Acta Physica Sinica //www.getgobooth.com/ 必威体育下载 daily 15 2024-08-20 10:33:37 apsoffice@iphy.ac.cn apsoffice@iphy.ac.cn 2024-08-20 10:33:37 zh Copyright ©Acta Physica Sinica All Rights Reserved. 京ICP备05002789号-1 Address: PostCode:100190 Phone: 010-82649829,82649241,82649863 Email: apsoffice@iphy.ac.cn Copyright ©Acta Physica Sinica All Rights Reserved apsoffice@iphy.ac.cn 1000-3290 <![CDATA[PHASE DIGRAM OF SPIN 1/2 XXZ CHAIN]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1697 Author(s): CHEN ZHI-JIAN, ZHANG YU-MEI, XU BO-WEI <br/><p>By mapping the spin 1/2 XXZ quantum chain to sine-Gordon model, we have analyzed the phase diagram of sine-Gordon model using tke method of gaussian wave functional and taking the large momentum cutoff. We have obtained the mas-sless region which agrees with the exact solution quite well.</p> <br/>Acta Physica Sinica. 1995 44(11): 1697-1702. Published 1995-11-20 Author(s): CHEN ZHI-JIAN, ZHANG YU-MEI, XU BO-WEI <br/><p>By mapping the spin 1/2 XXZ quantum chain to sine-Gordon model, we have analyzed the phase diagram of sine-Gordon model using tke method of gaussian wave functional and taking the large momentum cutoff. We have obtained the mas-sless region which agrees with the exact solution quite well.</p> <br/>Acta Physica Sinica. 1995 44(11): 1697-1702. Published 1995-11-20 PHASE DIGRAM OF SPIN 1/2 XXZ CHAIN CHEN ZHI-JIAN, ZHANG YU-MEI, XU BO-WEI 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1697-1702. article doi:10.7498/aps.44.1697 10.7498/aps.44.1697 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1697 1697-1702 <![CDATA[CALCULATION AND ANALYSIS OF THE ELECTRON-IMPACT IONIZATION CROSS SECTIONS FOR AI~(M+)]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1703 Author(s): FANG QUAN-YU, LI PING, CAI WEI, SHEN ZHI-JUN, XU YUAN-GUANG, ZHOU YU, CHEN GUO-XIN <br/><p>Electron-impact ionization cross sections for the 1s22s, 1s22p state of lithium-like aluminium are calculated by using distorted wave package, the inner-shell-exci-Cation-autoionization contribution is included in the final results. In this paper the electron-impact excitation cross sections and photoionization cross sections of the above two states are also given. It is shown that the ionization cross sections near threshold can joint smoothly with the corresponding excitation cross section and also meet the integrals of photoionization cross sections as the energy of the incidental electron become infinite.</p> <br/>Acta Physica Sinica. 1995 44(11): 1703-1711. Published 1995-11-20 Author(s): FANG QUAN-YU, LI PING, CAI WEI, SHEN ZHI-JUN, XU YUAN-GUANG, ZHOU YU, CHEN GUO-XIN <br/><p>Electron-impact ionization cross sections for the 1s22s, 1s22p state of lithium-like aluminium are calculated by using distorted wave package, the inner-shell-exci-Cation-autoionization contribution is included in the final results. In this paper the electron-impact excitation cross sections and photoionization cross sections of the above two states are also given. It is shown that the ionization cross sections near threshold can joint smoothly with the corresponding excitation cross section and also meet the integrals of photoionization cross sections as the energy of the incidental electron become infinite.</p> <br/>Acta Physica Sinica. 1995 44(11): 1703-1711. Published 1995-11-20 CALCULATION AND ANALYSIS OF THE ELECTRON-IMPACT IONIZATION CROSS SECTIONS FOR AI~(M+) FANG QUAN-YU, LI PING, CAI WEI, SHEN ZHI-JUN, XU YUAN-GUANG, ZHOU YU, CHEN GUO-XIN 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1703-1711. article doi:10.7498/aps.44.1703 10.7498/aps.44.1703 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1703 1703-1711 <![CDATA[RELATIVISTIC THEORETICAL STUDY ON DIELECTRONIC RECOMBINATION PROCESS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1712 Author(s): DONG CHEN-ZHONG, ZHOU YU, WANG JIAN-GUO, LI JIA-MING <br/><p>Dielectronic recombination may be regarded as a resonance radiative recombination process. In the process, an incident free electron with given kinetic energy collision with a ion A+q with charge +q, the free electron excited an bound electron of the ion A+q into nl state, and at the same time, itself be captured into another bound state nl, and a resonance doubly excited state will be formed. Furthermore, the state can be stable through radiative photons into some lower states. In this paper, we study the variation of Auger transition rates, radiative transition rates and dielectronic recombination rates with n in (1s1/2εp1/2)- (3s1/2np1/2)0- (n1 l1j1n2l2j2)1 recombination process using relativistic single configuration approximation method. From the method and program set up in this paper, any dielectronic recombination process for any ion can be calculated conveniently.</p> <br/>Acta Physica Sinica. 1995 44(11): 1712-1718. Published 1995-11-20 Author(s): DONG CHEN-ZHONG, ZHOU YU, WANG JIAN-GUO, LI JIA-MING <br/><p>Dielectronic recombination may be regarded as a resonance radiative recombination process. In the process, an incident free electron with given kinetic energy collision with a ion A+q with charge +q, the free electron excited an bound electron of the ion A+q into nl state, and at the same time, itself be captured into another bound state nl, and a resonance doubly excited state will be formed. Furthermore, the state can be stable through radiative photons into some lower states. In this paper, we study the variation of Auger transition rates, radiative transition rates and dielectronic recombination rates with n in (1s1/2εp1/2)- (3s1/2np1/2)0- (n1 l1j1n2l2j2)1 recombination process using relativistic single configuration approximation method. From the method and program set up in this paper, any dielectronic recombination process for any ion can be calculated conveniently.</p> <br/>Acta Physica Sinica. 1995 44(11): 1712-1718. Published 1995-11-20 RELATIVISTIC THEORETICAL STUDY ON DIELECTRONIC RECOMBINATION PROCESS DONG CHEN-ZHONG, ZHOU YU, WANG JIAN-GUO, LI JIA-MING 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1712-1718. article doi:10.7498/aps.44.1712 10.7498/aps.44.1712 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1712 1712-1718 <![CDATA[RELATIVISTIC EFFECT IN INELASTIC COLLISION OF ELECTRON WITH ATOM OR ION]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1719 Author(s): QU YI-ZHI, GONG XIAO-MIN, LI JIA-MING <br/><p>Based on relativistic Born approximation theory, we have calculated the relati-vistic and non-relativistic generalized oscillator strengthes (GOS) of the Li-liks iso-electron sequence. The difference between the two calculations shows the relativistic effect of both the target and impact electron in the inelastic collision process. For low Z target (e.g. Li), the relativistic effect is negligible. For the 2s?p transition of Au+76, the relativistic GOS is 27.1% smaller than the non-relativistic one. At high impact energy, the contribution of transverse term of GOS to the differential cross section is important at certain angle. At extremely high impact energy (e.g. 106, 107eV), the transverse term of GOS becomes dominant at forward small angle and such forward peak makes overwhelming contribution to the totalinelastic cross section.</p> <br/>Acta Physica Sinica. 1995 44(11): 1719-1726. Published 1995-11-20 Author(s): QU YI-ZHI, GONG XIAO-MIN, LI JIA-MING <br/><p>Based on relativistic Born approximation theory, we have calculated the relati-vistic and non-relativistic generalized oscillator strengthes (GOS) of the Li-liks iso-electron sequence. The difference between the two calculations shows the relativistic effect of both the target and impact electron in the inelastic collision process. For low Z target (e.g. Li), the relativistic effect is negligible. For the 2s?p transition of Au+76, the relativistic GOS is 27.1% smaller than the non-relativistic one. At high impact energy, the contribution of transverse term of GOS to the differential cross section is important at certain angle. At extremely high impact energy (e.g. 106, 107eV), the transverse term of GOS becomes dominant at forward small angle and such forward peak makes overwhelming contribution to the totalinelastic cross section.</p> <br/>Acta Physica Sinica. 1995 44(11): 1719-1726. Published 1995-11-20 RELATIVISTIC EFFECT IN INELASTIC COLLISION OF ELECTRON WITH ATOM OR ION QU YI-ZHI, GONG XIAO-MIN, LI JIA-MING 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1719-1726. article doi:10.7498/aps.44.1719 10.7498/aps.44.1719 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1719 1719-1726 <![CDATA[THEORETICAL STUDY ON ELECTRONIC STRUCTURE OF COBALT CLUSTERS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1727 Author(s): LI JUN, GONG XIAO-MIN, LI JIA-MING <br/><p>Based on multiple-scattering self-consistent-field method, we have investigated the electron structrue of Co. cluster (n= 3-13). Comparing the calculated ioniza-tion potentials for different geometries and electron configurations with the experimental values, we can study the appropriate electron configuration and geometric structure of Co.. From the occupation of local 3d valence electron in configuration, we found, generally speaking, that the average atomic magnetic moment of Co clusters decreases as the number of atoms increases. From the geometry of cobalt clusters, we also surmise the various formation of Co. cluster.</p> <br/>Acta Physica Sinica. 1995 44(11): 1727-1733. Published 1995-11-20 Author(s): LI JUN, GONG XIAO-MIN, LI JIA-MING <br/><p>Based on multiple-scattering self-consistent-field method, we have investigated the electron structrue of Co. cluster (n= 3-13). Comparing the calculated ioniza-tion potentials for different geometries and electron configurations with the experimental values, we can study the appropriate electron configuration and geometric structure of Co.. From the occupation of local 3d valence electron in configuration, we found, generally speaking, that the average atomic magnetic moment of Co clusters decreases as the number of atoms increases. From the geometry of cobalt clusters, we also surmise the various formation of Co. cluster.</p> <br/>Acta Physica Sinica. 1995 44(11): 1727-1733. Published 1995-11-20 THEORETICAL STUDY ON ELECTRONIC STRUCTURE OF COBALT CLUSTERS LI JUN, GONG XIAO-MIN, LI JIA-MING 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1727-1733. article doi:10.7498/aps.44.1727 10.7498/aps.44.1727 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1727 1727-1733 <![CDATA[A SELF-CONSISTENT KINETICS MODEL OF CuBr LASER WITH HYDROGEN ADDITIVES]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1734 Author(s): CHEN CHENG, SUN WEI <br/><p>A comprehensive and self-consistent kinetics model of CuBr laser with hydrogen additives is presented. The radial distribution and time variation of population of the laser levels, laser power, gas temperature, electron temperature and density are described systematically. The results are compared with the experimental measurement.</p> <br/>Acta Physica Sinica. 1995 44(11): 1734-1746. Published 1995-11-20 Author(s): CHEN CHENG, SUN WEI <br/><p>A comprehensive and self-consistent kinetics model of CuBr laser with hydrogen additives is presented. The radial distribution and time variation of population of the laser levels, laser power, gas temperature, electron temperature and density are described systematically. The results are compared with the experimental measurement.</p> <br/>Acta Physica Sinica. 1995 44(11): 1734-1746. Published 1995-11-20 A SELF-CONSISTENT KINETICS MODEL OF CuBr LASER WITH HYDROGEN ADDITIVES CHEN CHENG, SUN WEI 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1734-1746. article doi:10.7498/aps.44.1734 10.7498/aps.44.1734 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1734 1734-1746 <![CDATA[SINGLE-ELECTRON ANALYSIS OF THE SPACE-CHARGE WAVE IN FREE-ELECTRON LASERS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1747 Author(s): LI ZHI-KUAN <br/><p>In this paper, we analyse the effect of space-charge wave in free-electron lasers from the single-particle model theory. A iterative computing method is presented. The calculations have shown that the first step solution of the couples of three waves in free-electron lasers is in accordance with the result obtained; the second order solution shows a more complex structure of the space-sharge wave.</p> <br/>Acta Physica Sinica. 1995 44(11): 1747-1753. Published 1995-11-20 Author(s): LI ZHI-KUAN <br/><p>In this paper, we analyse the effect of space-charge wave in free-electron lasers from the single-particle model theory. A iterative computing method is presented. The calculations have shown that the first step solution of the couples of three waves in free-electron lasers is in accordance with the result obtained; the second order solution shows a more complex structure of the space-sharge wave.</p> <br/>Acta Physica Sinica. 1995 44(11): 1747-1753. Published 1995-11-20 SINGLE-ELECTRON ANALYSIS OF THE SPACE-CHARGE WAVE IN FREE-ELECTRON LASERS LI ZHI-KUAN 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1747-1753. article doi:10.7498/aps.44.1747 10.7498/aps.44.1747 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1747 1747-1753 <![CDATA[MEASUREMENT OF NONLINEAR REFRACTIVE INDEX WITH Z-SCAN METHOD FOR SLOW DECAY MATERIALS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1754 Author(s): YANG QI-GUANG, FEI HAO-SHENG, WEI ZHEN-QIAN <br/><p>The measurement of nonlinear refractive index with Z-scan method for slow decay materials are discussed in detail. We derive the resultant electric field pattern at the aperture. It is pointed out that the accumulating effect contribute largely to the Z-scan signal in the slow decay nonlinear optical materials. The theoretical analysis is consistent with experimental result.</p> <br/>Acta Physica Sinica. 1995 44(11): 1754-1760. Published 1995-11-20 Author(s): YANG QI-GUANG, FEI HAO-SHENG, WEI ZHEN-QIAN <br/><p>The measurement of nonlinear refractive index with Z-scan method for slow decay materials are discussed in detail. We derive the resultant electric field pattern at the aperture. It is pointed out that the accumulating effect contribute largely to the Z-scan signal in the slow decay nonlinear optical materials. The theoretical analysis is consistent with experimental result.</p> <br/>Acta Physica Sinica. 1995 44(11): 1754-1760. Published 1995-11-20 MEASUREMENT OF NONLINEAR REFRACTIVE INDEX WITH Z-SCAN METHOD FOR SLOW DECAY MATERIALS YANG QI-GUANG, FEI HAO-SHENG, WEI ZHEN-QIAN 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1754-1760. article doi:10.7498/aps.44.1754 10.7498/aps.44.1754 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1754 1754-1760 <![CDATA[INTENSITY DEPENDENT PICOSECOND LIGHT PULSE SHAPING IN PHOTOREFRACTIVE CRYSTAL BY TWO WAVE COUPLING]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1761 Author(s): YU WEI-LONG, HE HUI-RONG, WANG HE-ZHOU, YU ZHEN-XIN, MO DANG <br/><p>Pulse shaping by two wave coupling in Ce doped KNSBN crystal is realized with a frequency-doubled CW modelocked Nd:YAG laser whose output pulsewidth is about 55ps. When the total incident intensity is higher than 10W/cm2, the shaping effect becomes more and more prominent with increasing incident intensity. The experimental results show good quantitative agreement with theory.</p> <br/>Acta Physica Sinica. 1995 44(11): 1761-1765. Published 1995-11-20 Author(s): YU WEI-LONG, HE HUI-RONG, WANG HE-ZHOU, YU ZHEN-XIN, MO DANG <br/><p>Pulse shaping by two wave coupling in Ce doped KNSBN crystal is realized with a frequency-doubled CW modelocked Nd:YAG laser whose output pulsewidth is about 55ps. When the total incident intensity is higher than 10W/cm2, the shaping effect becomes more and more prominent with increasing incident intensity. The experimental results show good quantitative agreement with theory.</p> <br/>Acta Physica Sinica. 1995 44(11): 1761-1765. Published 1995-11-20 INTENSITY DEPENDENT PICOSECOND LIGHT PULSE SHAPING IN PHOTOREFRACTIVE CRYSTAL BY TWO WAVE COUPLING YU WEI-LONG, HE HUI-RONG, WANG HE-ZHOU, YU ZHEN-XIN, MO DANG 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1761-1765. article doi:10.7498/aps.44.1761 10.7498/aps.44.1761 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1761 1761-1765 <![CDATA[INVESTIGATION ON NON-EQUILIBRIUM X-RAY EMISSION SPECTRA FROM LASER PRODUCED PLASMAS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1766 Author(s): PEI WEN-BING, CHANG TIE-QIANG, ZHANG JUN <br/><p>A statistical method for the ion configuration probability distribution in non-LTE plasmas based on the average-ion model is described. In this method, the ion configuration probabilities are obtained from the average level population probabilities of the ions according to the binomial distribution. The non-equilibrium ion configuration distribution and X-ray spectra emitted from Au plasmas produced by 1.06 μm laser are studied. The calculated X-ray emission spectra are in the same energy band range as the experimental results. We discuss the non-equilibrium characteristics of X-ray emission, and show that the contributions of the multiply excited ions to X-ray emission are important.</p> <br/>Acta Physica Sinica. 1995 44(11): 1766-1775. Published 1995-11-20 Author(s): PEI WEN-BING, CHANG TIE-QIANG, ZHANG JUN <br/><p>A statistical method for the ion configuration probability distribution in non-LTE plasmas based on the average-ion model is described. In this method, the ion configuration probabilities are obtained from the average level population probabilities of the ions according to the binomial distribution. The non-equilibrium ion configuration distribution and X-ray spectra emitted from Au plasmas produced by 1.06 μm laser are studied. The calculated X-ray emission spectra are in the same energy band range as the experimental results. We discuss the non-equilibrium characteristics of X-ray emission, and show that the contributions of the multiply excited ions to X-ray emission are important.</p> <br/>Acta Physica Sinica. 1995 44(11): 1766-1775. Published 1995-11-20 INVESTIGATION ON NON-EQUILIBRIUM X-RAY EMISSION SPECTRA FROM LASER PRODUCED PLASMAS PEI WEN-BING, CHANG TIE-QIANG, ZHANG JUN 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1766-1775. article doi:10.7498/aps.44.1766 10.7498/aps.44.1766 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1766 1766-1775 <![CDATA[RELATIVISTICALLY STOCHASTIC ACCELERATION OF ELECTRONS IN PLASMA DRIVEN BY A STANDING WAVE]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1776 Author(s): ZHOU XIAO-BING, WANG ZHI-JUN, SHENG GUANG-ZHAO <br/><p>The possibility and conditions of stochastic acceleration of an electron in plasma by a standing wave is discussed and numerically calculated. The analytical results show that the stochasticity of the motion of the electron is due to overlap of the two resonances imbedded in the interaction between the electron and the standing wave. The threshold of stochastic acceleration is evaluated analytically and numerically. The energy of stochastic acceleration of the electron is also calculated numerically with the trajectories of the electron being traced by using Poincare's surface-of-sectiun plot technique.</p> <br/>Acta Physica Sinica. 1995 44(11): 1776-1782. Published 1995-11-20 Author(s): ZHOU XIAO-BING, WANG ZHI-JUN, SHENG GUANG-ZHAO <br/><p>The possibility and conditions of stochastic acceleration of an electron in plasma by a standing wave is discussed and numerically calculated. The analytical results show that the stochasticity of the motion of the electron is due to overlap of the two resonances imbedded in the interaction between the electron and the standing wave. The threshold of stochastic acceleration is evaluated analytically and numerically. The energy of stochastic acceleration of the electron is also calculated numerically with the trajectories of the electron being traced by using Poincare's surface-of-sectiun plot technique.</p> <br/>Acta Physica Sinica. 1995 44(11): 1776-1782. Published 1995-11-20 RELATIVISTICALLY STOCHASTIC ACCELERATION OF ELECTRONS IN PLASMA DRIVEN BY A STANDING WAVE ZHOU XIAO-BING, WANG ZHI-JUN, SHENG GUANG-ZHAO 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1776-1782. article doi:10.7498/aps.44.1776 10.7498/aps.44.1776 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1776 1776-1782 <![CDATA[DIAGNOSTICS OF ELECTRON DENSITY OF LASER-PRODU-CED PLASMA FROM THE XUV SPECTRA OF AgXIX]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1783 Author(s): WANG WEN-ZHONG, ZHANG TAN-XIN, HE ZHAO-TANG, GU YU-QIU, LONG YONG-LU, JIANG WEN-MIAN <br/><p>The XUV spectra from AgXIX of laser-produced plasma are measured. The density dependence of △n= 0 (4-4) transitions from AgXIX has been studied in a density range 1017-1022 cm-3 with the collisional radiative model. The theoretical model included the effect of cascading from n= 5 states on the population of the n =4 levels. In addition, optical depth effects on the line intensities were considered. The two transitions of 4d2D5/2 4f2F7/2 and 4p2P3/2-4d2D5/2 remain close to each other and are unblended with other lines. Calculations of their radiation intensity ratio vs the electron density are performed. Electron density of laserproduced plasma has been deduced from the ratio.</p> <br/>Acta Physica Sinica. 1995 44(11): 1783-1787. Published 1995-11-20 Author(s): WANG WEN-ZHONG, ZHANG TAN-XIN, HE ZHAO-TANG, GU YU-QIU, LONG YONG-LU, JIANG WEN-MIAN <br/><p>The XUV spectra from AgXIX of laser-produced plasma are measured. The density dependence of △n= 0 (4-4) transitions from AgXIX has been studied in a density range 1017-1022 cm-3 with the collisional radiative model. The theoretical model included the effect of cascading from n= 5 states on the population of the n =4 levels. In addition, optical depth effects on the line intensities were considered. The two transitions of 4d2D5/2 4f2F7/2 and 4p2P3/2-4d2D5/2 remain close to each other and are unblended with other lines. Calculations of their radiation intensity ratio vs the electron density are performed. Electron density of laserproduced plasma has been deduced from the ratio.</p> <br/>Acta Physica Sinica. 1995 44(11): 1783-1787. Published 1995-11-20 DIAGNOSTICS OF ELECTRON DENSITY OF LASER-PRODU-CED PLASMA FROM THE XUV SPECTRA OF AgXIX WANG WEN-ZHONG, ZHANG TAN-XIN, HE ZHAO-TANG, GU YU-QIU, LONG YONG-LU, JIANG WEN-MIAN 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1783-1787. article doi:10.7498/aps.44.1783 10.7498/aps.44.1783 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1783 1783-1787 <![CDATA[X-RAY DIFFRACTION PHASE DEPTH PROFILING FOR POLYCRYSTAL WITH CONTINUOUS PHASE DEPTH DISTRIBUTION]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1788 Author(s): LUO JIAN, YAN HONG, TAO KUN <br/><p>A new X-ray powder diffraction method is reported to test phase depth distribution quantitatively and non-destructively. In case of the incident angle is larger than the total reflection critical angle, it is possible to quantitatively measure the polycrystalline phase depth profile in real scale. It can be used to the sample of continuous phase depth distribution. The method was verified with computer simulation and experiment of practical sample.</p> <br/>Acta Physica Sinica. 1995 44(11): 1788-1792. Published 1995-11-20 Author(s): LUO JIAN, YAN HONG, TAO KUN <br/><p>A new X-ray powder diffraction method is reported to test phase depth distribution quantitatively and non-destructively. In case of the incident angle is larger than the total reflection critical angle, it is possible to quantitatively measure the polycrystalline phase depth profile in real scale. It can be used to the sample of continuous phase depth distribution. The method was verified with computer simulation and experiment of practical sample.</p> <br/>Acta Physica Sinica. 1995 44(11): 1788-1792. Published 1995-11-20 X-RAY DIFFRACTION PHASE DEPTH PROFILING FOR POLYCRYSTAL WITH CONTINUOUS PHASE DEPTH DISTRIBUTION LUO JIAN, YAN HONG, TAO KUN 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1788-1792. article doi:10.7498/aps.44.1788 10.7498/aps.44.1788 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1788 1788-1792 <![CDATA[COMPUTER DEPTH PROFILING ANALYSIS METHOD FOR X-RAY DIFFRACTION POLYCRYSTALLINE PATTERNS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1793 Author(s): LUO JIAN, TAO KUN <br/><p>A new method to extract X-ray polycrystalline diffraction patterns diffracted from different depth in real scale is pnesented. In this method the X-ray polycrystalline diffraction data of surface layer are collected at different incident angles, and then the X-ray diffraction patters diffracted from thin sheets at different depth are extracted directly by some special mathematical method. So the depth profiles of peak intensity, peak position and line profile can be obtained quantitatively and nondestrnctively. The algorithm was deduced in theory, and the feasibility of this method was primarily tested with a Ni/Mo film sample with prefered orientation. This method has the prospective application in the area of the thin films and its reactions, interface and surface processing studies.</p> <br/>Acta Physica Sinica. 1995 44(11): 1793-1797. Published 1995-11-20 Author(s): LUO JIAN, TAO KUN <br/><p>A new method to extract X-ray polycrystalline diffraction patterns diffracted from different depth in real scale is pnesented. In this method the X-ray polycrystalline diffraction data of surface layer are collected at different incident angles, and then the X-ray diffraction patters diffracted from thin sheets at different depth are extracted directly by some special mathematical method. So the depth profiles of peak intensity, peak position and line profile can be obtained quantitatively and nondestrnctively. The algorithm was deduced in theory, and the feasibility of this method was primarily tested with a Ni/Mo film sample with prefered orientation. This method has the prospective application in the area of the thin films and its reactions, interface and surface processing studies.</p> <br/>Acta Physica Sinica. 1995 44(11): 1793-1797. Published 1995-11-20 COMPUTER DEPTH PROFILING ANALYSIS METHOD FOR X-RAY DIFFRACTION POLYCRYSTALLINE PATTERNS LUO JIAN, TAO KUN 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1793-1797. article doi:10.7498/aps.44.1793 10.7498/aps.44.1793 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1793 1793-1797 <![CDATA[QUANTUM CHEMISTRY CALCULATIONS ON THE LATTICE INSTABILITIES OF HEXAHALOMET- ALLATES]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1798 Author(s): ZHANG JIA-MING, LU WEI, SHEN XUE-CHU <br/><p>The calculation method of quantum chemistry has been extended to describe the lattice instabilities and the nature of the lattice instabilities of hexahalometallates. Some interesting calculation results have been obtained and compared with the exper-imental results obtained by Raman and Brillouin scattering.</p> <br/>Acta Physica Sinica. 1995 44(11): 1798-1804. Published 1995-11-20 Author(s): ZHANG JIA-MING, LU WEI, SHEN XUE-CHU <br/><p>The calculation method of quantum chemistry has been extended to describe the lattice instabilities and the nature of the lattice instabilities of hexahalometallates. Some interesting calculation results have been obtained and compared with the exper-imental results obtained by Raman and Brillouin scattering.</p> <br/>Acta Physica Sinica. 1995 44(11): 1798-1804. Published 1995-11-20 QUANTUM CHEMISTRY CALCULATIONS ON THE LATTICE INSTABILITIES OF HEXAHALOMET- ALLATES ZHANG JIA-MING, LU WEI, SHEN XUE-CHU 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1798-1804. article doi:10.7498/aps.44.1798 10.7498/aps.44.1798 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1798 1798-1804 <![CDATA[H2 DISSOCIATIVE ADSORPTION ON SURFACES OF Ni, Pd and Cu]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1805 Author(s): SUN QIANG, XIE JIAN-JUN, ZHANG TAO <br/><p>The dissociative adsorption of hydrogen molecule on (100), (110) and (111) surfaces of Ni, Pd and Cu are investigated using the embeded-atom method (EAM). First, the EAM potentials for H-metal surfaces are obtained by fitting the adsorption energies and the length of adsorption bond for single H atom on different surfaces of Ni, Pd and Cu. Then, the activation barriers Ea, adsorption heat q2d and corresponding H-metal bond length R for dissociation of H2 through various pathways are calculated. The potential energy contours for H2 dissociation on (110) surfaces of different metals are presented. The calculated results show that the dissociative adsorption of a hydrogen molecule depend on the species of substrate, the surface orientation and the dissociative pathways. The activation barrier for H2 dissociation on Nisurface is very low, while it is higher for H2 dissociation on Cu surface. The dissociative adsorption of H2 is easier on open (110) surface than that on close-packed(111) surfaces. Among the discussed dissociation pathways, it appears that the most favourable pathway for H2 is that from bridge site to the adjacent centre sites.</p> <br/>Acta Physica Sinica. 1995 44(11): 1805-1813. Published 1995-11-20 Author(s): SUN QIANG, XIE JIAN-JUN, ZHANG TAO <br/><p>The dissociative adsorption of hydrogen molecule on (100), (110) and (111) surfaces of Ni, Pd and Cu are investigated using the embeded-atom method (EAM). First, the EAM potentials for H-metal surfaces are obtained by fitting the adsorption energies and the length of adsorption bond for single H atom on different surfaces of Ni, Pd and Cu. Then, the activation barriers Ea, adsorption heat q2d and corresponding H-metal bond length R for dissociation of H2 through various pathways are calculated. The potential energy contours for H2 dissociation on (110) surfaces of different metals are presented. The calculated results show that the dissociative adsorption of a hydrogen molecule depend on the species of substrate, the surface orientation and the dissociative pathways. The activation barrier for H2 dissociation on Nisurface is very low, while it is higher for H2 dissociation on Cu surface. The dissociative adsorption of H2 is easier on open (110) surface than that on close-packed(111) surfaces. Among the discussed dissociation pathways, it appears that the most favourable pathway for H2 is that from bridge site to the adjacent centre sites.</p> <br/>Acta Physica Sinica. 1995 44(11): 1805-1813. Published 1995-11-20 H2 DISSOCIATIVE ADSORPTION ON SURFACES OF Ni, Pd and Cu SUN QIANG, XIE JIAN-JUN, ZHANG TAO 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1805-1813. article doi:10.7498/aps.44.1805 10.7498/aps.44.1805 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1805 1805-1813 <![CDATA[INVESTIGATION OF ELECTRON PARAMAGNETIC RESONANCE PARAMETERS AND LATTICE IMPURITY IN Na_2ZnCl_4·3H_2O:Mn~(2+)]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1814 Author(s): WANG JUN-ZHONG, ZHANG YONG-ZHAO, ZHANG SHU-YAN, YANG ZI-YUAN, YU WAN-LUN <br/><p>In present paper, we proposed a new assumption that the O2- ion replaced the Cl- ion on the trigonal axis. On this basis, the EPR parameters D, a and gn were calculated. The results agree well with the experiments. The effects of uniaxial stress dD/dp and da/dp were also explained. This indicated that the assumption is reasonable.</p> <br/>Acta Physica Sinica. 1995 44(11): 1814-1818. Published 1995-11-20 Author(s): WANG JUN-ZHONG, ZHANG YONG-ZHAO, ZHANG SHU-YAN, YANG ZI-YUAN, YU WAN-LUN <br/><p>In present paper, we proposed a new assumption that the O2- ion replaced the Cl- ion on the trigonal axis. On this basis, the EPR parameters D, a and gn were calculated. The results agree well with the experiments. The effects of uniaxial stress dD/dp and da/dp were also explained. This indicated that the assumption is reasonable.</p> <br/>Acta Physica Sinica. 1995 44(11): 1814-1818. Published 1995-11-20 INVESTIGATION OF ELECTRON PARAMAGNETIC RESONANCE PARAMETERS AND LATTICE IMPURITY IN Na_2ZnCl_4·3H_2O:Mn~(2+) WANG JUN-ZHONG, ZHANG YONG-ZHAO, ZHANG SHU-YAN, YANG ZI-YUAN, YU WAN-LUN 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1814-1818. article doi:10.7498/aps.44.1814 10.7498/aps.44.1814 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1814 1814-1818 <![CDATA[LOCALIZATION OF ELECTRONS IN Bi_2Sr_2CuO_y CRYSTALS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1819 Author(s): WANG JU-LIN, DENG MING, YUAN KE-QING, ZHONG YAN, PAN GUO-QIANG, CAO LIE-ZHAO <br/><p>The ab-plane resistivity of Bi2Sr2CuO, crystals as a function of temperature has been measured. In the process of metal-insulator transition, the crystals at low temperature exhibit the two-dimensional weak localization behavior at first, and cross over to the variable-range-hopping conduction of the strong localization regime gradually. Discussions on the nature of the metal-insulator transition are presented based on the experimental results.</p> <br/>Acta Physica Sinica. 1995 44(11): 1819-1824. Published 1995-11-20 Author(s): WANG JU-LIN, DENG MING, YUAN KE-QING, ZHONG YAN, PAN GUO-QIANG, CAO LIE-ZHAO <br/><p>The ab-plane resistivity of Bi2Sr2CuO, crystals as a function of temperature has been measured. In the process of metal-insulator transition, the crystals at low temperature exhibit the two-dimensional weak localization behavior at first, and cross over to the variable-range-hopping conduction of the strong localization regime gradually. Discussions on the nature of the metal-insulator transition are presented based on the experimental results.</p> <br/>Acta Physica Sinica. 1995 44(11): 1819-1824. Published 1995-11-20 LOCALIZATION OF ELECTRONS IN Bi_2Sr_2CuO_y CRYSTALS WANG JU-LIN, DENG MING, YUAN KE-QING, ZHONG YAN, PAN GUO-QIANG, CAO LIE-ZHAO 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1819-1824. article doi:10.7498/aps.44.1819 10.7498/aps.44.1819 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1819 1819-1824 <![CDATA[PEAK ENERGY FOCUSING OF PHOTOLUMINESCENCE FROM POROUS SILICON DURING STORING IN AIR OR 200℃ THERMAL OXIDATION]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1825 Author(s): ZHANG BAI-XIN, ZHANG LI-ZHU, SONG HAI-ZHI, YAO GUANG-QING, DUAN JIA-DI, TAO GUO-QIANG <br/><p>Porous silicon (PS) samples with photoluminescence (PL) peak energies in the range of 1.4 to 2.0 eV were obtained by varing anodization conditions. 45 pieces of PS sample were stored in air for one year, and 102 pieces of PS sample were thermally oxidized at 200℃for 200 hours. After these two kinds of oxidation processes, PL peak energies of all PS samples focused to around 1.70-1.75eV. Supposing that luminescence centers with luminescence energies around 1.70-1.75eV exist in SiOx(x - 2) layers covering nanoscale silicon in fully oxidized PS, reported can be explained by the quantum confinement/luminescence centers model.</p> <br/>Acta Physica Sinica. 1995 44(11): 1825-1830. Published 1995-11-20 Author(s): ZHANG BAI-XIN, ZHANG LI-ZHU, SONG HAI-ZHI, YAO GUANG-QING, DUAN JIA-DI, TAO GUO-QIANG <br/><p>Porous silicon (PS) samples with photoluminescence (PL) peak energies in the range of 1.4 to 2.0 eV were obtained by varing anodization conditions. 45 pieces of PS sample were stored in air for one year, and 102 pieces of PS sample were thermally oxidized at 200℃for 200 hours. After these two kinds of oxidation processes, PL peak energies of all PS samples focused to around 1.70-1.75eV. Supposing that luminescence centers with luminescence energies around 1.70-1.75eV exist in SiOx(x - 2) layers covering nanoscale silicon in fully oxidized PS, reported can be explained by the quantum confinement/luminescence centers model.</p> <br/>Acta Physica Sinica. 1995 44(11): 1825-1830. Published 1995-11-20 PEAK ENERGY FOCUSING OF PHOTOLUMINESCENCE FROM POROUS SILICON DURING STORING IN AIR OR 200℃ THERMAL OXIDATION ZHANG BAI-XIN, ZHANG LI-ZHU, SONG HAI-ZHI, YAO GUANG-QING, DUAN JIA-DI, TAO GUO-QIANG 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1825-1830. article doi:10.7498/aps.44.1825 10.7498/aps.44.1825 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1825 1825-1830 <![CDATA[DIFFERENT INTERDIFFUSION CHARACTERISTICS BETWEEN Ag AND Al/YBa_2Cu_3O_(7-x) CONTACT INTERFACE]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1831 Author(s): KANG JIN-FENG, CHEN XIN, WANG YOU-XIANG, HAN RU-QI, XIONG GUANG-CHENG, LIAN GUI-JUN, LI JIE, WU SI-CHENG <br/><p>Different interdiffusion characteristics between the Ag/YBCO and Al/YBCO contact interfaces have been revealed by SIMS studies. The different electrical properties of Ag/YBCO and Al/YBCO interfaces after high temperature treatment are well understood by SIMS results.</p> <br/>Acta Physica Sinica. 1995 44(11): 1831-1838. Published 1995-11-20 Author(s): KANG JIN-FENG, CHEN XIN, WANG YOU-XIANG, HAN RU-QI, XIONG GUANG-CHENG, LIAN GUI-JUN, LI JIE, WU SI-CHENG <br/><p>Different interdiffusion characteristics between the Ag/YBCO and Al/YBCO contact interfaces have been revealed by SIMS studies. The different electrical properties of Ag/YBCO and Al/YBCO interfaces after high temperature treatment are well understood by SIMS results.</p> <br/>Acta Physica Sinica. 1995 44(11): 1831-1838. Published 1995-11-20 DIFFERENT INTERDIFFUSION CHARACTERISTICS BETWEEN Ag AND Al/YBa_2Cu_3O_(7-x) CONTACT INTERFACE KANG JIN-FENG, CHEN XIN, WANG YOU-XIANG, HAN RU-QI, XIONG GUANG-CHENG, LIAN GUI-JUN, LI JIE, WU SI-CHENG 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1831-1838. article doi:10.7498/aps.44.1831 10.7498/aps.44.1831 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1831 1831-1838 <![CDATA[A LOOP-CLUSTER UPATING MONTE CARLO STUDY FOR THE TWO-DIMENSIONAL QHAF ON THE HEXAGONAL LATTICES]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1839 Author(s): YIN HE-PING, JI DA-REN, WANG ZHI-GANG <br/><p>A new type of cluster algorithm is developed to simulate the two-dimensional spin one half quantum Heisenberg antiferromagnet (QHAF) on a hexagonal lattice. The numerical results show that the method can be applied to study efficiently the QHAF systems at lowertemperatures, with large Trotter number, on the general bipartite lattices.</p> <br/>Acta Physica Sinica. 1995 44(11): 1839-1846. Published 1995-11-20 Author(s): YIN HE-PING, JI DA-REN, WANG ZHI-GANG <br/><p>A new type of cluster algorithm is developed to simulate the two-dimensional spin one half quantum Heisenberg antiferromagnet (QHAF) on a hexagonal lattice. The numerical results show that the method can be applied to study efficiently the QHAF systems at lowertemperatures, with large Trotter number, on the general bipartite lattices.</p> <br/>Acta Physica Sinica. 1995 44(11): 1839-1846. Published 1995-11-20 A LOOP-CLUSTER UPATING MONTE CARLO STUDY FOR THE TWO-DIMENSIONAL QHAF ON THE HEXAGONAL LATTICES YIN HE-PING, JI DA-REN, WANG ZHI-GANG 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1839-1846. article doi:10.7498/aps.44.1839 10.7498/aps.44.1839 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1839 1839-1846 <![CDATA[STUDY OF THE EXCITATION OF A ROTARY ECHO PULSE SEQUENCE IN SOLID-STATE NMR SPECTROSCOPY]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1847 Author(s): LI GEN-YING, XU XUE-CHENG <br/><p>perimental parameters is proposed in the present article. That the superiority of the suggested pulse sequence over the conventional two 90?echo sequence is confirmed by theoretical calculation and experimental results.</p> <br/>Acta Physica Sinica. 1995 44(11): 1847-1852. Published 1995-11-20 Author(s): LI GEN-YING, XU XUE-CHENG <br/><p>perimental parameters is proposed in the present article. That the superiority of the suggested pulse sequence over the conventional two 90?echo sequence is confirmed by theoretical calculation and experimental results.</p> <br/>Acta Physica Sinica. 1995 44(11): 1847-1852. Published 1995-11-20 STUDY OF THE EXCITATION OF A ROTARY ECHO PULSE SEQUENCE IN SOLID-STATE NMR SPECTROSCOPY LI GEN-YING, XU XUE-CHENG 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1847-1852. article doi:10.7498/aps.44.1847 10.7498/aps.44.1847 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1847 1847-1852 <![CDATA[MEASUREMENT OF THE MASS ATTENUATION COEFFICIENTS FOR SiH4 ANDSi]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1853 Author(s): WANG DA-CUN, LUO PING-AN, YANG HUA, WANG ZHI-DONG <br/><p>With X-rays produced by protons exciting elemental and compound targets the mass attenuation coefficients have been systematicaJly measured for SiH4 in the range of X-ray energy 1.486-15.165keV, for Si in 8.041-29.109keV. Not only the validity of Bragg's additivity law in the gaseous compound was verifed by experiment, but also the mass attenuation coefficients of Si in the energy range 1.4-6 keV were obtained. The photoelectric cross sections have been obtained by subtracting thermal diffuse scattering and Compton scattering cross section from the measured total cross sections and compared with the theoretical results.</p> <br/>Acta Physica Sinica. 1995 44(11): 1853-1860. Published 1995-11-20 Author(s): WANG DA-CUN, LUO PING-AN, YANG HUA, WANG ZHI-DONG <br/><p>With X-rays produced by protons exciting elemental and compound targets the mass attenuation coefficients have been systematicaJly measured for SiH4 in the range of X-ray energy 1.486-15.165keV, for Si in 8.041-29.109keV. Not only the validity of Bragg's additivity law in the gaseous compound was verifed by experiment, but also the mass attenuation coefficients of Si in the energy range 1.4-6 keV were obtained. The photoelectric cross sections have been obtained by subtracting thermal diffuse scattering and Compton scattering cross section from the measured total cross sections and compared with the theoretical results.</p> <br/>Acta Physica Sinica. 1995 44(11): 1853-1860. Published 1995-11-20 MEASUREMENT OF THE MASS ATTENUATION COEFFICIENTS FOR SiH4 ANDSi WANG DA-CUN, LUO PING-AN, YANG HUA, WANG ZHI-DONG 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1853-1860. article doi:10.7498/aps.44.1853 10.7498/aps.44.1853 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1853 1853-1860 <![CDATA[GROWTH OF METASTABLE fcc Mn THIN FILM ON GaAs(00l) AND ITS ELECTRONIC STRUCTURE STUDIED BY PHOTOEMISSION WITH SYNCHROTRON RADIATION]]> //www.getgobooth.com/en/article/doi/10.7498/aps.44.1861 Author(s): CHEN YAN, DONG GUO-SHEN, ZHANG MING, XU MIN, JIN XIAO-FENG, LU ER-DONG, PAN HAI-BING, XU PENG-SHOU, ZHANG XIN-YI, FAN CHAO-YANG <br/><p>The epitaxial growth of metastable fcc Mn thin films on GaAs(001) surface has been achieved at a substrate temperature of 400K. The development of the fcc Mn thin films as a function of coverage is studied by photoemission with synchrotron radiation. The electron density of states below the Fermi edge of the fcc Mn phase is measured A significant difference of the electronic structures is observed between the metastable fcc Mn phase and the thermodynamically stable α-Mn phase. Possible mechanisms are proposed to interprete the experimental result.</p> <br/>Acta Physica Sinica. 1995 44(11): 1861-1868. Published 1995-11-20 Author(s): CHEN YAN, DONG GUO-SHEN, ZHANG MING, XU MIN, JIN XIAO-FENG, LU ER-DONG, PAN HAI-BING, XU PENG-SHOU, ZHANG XIN-YI, FAN CHAO-YANG <br/><p>The epitaxial growth of metastable fcc Mn thin films on GaAs(001) surface has been achieved at a substrate temperature of 400K. The development of the fcc Mn thin films as a function of coverage is studied by photoemission with synchrotron radiation. The electron density of states below the Fermi edge of the fcc Mn phase is measured A significant difference of the electronic structures is observed between the metastable fcc Mn phase and the thermodynamically stable α-Mn phase. Possible mechanisms are proposed to interprete the experimental result.</p> <br/>Acta Physica Sinica. 1995 44(11): 1861-1868. Published 1995-11-20 GROWTH OF METASTABLE fcc Mn THIN FILM ON GaAs(00l) AND ITS ELECTRONIC STRUCTURE STUDIED BY PHOTOEMISSION WITH SYNCHROTRON RADIATION CHEN YAN, DONG GUO-SHEN, ZHANG MING, XU MIN, JIN XIAO-FENG, LU ER-DONG, PAN HAI-BING, XU PENG-SHOU, ZHANG XIN-YI, FAN CHAO-YANG 1995-11-20 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1995 44(11): 1861-1868. article doi:10.7498/aps.44.1861 10.7498/aps.44.1861 Acta Physica Sinica 44 11 1995-11-20 //www.getgobooth.com/en/article/doi/10.7498/aps.44.1861 1861-1868
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