Acta Physica Sinica
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1000-3290
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.529
Author(s): LI MI, ZHANG ZHI-GUANG <br/><p>In this paper a Mbius inversion transform formula is proposed and proved for a crystal with hcp structure.By the use of the formula the pair potential can be converted from the cohesive energy.As an example,the pair potential in magnesium is calculated and discussed.</p> <br/>Acta Physica Sinica. 1998 47(4): 529-535. Published 1998-02-05
Author(s): LI MI, ZHANG ZHI-GUANG <br/><p>In this paper a Mbius inversion transform formula is proposed and proved for a crystal with hcp structure.By the use of the formula the pair potential can be converted from the cohesive energy.As an example,the pair potential in magnesium is calculated and discussed.</p> <br/>Acta Physica Sinica. 1998 47(4): 529-535. Published 1998-02-05
THE M?BIUS INVERSION TRANSFORM FOR HCP STRUCTURE AND THE PAIR POTENTIAL IN MAGNESIUM
LI MI, ZHANG ZHI-GUANG
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 529-535.
article
doi:10.7498/aps.47.529
10.7498/aps.47.529
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.529
529-535
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.536
Author(s): CHEN CHANG-YUAN, LIU YOU-WEN <br/><p>In this paper,the Schrdinger equation with an anharmonic oscillator potential V(x)=x2/2+g/2x2 is solved.The exact energy equation and the normalized wave function are obtained.The double-wave function quantum theory is applied to gain the time evolution equation to describe the physical quantities of a single motional particle in the anharmonic oscillator.</p> <br/>Acta Physica Sinica. 1998 47(4): 536-541. Published 1998-02-05
Author(s): CHEN CHANG-YUAN, LIU YOU-WEN <br/><p>In this paper,the Schrdinger equation with an anharmonic oscillator potential V(x)=x2/2+g/2x2 is solved.The exact energy equation and the normalized wave function are obtained.The double-wave function quantum theory is applied to gain the time evolution equation to describe the physical quantities of a single motional particle in the anharmonic oscillator.</p> <br/>Acta Physica Sinica. 1998 47(4): 536-541. Published 1998-02-05
THE EXACT SOLUTION OF ANHARMONIC OSCILLATOR POTENTIAL AND THE DESCRIPTION OF DOUBLE-WAVE FUNCTION
CHEN CHANG-YUAN, LIU YOU-WEN
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 536-541.
article
doi:10.7498/aps.47.536
10.7498/aps.47.536
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.536
536-541
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.542
Author(s): WU FENG-MIN, ZHU QI-PENG, SHI JIAN-QING, WU ZI-QIN <br/><p>By taking into account the influence of the concentration of particles n,diffusive range Δ,the probability of reaction P and maximum diffusive steps W,the diffusion and reaction-limited aggregation with finite steps model is presented.The varied patterns of aggregation and their fractal dimension are obtained under condition of nearest-neighbor.The results show that the form of aggregation is discrete cluster at lower n.However,the growth morphologies change from discrete cluster to continuous dendrite with the increase of P or W at higher n.</p> <br/>Acta Physica Sinica. 1998 47(4): 542-550. Published 1998-02-05
Author(s): WU FENG-MIN, ZHU QI-PENG, SHI JIAN-QING, WU ZI-QIN <br/><p>By taking into account the influence of the concentration of particles n,diffusive range Δ,the probability of reaction P and maximum diffusive steps W,the diffusion and reaction-limited aggregation with finite steps model is presented.The varied patterns of aggregation and their fractal dimension are obtained under condition of nearest-neighbor.The results show that the form of aggregation is discrete cluster at lower n.However,the growth morphologies change from discrete cluster to continuous dendrite with the increase of P or W at higher n.</p> <br/>Acta Physica Sinica. 1998 47(4): 542-550. Published 1998-02-05
DIFFUSION AND REACTION-LIMITED FRACTAL AGGREGATION WITH FINITE STEPS
WU FENG-MIN, ZHU QI-PENG, SHI JIAN-QING, WU ZI-QIN
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 542-550.
article
doi:10.7498/aps.47.542
10.7498/aps.47.542
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.542
542-550
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.551
Author(s): JIANG YI-MIN <br/><p>It is indicated that when observing the phenomenon of quantum chaos with the help of energy-level curves,except an energy-unfolded spectrum to be required,an unfolding procedure for the curve parameter should be considered too.A general method for the parameter unfolding could be realized by normalizing the mean-square-root of slopes of level curves.If the curves are in average declined,an energy shift is also needed for eliminating this,before the parameter unfolding process is carried out.Discussions of the curvature of so unfolded level-curves are made,in connection with the Gaspard-Rice-Mikeska-Nakamura's formula of dimensionless curvature.</p> <br/>Acta Physica Sinica. 1998 47(4): 551-558. Published 1998-02-05
Author(s): JIANG YI-MIN <br/><p>It is indicated that when observing the phenomenon of quantum chaos with the help of energy-level curves,except an energy-unfolded spectrum to be required,an unfolding procedure for the curve parameter should be considered too.A general method for the parameter unfolding could be realized by normalizing the mean-square-root of slopes of level curves.If the curves are in average declined,an energy shift is also needed for eliminating this,before the parameter unfolding process is carried out.Discussions of the curvature of so unfolded level-curves are made,in connection with the Gaspard-Rice-Mikeska-Nakamura's formula of dimensionless curvature.</p> <br/>Acta Physica Sinica. 1998 47(4): 551-558. Published 1998-02-05
ENERGY-CURVE UNFOLDING AND QUANTUM CHAOS
JIANG YI-MIN
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 551-558.
article
doi:10.7498/aps.47.551
10.7498/aps.47.551
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.551
551-558
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.559
Author(s): WANG JING, FANG QIAN-FENG, ZHU ZHEN-GANG <br/><p>The ultrasonic attenuation Δα has been measured during the fatigue process of aluminium which is controlled by the total strain with a triangular or a sinusoidal waveform.The results indicate that the waveform has an influence on the Δα-ε curve at low strain amplitude,but has little influence at high strain amplitude.At low strain amplitude,the major reason causing the variation of Δα is the interaction between dislocations and point defects,and the waveform can change the re-distribution of point defects at the average stress field of the vibrating dislocation segments,as a result,the stable Δα-ε curves for the two kinds of waveform are different.At high strain amplitude,dislocation multiplication occurs,the interaction between dislocation segments is dominant,and the waveform cannot influence the dislocation multiplication and the interaction between dislocation segments.</p> <br/>Acta Physica Sinica. 1998 47(4): 559-563. Published 1998-02-05
Author(s): WANG JING, FANG QIAN-FENG, ZHU ZHEN-GANG <br/><p>The ultrasonic attenuation Δα has been measured during the fatigue process of aluminium which is controlled by the total strain with a triangular or a sinusoidal waveform.The results indicate that the waveform has an influence on the Δα-ε curve at low strain amplitude,but has little influence at high strain amplitude.At low strain amplitude,the major reason causing the variation of Δα is the interaction between dislocations and point defects,and the waveform can change the re-distribution of point defects at the average stress field of the vibrating dislocation segments,as a result,the stable Δα-ε curves for the two kinds of waveform are different.At high strain amplitude,dislocation multiplication occurs,the interaction between dislocation segments is dominant,and the waveform cannot influence the dislocation multiplication and the interaction between dislocation segments.</p> <br/>Acta Physica Sinica. 1998 47(4): 559-563. Published 1998-02-05
INFLUENCE OF THE CYCLIC STRAIN WAVEFORM ON THE ULTRASONIC ATTENUATION DURING THE FATIGUE PROCESS OF ALUMINIUM
WANG JING, FANG QIAN-FENG, ZHU ZHEN-GANG
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 559-563.
article
doi:10.7498/aps.47.559
10.7498/aps.47.559
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.559
559-563
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.564
Author(s): LIN YUAN-GENG, ZHAN WEN-LONG, GUO ZHONG-YAN, ZHOU JIAN-QUN, ZHAO YOU-XIONG, LIU GUAN-HUA, WANG JIN-CHUAN, LUO YONG-FENG, LEI HUAI-HONG, QI ZHONG, ZHANG WAN-SHENG, QIN LI-JUN <br/><p>The invariant velocity spectra of the forward emitted fragments in the 25MeV/u40Ar induced reactions are investigated,their parallel momentum and reduced parallel momentum distribution widths of the fragments are extracted.Furthermore,the emitted products are summarized.</p> <br/>Acta Physica Sinica. 1998 47(4): 564-570. Published 1998-02-05
Author(s): LIN YUAN-GENG, ZHAN WEN-LONG, GUO ZHONG-YAN, ZHOU JIAN-QUN, ZHAO YOU-XIONG, LIU GUAN-HUA, WANG JIN-CHUAN, LUO YONG-FENG, LEI HUAI-HONG, QI ZHONG, ZHANG WAN-SHENG, QIN LI-JUN <br/><p>The invariant velocity spectra of the forward emitted fragments in the 25MeV/u40Ar induced reactions are investigated,their parallel momentum and reduced parallel momentum distribution widths of the fragments are extracted.Furthermore,the emitted products are summarized.</p> <br/>Acta Physica Sinica. 1998 47(4): 564-570. Published 1998-02-05
STUDIES OF 25MeV/u40Ar INDUCED REACTIONS AND THEIR FORWARD EMITTED PRODUCTS
LIN YUAN-GENG, ZHAN WEN-LONG, GUO ZHONG-YAN, ZHOU JIAN-QUN, ZHAO YOU-XIONG, LIU GUAN-HUA, WANG JIN-CHUAN, LUO YONG-FENG, LEI HUAI-HONG, QI ZHONG, ZHANG WAN-SHENG, QIN LI-JUN
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 564-570.
article
doi:10.7498/aps.47.564
10.7498/aps.47.564
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.564
564-570
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.571
Author(s): QU WEI-XING, HU SU-XING, XU ZHI-ZHAN <br/><p>The dynamical process of interaction of the 1D H+2 with an ultra-short intense laser pulse is studied with a pure classical theory.Using the classical statistical method,we investigate numerically the evolutions of the probabilities for excitation,dissociation,ionization and dissociative ionization,and analyse the calculated results.</p> <br/>Acta Physica Sinica. 1998 47(4): 571-576. Published 1998-02-05
Author(s): QU WEI-XING, HU SU-XING, XU ZHI-ZHAN <br/><p>The dynamical process of interaction of the 1D H+2 with an ultra-short intense laser pulse is studied with a pure classical theory.Using the classical statistical method,we investigate numerically the evolutions of the probabilities for excitation,dissociation,ionization and dissociative ionization,and analyse the calculated results.</p> <br/>Acta Physica Sinica. 1998 47(4): 571-576. Published 1998-02-05
THE CLASSICAL THEORY FOR INTERACTION OF THE 1D H+2 WITH ULTRA-SHORT INTENSE LASER PULSE
QU WEI-XING, HU SU-XING, XU ZHI-ZHAN
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 571-576.
article
doi:10.7498/aps.47.571
10.7498/aps.47.571
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.571
571-576
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.577
Author(s): JIN SHI-QI, XU ZHI-ZHAN <br/><p>We have studied the electron-neon scattering in the range of projectile energies form 10 to 100eV,presented the differential cross sections of scattering from the ground state to n≤4 states.</p> <br/>Acta Physica Sinica. 1998 47(4): 577-582. Published 1998-02-05
Author(s): JIN SHI-QI, XU ZHI-ZHAN <br/><p>We have studied the electron-neon scattering in the range of projectile energies form 10 to 100eV,presented the differential cross sections of scattering from the ground state to n≤4 states.</p> <br/>Acta Physica Sinica. 1998 47(4): 577-582. Published 1998-02-05
ELECTRON-NEON SCATTERING AT 10—100eV
JIN SHI-QI, XU ZHI-ZHAN
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 577-582.
article
doi:10.7498/aps.47.577
10.7498/aps.47.577
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.577
577-582
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.583
Author(s): YAN SHI-XIANG, CHEN CHONG-YANG, TENG ZHOU-XUAN, WANG YAN-SEN, SUN YONG-SHENG <br/><p>A distorted-wave Born exchange (DWBE) approximation is used to calculate the cross sections of electron-impact ionization for Ne+,…,Ne6+.The comparison shows good agreement between theoretical and experimental results.We give empirical formulas with high precision to meet the requirements of applications.The validity of the DWBE method in lowly ionized ions and the affect of the exchange potential on the calculated results are also discussed.</p> <br/>Acta Physica Sinica. 1998 47(4): 583-590. Published 1998-02-05
Author(s): YAN SHI-XIANG, CHEN CHONG-YANG, TENG ZHOU-XUAN, WANG YAN-SEN, SUN YONG-SHENG <br/><p>A distorted-wave Born exchange (DWBE) approximation is used to calculate the cross sections of electron-impact ionization for Ne+,…,Ne6+.The comparison shows good agreement between theoretical and experimental results.We give empirical formulas with high precision to meet the requirements of applications.The validity of the DWBE method in lowly ionized ions and the affect of the exchange potential on the calculated results are also discussed.</p> <br/>Acta Physica Sinica. 1998 47(4): 583-590. Published 1998-02-05
DISTORTED-WAVE CALCULATIONS OF THE ELECTRON-IMPACT IONIZATION FOR LOWLY AND MEDIUMLY IONIZED IONS
YAN SHI-XIANG, CHEN CHONG-YANG, TENG ZHOU-XUAN, WANG YAN-SEN, SUN YONG-SHENG
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 583-590.
article
doi:10.7498/aps.47.583
10.7498/aps.47.583
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.583
583-590
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.591
Author(s): SUN WEI, CHANG MING, YANG BAO-HE <br/><p>This paper presents a molecular dynamics simulation for the atomic structure of nanocrystalline copper.The density,energy distribution,X-ray diffraction patterns and radial distribution function were calculated as functions of grain size in the nanocrystal.The results show that the large volume fraction of the boundaries and the distortion of the grains make the properties of nanocrystals different from those of materials consisting of coarse grains.</p> <br/>Acta Physica Sinica. 1998 47(4): 591-597. Published 1998-02-05
Author(s): SUN WEI, CHANG MING, YANG BAO-HE <br/><p>This paper presents a molecular dynamics simulation for the atomic structure of nanocrystalline copper.The density,energy distribution,X-ray diffraction patterns and radial distribution function were calculated as functions of grain size in the nanocrystal.The results show that the large volume fraction of the boundaries and the distortion of the grains make the properties of nanocrystals different from those of materials consisting of coarse grains.</p> <br/>Acta Physica Sinica. 1998 47(4): 591-597. Published 1998-02-05
THE MOLECULAR DYNAMICS SIMULATION FOR THE STRUCTURE AND PROPERTIES OF NANOCRYSTALLINE COPPER
SUN WEI, CHANG MING, YANG BAO-HE
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 591-597.
article
doi:10.7498/aps.47.591
10.7498/aps.47.591
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.591
591-597
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.598
Author(s): FENG YU-WEN, ZHOU ZHONG-XIANG, JIANG YONG-YUAN, SUN XIU-DONG, XU KE-BIN <br/><p>We have discussed the recording of moving grating in photorefractive materials at large modulation depths using hopping model.The analytical expressions of the first three-order spatial charge field are presented which describe the nonstatic recording of the moving fringes.And the dependence of the space charge field on the veloctiy of the moving fringes is discussed for non diffusive field.We found that the higher-order harmonics of the space charge field for low diffusive field can be selectively enhanced with applied small dc field.Otherwise,they cannot be selectively enhanced if the diffusive field is large than the applied electric field.</p> <br/>Acta Physica Sinica. 1998 47(4): 598-605. Published 1998-02-05
Author(s): FENG YU-WEN, ZHOU ZHONG-XIANG, JIANG YONG-YUAN, SUN XIU-DONG, XU KE-BIN <br/><p>We have discussed the recording of moving grating in photorefractive materials at large modulation depths using hopping model.The analytical expressions of the first three-order spatial charge field are presented which describe the nonstatic recording of the moving fringes.And the dependence of the space charge field on the veloctiy of the moving fringes is discussed for non diffusive field.We found that the higher-order harmonics of the space charge field for low diffusive field can be selectively enhanced with applied small dc field.Otherwise,they cannot be selectively enhanced if the diffusive field is large than the applied electric field.</p> <br/>Acta Physica Sinica. 1998 47(4): 598-605. Published 1998-02-05
PERTURBATIVE ANALYSIS OF PHOTOREFRACTIVE MOVING GRATING AT LARGE MODULATION DEPTHS
FENG YU-WEN, ZHOU ZHONG-XIANG, JIANG YONG-YUAN, SUN XIU-DONG, XU KE-BIN
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 598-605.
article
doi:10.7498/aps.47.598
10.7498/aps.47.598
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.598
598-605
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.606
Author(s): FU JIAN, GAO XIAO-CHUN, XU JING-BO, ZOU XU-BO <br/><p>The invariant-related unitary transformation method is used to study the transference of a kind of nonclassical properties between two interacting modes of light.With the aid of numerical computation,it is interesting to find that the mutual conversion of the Fock states (being nonclassical) and the coherent states is attained when the interaction is chosen appropriately.</p> <br/>Acta Physica Sinica. 1998 47(4): 606-612. Published 1998-02-05
Author(s): FU JIAN, GAO XIAO-CHUN, XU JING-BO, ZOU XU-BO <br/><p>The invariant-related unitary transformation method is used to study the transference of a kind of nonclassical properties between two interacting modes of light.With the aid of numerical computation,it is interesting to find that the mutual conversion of the Fock states (being nonclassical) and the coherent states is attained when the interaction is chosen appropriately.</p> <br/>Acta Physica Sinica. 1998 47(4): 606-612. Published 1998-02-05
TRANSFERENCE OF A KIND OF NONCLASSICAL PROPERTIES BETWEEN TWO INTERACTING MODES OF LIGHT
FU JIAN, GAO XIAO-CHUN, XU JING-BO, ZOU XU-BO
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 606-612.
article
doi:10.7498/aps.47.606
10.7498/aps.47.606
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.606
606-612
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.613
Author(s): YANG JIA-MIN, YI RONG-QING, CHEN ZHENG-LIN, SUN KE-XU, DING YAO-NAN, ZHENG ZHI-JIAN, LI CHAO-GUANG, CUI MING-QI, ZHU PEI-PING, CUI CONG-WU <br/><p>Absolute diffraction efficiencies of a transmission grating at a photon energy of 844eV have been calibrated on synchrotron radiation source.With the aid of grating model,all structure parameters of the grating are obtained and absolute diffraction efficiencies for soft X-rays in the range of 100—2000eV are calculated and discussed.</p> <br/>Acta Physica Sinica. 1998 47(4): 613-618. Published 1998-02-05
Author(s): YANG JIA-MIN, YI RONG-QING, CHEN ZHENG-LIN, SUN KE-XU, DING YAO-NAN, ZHENG ZHI-JIAN, LI CHAO-GUANG, CUI MING-QI, ZHU PEI-PING, CUI CONG-WU <br/><p>Absolute diffraction efficiencies of a transmission grating at a photon energy of 844eV have been calibrated on synchrotron radiation source.With the aid of grating model,all structure parameters of the grating are obtained and absolute diffraction efficiencies for soft X-rays in the range of 100—2000eV are calculated and discussed.</p> <br/>Acta Physica Sinica. 1998 47(4): 613-618. Published 1998-02-05
STUDY OF TRANSMISSION GRATING DIFFRACTION EFFICIENCIES FOR SOFT X-RAYS
YANG JIA-MIN, YI RONG-QING, CHEN ZHENG-LIN, SUN KE-XU, DING YAO-NAN, ZHENG ZHI-JIAN, LI CHAO-GUANG, CUI MING-QI, ZHU PEI-PING, CUI CONG-WU
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 613-618.
article
doi:10.7498/aps.47.613
10.7498/aps.47.613
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.613
613-618
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.619
Author(s): WU JIAN, LOU CAI-YUN, LI YU-HUA, GAO YI-ZHI <br/><p>In this paper,we study theoretically and experimentally the compression of chirped optical pulses in dispersion-compensation fiber and dispersion-shifted fiber utilizing single mode rate equation of semiconductor laser and nonlinear Schrdinger (NLS) equation.In experiment,the 53.8ps pulses generated by a gain-switched DFB semiconductor laser diode with 2.5GHz repetition rate were compressed to 12ps in a length of dispersion-compensation fiber.Then,the 12ps pulses were compressed to 2.5 or 2.1ps due to high-order soliton effect in dispersion-shifted fiber.Experimental results agree with theoretical results.</p> <br/>Acta Physica Sinica. 1998 47(4): 619-624. Published 1998-02-05
Author(s): WU JIAN, LOU CAI-YUN, LI YU-HUA, GAO YI-ZHI <br/><p>In this paper,we study theoretically and experimentally the compression of chirped optical pulses in dispersion-compensation fiber and dispersion-shifted fiber utilizing single mode rate equation of semiconductor laser and nonlinear Schrdinger (NLS) equation.In experiment,the 53.8ps pulses generated by a gain-switched DFB semiconductor laser diode with 2.5GHz repetition rate were compressed to 12ps in a length of dispersion-compensation fiber.Then,the 12ps pulses were compressed to 2.5 or 2.1ps due to high-order soliton effect in dispersion-shifted fiber.Experimental results agree with theoretical results.</p> <br/>Acta Physica Sinica. 1998 47(4): 619-624. Published 1998-02-05
THEORETICAL AND EXPERIMENTAL STUDY ON COMPRESSION OF CHIRPED OPTICAL PULSES UTILIZING DISPERSION-COMPENSATION AND HIGH-ORDER SOLITON EFFECT
WU JIAN, LOU CAI-YUN, LI YU-HUA, GAO YI-ZHI
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 619-624.
article
doi:10.7498/aps.47.619
10.7498/aps.47.619
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.619
619-624
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.625
Author(s): MENG XU-JUN, SUN YONG-SHENG, LONG YAN-QIN <br/><p>In this paper a detailed study is performed to the ionic abundance in hot plasmas at definite temperatures and densities of matter by employing both the theory f fluctuation of entropy and Boltzmann relation on the relativistic Hartree-Fock-Slater self-consistent field average atomic model.A convolution method for fast calculation of ionic abundance is presented.The degree of ionization and ionic abundance following the changes of temperature and density of matter is discussed by taking gold as an example.</p> <br/>Acta Physica Sinica. 1998 47(4): 625-631. Published 1998-02-05
Author(s): MENG XU-JUN, SUN YONG-SHENG, LONG YAN-QIN <br/><p>In this paper a detailed study is performed to the ionic abundance in hot plasmas at definite temperatures and densities of matter by employing both the theory f fluctuation of entropy and Boltzmann relation on the relativistic Hartree-Fock-Slater self-consistent field average atomic model.A convolution method for fast calculation of ionic abundance is presented.The degree of ionization and ionic abundance following the changes of temperature and density of matter is discussed by taking gold as an example.</p> <br/>Acta Physica Sinica. 1998 47(4): 625-631. Published 1998-02-05
STUDY OF IONIC ABUNDANCE FOR LTE PLASMAS
MENG XU-JUN, SUN YONG-SHENG, LONG YAN-QIN
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 625-631.
article
doi:10.7498/aps.47.625
10.7498/aps.47.625
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.625
625-631
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.632
Author(s): NING DONG, LOU QI-HONG <br/><p>We reviewed recent theoretical and experimental results on the polymerization of solid C60.The characteristics in common of several methods and the difference between each other are analyzed.Orientational disorder always plays an important role in polymerization,because two C60 molecules must be located at a specified relative position before cycloaddition reaction.</p> <br/>Acta Physica Sinica. 1998 47(4): 632-644. Published 1998-02-05
Author(s): NING DONG, LOU QI-HONG <br/><p>We reviewed recent theoretical and experimental results on the polymerization of solid C60.The characteristics in common of several methods and the difference between each other are analyzed.Orientational disorder always plays an important role in polymerization,because two C60 molecules must be located at a specified relative position before cycloaddition reaction.</p> <br/>Acta Physica Sinica. 1998 47(4): 632-644. Published 1998-02-05
POLYMERIZATION OF SOLID C60
NING DONG, LOU QI-HONG
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 632-644.
article
doi:10.7498/aps.47.632
10.7498/aps.47.632
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.632
632-644
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.645
Author(s): ZHANG TING-QING, LI JIAN-JUN, LIU JIA-LU, ZHAO YUAN-FU <br/><p>The migration equation of fluorine in polycrystalline silicon gate is presented on the basis of analysis for the migration characteristics of fluorine in polycrystalline silicon gate after BF+2 is implanted into polycrystalline silicon gate.The distribution of fluorine in polycrystalline silicon gate is simulated by the finite difference methods.The simulation results are in good agreement with the experiments.Under the condition of 80keV,2×1015cm-2BF+2 implanted into polycrystalline Si gate and then annealed at 900℃ for 30s,some important coefficients are given as follows: emisson coefficient of fluorine in polycrystalline silicon e=6×10-2s-1,diffusion coefficient of fluorine in grain boundary Db=7.64×10-12cm/s,absorption coefficient of fluorine in polycrystalline Si/SiO2 interface S1=1.74×10-3s-1 and damage absorption coefficient of fluorine in polycrystalline silicon S1=7.32×10-4s-1.</p> <br/>Acta Physica Sinica. 1998 47(4): 645-651. Published 1998-02-05
Author(s): ZHANG TING-QING, LI JIAN-JUN, LIU JIA-LU, ZHAO YUAN-FU <br/><p>The migration equation of fluorine in polycrystalline silicon gate is presented on the basis of analysis for the migration characteristics of fluorine in polycrystalline silicon gate after BF+2 is implanted into polycrystalline silicon gate.The distribution of fluorine in polycrystalline silicon gate is simulated by the finite difference methods.The simulation results are in good agreement with the experiments.Under the condition of 80keV,2×1015cm-2BF+2 implanted into polycrystalline Si gate and then annealed at 900℃ for 30s,some important coefficients are given as follows: emisson coefficient of fluorine in polycrystalline silicon e=6×10-2s-1,diffusion coefficient of fluorine in grain boundary Db=7.64×10-12cm/s,absorption coefficient of fluorine in polycrystalline Si/SiO2 interface S1=1.74×10-3s-1 and damage absorption coefficient of fluorine in polycrystalline silicon S1=7.32×10-4s-1.</p> <br/>Acta Physica Sinica. 1998 47(4): 645-651. Published 1998-02-05
ANALYSIS AND SIMULATION OF FLUORINE MIGRATION CHARACTERISTICS OF BF+2-IMPLANTED INTO POLYCRYSTALLINE SILICON GATE
ZHANG TING-QING, LI JIAN-JUN, LIU JIA-LU, ZHAO YUAN-FU
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 645-651.
article
doi:10.7498/aps.47.645
10.7498/aps.47.645
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.645
645-651
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.652
Author(s): WAN JUN, YE LING, WANG XUN <br/><p>The atomic configuration and electronic structure of erbium-doped silicon are studied theoretically by using local density formalism (LDF) and discrete variational method (DVM).The influence of codoping with oxygen is also investigated.The minimum-energy atomic configuration is that erbium occupies a tetrahedral interstitial site for an isolated erbium atom.In this configuration,Er 5d levels are located near the conduction band edge of Si in shallow resonance states. With the presence of oxygen,the binding energy of the structure decreases. In this case,the minimum-energy atomic configuration is that erbium occupies a hexagonal interstitial site with six nearest neighbors of oxygen atoms. An electronic state caused by the hybridization of Er 5d,O 2p and Si 2p electrons is located 0.3eV below the conduction band edge,which might be correlated with the deep level at Ec-0.15eV observed by the experimental measurement in Er and O codoped Si.</p> <br/>Acta Physica Sinica. 1998 47(4): 652-657. Published 1998-02-05
Author(s): WAN JUN, YE LING, WANG XUN <br/><p>The atomic configuration and electronic structure of erbium-doped silicon are studied theoretically by using local density formalism (LDF) and discrete variational method (DVM).The influence of codoping with oxygen is also investigated.The minimum-energy atomic configuration is that erbium occupies a tetrahedral interstitial site for an isolated erbium atom.In this configuration,Er 5d levels are located near the conduction band edge of Si in shallow resonance states. With the presence of oxygen,the binding energy of the structure decreases. In this case,the minimum-energy atomic configuration is that erbium occupies a hexagonal interstitial site with six nearest neighbors of oxygen atoms. An electronic state caused by the hybridization of Er 5d,O 2p and Si 2p electrons is located 0.3eV below the conduction band edge,which might be correlated with the deep level at Ec-0.15eV observed by the experimental measurement in Er and O codoped Si.</p> <br/>Acta Physica Sinica. 1998 47(4): 652-657. Published 1998-02-05
ATOMIC CONFIGURATION AND ELECTRONIC STRUCTURE OF ERBIUM-DOPED SILICON
WAN JUN, YE LING, WANG XUN
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 652-657.
article
doi:10.7498/aps.47.652
10.7498/aps.47.652
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.652
652-657
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.658
Author(s): SHUI JIA-PENG, LIU YONG-SONG, PEI HUI-YUAN <br/><p>The expressions of internal friction values of four mechanical models and corresponding vibration systems have been deduced.The relationships between the internal friction values of the specimen and the vibration system for two-parameter models and two models of the standard anelastic solid have been obtained.It is found that these relationships for different models or the materials of different mechanical properties are different.</p> <br/>Acta Physica Sinica. 1998 47(4): 658-663. Published 1998-02-05
Author(s): SHUI JIA-PENG, LIU YONG-SONG, PEI HUI-YUAN <br/><p>The expressions of internal friction values of four mechanical models and corresponding vibration systems have been deduced.The relationships between the internal friction values of the specimen and the vibration system for two-parameter models and two models of the standard anelastic solid have been obtained.It is found that these relationships for different models or the materials of different mechanical properties are different.</p> <br/>Acta Physica Sinica. 1998 47(4): 658-663. Published 1998-02-05
COMPARISON BETWEEN THE INTERNAL FRICTION VALUES OF THE SPECIMEN AND THE VIBRATION SYSTEM
SHUI JIA-PENG, LIU YONG-SONG, PEI HUI-YUAN
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 658-663.
article
doi:10.7498/aps.47.658
10.7498/aps.47.658
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.658
658-663
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.664
Author(s): QIAN XIANG-ZHONG <br/><p>An expression concerning the variation of the pitch of SmC* liquid crystals is obtained by using the cell model in statistical mechanics with the introduction of the distribution factor ζχ of the chiral centers in the interaction potential between biaxial molecules containing multiple chiral centers.It shows the condition for inversion of helicity of the liquid crystals.With proper choice of the values of parameters involved we have calculated the variation of the pitch with temperature for liquid crystals TDOBAMCC,FLC,PACMB and H6/10.The calculated results agree well with the experimental data.</p> <br/>Acta Physica Sinica. 1998 47(4): 664-671. Published 1998-02-05
Author(s): QIAN XIANG-ZHONG <br/><p>An expression concerning the variation of the pitch of SmC* liquid crystals is obtained by using the cell model in statistical mechanics with the introduction of the distribution factor ζχ of the chiral centers in the interaction potential between biaxial molecules containing multiple chiral centers.It shows the condition for inversion of helicity of the liquid crystals.With proper choice of the values of parameters involved we have calculated the variation of the pitch with temperature for liquid crystals TDOBAMCC,FLC,PACMB and H6/10.The calculated results agree well with the experimental data.</p> <br/>Acta Physica Sinica. 1998 47(4): 664-671. Published 1998-02-05
THE PITCH AND CHIRAL CENTER DISTRIBUTION IN SmC* LIQUID CRYSTALS
QIAN XIANG-ZHONG
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 664-671.
article
doi:10.7498/aps.47.664
10.7498/aps.47.664
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.664
664-671
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.672
Author(s): CHEN XIAO-HUA, PENG JING-CUI, CHEN KE-QIU, CHEN ZONG-ZHANG <br/><p>The distribution of the orientationally ordered structure and reorientation relaxation behavior in solid C60 at high pressure and low temperature have been investigated by using a model of the classical molecular interaction between C60 molecules.The anomalous behavior in thermal conductivity experiment can be well explained theoretically.</p> <br/>Acta Physica Sinica. 1998 47(4): 672-677. Published 1998-02-05
Author(s): CHEN XIAO-HUA, PENG JING-CUI, CHEN KE-QIU, CHEN ZONG-ZHANG <br/><p>The distribution of the orientationally ordered structure and reorientation relaxation behavior in solid C60 at high pressure and low temperature have been investigated by using a model of the classical molecular interaction between C60 molecules.The anomalous behavior in thermal conductivity experiment can be well explained theoretically.</p> <br/>Acta Physica Sinica. 1998 47(4): 672-677. Published 1998-02-05
ORIENTATIONALLY ORDERED STATE AND REORIENTATION RELAXATION IN SOLID C60 AT HIGH PRESSURE AND LOW TEMPERATURE
CHEN XIAO-HUA, PENG JING-CUI, CHEN KE-QIU, CHEN ZONG-ZHANG
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 672-677.
article
doi:10.7498/aps.47.672
10.7498/aps.47.672
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.672
672-677
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.678
Author(s): XIANG SONG, ZHUANG JUN, LIU LEI <br/><p>Self-diffusion of adatoms on Ag,Pt,Au(110) surfaces is investigated with the surface embed-ded atom method(SEAM) and molecular dynamics.By quenched molecular dynamics,the static energy variation and the pathway of the atoms for hopping and exchange mechanisms are obtained.The self-diffusion characteristics of these metals are analyzed,and the results show that the diffusion is isotropic on Pt(110) surface but anisotropic on Au,which are in accordance with the observation in experiments.</p> <br/>Acta Physica Sinica. 1998 47(4): 678-685. Published 1998-02-05
Author(s): XIANG SONG, ZHUANG JUN, LIU LEI <br/><p>Self-diffusion of adatoms on Ag,Pt,Au(110) surfaces is investigated with the surface embed-ded atom method(SEAM) and molecular dynamics.By quenched molecular dynamics,the static energy variation and the pathway of the atoms for hopping and exchange mechanisms are obtained.The self-diffusion characteristics of these metals are analyzed,and the results show that the diffusion is isotropic on Pt(110) surface but anisotropic on Au,which are in accordance with the observation in experiments.</p> <br/>Acta Physica Sinica. 1998 47(4): 678-685. Published 1998-02-05
SELF-DIFFUSION OF ADATOMS ON Ag,Pt,Au(110) SURFACES
XIANG SONG, ZHUANG JUN, LIU LEI
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 678-685.
article
doi:10.7498/aps.47.678
10.7498/aps.47.678
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.678
678-685
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.686
Author(s): HAN SI-JIN, CHEN JIN-SONG, FANG RONG-CHUAN, SHANG NAI-GUI, SHAO QIN-YI, LE DE-FEN, LIAO YUAN, YE ZHI-YUAN, YI BO, CUI JING-BIAO <br/><p>Two kinds of Cu substrates were used to grow diamond films,one of them being 99.99% polycrystalline Cu foil and the other 99.95% phosphorus deoxidized Cu foil.Large-area,free-standing polycrystalline diamond films were obtained by hot filament CVD on both substrates.The diamond films on the two kinds of Cu substrates were comparatively investigated by high resolution optical microscopy,scanning electron microscopy,Raman spectroscopy,and X-ray diffraction.The quality of films on deoxidized Cu are not worse than that on polycrystalline Cu,while the nucleation densities ,growth rate and stress in film on deoxidized Cu is higher than those on polycrystalline Cu.It is indicated that the annealing process and optimized growth conditions must be used to obtain large-area continuous diamond films.</p> <br/>Acta Physica Sinica. 1998 47(4): 686-691. Published 1998-02-05
Author(s): HAN SI-JIN, CHEN JIN-SONG, FANG RONG-CHUAN, SHANG NAI-GUI, SHAO QIN-YI, LE DE-FEN, LIAO YUAN, YE ZHI-YUAN, YI BO, CUI JING-BIAO <br/><p>Two kinds of Cu substrates were used to grow diamond films,one of them being 99.99% polycrystalline Cu foil and the other 99.95% phosphorus deoxidized Cu foil.Large-area,free-standing polycrystalline diamond films were obtained by hot filament CVD on both substrates.The diamond films on the two kinds of Cu substrates were comparatively investigated by high resolution optical microscopy,scanning electron microscopy,Raman spectroscopy,and X-ray diffraction.The quality of films on deoxidized Cu are not worse than that on polycrystalline Cu,while the nucleation densities ,growth rate and stress in film on deoxidized Cu is higher than those on polycrystalline Cu.It is indicated that the annealing process and optimized growth conditions must be used to obtain large-area continuous diamond films.</p> <br/>Acta Physica Sinica. 1998 47(4): 686-691. Published 1998-02-05
DIAMOND FILMS GROWTH ON POLYCRYSTALLINE Cu AND PHOSPHORUS DEOXIDIZED Cu
HAN SI-JIN, CHEN JIN-SONG, FANG RONG-CHUAN, SHANG NAI-GUI, SHAO QIN-YI, LE DE-FEN, LIAO YUAN, YE ZHI-YUAN, YI BO, CUI JING-BIAO
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 686-691.
article
doi:10.7498/aps.47.686
10.7498/aps.47.686
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.686
686-691
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.692
Author(s): ZHANG FA-PEI, XU PENG-SHOU, XU FA-QIANG, LU ER-DONG, SUN YU-MING, ZHANG XIN-YI, ZHU JING-SHENG, LIANG REN-YOU <br/><p>Synchrotron radiation photoemission and ferromagnetic resonace(FMR) measurement have been used to study the interface formation of Co/GaAs(100) as well as the magnetic property of ultrathin Co films.The results show strong interface disruption and reaction between overlayer and substrate at low Co coverage(~0.2nm),At the coverage of 1nm,a stable interface forms.The Ga atoms in bulk GaAs may exchange with Co atoms and diffuse into Co overlayer,while a certain amount of As reacts with Co atoms,forming stable Co-As bonding.These reaction products lie in the narrow region near the interface(0.3—0.4nm).The remanent part of As will segregates on the surface of Co overlayer.Based on a theoretical model,the interface structure and concentration profile are discussed in detail.The FMR result demontrates that the ultrathin Co film consists of good-quality crystals and has a chemical homogeneity.</p> <br/>Acta Physica Sinica. 1998 47(4): 692-698. Published 1998-02-05
Author(s): ZHANG FA-PEI, XU PENG-SHOU, XU FA-QIANG, LU ER-DONG, SUN YU-MING, ZHANG XIN-YI, ZHU JING-SHENG, LIANG REN-YOU <br/><p>Synchrotron radiation photoemission and ferromagnetic resonace(FMR) measurement have been used to study the interface formation of Co/GaAs(100) as well as the magnetic property of ultrathin Co films.The results show strong interface disruption and reaction between overlayer and substrate at low Co coverage(~0.2nm),At the coverage of 1nm,a stable interface forms.The Ga atoms in bulk GaAs may exchange with Co atoms and diffuse into Co overlayer,while a certain amount of As reacts with Co atoms,forming stable Co-As bonding.These reaction products lie in the narrow region near the interface(0.3—0.4nm).The remanent part of As will segregates on the surface of Co overlayer.Based on a theoretical model,the interface structure and concentration profile are discussed in detail.The FMR result demontrates that the ultrathin Co film consists of good-quality crystals and has a chemical homogeneity.</p> <br/>Acta Physica Sinica. 1998 47(4): 692-698. Published 1998-02-05
STUDIES OF INTERFACE FORMATION OF Co/GaAs(100) AND THE MAGNETIC PROPERTY OF ULTRATHIN Co FILMS
ZHANG FA-PEI, XU PENG-SHOU, XU FA-QIANG, LU ER-DONG, SUN YU-MING, ZHANG XIN-YI, ZHU JING-SHENG, LIANG REN-YOU
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 692-698.
article
doi:10.7498/aps.47.692
10.7498/aps.47.692
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.692
692-698
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//www.getgobooth.com/en/article/doi/10.7498/aps.47.699
Author(s): LIU MING, WANG ZI-OU, HE YU-LIANG, JIANG XING-LIU <br/><p>The diode consisting of nano-silicon quantum dots embedded in an amorphous silicon matrix was fabricated and the discontinuous staircases on its I-V curves were observed.There were two distinct regimes on I-V curves of diode:(i) the sequential tunneling regime,where current increased monotonously with increasing negative bias;(ii) the resonant tunneling regime,where the current increased dramatically with increasing negative bias,and three quantum staircases appeared.It was found that the steps was related to the grains of the deposited film.The qualitative explanation of this physical phenomenon was proposed in terms of the material structural characteristics.</p> <br/>Acta Physica Sinica. 1998 47(4): 699-704. Published 1998-02-05
Author(s): LIU MING, WANG ZI-OU, HE YU-LIANG, JIANG XING-LIU <br/><p>The diode consisting of nano-silicon quantum dots embedded in an amorphous silicon matrix was fabricated and the discontinuous staircases on its I-V curves were observed.There were two distinct regimes on I-V curves of diode:(i) the sequential tunneling regime,where current increased monotonously with increasing negative bias;(ii) the resonant tunneling regime,where the current increased dramatically with increasing negative bias,and three quantum staircases appeared.It was found that the steps was related to the grains of the deposited film.The qualitative explanation of this physical phenomenon was proposed in terms of the material structural characteristics.</p> <br/>Acta Physica Sinica. 1998 47(4): 699-704. Published 1998-02-05
RESONANT TUNNELING THROUGH NANO-SIZE QUANTUM DOT EMBEDDED IN AMORPHOUS TISSUES
LIU MING, WANG ZI-OU, HE YU-LIANG, JIANG XING-LIU
1998-02-05
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1998 47(4): 699-704.
article
doi:10.7498/aps.47.699
10.7498/aps.47.699
Acta Physica Sinica
47
4
1998-02-05
//www.getgobooth.com/en/article/doi/10.7498/aps.47.699
699-704