Acta Physica Sinica //www.getgobooth.com/ 必威体育下载 daily 15 2024-08-20 10:33:37 apsoffice@iphy.ac.cn apsoffice@iphy.ac.cn 2024-08-20 10:33:37 zh Copyright ©Acta Physica Sinica All Rights Reserved. 京ICP备05002789号-1 Address: PostCode:100190 Phone: 010-82649829,82649241,82649863 Email: apsoffice@iphy.ac.cn Copyright ©Acta Physica Sinica All Rights Reserved apsoffice@iphy.ac.cn 1000-3290 <![CDATA[SOLITON-LIKE SOLUTIONS OF GENERALIZED KdV EQUA-TION WITH EXTERNAL FORCE TERM]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1561 Author(s): ZHU ZUO-NONG <br/><p>In this paper, by means of B?cklund transformation of generalized KP equation, sditon-like Solutions of generalized kdV equation with external force term are obtained</p> <br/>Acta Physica Sinica. 1992 41(10): 1561-1566. Published 1992-05-05 Author(s): ZHU ZUO-NONG <br/><p>In this paper, by means of B?cklund transformation of generalized KP equation, sditon-like Solutions of generalized kdV equation with external force term are obtained</p> <br/>Acta Physica Sinica. 1992 41(10): 1561-1566. Published 1992-05-05 SOLITON-LIKE SOLUTIONS OF GENERALIZED KdV EQUA-TION WITH EXTERNAL FORCE TERM ZHU ZUO-NONG 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1561-1566. article doi:10.7498/aps.41.1561 10.7498/aps.41.1561 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1561 1561-1566 <![CDATA[INFRARED SPECTRA OF Pr-DOPED Y-Ba-Cu-O SYSTEM SUPERCONDUCTORS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1567 Author(s): ZENG WEN-SHENG, YANG XIAO-MING, LI ZEBNG-FA, ZHANG GUANG-YIN, SONG DE-YING, YAN SHAO-LIN <br/><p>The result of studies on the infrared spectra of PrxY1-xBa2Cu3O7-δ system superconductors are reported. It is found that the direct result of increasing the Pr content is that most reflectance features become stronger in the whole energy range (including midle infrared and far infrared). The fingureprint phonon of Y atom at 190cm-1 does not shift when the content of Pr changes. This confirm, that the valence of Pr in this system is greater than +3, which is the valence value of Y in YBa2Cu3O7-δ, and should be between +3 and +4. We also found that, after making the assignment of all phonons, the vibration modes whose strengths increase when the content of Pr increases must be the vibration modes in the CuO2 plane or parallel to the CuO2 plane. This case is much similar to the situ ation of decreasing oxygen content in the YBa2Cu3O7-δ system. It is showed that these vibrations in the CuO2 plane are important for the high-Tc superconduccivity.</p> <br/>Acta Physica Sinica. 1992 41(10): 1567-1574. Published 1992-05-05 Author(s): ZENG WEN-SHENG, YANG XIAO-MING, LI ZEBNG-FA, ZHANG GUANG-YIN, SONG DE-YING, YAN SHAO-LIN <br/><p>The result of studies on the infrared spectra of PrxY1-xBa2Cu3O7-δ system superconductors are reported. It is found that the direct result of increasing the Pr content is that most reflectance features become stronger in the whole energy range (including midle infrared and far infrared). The fingureprint phonon of Y atom at 190cm-1 does not shift when the content of Pr changes. This confirm, that the valence of Pr in this system is greater than +3, which is the valence value of Y in YBa2Cu3O7-δ, and should be between +3 and +4. We also found that, after making the assignment of all phonons, the vibration modes whose strengths increase when the content of Pr increases must be the vibration modes in the CuO2 plane or parallel to the CuO2 plane. This case is much similar to the situ ation of decreasing oxygen content in the YBa2Cu3O7-δ system. It is showed that these vibrations in the CuO2 plane are important for the high-Tc superconduccivity.</p> <br/>Acta Physica Sinica. 1992 41(10): 1567-1574. Published 1992-05-05 INFRARED SPECTRA OF Pr-DOPED Y-Ba-Cu-O SYSTEM SUPERCONDUCTORS ZENG WEN-SHENG, YANG XIAO-MING, LI ZEBNG-FA, ZHANG GUANG-YIN, SONG DE-YING, YAN SHAO-LIN 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1567-1574. article doi:10.7498/aps.41.1567 10.7498/aps.41.1567 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1567 1567-1574 <![CDATA[XRD AND EXAFS STUDIES ON THE PROCESS OF RELEASING HYDROGEN FROM NICKEL FOIL PERMEATED WITH HYDROGEN]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1575 Author(s): HU XIAO-JUN, WU QIU-LIN, MAN YI-JUN <br/><p>The process of releasing hydrogen from nickel foil permeated with hydrogen is investigated by XRD and a laboratory EXAFS equipment which is attached on a X-ray spectrometer. The results obtained by these two methods show that the phase content of NiH decrease exponentially in this process We also determine a definite atomic ratio of Ni and H in NiH phase and point out the location of hydrogen in the lattice. This laboratory. EXAFS equipment is proved to be suitable for the study of this kind of problem.</p> <br/>Acta Physica Sinica. 1992 41(10): 1575-1581. Published 1992-05-05 Author(s): HU XIAO-JUN, WU QIU-LIN, MAN YI-JUN <br/><p>The process of releasing hydrogen from nickel foil permeated with hydrogen is investigated by XRD and a laboratory EXAFS equipment which is attached on a X-ray spectrometer. The results obtained by these two methods show that the phase content of NiH decrease exponentially in this process We also determine a definite atomic ratio of Ni and H in NiH phase and point out the location of hydrogen in the lattice. This laboratory. EXAFS equipment is proved to be suitable for the study of this kind of problem.</p> <br/>Acta Physica Sinica. 1992 41(10): 1575-1581. Published 1992-05-05 XRD AND EXAFS STUDIES ON THE PROCESS OF RELEASING HYDROGEN FROM NICKEL FOIL PERMEATED WITH HYDROGEN HU XIAO-JUN, WU QIU-LIN, MAN YI-JUN 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1575-1581. article doi:10.7498/aps.41.1575 10.7498/aps.41.1575 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1575 1575-1581 <![CDATA[EMISSION SPECTRUM OF GAS PHASE CCl2]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1582 Author(s): CHEN YANG, LU QING-ZHENG, MA XING-XIAO, GUI ZHI-FENG, ZHAO XIAN-ZHANG, LU TONG-XING <br/><p>In DC discharge of CCl2 vapor, the emission spectrum from 520 to 630 nm has been observed and identified as the A→X transition of CC12 radical. About 400 bands were assigned to (v1′,v2′,0)→(v1″,v2″,0) progressions of 35Cl-C-35Cl and 35Cl-C-37Cl, and tabulated to Deslandres tables. Spectral analysis gave out the vibrational frequencies v1, v2 and their isotopic shifts in which the data of gas-phase CCl2 in ground state were not found yet in literatures.</p> <br/>Acta Physica Sinica. 1992 41(10): 1582-1589. Published 1992-05-05 Author(s): CHEN YANG, LU QING-ZHENG, MA XING-XIAO, GUI ZHI-FENG, ZHAO XIAN-ZHANG, LU TONG-XING <br/><p>In DC discharge of CCl2 vapor, the emission spectrum from 520 to 630 nm has been observed and identified as the A→X transition of CC12 radical. About 400 bands were assigned to (v1′,v2′,0)→(v1″,v2″,0) progressions of 35Cl-C-35Cl and 35Cl-C-37Cl, and tabulated to Deslandres tables. Spectral analysis gave out the vibrational frequencies v1, v2 and their isotopic shifts in which the data of gas-phase CCl2 in ground state were not found yet in literatures.</p> <br/>Acta Physica Sinica. 1992 41(10): 1582-1589. Published 1992-05-05 EMISSION SPECTRUM OF GAS PHASE CCl2 CHEN YANG, LU QING-ZHENG, MA XING-XIAO, GUI ZHI-FENG, ZHAO XIAN-ZHANG, LU TONG-XING 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1582-1589. article doi:10.7498/aps.41.1582 10.7498/aps.41.1582 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1582 1582-1589 <![CDATA[A STUDY ON DISSIPATION MECHANISM IN TWO-PHOTON LASER]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1590 Author(s): PENG JIN-SHENG, LI GAO-XIANG <br/><p>In this work, we have respectively investigated two-photon processes of a cascade three-level atom interacting with thermal and vacuum radiation fields by means of non-relativestic QED. We verified the important role of atomic thermal loss and two-photon transtion loss in the disspation processes. We proved the condition under which the thermal fluctuation can be neglected, and discussed, the character of laser cavity in which the two-photon laser can be produced.</p> <br/>Acta Physica Sinica. 1992 41(10): 1590-1597. Published 1992-05-05 Author(s): PENG JIN-SHENG, LI GAO-XIANG <br/><p>In this work, we have respectively investigated two-photon processes of a cascade three-level atom interacting with thermal and vacuum radiation fields by means of non-relativestic QED. We verified the important role of atomic thermal loss and two-photon transtion loss in the disspation processes. We proved the condition under which the thermal fluctuation can be neglected, and discussed, the character of laser cavity in which the two-photon laser can be produced.</p> <br/>Acta Physica Sinica. 1992 41(10): 1590-1597. Published 1992-05-05 A STUDY ON DISSIPATION MECHANISM IN TWO-PHOTON LASER PENG JIN-SHENG, LI GAO-XIANG 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1590-1597. article doi:10.7498/aps.41.1590 10.7498/aps.41.1590 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1590 1590-1597 <![CDATA[TEMPORAL ASPECTS OF ABSORPTIVE TWO-PHOTON OPTICAL BISTABILITY]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1598 Author(s): WANG YING-HAI, HU CHENG-SHENG, WANG ZHI-CHENG <br/><p>We investigate the temporal aspects of absorptive two-photon optical bistability described by a semiclassical theory in the limit of a fully developed hysteresis cycle and when all decay rates have comparable magnitude. We show by multiple time-scale perturbation analysis that near the high-transmission branch the behavior of the system is governed by an equation for the field amplitude which determines the long-time evolution of the system, whereas, near the low-transmission branch all dynamical variables vary on the long time scale, and it is possible to describe the transition between the two stable branch by simple equations.</p> <br/>Acta Physica Sinica. 1992 41(10): 1598-1604. Published 1992-05-05 Author(s): WANG YING-HAI, HU CHENG-SHENG, WANG ZHI-CHENG <br/><p>We investigate the temporal aspects of absorptive two-photon optical bistability described by a semiclassical theory in the limit of a fully developed hysteresis cycle and when all decay rates have comparable magnitude. We show by multiple time-scale perturbation analysis that near the high-transmission branch the behavior of the system is governed by an equation for the field amplitude which determines the long-time evolution of the system, whereas, near the low-transmission branch all dynamical variables vary on the long time scale, and it is possible to describe the transition between the two stable branch by simple equations.</p> <br/>Acta Physica Sinica. 1992 41(10): 1598-1604. Published 1992-05-05 TEMPORAL ASPECTS OF ABSORPTIVE TWO-PHOTON OPTICAL BISTABILITY WANG YING-HAI, HU CHENG-SHENG, WANG ZHI-CHENG 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1598-1604. article doi:10.7498/aps.41.1598 10.7498/aps.41.1598 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1598 1598-1604 <![CDATA[A KINETICS MODEL AND STUDY OF CuBr PULSED LASERS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1605 Author(s): CHENG CHENG, SUN WEI <br/><p>A kinetics model including five levels is presented according to the emission spectrum of Cu atom observed from a CuBr laser plasma. The numerically calculated laser power, peak time and weveform, by employing the experimental data of electron temperature and density, well conform to our measurement. At fixed input power, it is also shown that to change the difusion coefficient of the buffer gas will change the average temperature of the gas or the initial density of Cu atom, therefore, change the laser power as well.</p> <br/>Acta Physica Sinica. 1992 41(10): 1605-1612. Published 1992-05-05 Author(s): CHENG CHENG, SUN WEI <br/><p>A kinetics model including five levels is presented according to the emission spectrum of Cu atom observed from a CuBr laser plasma. The numerically calculated laser power, peak time and weveform, by employing the experimental data of electron temperature and density, well conform to our measurement. At fixed input power, it is also shown that to change the difusion coefficient of the buffer gas will change the average temperature of the gas or the initial density of Cu atom, therefore, change the laser power as well.</p> <br/>Acta Physica Sinica. 1992 41(10): 1605-1612. Published 1992-05-05 A KINETICS MODEL AND STUDY OF CuBr PULSED LASERS CHENG CHENG, SUN WEI 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1605-1612. article doi:10.7498/aps.41.1605 10.7498/aps.41.1605 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1605 1605-1612 <![CDATA[CAVITON FORMATION AND SECOND HARMONIC EMISSION DURING THE INTERACTION OF MICROWAVE WITH INHOMOGENEOUS PLASMA]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1613 Author(s): LIU JIAN-MIN, JIANG YONG, DING WEI-XING, HU GEN-ZE, YU CHANG-XUAN <br/><p>The experimental simulations of laser-plasma interaction process by means of the microwave-plasma interaction have been performed in a steady state plasma device. The evolution of cavitom in the nonlinear interaction is experimentally investigated. The good agreement between experimental results and numerical calculation of Zakharov equation is obtained. The second harmonic emission spectrum is measured, and the mechanism of red-shift of second harmonic frequency is discussed.</p> <br/>Acta Physica Sinica. 1992 41(10): 1613-1619. Published 1992-05-05 Author(s): LIU JIAN-MIN, JIANG YONG, DING WEI-XING, HU GEN-ZE, YU CHANG-XUAN <br/><p>The experimental simulations of laser-plasma interaction process by means of the microwave-plasma interaction have been performed in a steady state plasma device. The evolution of cavitom in the nonlinear interaction is experimentally investigated. The good agreement between experimental results and numerical calculation of Zakharov equation is obtained. The second harmonic emission spectrum is measured, and the mechanism of red-shift of second harmonic frequency is discussed.</p> <br/>Acta Physica Sinica. 1992 41(10): 1613-1619. Published 1992-05-05 CAVITON FORMATION AND SECOND HARMONIC EMISSION DURING THE INTERACTION OF MICROWAVE WITH INHOMOGENEOUS PLASMA LIU JIAN-MIN, JIANG YONG, DING WEI-XING, HU GEN-ZE, YU CHANG-XUAN 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1613-1619. article doi:10.7498/aps.41.1613 10.7498/aps.41.1613 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1613 1613-1619 <![CDATA[A STUDY ON BOND STRUCTURE OF NANOMETER-SIZED AMORPHOUS SILICON NITRIDE SOLIDS IN TERMS OF X-RAY RADIAL DISTRIBUTION FUNCTIONS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1620 Author(s): CAI SHU-ZHI, MU JI-MEI, ZHANG LI-DE, CHENG BEN-PEI <br/><p>The microstructure and bond character of the nanometer-sized amorphous silicon nitride solid (NANO-SNS), heat-treated in the temperature range of 25°-1000℃, were studied in terms of X-ray radial distribution functions. It was observed that the interfaces with a large volume fraction were not the "gas-like" structure but the short-range order structure, which is different from that inside the amorphous nanoparticle. Both Si-N bond length and coordination numbers of the first nearest neighbours(CN) in interfaces are less than that in traditional Si3N4 and there exist a large number of Si dangling and unsat-urated bonds. NANO-SNS has an nonty-pical covalent structure that contains lots of unsaturated and dangling bonds. This bond structure is different from the saturated covalent bond structure of traditional Si3N4.Due to the unsaturated character of the bond coordination numbers, the molecular form of NANO-SNS should be written as Si3-xN4-y. The appearence of strong polarity of NANO-SNS is closely related to unsaturated and dangling bonds.</p> <br/>Acta Physica Sinica. 1992 41(10): 1620-1626. Published 1992-05-05 Author(s): CAI SHU-ZHI, MU JI-MEI, ZHANG LI-DE, CHENG BEN-PEI <br/><p>The microstructure and bond character of the nanometer-sized amorphous silicon nitride solid (NANO-SNS), heat-treated in the temperature range of 25°-1000℃, were studied in terms of X-ray radial distribution functions. It was observed that the interfaces with a large volume fraction were not the "gas-like" structure but the short-range order structure, which is different from that inside the amorphous nanoparticle. Both Si-N bond length and coordination numbers of the first nearest neighbours(CN) in interfaces are less than that in traditional Si3N4 and there exist a large number of Si dangling and unsat-urated bonds. NANO-SNS has an nonty-pical covalent structure that contains lots of unsaturated and dangling bonds. This bond structure is different from the saturated covalent bond structure of traditional Si3N4.Due to the unsaturated character of the bond coordination numbers, the molecular form of NANO-SNS should be written as Si3-xN4-y. The appearence of strong polarity of NANO-SNS is closely related to unsaturated and dangling bonds.</p> <br/>Acta Physica Sinica. 1992 41(10): 1620-1626. Published 1992-05-05 A STUDY ON BOND STRUCTURE OF NANOMETER-SIZED AMORPHOUS SILICON NITRIDE SOLIDS IN TERMS OF X-RAY RADIAL DISTRIBUTION FUNCTIONS CAI SHU-ZHI, MU JI-MEI, ZHANG LI-DE, CHENG BEN-PEI 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1620-1626. article doi:10.7498/aps.41.1620 10.7498/aps.41.1620 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1620 1620-1626 <![CDATA[WHIRLPOOL STRUCTURE IN THE PROCESSES OF MICROCRYSTAL GROWTH BY CVD METHODS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1627 Author(s): WANG YOU-WEN, XU YU-QIN, DING ZI-SHANG, YAO HONG-NIAN <br/><p>The whirlpool structure have been observted in HREM investigation of Si : H films deposited by glow discharge and SiC ultrafine powder synthesized by thermal chemical vapor reaction method. In this structure, strong planes are arranged around its nuclei and this seems to be whirlpools in HREM image. In this article, the cheracters of whirlpool structure are described, its forming reason and the condition under which it can be retained are analysed, and the dependence of it on microcrystal nucleation and growth processes are discussed.</p> <br/>Acta Physica Sinica. 1992 41(10): 1627-1631. Published 1992-05-05 Author(s): WANG YOU-WEN, XU YU-QIN, DING ZI-SHANG, YAO HONG-NIAN <br/><p>The whirlpool structure have been observted in HREM investigation of Si : H films deposited by glow discharge and SiC ultrafine powder synthesized by thermal chemical vapor reaction method. In this structure, strong planes are arranged around its nuclei and this seems to be whirlpools in HREM image. In this article, the cheracters of whirlpool structure are described, its forming reason and the condition under which it can be retained are analysed, and the dependence of it on microcrystal nucleation and growth processes are discussed.</p> <br/>Acta Physica Sinica. 1992 41(10): 1627-1631. Published 1992-05-05 WHIRLPOOL STRUCTURE IN THE PROCESSES OF MICROCRYSTAL GROWTH BY CVD METHODS WANG YOU-WEN, XU YU-QIN, DING ZI-SHANG, YAO HONG-NIAN 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1627-1631. article doi:10.7498/aps.41.1627 10.7498/aps.41.1627 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1627 1627-1631 <![CDATA[AUGMENTED SPHERICAL WAVE FIRST-PRINCIPLE CALCULATION ON THE STACKING-FAULT ENERGY OF ALUMINIUM]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1632 Author(s): JIN QING-HUA, WANG PING-JI, DING DA-TONG, WANG DING-SHENG <br/><p>The stacking-faults are placed in a supercell which is repeated periodically. By choosing the supercell large enough, so that faults in neighboring cells do not interact much, the energy of one stacking fault may then be calculated. A first principle method (Augmented Spherical Wave Method) is used to calculate the energies of the intrinsic and extrinsic stacking faults in aluminium. The values found are ΓISF=154erg/cm2 and ΓESF=138erg/cm2 respectively. The results are quite reasonable as compared with experimental data.</p> <br/>Acta Physica Sinica. 1992 41(10): 1632-1637. Published 1992-05-05 Author(s): JIN QING-HUA, WANG PING-JI, DING DA-TONG, WANG DING-SHENG <br/><p>The stacking-faults are placed in a supercell which is repeated periodically. By choosing the supercell large enough, so that faults in neighboring cells do not interact much, the energy of one stacking fault may then be calculated. A first principle method (Augmented Spherical Wave Method) is used to calculate the energies of the intrinsic and extrinsic stacking faults in aluminium. The values found are ΓISF=154erg/cm2 and ΓESF=138erg/cm2 respectively. The results are quite reasonable as compared with experimental data.</p> <br/>Acta Physica Sinica. 1992 41(10): 1632-1637. Published 1992-05-05 AUGMENTED SPHERICAL WAVE FIRST-PRINCIPLE CALCULATION ON THE STACKING-FAULT ENERGY OF ALUMINIUM JIN QING-HUA, WANG PING-JI, DING DA-TONG, WANG DING-SHENG 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1632-1637. article doi:10.7498/aps.41.1632 10.7498/aps.41.1632 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1632 1632-1637 <![CDATA[BIFURCATION STRUCTURE AND SCALING PROPERTY OF DUFFING'S EQUATION]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1638 Author(s): ZHU SHUN-QUAN, XIE FA-GENG, HU GANG <br/><p>Symmetric cubic Duffing's equation can be identified to three-parameter equation by using scaling transformation. Duffing's equation with, negative linear term has a closed bifurcation region under weak periodic force, the bifurcation areas contract with increasing the linear coefficient. The equation has a set of self-similar bifurcation regions under strong periodic force. The scaling property of this regions is found and discussed in terms of a one-dimensional map, the theoretical result is in good agreement with the computational result.</p> <br/>Acta Physica Sinica. 1992 41(10): 1638-1646. Published 1992-05-05 Author(s): ZHU SHUN-QUAN, XIE FA-GENG, HU GANG <br/><p>Symmetric cubic Duffing's equation can be identified to three-parameter equation by using scaling transformation. Duffing's equation with, negative linear term has a closed bifurcation region under weak periodic force, the bifurcation areas contract with increasing the linear coefficient. The equation has a set of self-similar bifurcation regions under strong periodic force. The scaling property of this regions is found and discussed in terms of a one-dimensional map, the theoretical result is in good agreement with the computational result.</p> <br/>Acta Physica Sinica. 1992 41(10): 1638-1646. Published 1992-05-05 BIFURCATION STRUCTURE AND SCALING PROPERTY OF DUFFING'S EQUATION ZHU SHUN-QUAN, XIE FA-GENG, HU GANG 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1638-1646. article doi:10.7498/aps.41.1638 10.7498/aps.41.1638 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1638 1638-1646 <![CDATA[STUDY ON WETTING TRANSITION IN A FLUID MIXTURE——CRITICAL EXPONENTS IN THE WETTING TRANSITION]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1647 Author(s): Song Yan, Ding E-Jiang, Huang Zu-qia <br/><p>The expression of critical exponents in wetting transition at two-phase and three-phase coex-istence in Sullivan mixture are studied, It is found that the critical exponents depend neither on the model parameters not on the symmetry of dynamical potential, i. e.: the exponents have universality.</p> <br/>Acta Physica Sinica. 1992 41(10): 1647-1651. Published 1992-05-05 Author(s): Song Yan, Ding E-Jiang, Huang Zu-qia <br/><p>The expression of critical exponents in wetting transition at two-phase and three-phase coex-istence in Sullivan mixture are studied, It is found that the critical exponents depend neither on the model parameters not on the symmetry of dynamical potential, i. e.: the exponents have universality.</p> <br/>Acta Physica Sinica. 1992 41(10): 1647-1651. Published 1992-05-05 STUDY ON WETTING TRANSITION IN A FLUID MIXTURE——CRITICAL EXPONENTS IN THE WETTING TRANSITION Song Yan, Ding E-Jiang, Huang Zu-qia 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1647-1651. article doi:10.7498/aps.41.1647 10.7498/aps.41.1647 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1647 1647-1651 <![CDATA[LOCAL ELECTRONIC PROPERTIES OF A CLASS OF ONE-DIM-ENSIONAL QUASICRYSTALS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1652 Author(s): YAN XIAO-HONG, YAN JIA-REN, ZHONG JIAN-XIN, YOU JIAN-QIANG <br/><p>Using the extended real-space renormalizaation-group approach, we study the local electr-onic properties of a class of one-dimensional quasicrystals (the generalized Fibonacci chains) in the framework of tight-binding model. These quasiperiodic systems are termed the An chains, which are associated with the sequences generated by the inflation rule (A, B)→(AnB, A). We introduce 2n2+1 transformations for calculating the local electronic Green's function and the local electronic density of state at any site in any one of An chains for the diagonal, offdiago-nal and combined models. It is shown that this approach is effective and the local electronic density of states is critical, just as that of Fibonacci quasicrystal.</p> <br/>Acta Physica Sinica. 1992 41(10): 1652-1660. Published 1992-05-05 Author(s): YAN XIAO-HONG, YAN JIA-REN, ZHONG JIAN-XIN, YOU JIAN-QIANG <br/><p>Using the extended real-space renormalizaation-group approach, we study the local electr-onic properties of a class of one-dimensional quasicrystals (the generalized Fibonacci chains) in the framework of tight-binding model. These quasiperiodic systems are termed the An chains, which are associated with the sequences generated by the inflation rule (A, B)→(AnB, A). We introduce 2n2+1 transformations for calculating the local electronic Green's function and the local electronic density of state at any site in any one of An chains for the diagonal, offdiago-nal and combined models. It is shown that this approach is effective and the local electronic density of states is critical, just as that of Fibonacci quasicrystal.</p> <br/>Acta Physica Sinica. 1992 41(10): 1652-1660. Published 1992-05-05 LOCAL ELECTRONIC PROPERTIES OF A CLASS OF ONE-DIM-ENSIONAL QUASICRYSTALS YAN XIAO-HONG, YAN JIA-REN, ZHONG JIAN-XIN, YOU JIAN-QIANG 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1652-1660. article doi:10.7498/aps.41.1652 10.7498/aps.41.1652 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1652 1652-1660 <![CDATA[ELECTRONIC STRUCTURE OF THE ONE-DIMENSIONAL NANOMETER SOLID STATE MODEL]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1661 Author(s): XU HUI, WEN SHENG <br/><p>The electronic structure of the one-dimensonal nanometer solid state model is discussed in terms of the grain size and the disordered degree of the grain surface by the computation of the density of electronic states. The result shows that the effect of the grained size on the electronic structure is great, and the disordered degree of the trained surface cause mainly the change of the energy width and the magnitude of the density of state.</p> <br/>Acta Physica Sinica. 1992 41(10): 1661-1665. Published 1992-05-05 Author(s): XU HUI, WEN SHENG <br/><p>The electronic structure of the one-dimensonal nanometer solid state model is discussed in terms of the grain size and the disordered degree of the grain surface by the computation of the density of electronic states. The result shows that the effect of the grained size on the electronic structure is great, and the disordered degree of the trained surface cause mainly the change of the energy width and the magnitude of the density of state.</p> <br/>Acta Physica Sinica. 1992 41(10): 1661-1665. Published 1992-05-05 ELECTRONIC STRUCTURE OF THE ONE-DIMENSIONAL NANOMETER SOLID STATE MODEL XU HUI, WEN SHENG 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1661-1665. article doi:10.7498/aps.41.1661 10.7498/aps.41.1661 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1661 1661-1665 <![CDATA[DISTRIBUTION OF ELECTRONIC LOCALISATION IN THE DISORDERED SYSTEM]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1666 Author(s): XU HUI, ZENG HONG-TAO <br/><p>The distribution of electronic localisetion n the disordered system of 2000 particles is obtained by a new method for calculating eigenvector. The distribution is discussed with the density of states and the calculation error. The result shows that the distribution is changed with the energy, the distribution area may cover the entire system, and the distribution is affected by the disorder degree.</p> <br/>Acta Physica Sinica. 1992 41(10): 1666-1671. Published 1992-05-05 Author(s): XU HUI, ZENG HONG-TAO <br/><p>The distribution of electronic localisetion n the disordered system of 2000 particles is obtained by a new method for calculating eigenvector. The distribution is discussed with the density of states and the calculation error. The result shows that the distribution is changed with the energy, the distribution area may cover the entire system, and the distribution is affected by the disorder degree.</p> <br/>Acta Physica Sinica. 1992 41(10): 1666-1671. Published 1992-05-05 DISTRIBUTION OF ELECTRONIC LOCALISATION IN THE DISORDERED SYSTEM XU HUI, ZENG HONG-TAO 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1666-1671. article doi:10.7498/aps.41.1666 10.7498/aps.41.1666 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1666 1666-1671 <![CDATA[THEORETICAL CALCULATION OF QUANTUM EFFICIENCY FOR FIELD-ASSISTED InP/InGaAsP SEMICONDUCTOR PHOTOCATHODES]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1672 Author(s): LI JIN-MIN, GUO LI-HUI, HOU XUN <br/><p>The factors determining quantum efficiency of field-assisted InP/InGaAsP semiconductor photocathodes have been analysed in detail in the paper. The transmission process of electrons in the absorption layer and transferred-electron process in the emission layer as well as the escape probability of electrons in the surface of emission layer have been calculated quantitatively on the basis of continuity equations and tunnelling effect of quantum mechanics. The curves of quantum efficiency versus wavelength for various biases have been obtained. The results show that the quantum efficiency of semiconductor photocathode in the range 0.9-1.25μm can be risen two orders of magnitude or more under a proper bias. It is helpful in designing the structure of semiconductor photocathodes and choose the optimum conditions of operation.</p> <br/>Acta Physica Sinica. 1992 41(10): 1672-1678. Published 1992-05-05 Author(s): LI JIN-MIN, GUO LI-HUI, HOU XUN <br/><p>The factors determining quantum efficiency of field-assisted InP/InGaAsP semiconductor photocathodes have been analysed in detail in the paper. The transmission process of electrons in the absorption layer and transferred-electron process in the emission layer as well as the escape probability of electrons in the surface of emission layer have been calculated quantitatively on the basis of continuity equations and tunnelling effect of quantum mechanics. The curves of quantum efficiency versus wavelength for various biases have been obtained. The results show that the quantum efficiency of semiconductor photocathode in the range 0.9-1.25μm can be risen two orders of magnitude or more under a proper bias. It is helpful in designing the structure of semiconductor photocathodes and choose the optimum conditions of operation.</p> <br/>Acta Physica Sinica. 1992 41(10): 1672-1678. Published 1992-05-05 THEORETICAL CALCULATION OF QUANTUM EFFICIENCY FOR FIELD-ASSISTED InP/InGaAsP SEMICONDUCTOR PHOTOCATHODES LI JIN-MIN, GUO LI-HUI, HOU XUN 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1672-1678. article doi:10.7498/aps.41.1672 10.7498/aps.41.1672 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1672 1672-1678 <![CDATA[INVESTIGATION OF THERMAL CONDUCTANCE ON BOLOMETRIC INFRARED DETECTOR OF HI GH Tc SUPERCONDUCTING FILM GROWN ON MULTILAYER SUBSTRATE]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1679 Author(s): WANG DE-NING, CHEN HONG, WANG WEI-YUAN <br/><p>In this paper, we set up the model of Gaussian distribution on the temperature of illuminated superconducting film and derive a serial formula, from which the equation of the substrate thermal conductance G3= 2πks· d · y(a(t),b(t),r) can be obtained. It can be used not only for G of single-layer substrate, but also for G of multi-layer substrate. The calculated results are in good agreement with the experimental ones.Using Maths CAD programm, the relations between illumination radius r, substrate thickness d or frequency f and G3 could be obtained. Based on the above, the optimized structure or art parameters of the detector can be selected and some effective methods for improving its properties will be considered.</p> <br/>Acta Physica Sinica. 1992 41(10): 1679-1985. Published 1992-05-05 Author(s): WANG DE-NING, CHEN HONG, WANG WEI-YUAN <br/><p>In this paper, we set up the model of Gaussian distribution on the temperature of illuminated superconducting film and derive a serial formula, from which the equation of the substrate thermal conductance G3= 2πks· d · y(a(t),b(t),r) can be obtained. It can be used not only for G of single-layer substrate, but also for G of multi-layer substrate. The calculated results are in good agreement with the experimental ones.Using Maths CAD programm, the relations between illumination radius r, substrate thickness d or frequency f and G3 could be obtained. Based on the above, the optimized structure or art parameters of the detector can be selected and some effective methods for improving its properties will be considered.</p> <br/>Acta Physica Sinica. 1992 41(10): 1679-1985. Published 1992-05-05 INVESTIGATION OF THERMAL CONDUCTANCE ON BOLOMETRIC INFRARED DETECTOR OF HI GH Tc SUPERCONDUCTING FILM GROWN ON MULTILAYER SUBSTRATE WANG DE-NING, CHEN HONG, WANG WEI-YUAN 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1679-1985. article doi:10.7498/aps.41.1679 10.7498/aps.41.1679 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1679 1679-1985 <![CDATA[ANTIFERROMAGNETIC THEORETICAL CALCULATION FOR HlGH-Tc SUPERCONDUCTORS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1686 Author(s): DU AN, WEI GUO-ZHU, NIE HUI-QUAN <br/><p>Considering layer-structural characteristico of high-Tc superconductors, the effective Hamiltonian is derived within linear spin wave approximation for aniso-tropic three-dimensional Hubbard model in the large U limit. The Sublattice magnetization, internal energy, Specific heat, parallel and perpindicular susceptibilies of the system are Calculated by using the equation of motion for matrix Green's function. It is shown that the ratio (δ=J⊥/J) of antiferromagnetic interplanar Coupling to planar coupling has an important effect upon these quantities. In the Low temperature regime T?2J(2+δ)/kB, a characteristic temperature T0=2J(2δ(2+δ))1/2/kB is given, the asympototic expressions of these quantities are respectively obtained for T?T0 and T?T0.</p> <br/>Acta Physica Sinica. 1992 41(10): 1686-1693. Published 1992-05-05 Author(s): DU AN, WEI GUO-ZHU, NIE HUI-QUAN <br/><p>Considering layer-structural characteristico of high-Tc superconductors, the effective Hamiltonian is derived within linear spin wave approximation for aniso-tropic three-dimensional Hubbard model in the large U limit. The Sublattice magnetization, internal energy, Specific heat, parallel and perpindicular susceptibilies of the system are Calculated by using the equation of motion for matrix Green's function. It is shown that the ratio (δ=J⊥/J) of antiferromagnetic interplanar Coupling to planar coupling has an important effect upon these quantities. In the Low temperature regime T?2J(2+δ)/kB, a characteristic temperature T0=2J(2δ(2+δ))1/2/kB is given, the asympototic expressions of these quantities are respectively obtained for T?T0 and T?T0.</p> <br/>Acta Physica Sinica. 1992 41(10): 1686-1693. Published 1992-05-05 ANTIFERROMAGNETIC THEORETICAL CALCULATION FOR HlGH-Tc SUPERCONDUCTORS DU AN, WEI GUO-ZHU, NIE HUI-QUAN 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1686-1693. article doi:10.7498/aps.41.1686 10.7498/aps.41.1686 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1686 1686-1693 <![CDATA[ISOTHERMAL AGING OF PERMEABILITY OF AMORPHOUS Fe-Ni-Si-B ALLOYS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1694 Author(s): WANG ZHI, HE KAI-VUAN <br/><p>Changes of permeability have been measured for as-received amorphous (Fe1-xNix)76Si8B16 alloys after aging for different times at relative low temperatures (65-150℃). The results indicate that the permeability is almost unchanged after aging below 65℃ but it varies obviously above 100℃. The changes of permeability are dependent on the alloy compositions and can be interpreted in terms of the changes of stress, magnetostriction and induced magnetic anisotropy during aging.</p> <br/>Acta Physica Sinica. 1992 41(10): 1694-1699. Published 1992-05-05 Author(s): WANG ZHI, HE KAI-VUAN <br/><p>Changes of permeability have been measured for as-received amorphous (Fe1-xNix)76Si8B16 alloys after aging for different times at relative low temperatures (65-150℃). The results indicate that the permeability is almost unchanged after aging below 65℃ but it varies obviously above 100℃. The changes of permeability are dependent on the alloy compositions and can be interpreted in terms of the changes of stress, magnetostriction and induced magnetic anisotropy during aging.</p> <br/>Acta Physica Sinica. 1992 41(10): 1694-1699. Published 1992-05-05 ISOTHERMAL AGING OF PERMEABILITY OF AMORPHOUS Fe-Ni-Si-B ALLOYS WANG ZHI, HE KAI-VUAN 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1694-1699. article doi:10.7498/aps.41.1694 10.7498/aps.41.1694 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1694 1694-1699 <![CDATA[SPIN DEFECT STATES IN HYDROGENATED AMORPHOUS GERMANIUM-CARBON FILMS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1700 Author(s): CHEN GUANG-HUA, YU GONG, ZHANG FANG-QING, WU TIAN-XI <br/><p>Using in situ electron spin resonance(ESR) technique, we have studied the type, the density, the temperature dependence and the thermal dynamic behavior of defects in rf-reactively sputtered a-Ge1-xCx: H films. In the decomposition process of the ESR spectra, we found that the spectra have an asymmetrical component. Quantitative analysis of the component and the explanation of its origin are given.</p> <br/>Acta Physica Sinica. 1992 41(10): 1700-1705. Published 1992-05-05 Author(s): CHEN GUANG-HUA, YU GONG, ZHANG FANG-QING, WU TIAN-XI <br/><p>Using in situ electron spin resonance(ESR) technique, we have studied the type, the density, the temperature dependence and the thermal dynamic behavior of defects in rf-reactively sputtered a-Ge1-xCx: H films. In the decomposition process of the ESR spectra, we found that the spectra have an asymmetrical component. Quantitative analysis of the component and the explanation of its origin are given.</p> <br/>Acta Physica Sinica. 1992 41(10): 1700-1705. Published 1992-05-05 SPIN DEFECT STATES IN HYDROGENATED AMORPHOUS GERMANIUM-CARBON FILMS CHEN GUANG-HUA, YU GONG, ZHANG FANG-QING, WU TIAN-XI 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1700-1705. article doi:10.7498/aps.41.1700 10.7498/aps.41.1700 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1700 1700-1705 <![CDATA[BACKWARD SCATTERING AND OPTICAL DIODE EFFECT IN Mn DOPED KNSBN CRYSTAL]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1706 Author(s): SHE WEI-LONG, WU QI, LI QING-XING, YU ZHEN-XIN, ZHANG QING-LUN, CHEN HUAN-CHU <br/><p>When a He-Ne laser beam (632.8 nm) with the power of milliwatts or submilliwatts penetrates through a Mn doped KNSBN crystal, a phenomenon of strong backward scattering is observed. At the same time, an optical diode effect which is associated with the backward scatering is also observed. In a certain range, the response time constant T of the optical diode effect is inversely propotional to the incident intensity on the surface of the crystal. The τ is decreased by one order of magnititude when a K9 glass plate which serves as a feedback mirror is introduced. A time constant of 1.5s and a ratio of the forward transmissivty to the backward one, which is greater than 15.3, have been obtained. A theoretical explanation is given on the basis of the experimental results</p> <br/>Acta Physica Sinica. 1992 41(10): 1706-1714. Published 1992-05-05 Author(s): SHE WEI-LONG, WU QI, LI QING-XING, YU ZHEN-XIN, ZHANG QING-LUN, CHEN HUAN-CHU <br/><p>When a He-Ne laser beam (632.8 nm) with the power of milliwatts or submilliwatts penetrates through a Mn doped KNSBN crystal, a phenomenon of strong backward scattering is observed. At the same time, an optical diode effect which is associated with the backward scatering is also observed. In a certain range, the response time constant T of the optical diode effect is inversely propotional to the incident intensity on the surface of the crystal. The τ is decreased by one order of magnititude when a K9 glass plate which serves as a feedback mirror is introduced. A time constant of 1.5s and a ratio of the forward transmissivty to the backward one, which is greater than 15.3, have been obtained. A theoretical explanation is given on the basis of the experimental results</p> <br/>Acta Physica Sinica. 1992 41(10): 1706-1714. Published 1992-05-05 BACKWARD SCATTERING AND OPTICAL DIODE EFFECT IN Mn DOPED KNSBN CRYSTAL SHE WEI-LONG, WU QI, LI QING-XING, YU ZHEN-XIN, ZHANG QING-LUN, CHEN HUAN-CHU 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1706-1714. article doi:10.7498/aps.41.1706 10.7498/aps.41.1706 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1706 1706-1714 <![CDATA[STATISTICAL ANALYSIS OF SIMULATION CALCULATION OF SPUTTERING FOR TWO INTERACTION POTENTIALS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1715 Author(s): SHAO QI-YUN <br/><p>This paper presents the effects of the interaction potentials(Moliére pntpntial and Universal potential) on computer simulation results of sputtering via Monte Carle simelation based on the binary collision approximation. By means of Wilcoxon two-Sample paired sign rank test, the statistically significant difference for the above results is ob tainad.</p> <br/>Acta Physica Sinica. 1992 41(10): 1715-1721. Published 1992-05-05 Author(s): SHAO QI-YUN <br/><p>This paper presents the effects of the interaction potentials(Moliére pntpntial and Universal potential) on computer simulation results of sputtering via Monte Carle simelation based on the binary collision approximation. By means of Wilcoxon two-Sample paired sign rank test, the statistically significant difference for the above results is ob tainad.</p> <br/>Acta Physica Sinica. 1992 41(10): 1715-1721. Published 1992-05-05 STATISTICAL ANALYSIS OF SIMULATION CALCULATION OF SPUTTERING FOR TWO INTERACTION POTENTIALS SHAO QI-YUN 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1715-1721. article doi:10.7498/aps.41.1715 10.7498/aps.41.1715 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1715 1715-1721 <![CDATA[EFFECT OF SURFACE LOCAL ENRICHMENT ON PREFEREN-TIAL SPUTTERIONG OF ALLOY]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1722 Author(s): WANG ZHEN-XIA, PAN JI-SHENG, ZHANG JI-PING, TAO ZHEN-LAN <br/><p>The angular distributions of atoms sputtered from Ni-50Wt%Ti, Fe-30Wt%W and Ag-50Wt%Cu alloys by 27keV Ar+ ions bombardment nave been masured. It has been found that Ti, Fe and Ag atoms were sputtered preferentially at small angles. The sputtered surfaces have been analyzed by SEM combined with EPMA. It has been showed that all the surface topographies of three samples consisted of two different parts i.e. convex and concave regions, corr responding dif ferent components being richer at different region. A model has been suggested to explan this phenomenon.</p> <br/>Acta Physica Sinica. 1992 41(10): 1722-1727. Published 1992-05-05 Author(s): WANG ZHEN-XIA, PAN JI-SHENG, ZHANG JI-PING, TAO ZHEN-LAN <br/><p>The angular distributions of atoms sputtered from Ni-50Wt%Ti, Fe-30Wt%W and Ag-50Wt%Cu alloys by 27keV Ar+ ions bombardment nave been masured. It has been found that Ti, Fe and Ag atoms were sputtered preferentially at small angles. The sputtered surfaces have been analyzed by SEM combined with EPMA. It has been showed that all the surface topographies of three samples consisted of two different parts i.e. convex and concave regions, corr responding dif ferent components being richer at different region. A model has been suggested to explan this phenomenon.</p> <br/>Acta Physica Sinica. 1992 41(10): 1722-1727. Published 1992-05-05 EFFECT OF SURFACE LOCAL ENRICHMENT ON PREFEREN-TIAL SPUTTERIONG OF ALLOY WANG ZHEN-XIA, PAN JI-SHENG, ZHANG JI-PING, TAO ZHEN-LAN 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1722-1727. article doi:10.7498/aps.41.1722 10.7498/aps.41.1722 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1722 1722-1727 <![CDATA[TEMPERATURE EFFECTS ON THE INTERACTION BETWEEN P AND GaAs(lOO) SURFACE]]> //www.getgobooth.com/en/article/doi/10.7498/aps.41.1728 Author(s): LU XUE-KUN, HAO PING-HAI, HE ZHONG-QING, HOU XIAO-YUAN, DING XUN-MIN <br/><p>Temperature effects on interaction between P and GaAs (100) surface have been studied by in-situ X-ray photoemssion, uhra violet photcemission, high resolution electron energy loss specrroscopy and low energy electron diffraction techniques. The results show that annealing will make most of the amorphous P, which are deposited on GaAs(lOO) surface at room temperature, desorb with some randomly distributed P-clusters left on the surface. In these clusters, some of the P atoms are bonded to the Ga atoms of the substrate, others exist in the form of element. Higher temperature annealing will make all the left P atoms interact with the substrate and form GaAsP thin layer. Film of GaAsP solid solution will be obtained when depositing P on high temperature GaAs substrate. This film is suggested to be a promissing passi-vating film for GaAs surface.</p> <br/>Acta Physica Sinica. 1992 41(10): 1728-1736. Published 1992-05-05 Author(s): LU XUE-KUN, HAO PING-HAI, HE ZHONG-QING, HOU XIAO-YUAN, DING XUN-MIN <br/><p>Temperature effects on interaction between P and GaAs (100) surface have been studied by in-situ X-ray photoemssion, uhra violet photcemission, high resolution electron energy loss specrroscopy and low energy electron diffraction techniques. The results show that annealing will make most of the amorphous P, which are deposited on GaAs(lOO) surface at room temperature, desorb with some randomly distributed P-clusters left on the surface. In these clusters, some of the P atoms are bonded to the Ga atoms of the substrate, others exist in the form of element. Higher temperature annealing will make all the left P atoms interact with the substrate and form GaAsP thin layer. Film of GaAsP solid solution will be obtained when depositing P on high temperature GaAs substrate. This film is suggested to be a promissing passi-vating film for GaAs surface.</p> <br/>Acta Physica Sinica. 1992 41(10): 1728-1736. Published 1992-05-05 TEMPERATURE EFFECTS ON THE INTERACTION BETWEEN P AND GaAs(lOO) SURFACE LU XUE-KUN, HAO PING-HAI, HE ZHONG-QING, HOU XIAO-YUAN, DING XUN-MIN 1992-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1992 41(10): 1728-1736. article doi:10.7498/aps.41.1728 10.7498/aps.41.1728 Acta Physica Sinica 41 10 1992-05-05 //www.getgobooth.com/en/article/doi/10.7498/aps.41.1728 1728-1736
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