Structural and electrical properties of vanadium-doped bilayer MoS<sub>2</sub>

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ZHANG Qing; YANG Zhen; HAN Shujun; LIU Keke; WANG Xinyu; SU Xianli; ZHANG Qingjie; TANG Xinfeng

doi:10.7498/aps.75.20251535

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ZHANG Qing, YANG Zhen, HAN Shujun, LIU Keke, WANG Xinyu, SU Xianli, ZHANG Qingjie, TANG Xinfeng. Structural and electrical properties of vanadium-doped bilayer MoS2J. Acta Physica Sinica, 2026, 75(8): 080714. DOI: 10.7498/aps.75.20251535

Citation:

ZHANG Qing, YANG Zhen, HAN Shujun, LIU Keke, WANG Xinyu, SU Xianli, ZHANG Qingjie, TANG Xinfeng. Structural and electrical properties of vanadium-doped bilayer MoS2J. Acta Physica Sinica, 2026, 75(8): 080714. DOI: 10.7498/aps.75.20251535

Citation:

ZHANG Qing, YANG Zhen, HAN Shujun, LIU Keke, WANG Xinyu, SU Xianli, ZHANG Qingjie, TANG Xinfeng. Structural and electrical properties of vanadium-doped bilayer MoS2J. Acta Physica Sinica, 2026, 75(8): 080714. DOI: 10.7498/aps.75.20251535