPSOMETRY APPL ICATION ON KNSBM FERROELECTRIC CRYSIALS 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1245-1252. article doi:10.7498/aps.38.1245 10.7498/aps.38.1245 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1245 1245-1252 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1253 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1989 38(8): 1253-1258. Published 1989-04-05 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1989 38(8): 1253-1258. Published 1989-04-05 A STUDY OF GROWTH SECTOR BOUNDARIES IN NATURAL BERYLS BY X-RAY DIFFRACTION TOPOGRAPHY AND OPTICAL BIREFRINGENCE TOPOGRAPHY 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1253-1258. article doi:10.7498/aps.38.1253 10.7498/aps.38.1253 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1253 1253-1258 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1259 Author(s): <br/><p>Comparing the transmission spectra with the electron micrographs and Raman spectra of metal ions-silver sol systems, we summarized the general relations between the aggregation state of silver sol with surface enhancement factor.</p> <br/>Acta Physica Sinica. 1989 38(8): 1259-1264. Published 1989-04-05 Author(s): <br/><p>Comparing the transmission spectra with the electron micrographs and Raman spectra of metal ions-silver sol systems, we summarized the general relations between the aggregation state of silver sol with surface enhancement factor.</p> <br/>Acta Physica Sinica. 1989 38(8): 1259-1264. Published 1989-04-05 THE AGGREGATION EFFECT OF METAL IONS ON SILVER SOL AND THEIR RAMAN SPECTRA 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1259-1264. article doi:10.7498/aps.38.1259 10.7498/aps.38.1259 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1259 1259-1264 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1265 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1989 38(8): 1265-1270. Published 1989-04-05 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1989 38(8): 1265-1270. Published 1989-04-05 INTERFACIAL PROPERTIES OF Si/GaP(111) HETEROJUNCT10N GROWN BY MOLECULAR BEAM EPITAXY 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1265-1270. article doi:10.7498/aps.38.1265 10.7498/aps.38.1265 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1265 1265-1270 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1271 Author(s): <br/><p>The correlation factor u(R) m the quasi two dimensional system—the inversion layer is obtained with the effective interaction potential V_eff_(R) and the collective oscillation behavior of the electron gas. The pair correlation function the correlation energy and the many-body wave function have been calculated on the basis of the CBF theory.</p> <br/>Acta Physica Sinica. 1989 38(8): 1271-1279. Published 1989-04-05 Author(s): <br/><p>The correlation factor u(R) m the quasi two dimensional system—the inversion layer is obtained with the effective interaction potential V_eff_(R) and the collective oscillation behavior of the electron gas. The pair correlation function the correlation energy and the many-body wave function have been calculated on the basis of the CBF theory.</p> <br/>Acta Physica Sinica. 1989 38(8): 1271-1279. Published 1989-04-05 ELECTRON CORRELATION AND MANY一BODY WAVE FUNC-TION OF THE SEMICONDUCTOR INVERSION LAYER 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1271-1279. article doi:10.7498/aps.38.1271 10.7498/aps.38.1271 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1271 1271-1279 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1280 Author(s): <br/><p>Dielectric and pyroelectric properties have been measured in six ferroelectric niabate single crystals with tungsten bronze structure from 15K to room temperature. The dielectric and pyroelectric results showed that, in all the three kinds of ferroelectric niobate single crystals SBN , PBN, KNSBN with TTB structure, a new phase transition occurred between 50K and 70K, which were further supported by the X-ray experiment. The crystals symmetry changes from point group 4mm to point group mm**2,and the direction of ferroelectric polar-axis changes from the c-axis of tetragonal lattice cell to the b-axis of orghogonal lattice cell as the temperature drops. The difference between high frequency dielectric constants and low frequency dielectric constants indicates that the phase transition possesses diffuse character. According to the specific heat measurement, it is confirmed that this phase transition is a higher order transition. A model of structural change has been proposed to explain this phase transition. </p> <br/>Acta Physica Sinica. 1989 38(8): 1280-1289. Published 1989-04-05 Author(s): <br/><p>Dielectric and pyroelectric properties have been measured in six ferroelectric niabate single crystals with tungsten bronze structure from 15K to room temperature. The dielectric and pyroelectric results showed that, in all the three kinds of ferroelectric niobate single crystals SBN , PBN, KNSBN with TTB structure, a new phase transition occurred between 50K and 70K, which were further supported by the X-ray experiment. The crystals symmetry changes from point group 4mm to point group mm**2,and the direction of ferroelectric polar-axis changes from the c-axis of tetragonal lattice cell to the b-axis of orghogonal lattice cell as the temperature drops. The difference between high frequency dielectric constants and low frequency dielectric constants indicates that the phase transition possesses diffuse character. According to the specific heat measurement, it is confirmed that this phase transition is a higher order transition. A model of structural change has been proposed to explain this phase transition. </p> <br/>Acta Physica Sinica. 1989 38(8): 1280-1289. Published 1989-04-05 PHASE TRANSITION IN SOME FERROELECTRIC NIOBATE CRYSTALS WITH TUNGSTEN BRONZE STRUCTURE AT LOW TEMPERATURES 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1280-1289. article doi:10.7498/aps.38.1280 10.7498/aps.38.1280 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1280 1280-1289 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1290 Author(s): <br/><p>Internal friction of mono-and poly-crystal pure aluminum during creep at about 1Hz was studied. It was observed in monocrystal specimens that the internal friction decreased monotonously in the early stage of creep. A significant creep time-internal friction (1/Q-t) peak was observed during the latter half of the primary creep under suitable experimental conditions. And the internal friction kept constant during the secondary。But no 1/Q-t peak was observed with polycrystal sample under similar experimental conditions .We suggest that the appearance of 1/Q-t peak is due to the increase of the damping coefficient of moving dislocations during primary creep .A specific dislocation mechanism is proposed, and the expression thereby deduced for the internal friction during creep is satisfactorily consistent with the experiments.</p> <br/>Acta Physica Sinica. 1989 38(8): 1290-1298. Published 1989-04-05 Author(s): <br/><p>Internal friction of mono-and poly-crystal pure aluminum during creep at about 1Hz was studied. It was observed in monocrystal specimens that the internal friction decreased monotonously in the early stage of creep. A significant creep time-internal friction (1/Q-t) peak was observed during the latter half of the primary creep under suitable experimental conditions. And the internal friction kept constant during the secondary。But no 1/Q-t peak was observed with polycrystal sample under similar experimental conditions .We suggest that the appearance of 1/Q-t peak is due to the increase of the damping coefficient of moving dislocations during primary creep .A specific dislocation mechanism is proposed, and the expression thereby deduced for the internal friction during creep is satisfactorily consistent with the experiments.</p> <br/>Acta Physica Sinica. 1989 38(8): 1290-1298. Published 1989-04-05 INTERNAL FRICTION OF MONO一AND POLY-CRYSTAL PURE ALUMINUM DURING CREEP TESTS 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1290-1298. article doi:10.7498/aps.38.1290 10.7498/aps.38.1290 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1290 1290-1298 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1299 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1989 38(8): 1299-1305. Published 1989-04-05 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1989 38(8): 1299-1305. Published 1989-04-05 FOUR-PARAMETER MODEL FOR DESCRIBING THE BEHAVIOUR OF INTERNAL FRICTION MEASU.RED DURING CREEP TESTS 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1299-1305. article doi:10.7498/aps.38.1299 10.7498/aps.38.1299 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1299 1299-1305 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1306 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1989 38(8): 1306-1312. Published 1989-04-05 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1989 38(8): 1306-1312. Published 1989-04-05 DOUBLE一ELECTRON CAPTURE INTO EXCITED STATES IN COLLISION BETWEEN He_2+_AND H_2,O_2 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1306-1312. article doi:10.7498/aps.38.1306 10.7498/aps.38.1306 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1306 1306-1312 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1313 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1989 38(8): 1313-1321. Published 1989-04-05 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1989 38(8): 1313-1321. Published 1989-04-05 BALMER EMISSION IN COLLISIONS OF H_1,_H_2_,H_3_ WITH He, Ne, Ar 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1313-1321. article doi:10.7498/aps.38.1313 10.7498/aps.38.1313 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1313 1313-1321 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1322 Author(s): <br/><p>We obtained the time dependence of the transverse profile, veloeity and energy of longitudinal solitary waves in an elastic rod , in the case for which the viscoelastical damping is small but cannot be neglected ,by using the method of perturbation. The results showed that owing to the presence of viscoelastical damping, the height and velocity of solitary wave diminish, while the width increases with time and the energy dissipates gradually until it disappears.</p> <br/>Acta Physica Sinica. 1989 38(8): 1322-1328. Published 1989-04-05 Author(s): <br/><p>We obtained the time dependence of the transverse profile, veloeity and energy of longitudinal solitary waves in an elastic rod , in the case for which the viscoelastical damping is small but cannot be neglected ,by using the method of perturbation. The results showed that owing to the presence of viscoelastical damping, the height and velocity of solitary wave diminish, while the width increases with time and the energy dissipates gradually until it disappears.</p> <br/>Acta Physica Sinica. 1989 38(8): 1322-1328. Published 1989-04-05 THE INFLUENCE OF VISCOUS ELASTIC DAMPING ON THE LONGITUDINAL SOLITARY WAVES IN AN ELASTIC ROD 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1322-1328. article doi:10.7498/aps.38.1322 10.7498/aps.38.1322 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1322 1322-1328 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1329 Author(s): <br/><p>A new method to obtain concentration-dependent diffusion coefficient the method of approximation is developed. By applying the approximation method, we overcome some difficulties encountered in using Boltzmann-Matano method, ,and are able to calculate concentration-dependent diffusion coefficient as accurately as we want. The approximation method is proved to be valid both theoretically and practically.</p> <br/>Acta Physica Sinica. 1989 38(8): 1329-1333. Published 1989-04-05 Author(s): <br/><p>A new method to obtain concentration-dependent diffusion coefficient the method of approximation is developed. By applying the approximation method, we overcome some difficulties encountered in using Boltzmann-Matano method, ,and are able to calculate concentration-dependent diffusion coefficient as accurately as we want. The approximation method is proved to be valid both theoretically and practically.</p> <br/>Acta Physica Sinica. 1989 38(8): 1329-1333. Published 1989-04-05 CACULATION OF CONCENTRATION-DEPENDENT DIFFUSION COEFFICIENT---THE APPROXIMATION METHOD 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1329-1333. article doi:10.7498/aps.38.1329 10.7498/aps.38.1329 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1329 1329-1333 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1334 Author(s): <br/><p>Fractal growth in different systems is discussed primarily in this paper. By analyzing the transmission spectra of many kinds of fractal in different systems, we found that the position of the new absorption band in the transmission spectrum was proportional to logarithmic time. Furthermore we found that the whole curve of position of new absorption band as function of logarithmic time could be divided into two straight parts. This shows that while the fractal growth proceeds, there are mainly two different processes according to the fractal speed. </p> <br/>Acta Physica Sinica. 1989 38(8): 1334-1338. Published 1989-04-05 Author(s): <br/><p>Fractal growth in different systems is discussed primarily in this paper. By analyzing the transmission spectra of many kinds of fractal in different systems, we found that the position of the new absorption band in the transmission spectrum was proportional to logarithmic time. Furthermore we found that the whole curve of position of new absorption band as function of logarithmic time could be divided into two straight parts. This shows that while the fractal growth proceeds, there are mainly two different processes according to the fractal speed. </p> <br/>Acta Physica Sinica. 1989 38(8): 1334-1338. Published 1989-04-05 A STUDY OF FRACTAL GROWTH RULES USING THE METHOD OF TRANSMISSION SPECTRUM 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1334-1338. article doi:10.7498/aps.38.1334 10.7498/aps.38.1334 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1334 1334-1338 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1339 Author(s): <br/><p>We have studied the energy spectra and the electronic states of Bi-polaron in cis-(CH)_x_ with SSH-Hubbard model by using a selfconsistent approach. Four new localized electronic states are discovered. They form four discrete levels outside the conduction and valence bands: two locates near the bottom and the top of the conduction band, the other two near the valence band. The e-h symmetry is destroyed by the e-e interaction. And these localized electronic states vary with the coupling constant and the Hubbard e-e interaction parameter U.</p> <br/>Acta Physica Sinica. 1989 38(8): 1339-1343. Published 1989-04-05 Author(s): <br/><p>We have studied the energy spectra and the electronic states of Bi-polaron in cis-(CH)_x_ with SSH-Hubbard model by using a selfconsistent approach. Four new localized electronic states are discovered. They form four discrete levels outside the conduction and valence bands: two locates near the bottom and the top of the conduction band, the other two near the valence band. The e-h symmetry is destroyed by the e-e interaction. And these localized electronic states vary with the coupling constant and the Hubbard e-e interaction parameter U.</p> <br/>Acta Physica Sinica. 1989 38(8): 1339-1343. Published 1989-04-05 NEW LOCALIZED ELECTRONIC STATES OF Bi-POLARON IN cis-(CH)_x_ 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1339-1343. article doi:10.7498/aps.38.1339 10.7498/aps.38.1339 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1339 1339-1343 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1344 Author(s): <br/><p>Slip dislocation in In-doped and undoped GaAs singe crystal were investigated by means of X-ray topography. Different configurations of the slip dislocations were observed, which resulted from the different densities of dislocations. The mechanism of the slip dislocations and cellular network structure formation is also discussed preliminarily.</p> <br/>Acta Physica Sinica. 1989 38(8): 1344-1347. Published 1989-04-05 Author(s): <br/><p>Slip dislocation in In-doped and undoped GaAs singe crystal were investigated by means of X-ray topography. Different configurations of the slip dislocations were observed, which resulted from the different densities of dislocations. The mechanism of the slip dislocations and cellular network structure formation is also discussed preliminarily.</p> <br/>Acta Physica Sinica. 1989 38(8): 1344-1347. Published 1989-04-05 STUDY OF SLIP BY DISLOCATIONS IN GaAs CRYSTAL BY X一RAY TOPOGRAPHY 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1344-1347. article doi:10.7498/aps.38.1344 10.7498/aps.38.1344 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1344 1344-1347 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1348 Author(s): <br/><p>The Na_0.5_Bi_0.5_TiO_3-BaTIO_3_ system, at certain composition range, is a new kind of uItrasonic transducer ceramics material which has good and unique properties. By means of X-ray powder diffraction method, we precisely determined the cell parameters of Na_0.5_Bi_0.5_TiO_3, and propose a new type of Iattice structure for it different from that in previous reports. For this system, the Iattice Parameters at different compositions were determined. And the preliminary discussions on the relations between the properties, cell dimensions and compositions as well as the phase relation were also given.</p> <br/>Acta Physica Sinica. 1989 38(8): 1348-1353. Published 1989-04-05 Author(s): <br/><p>The Na_0.5_Bi_0.5_TiO_3-BaTIO_3_ system, at certain composition range, is a new kind of uItrasonic transducer ceramics material which has good and unique properties. By means of X-ray powder diffraction method, we precisely determined the cell parameters of Na_0.5_Bi_0.5_TiO_3, and propose a new type of Iattice structure for it different from that in previous reports. For this system, the Iattice Parameters at different compositions were determined. And the preliminary discussions on the relations between the properties, cell dimensions and compositions as well as the phase relation were also given.</p> <br/>Acta Physica Sinica. 1989 38(8): 1348-1353. Published 1989-04-05 X-RAY STUDY ON THE CRYSTALLOGRAPHIC CHARACTER-IZATION OF FERROELECTRIC CERAMICS:Na_0.5_Bi_0.5_TiO_3 AND ITS SOLID SOLUTION SYSTEM 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1348-1353. article doi:10.7498/aps.38.1348 10.7498/aps.38.1348 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1348 1348-1353 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1354 Author(s): <br/><p>Based on the data of element diffusion, formation heat of phases and their stabilities, we analysed the element diffusion at the interface of a binary diffusion couple and the formation of intermetallic phases. The results of experimental investigation for Ti-Ni, Nb-Sn and Ta-Pt system are presented.</p> <br/>Acta Physica Sinica. 1989 38(8): 1354-1359. Published 1989-04-05 Author(s): <br/><p>Based on the data of element diffusion, formation heat of phases and their stabilities, we analysed the element diffusion at the interface of a binary diffusion couple and the formation of intermetallic phases. The results of experimental investigation for Ti-Ni, Nb-Sn and Ta-Pt system are presented.</p> <br/>Acta Physica Sinica. 1989 38(8): 1354-1359. Published 1989-04-05 DIFFUSION OF ELEMENTS AND FORMATION OF INTERME-TALLIC PHASE AT THE INTERFACE OF THE BINARY DIFFUSION COUPLES 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1354-1359. article doi:10.7498/aps.38.1354 10.7498/aps.38.1354 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1354 1354-1359 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1360 Author(s): <br/><p>If there is a trapped state of a positron with binding energy lower than Debye energy at a small vacancy cluster, the capture of positrons from free state to this level will be strong temperature dependent . There are two kinds of the dependences and the specific trapping rate may be quite high, which shows great differences between small vacancy clusters and dislocations.</p> <br/>Acta Physica Sinica. 1989 38(8): 1360-1363. Published 1989-04-05 Author(s): <br/><p>If there is a trapped state of a positron with binding energy lower than Debye energy at a small vacancy cluster, the capture of positrons from free state to this level will be strong temperature dependent . There are two kinds of the dependences and the specific trapping rate may be quite high, which shows great differences between small vacancy clusters and dislocations.</p> <br/>Acta Physica Sinica. 1989 38(8): 1360-1363. Published 1989-04-05 PHONON一MEDIATED SPECIFIC TRAPPING RATE OF POSITRONS TO THE SHALLOW ENERGY LEVEL OF A SMALL VACANCY CLUSTER 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1360-1363. article doi:10.7498/aps.38.1360 10.7498/aps.38.1360 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1360 1360-1363 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1364 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1989 38(8): 1364-1368. Published 1989-04-05 Author(s): <br/><p></p> <br/>Acta Physica Sinica. 1989 38(8): 1364-1368. Published 1989-04-05 MEASURENENTS OF THE CROSS SECTION OF ELECTRON PAIR PRODUCTION NEAR THRESHOLD USING A LOW INTENSITY Co r一RAY SOURCE 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1364-1368. article doi:10.7498/aps.38.1364 10.7498/aps.38.1364 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1364 1364-1368 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1369 Author(s): <br/><p>A series of experimental facts for LnBa_2_Cu_3_O_7-y_ single crystals indicate that imperfect structure and non-uniformity composition in samples have an important effect on their normal state resistivity, normal-superconductive transition behavior, T。and critical current and so forth. We think that in imperfect single crystals, there also exist superconductive glass state effects, similar to single phase polycrystal LnBa_2_Cu_3_O_7-y_ samples.</p> <br/>Acta Physica Sinica. 1989 38(8): 1369-1374. Published 1989-04-05 Author(s): <br/><p>A series of experimental facts for LnBa_2_Cu_3_O_7-y_ single crystals indicate that imperfect structure and non-uniformity composition in samples have an important effect on their normal state resistivity, normal-superconductive transition behavior, T。and critical current and so forth. We think that in imperfect single crystals, there also exist superconductive glass state effects, similar to single phase polycrystal LnBa_2_Cu_3_O_7-y_ samples.</p> <br/>Acta Physica Sinica. 1989 38(8): 1369-1374. Published 1989-04-05 TRANSPORT PROPERTIES FOR IMPERFECT LnBa_2_Cu_3_O_7-y_ SINGLE CRYSTALS 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1369-1374. article doi:10.7498/aps.38.1369 10.7498/aps.38.1369 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1369 1369-1374 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1375 Author(s): <br/><p>In this paper, we construct a super-Beltrami algebra. It is related to the super-quasicon-formal transformation on super-Riemann surfaces and contains two super-conformal (NSR) slgebras as subalgebras. In this paper, we construct a super-Beltrami algebra. It is related to the super-quasicon-formal transformation on super-Riemann surfaces and contains two super-conformal (NSR) slgebras as subalgebras. </p> <br/>Acta Physica Sinica. 1989 38(8): 1375-1378. Published 1989-04-05 Author(s): <br/><p>In this paper, we construct a super-Beltrami algebra. It is related to the super-quasicon-formal transformation on super-Riemann surfaces and contains two super-conformal (NSR) slgebras as subalgebras. In this paper, we construct a super-Beltrami algebra. It is related to the super-quasicon-formal transformation on super-Riemann surfaces and contains two super-conformal (NSR) slgebras as subalgebras. </p> <br/>Acta Physica Sinica. 1989 38(8): 1375-1378. Published 1989-04-05 THE SUPER一BELTRAMI ALGEBRA OF SUPERQUASICONFORMAL TRANSFORMATION 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1375-1378. article doi:10.7498/aps.38.1375 10.7498/aps.38.1375 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1375 1375-1378 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1379 Author(s): <br/><p>Tungsten-silicon films were deposited on oxidized silicon wafers by direct current magnetron Co-sputtering from a W-Si mixture target. Films were then rapid thermal annealed in vacuum at temperature between 500 and 1000℃ for 15s. The sheet resistance of W-Si films as a function of the annealing temperature shows an anomalous maximum. This phenomenon has been studied by using XRD. We observed that there were W_5_Si_3_ appeared in the annealed film at temperature up to 1100℃, which contributed partly to the sheet resistance.</p> <br/>Acta Physica Sinica. 1989 38(8): 1379-1383. Published 1989-04-05 Author(s): <br/><p>Tungsten-silicon films were deposited on oxidized silicon wafers by direct current magnetron Co-sputtering from a W-Si mixture target. Films were then rapid thermal annealed in vacuum at temperature between 500 and 1000℃ for 15s. The sheet resistance of W-Si films as a function of the annealing temperature shows an anomalous maximum. This phenomenon has been studied by using XRD. We observed that there were W_5_Si_3_ appeared in the annealed film at temperature up to 1100℃, which contributed partly to the sheet resistance.</p> <br/>Acta Physica Sinica. 1989 38(8): 1379-1383. Published 1989-04-05 X-RAY DIFFRACTION INVESTIGATION FOR ANNEALING OF Co-SPUTTERED W-Si FILMS ON S10_2_ 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1379-1383. article doi:10.7498/aps.38.1379 10.7498/aps.38.1379 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1379 1379-1383 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1384 Author(s): <br/><p>In this paper, we generalize two theorems in General Relativity. The symmetry in the conditions for the theorems is relaxed to conformal symmetry. The generalized theorems read as follows: 1. Any conformally spherically symmetric electro-vacuum solution to Einstein equations must be the Reissner-Nordstrom solution. 2. Any conformally plane-symmetric electro-vacuum solution to Einstein equations must be the Kar solution. </p> <br/>Acta Physica Sinica. 1989 38(8): 1384-1390. Published 1989-04-05 Author(s): <br/><p>In this paper, we generalize two theorems in General Relativity. The symmetry in the conditions for the theorems is relaxed to conformal symmetry. The generalized theorems read as follows: 1. Any conformally spherically symmetric electro-vacuum solution to Einstein equations must be the Reissner-Nordstrom solution. 2. Any conformally plane-symmetric electro-vacuum solution to Einstein equations must be the Kar solution. </p> <br/>Acta Physica Sinica. 1989 38(8): 1384-1390. Published 1989-04-05 THE CONFORMALLY SPHERICALLY (PLANE-) SYMMETRIC ELECTRO-VACUUM SOLUTION TO EINSTEIN EQUAT10NS 1989-04-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(8): 1384-1390. article doi:10.7498/aps.38.1384 10.7498/aps.38.1384 Acta Physica Sinica 38 8 1989-04-05 //www.getgobooth.com/en/article/doi/10.7498/aps.38.1384 1384-1390

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