Acta Physica Sinica //www.getgobooth.com/ 必威体育下载 daily 15 2024-08-20 10:33:36 apsoffice@iphy.ac.cn apsoffice@iphy.ac.cn 2024-08-20 10:33:36 zh Copyright ©Acta Physica Sinica All Rights Reserved. 京ICP备05002789号-1 Address: PostCode:100190 Phone: 010-82649829,82649241,82649863 Email: apsoffice@iphy.ac.cn Copyright ©Acta Physica Sinica All Rights Reserved apsoffice@iphy.ac.cn 1000-3290 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.1 Author(s): Qiao Yong-Fen, Zhao Shu-Hong <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 1-7. Published 2006-12-22 Author(s): Qiao Yong-Fen, Zhao Shu-Hong <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 1-7. Published 2006-12-22 Qiao Yong-Fen, Zhao Shu-Hong 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 1-7. article doi:10.7498/aps.50.1 10.7498/aps.50.1 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.1 1-7 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.8 Author(s): Zhou Tian-Shou, Zhang Suo-Chun <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 8-12. Published 2006-12-22 Author(s): Zhou Tian-Shou, Zhang Suo-Chun <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 8-12. Published 2006-12-22 Zhou Tian-Shou, Zhang Suo-Chun 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 8-12. article doi:10.7498/aps.50.8 10.7498/aps.50.8 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.8 8-12 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.13 Author(s): Lin Ji, Wang Ke-Lin <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 13-20. Published 2006-12-22 Author(s): Lin Ji, Wang Ke-Lin <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 13-20. Published 2006-12-22 Lin Ji, Wang Ke-Lin 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 13-20. article doi:10.7498/aps.50.13 10.7498/aps.50.13 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.13 13-20 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.21 Author(s): Lai Jian-Wen, Zhou Shi-Ping, Li Guo-Hui, Xu De-Ming <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 21-25. Published 2006-12-22 Author(s): Lai Jian-Wen, Zhou Shi-Ping, Li Guo-Hui, Xu De-Ming <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 21-25. Published 2006-12-22 Lai Jian-Wen, Zhou Shi-Ping, Li Guo-Hui, Xu De-Ming 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 21-25. article doi:10.7498/aps.50.21 10.7498/aps.50.21 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.21 21-25 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.26 Author(s): Guan Xin-Ping, Peng Hai-Peng, Li Li-Xiang, Wang Yi-Qun <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 26-29. Published 2006-12-22 Author(s): Guan Xin-Ping, Peng Hai-Peng, Li Li-Xiang, Wang Yi-Qun <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 26-29. Published 2006-12-22 Guan Xin-Ping, Peng Hai-Peng, Li Li-Xiang, Wang Yi-Qun 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 26-29. article doi:10.7498/aps.50.26 10.7498/aps.50.26 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.26 26-29 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.30 Author(s): Huang Ping-Hua, Kong Ling-Jiang, Liu Mu-Ren <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 30-36. Published 2006-12-22 Author(s): Huang Ping-Hua, Kong Ling-Jiang, Liu Mu-Ren <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 30-36. Published 2006-12-22 Huang Ping-Hua, Kong Ling-Jiang, Liu Mu-Ren 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 30-36. article doi:10.7498/aps.50.30 10.7498/aps.50.30 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.30 30-36 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.37 Author(s): Yi You-Gen, Zhu Zheng-He, Tang Yong-Jian, Fu Yi-Bei <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 37-41. Published 2006-12-22 Author(s): Yi You-Gen, Zhu Zheng-He, Tang Yong-Jian, Fu Yi-Bei <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 37-41. Published 2006-12-22 Yi You-Gen, Zhu Zheng-He, Tang Yong-Jian, Fu Yi-Bei 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 37-41. article doi:10.7498/aps.50.37 10.7498/aps.50.37 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.37 37-41 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.42 Author(s): Guo Li-Xin, Wu Zhen-Sen <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 42-47. Published 2006-12-22 Author(s): Guo Li-Xin, Wu Zhen-Sen <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 42-47. Published 2006-12-22 Guo Li-Xin, Wu Zhen-Sen 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 42-47. article doi:10.7498/aps.50.42 10.7498/aps.50.42 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.42 42-47 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.48 Author(s): Liu Li, Deng Xiao-Qiang, Wang Gui-Ying, Xu Zhi-Zhan <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 48-51. Published 2006-12-22 Author(s): Liu Li, Deng Xiao-Qiang, Wang Gui-Ying, Xu Zhi-Zhan <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 48-51. Published 2006-12-22 Liu Li, Deng Xiao-Qiang, Wang Gui-Ying, Xu Zhi-Zhan 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 48-51. article doi:10.7498/aps.50.48 10.7498/aps.50.48 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.48 48-51 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.52 Author(s): Ao Sheng-Mei, Zhou Shi-Lun, Zeng Gao-Jian <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 52-58. Published 2006-12-22 Author(s): Ao Sheng-Mei, Zhou Shi-Lun, Zeng Gao-Jian <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 52-58. Published 2006-12-22 Ao Sheng-Mei, Zhou Shi-Lun, Zeng Gao-Jian 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 52-58. article doi:10.7498/aps.50.52 10.7498/aps.50.52 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.52 52-58 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.59 Author(s): Yao Chun-Mei, Guo Guang-Can <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 59-62. Published 2006-12-22 Author(s): Yao Chun-Mei, Guo Guang-Can <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 59-62. Published 2006-12-22 Yao Chun-Mei, Guo Guang-Can 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 59-62. article doi:10.7498/aps.50.59 10.7498/aps.50.59 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.59 59-62 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.63 Author(s): Zhao Li-Juan, Sun Ling-Dong, Xu Jing-Jun, Zhang Guang-Yin <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 63-67. Published 2006-12-22 Author(s): Zhao Li-Juan, Sun Ling-Dong, Xu Jing-Jun, Zhang Guang-Yin <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 63-67. Published 2006-12-22 Zhao Li-Juan, Sun Ling-Dong, Xu Jing-Jun, Zhang Guang-Yin 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 63-67. article doi:10.7498/aps.50.63 10.7498/aps.50.63 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.63 63-67 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.68 Author(s): Chai Lu, Wang Qing-Yue, Zhang Zhi-Gang, Zhao Jiang-Shan, Wang Yong, Zhang Wei-Li, Xing Qi-Rong <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 68-72. Published 2006-12-22 Author(s): Chai Lu, Wang Qing-Yue, Zhang Zhi-Gang, Zhao Jiang-Shan, Wang Yong, Zhang Wei-Li, Xing Qi-Rong <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 68-72. Published 2006-12-22 Chai Lu, Wang Qing-Yue, Zhang Zhi-Gang, Zhao Jiang-Shan, Wang Yong, Zhang Wei-Li, Xing Qi-Rong 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 68-72. article doi:10.7498/aps.50.68 10.7498/aps.50.68 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.68 68-72 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.73 Author(s): Shao Zhong-Hao <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 73-78. Published 2006-12-22 Author(s): Shao Zhong-Hao <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 73-78. Published 2006-12-22 Shao Zhong-Hao 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 73-78. article doi:10.7498/aps.50.73 10.7498/aps.50.73 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.73 73-78 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.79 Author(s): LI Ya, Chen Ling-Yan, Zhang Zhe, Wu Yong-Gang, Qiao Yi, Xu Wei-Xin <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 79-82. Published 2006-12-22 Author(s): LI Ya, Chen Ling-Yan, Zhang Zhe, Wu Yong-Gang, Qiao Yi, Xu Wei-Xin <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 79-82. Published 2006-12-22 LI Ya, Chen Ling-Yan, Zhang Zhe, Wu Yong-Gang, Qiao Yi, Xu Wei-Xin 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 79-82. article doi:10.7498/aps.50.79 10.7498/aps.50.79 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.79 79-82 <![CDATA[INFLUENCE OF SUBSTRATES ON THE FORMATION OF c-BN THIN FILMS]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.83 Author(s): CHEN GUANG-HUA, DENG JIN-XIANG, ZHANG SHENG-JUN, SONG XUE-MEI, WANG BO, YAN HUI <br/><p>The influence of substrates on the formation of cubic boron nitride(c-BN) thin films was reported. The c-BN thin films were deposited on different substrates with hot-filament-assisted plasma CVD and RF sputter. In the CVD method‚, NH&lt;sub&lt;3‚&lt;/sub&lt;,B&lt;sub&lt;2&lt;/sub&lt;H&lt;sub&lt;6&lt;/sub&lt; and H&lt;sub&lt;2&lt;/sub&lt; were reacting gases‚ and Si‚,Ni‚,Co‚,stainless steel and other materials were substrates. The experiments showed that the cubic phase content in c-BN thin films was affected by substrates. The film on Ni substrate was the best among all the substrates in the CVD method‚, and its cubic phase content reached over 80%. Our study also found that in the CVD method a Ni interlayer on the Si substrate can improve the quality of the c-BN thin films than directly on Si substrate. In the sputter method‚, the working gas was N&lt;sub&lt;2&lt;/sub&lt; and Ar‚, hot-pressed hexagonal boron nitride(h-BN) of 4N purity was used as sputtering target‚, the c-BN thin film with over 90% content of cubic phase was successively deposited on Si substrate. In our research‚, the boron nitride thin films were characterized by Fourier Transform Infrared(FTIR) Spectra and X-ray diffraction.Finally we concluded that for CVD method the cubic phase content and adhesion are highly affected by the crystal lattice mismatch between c-BN and substrate materials; however‚, for sputter method the crystal lattice mismatch between c-BN and substrate materials little affects the quality of c-BN thin films.</p> <br/>Acta Physica Sinica. 2001 50(1): 83-87. Published Author(s): CHEN GUANG-HUA, DENG JIN-XIANG, ZHANG SHENG-JUN, SONG XUE-MEI, WANG BO, YAN HUI <br/><p>The influence of substrates on the formation of cubic boron nitride(c-BN) thin films was reported. The c-BN thin films were deposited on different substrates with hot-filament-assisted plasma CVD and RF sputter. In the CVD method‚, NH&lt;sub&lt;3‚&lt;/sub&lt;,B&lt;sub&lt;2&lt;/sub&lt;H&lt;sub&lt;6&lt;/sub&lt; and H&lt;sub&lt;2&lt;/sub&lt; were reacting gases‚ and Si‚,Ni‚,Co‚,stainless steel and other materials were substrates. The experiments showed that the cubic phase content in c-BN thin films was affected by substrates. The film on Ni substrate was the best among all the substrates in the CVD method‚, and its cubic phase content reached over 80%. Our study also found that in the CVD method a Ni interlayer on the Si substrate can improve the quality of the c-BN thin films than directly on Si substrate. In the sputter method‚, the working gas was N&lt;sub&lt;2&lt;/sub&lt; and Ar‚, hot-pressed hexagonal boron nitride(h-BN) of 4N purity was used as sputtering target‚, the c-BN thin film with over 90% content of cubic phase was successively deposited on Si substrate. In our research‚, the boron nitride thin films were characterized by Fourier Transform Infrared(FTIR) Spectra and X-ray diffraction.Finally we concluded that for CVD method the cubic phase content and adhesion are highly affected by the crystal lattice mismatch between c-BN and substrate materials; however‚, for sputter method the crystal lattice mismatch between c-BN and substrate materials little affects the quality of c-BN thin films.</p> <br/>Acta Physica Sinica. 2001 50(1): 83-87. Published INFLUENCE OF SUBSTRATES ON THE FORMATION OF c-BN THIN FILMS CHEN GUANG-HUA, DENG JIN-XIANG, ZHANG SHENG-JUN, SONG XUE-MEI, WANG BO, YAN HUI Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 83-87. article doi:10.7498/aps.50.83 10.7498/aps.50.83 Acta Physica Sinica 50 1 //www.getgobooth.com/en/article/doi/10.7498/aps.50.83 83-87 <![CDATA[THE GEOMETRY AND ELECTRONIC PROPERTIES OF NiAl]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.95 Author(s): SHEN HAN-XIN, ZHU ZI-ZHONG, HUANG MEI-CHUN <br/><p>An ab initio method with mixed-basis norm-conserving non-local pseudopotential has been employed to study the geometry and electronic properties of transition metal aluminide NiAl. The structure-energy phase diagram, band structure, electronic density of states and valence electron charge density contours have been show n. T he crystal structure, lattice constant, bulk modulus and band structures obtained by our calculation are in good agreement with other theoretical results and experimental data.</p> <br/>Acta Physica Sinica. 2001 50(1): 95-98. Published Author(s): SHEN HAN-XIN, ZHU ZI-ZHONG, HUANG MEI-CHUN <br/><p>An ab initio method with mixed-basis norm-conserving non-local pseudopotential has been employed to study the geometry and electronic properties of transition metal aluminide NiAl. The structure-energy phase diagram, band structure, electronic density of states and valence electron charge density contours have been show n. T he crystal structure, lattice constant, bulk modulus and band structures obtained by our calculation are in good agreement with other theoretical results and experimental data.</p> <br/>Acta Physica Sinica. 2001 50(1): 95-98. Published THE GEOMETRY AND ELECTRONIC PROPERTIES OF NiAl SHEN HAN-XIN, ZHU ZI-ZHONG, HUANG MEI-CHUN Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 95-98. article doi:10.7498/aps.50.95 10.7498/aps.50.95 Acta Physica Sinica 50 1 //www.getgobooth.com/en/article/doi/10.7498/aps.50.95 95-98 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.88 Author(s): Xu yi, Pan Zhen-Ying, Wang Yue-Xia <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 88-94. Published 2006-12-22 Author(s): Xu yi, Pan Zhen-Ying, Wang Yue-Xia <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 88-94. Published 2006-12-22 Xu yi, Pan Zhen-Ying, Wang Yue-Xia 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 88-94. article doi:10.7498/aps.50.88 10.7498/aps.50.88 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.88 88-94 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.99 Author(s): TIAN QIANG <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 99-101. Published 2006-12-22 Author(s): TIAN QIANG <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 99-101. Published 2006-12-22 TIAN QIANG 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 99-101. article doi:10.7498/aps.50.99 10.7498/aps.50.99 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.99 99-101 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.102 Author(s): LIU HONG-WEN, LIU SAI-JIN, HOU SHI-MIN, LIU WEI-MIN, XUE ZENG-QUAN, WU JIN-LEI, SHI ZU-JIN, GU ZHEN-NAN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 102-104. Published 2006-12-22 Author(s): LIU HONG-WEN, LIU SAI-JIN, HOU SHI-MIN, LIU WEI-MIN, XUE ZENG-QUAN, WU JIN-LEI, SHI ZU-JIN, GU ZHEN-NAN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 102-104. Published 2006-12-22 LIU HONG-WEN, LIU SAI-JIN, HOU SHI-MIN, LIU WEI-MIN, XUE ZENG-QUAN, WU JIN-LEI, SHI ZU-JIN, GU ZHEN-NAN 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 102-104. article doi:10.7498/aps.50.102 10.7498/aps.50.102 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.102 102-104 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.106 Author(s): DENG BING-CHENG, CHEN YING, XU GENG, CHEN WEN-HUA, HE YONG-JIAN, XIE MAO-HAI, TANG SHU-XIAN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 106-110. Published 2006-12-22 Author(s): DENG BING-CHENG, CHEN YING, XU GENG, CHEN WEN-HUA, HE YONG-JIAN, XIE MAO-HAI, TANG SHU-XIAN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 106-110. Published 2006-12-22 DENG BING-CHENG, CHEN YING, XU GENG, CHEN WEN-HUA, HE YONG-JIAN, XIE MAO-HAI, TANG SHU-XIAN 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 106-110. article doi:10.7498/aps.50.106 10.7498/aps.50.106 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.106 106-110 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.111 Author(s): MIU ZHONG-LIN, CHEN PING-PING, LU WEI, XU WEN-LAN, LI ZHI-FENG, CAI WEI-YING <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 111-115. Published 2006-12-22 Author(s): MIU ZHONG-LIN, CHEN PING-PING, LU WEI, XU WEN-LAN, LI ZHI-FENG, CAI WEI-YING <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 111-115. Published 2006-12-22 MIU ZHONG-LIN, CHEN PING-PING, LU WEI, XU WEN-LAN, LI ZHI-FENG, CAI WEI-YING 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 111-115. article doi:10.7498/aps.50.111 10.7498/aps.50.111 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.111 111-115 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.116 Author(s): MIU ZHONG-LIN, CHEN PING-PING, CAI WEI-YING, LI ZHI-FENG, XU WEN-LAN, YUAN XIAN-ZHANG, LIU PING, SHI GUO-LIANG, CHEN CHANG-MING, ZHU DE-ZHANG, PAN HAO-CHANG, HU JUN, LI MING-QIAN, LU WEI <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 116-119. Published 2006-12-22 Author(s): MIU ZHONG-LIN, CHEN PING-PING, CAI WEI-YING, LI ZHI-FENG, XU WEN-LAN, YUAN XIAN-ZHANG, LIU PING, SHI GUO-LIANG, CHEN CHANG-MING, ZHU DE-ZHANG, PAN HAO-CHANG, HU JUN, LI MING-QIAN, LU WEI <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 116-119. Published 2006-12-22 MIU ZHONG-LIN, CHEN PING-PING, CAI WEI-YING, LI ZHI-FENG, XU WEN-LAN, YUAN XIAN-ZHANG, LIU PING, SHI GUO-LIANG, CHEN CHANG-MING, ZHU DE-ZHANG, PAN HAO-CHANG, HU JUN, LI MING-QIAN, LU WEI 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 116-119. article doi:10.7498/aps.50.116 10.7498/aps.50.116 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.116 116-119 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.120 Author(s): HAO YUE, ZHU JIAN-GANG, GUO LIN, ZHANG ZHENG-FAN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 120-125. Published 2006-12-22 Author(s): HAO YUE, ZHU JIAN-GANG, GUO LIN, ZHANG ZHENG-FAN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 120-125. Published 2006-12-22 HAO YUE, ZHU JIAN-GANG, GUO LIN, ZHANG ZHENG-FAN 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 120-125. article doi:10.7498/aps.50.120 10.7498/aps.50.120 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.120 120-125 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.126 Author(s): YANG HONG-SHUN, WANG YU-HANGH, LI PENG-CHENG, CHAI YI-CHENG, HOU BI-HUI, CAO LIE-ZHAO <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 126-131. Published 2006-12-22 Author(s): YANG HONG-SHUN, WANG YU-HANGH, LI PENG-CHENG, CHAI YI-CHENG, HOU BI-HUI, CAO LIE-ZHAO <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 126-131. Published 2006-12-22 YANG HONG-SHUN, WANG YU-HANGH, LI PENG-CHENG, CHAI YI-CHENG, HOU BI-HUI, CAO LIE-ZHAO 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 126-131. article doi:10.7498/aps.50.126 10.7498/aps.50.126 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.126 126-131 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.132 Author(s): TANG CHENG-CHUN, WU GUANG-HENG, LI YANG-XIAN, ZHAN WEN-SHAN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 132-138. Published 2006-12-22 Author(s): TANG CHENG-CHUN, WU GUANG-HENG, LI YANG-XIAN, ZHAN WEN-SHAN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 132-138. Published 2006-12-22 TANG CHENG-CHUN, WU GUANG-HENG, LI YANG-XIAN, ZHAN WEN-SHAN 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 132-138. article doi:10.7498/aps.50.132 10.7498/aps.50.132 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.132 132-138 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.139 Author(s): CHENG WEN-HAO, LI WEI, LI CHUAN-JIAN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 139-143. Published 2006-12-22 Author(s): CHENG WEN-HAO, LI WEI, LI CHUAN-JIAN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 139-143. Published 2006-12-22 CHENG WEN-HAO, LI WEI, LI CHUAN-JIAN 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 139-143. article doi:10.7498/aps.50.139 10.7498/aps.50.139 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.139 139-143 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.144 Author(s): TAN DONG-HUAN, PENG YONG, WANG CHENG-WEI, LI HU-LIN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 144-148. Published 2006-12-22 Author(s): TAN DONG-HUAN, PENG YONG, WANG CHENG-WEI, LI HU-LIN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 144-148. Published 2006-12-22 TAN DONG-HUAN, PENG YONG, WANG CHENG-WEI, LI HU-LIN 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 144-148. article doi:10.7498/aps.50.144 10.7498/aps.50.144 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.144 144-148 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.149 Author(s): GE SHI-HUI, LI CHAO, MA XIAO, LI WEI, LI CHENG-XIAN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 149-152. Published 2006-12-22 Author(s): GE SHI-HUI, LI CHAO, MA XIAO, LI WEI, LI CHENG-XIAN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 149-152. Published 2006-12-22 GE SHI-HUI, LI CHAO, MA XIAO, LI WEI, LI CHENG-XIAN 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 149-152. article doi:10.7498/aps.50.149 10.7498/aps.50.149 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.149 149-152 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.153 Author(s): ZHOU YUN-SONG, JIE DONG, CHEN JIN-CHANG, LIN DUO-LIANG <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 153-158. Published 2006-12-22 Author(s): ZHOU YUN-SONG, JIE DONG, CHEN JIN-CHANG, LIN DUO-LIANG <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 153-158. Published 2006-12-22 ZHOU YUN-SONG, JIE DONG, CHEN JIN-CHANG, LIN DUO-LIANG 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 153-158. article doi:10.7498/aps.50.153 10.7498/aps.50.153 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.153 153-158 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.159 Author(s): ZHOU XUN, LIANG BING-QING, WANG HAI, LIU HONG-WEN, ZHANG ZHEN-RONG, FAN JIN-HUA, JI SHI-YIN, CHEN LIANG-RAO, HAN BAO-SHAN, WANG YIN-JUN, TANG YUN-JUN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 159-163. Published 2006-12-22 Author(s): ZHOU XUN, LIANG BING-QING, WANG HAI, LIU HONG-WEN, ZHANG ZHEN-RONG, FAN JIN-HUA, JI SHI-YIN, CHEN LIANG-RAO, HAN BAO-SHAN, WANG YIN-JUN, TANG YUN-JUN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 159-163. Published 2006-12-22 ZHOU XUN, LIANG BING-QING, WANG HAI, LIU HONG-WEN, ZHANG ZHEN-RONG, FAN JIN-HUA, JI SHI-YIN, CHEN LIANG-RAO, HAN BAO-SHAN, WANG YIN-JUN, TANG YUN-JUN 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 159-163. article doi:10.7498/aps.50.159 10.7498/aps.50.159 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.159 159-163 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.164 Author(s): XIAO ZHI-FEI, XU FEI, ZHANG TONG-HE, CHENG GUO-AN, GU LAN-LAN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 164-168. Published 2006-12-22 Author(s): XIAO ZHI-FEI, XU FEI, ZHANG TONG-HE, CHENG GUO-AN, GU LAN-LAN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 164-168. Published 2006-12-22 XIAO ZHI-FEI, XU FEI, ZHANG TONG-HE, CHENG GUO-AN, GU LAN-LAN 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 164-168. article doi:10.7498/aps.50.164 10.7498/aps.50.164 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.164 164-168 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.169 Author(s): DENG SHI-HU, WANG SONG-YOU, LI JING, LIU ZHU, CHEN YUE-LI, YANG YUE-MEI, CHEN LIANG-RAO, LIU HUI, ZHANG XI-XIANG <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 169-174. Published 2006-12-22 Author(s): DENG SHI-HU, WANG SONG-YOU, LI JING, LIU ZHU, CHEN YUE-LI, YANG YUE-MEI, CHEN LIANG-RAO, LIU HUI, ZHANG XI-XIANG <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 169-174. Published 2006-12-22 DENG SHI-HU, WANG SONG-YOU, LI JING, LIU ZHU, CHEN YUE-LI, YANG YUE-MEI, CHEN LIANG-RAO, LIU HUI, ZHANG XI-XIANG 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 169-174. article doi:10.7498/aps.50.169 10.7498/aps.50.169 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.169 169-174 <![CDATA[]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.175 Author(s): WU GUANG-MING, WANG YU, SHEN JUN, YANG TIAN-HE, ZHANG QING-YUAN, ZHOU BIN, DENG ZHONG-SHENG, FAN BIN, ZHOU DONG-PING, ZHANG FENG-SHAN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 175-181. Published 2006-12-22 Author(s): WU GUANG-MING, WANG YU, SHEN JUN, YANG TIAN-HE, ZHANG QING-YUAN, ZHOU BIN, DENG ZHONG-SHENG, FAN BIN, ZHOU DONG-PING, ZHANG FENG-SHAN <br/><p></p> <br/>Acta Physica Sinica. 2001 50(1): 175-181. Published 2006-12-22 WU GUANG-MING, WANG YU, SHEN JUN, YANG TIAN-HE, ZHANG QING-YUAN, ZHOU BIN, DENG ZHONG-SHENG, FAN BIN, ZHOU DONG-PING, ZHANG FENG-SHAN 2006-12-22 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 175-181. article doi:10.7498/aps.50.175 10.7498/aps.50.175 Acta Physica Sinica 50 1 2006-12-22 //www.getgobooth.com/en/article/doi/10.7498/aps.50.175 175-181 <![CDATA[ON THE FORMATION OF THE STREAMWISE VORTEX IN A TRANSITIONAL BOUNDARY LAYER]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.182 Author(s): LI CUN-BIAO <br/><p>The process for the formation of the streamwise vortex in a transitional boundary layer is described. A new instability of the vortex tube has been found which can be used to describe the formation of the streamwise vortices. To the author's knowledge‚ the present results have not been reported before.</p> <br/>Acta Physica Sinica. 2001 50(1): 182-184. Published Author(s): LI CUN-BIAO <br/><p>The process for the formation of the streamwise vortex in a transitional boundary layer is described. A new instability of the vortex tube has been found which can be used to describe the formation of the streamwise vortices. To the author's knowledge‚ the present results have not been reported before.</p> <br/>Acta Physica Sinica. 2001 50(1): 182-184. Published ON THE FORMATION OF THE STREAMWISE VORTEX IN A TRANSITIONAL BOUNDARY LAYER LI CUN-BIAO Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 182-184. article doi:10.7498/aps.50.182 10.7498/aps.50.182 Acta Physica Sinica 50 1 //www.getgobooth.com/en/article/doi/10.7498/aps.50.182 182-184 <![CDATA[IMPROVEMENT IN ELECTRICAL PROPERTIES OF SIMNI FILMS BY MULTIPLE-STEPS IMPLANTATION]]> //www.getgobooth.com/en/article/doi/10.7498/aps.50.185 Author(s): LU DIAN-TONG, HUANG DONG, HEINER RYSSEL <br/><p>SOI-SIMNI (Silicon On Insulator-Separation by Implanted Nitrogen) films were formed by standard and multiplestep implantation methods. The Hal-l effects measurements (4-300K) show that the multiple-step implanted SIMNI films have a lower sheet resistance and higher carrier mobility than those in standard SIMNI films. The DLTS results indicated that there is a deep level defects &lt;em&lt;E&lt;/em&lt;&lt;sub&lt;t&lt;/sub&lt;=0.152eV in the standard SIMNI films‚, and no deep level defects in the multiple-step implanted SIMNI films‚, which have good electrical properties.</p> <br/>Acta Physica Sinica. 2001 50(1): 185-188. Published Author(s): LU DIAN-TONG, HUANG DONG, HEINER RYSSEL <br/><p>SOI-SIMNI (Silicon On Insulator-Separation by Implanted Nitrogen) films were formed by standard and multiplestep implantation methods. The Hal-l effects measurements (4-300K) show that the multiple-step implanted SIMNI films have a lower sheet resistance and higher carrier mobility than those in standard SIMNI films. The DLTS results indicated that there is a deep level defects &lt;em&lt;E&lt;/em&lt;&lt;sub&lt;t&lt;/sub&lt;=0.152eV in the standard SIMNI films‚, and no deep level defects in the multiple-step implanted SIMNI films‚, which have good electrical properties.</p> <br/>Acta Physica Sinica. 2001 50(1): 185-188. Published IMPROVEMENT IN ELECTRICAL PROPERTIES OF SIMNI FILMS BY MULTIPLE-STEPS IMPLANTATION LU DIAN-TONG, HUANG DONG, HEINER RYSSEL Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 2001 50(1): 185-188. article doi:10.7498/aps.50.185 10.7498/aps.50.185 Acta Physica Sinica 50 1 //www.getgobooth.com/en/article/doi/10.7498/aps.50.185 185-188
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