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中国物理学会期刊
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    Preface to the special topic: Semiconductor physics and devices
    WANG Kaiyou, HUANG Sen
    2026, 75(8): 089001. DOI: 10.7498/aps.75.089001
    Abstract PDF
    Phase fields in momentum space of photonic crystal slabs
    LI Chuanlin, REN Aobo, WU Jiang
    2026, 75(8): 080402. DOI: 10.7498/aps.75.20260100
    Abstract PDF
    Development and frontiers of the theory on non-radiative multi-phonon transitions: From physical insights to first-principles calculations
    YUAN Jiayi, ZHANG Chen, CUI Yu, DENG Huixiong
    2026, 75(8): 080701. DOI: 10.7498/aps.75.20251621
    Abstract PDF
    Nitrogen-vacancy centers in diamond: From fundamental principles to quantum sensing
    LI Yuehui, CHENG Shaobo, SHAN Chongxin
    2026, 75(8): 080702. DOI: 10.7498/aps.75.20251531
    Abstract PDF
    Vertical GaN power electronic devices: Structure, fabrication, and key mechanisms
    WANG Juntai, HAN Zaitian, DU Jiahong, XIE Xuan, YANG Shu
    2026, 75(8): 080703. DOI: 10.7498/aps.75.20251638
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    Development and application of bipolar response in two dimensional material based photodetectors
    HAN Jiayue, WANG Jun
    2026, 75(8): 080704. DOI: 10.7498/aps.75.20251589
    Abstract PDF
    Spin relaxation of carriers in two-dimensional quantum structures of III-V semiconductors
    WANG Yifan, ZHANG Shixiong, CHEN Shuaiyu, CHEN Zijie, YANG Xuelin, XU Fujun, WANG Xinqiang, GE Weikun, SHEN Bo, TANG Ning
    2026, 75(8): 080705. DOI: 10.7498/aps.75.20251608
    Abstract PDF
    A review of the research and development of high-frequency, high-power gallium nitride radio-frequency electronic devices
    REN Weiyu, CHANG Zhijie, LV Tao, HOU Bin, WU Mei, ZHANG Meng, LU Hao, YANG Ling, MA Xiaohua, HAO Yue
    2026, 75(8): 080706. DOI: 10.7498/aps.75.20251631
    Abstract PDF
    Research progress on scaling technology of amorphous indium gallium zinc oxide thin-film transistors
    HAN Yuenan, YANG Guanhua, LU Nianduan, LI Ling
    2026, 75(8): 080801. DOI: 10.7498/aps.75.20251737
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    Gallium nitride power integration
    XU Yunsong, JI Haotian, WANG Haoyu, QIU Hengzhi, GONG Ruiqi, DING Shenlei, JIANG Yunzhou, GU Jiangmin, LI Ang, WEI Jin, LIU Wen
    2026, 75(8): 080802. DOI: 10.7498/aps.75.20260273
    Abstract PDF
    Device fabrication and performance characterization of planar long-cavity GaN-based vertical-cavity surface-emitting lasers
    ZHU Zhuangzhuang, FENG Meixin, LI Chuanjie, ZHANG Shuming, SUN Qian, YANG Hui
    2026, 75(8): 080401. DOI: 10.7498/aps.75.20260069
    Abstract PDF
    Characterization of band discontinuity in InGaSb/AlGaAsSb quantum well lasers based on deep level transient spectroscopy
    CHEN Yihang, SHI Jianmei, GENG Zhengqi, CAO Juntian, WEN Haoran, ZHANG Enquan, LI Zongyi, ZHONG Yunxiang, ZHANG Qizhi, WU Donghai, XU Yingqiang, NI Haiqiao, YANG Chengao, NIU Zhichuan
    2026, 75(8): 080403. DOI: 10.7498/aps.75.20251699
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    Tunneling magnetoresistance in a simplified bilayer tunnel junction based on altermagnetic spin splitting
    XU Yibo, YE Maoxuan, CHEN Jiayou, YANG Wei, LIN Xiaoyang, ZHAO Weisheng
    2026, 75(8): 080707. DOI: 10.7498/aps.75.20251642
    Abstract PDF
    Mechanism of GaN high electron mobility transistor interface engineering in enhancing high-temperature and dynamic bias reliability
    WAN Ziyan, ZHANG Haoran, LI Xiao, NING Jing, HAO Yue, ZHANG Jincheng
    2026, 75(8): 080708. DOI: 10.7498/aps.75.20251629
    Abstract PDF
    Heavy ion irradiation effects in low-voltage p-GaN high-electron-mobility transistors
    YANG Fukang, ZHU Jianggen, WU Keping, LIU Wenzheng, GAO Huan, ZHOU Chunhua, ZHANG Bo, ZHOU Qi
    2026, 75(8): 080709. DOI: 10.7498/aps.75.20251571
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    Strain and structural modulation of thermal conductivity in AlN/GaN superlattices via machine learning force fields
    HAN Peng, ZANG Hang, YU Yan, ZHANG Feng, ZHOU Nuodan, SHI Zhiming, SUN Xiaojuan, LI Dabing
    2026, 75(8): 080710. DOI: 10.7498/aps.75.20251623
    Abstract PDF
    Reliability of Schottky-type p-GaN high-electron-mobility transistors under surge current stress
    PENG Rong, QIU Binju, HUANG Shuting, WANG Long, ZHANG Bo, ZHOU Qi
    2026, 75(8): 080803. DOI: 10.7498/aps.75.20251573
    Abstract PDF
    Process optimization and validation of the polysilicon grain-boundary barrier for high-accuracy 3-dimensional NAND compute-in-memory chips
    ZHENG Hao, LIU Huiwen, XU Kezhi, ZHANG Baotong, YANG Yuancheng, XIA Zhiliang, HUO Zongliang
    2026, 75(8): 080804. DOI: 10.7498/aps.75.20260199
    Abstract PDF
    Fabrication and properties of slanted-channel GaN-based p-type transistors via regrown heterostructure
    YANG Yang, HUANG Sen, FU Xingyu, GUO Fuqiang, YAO Yixu, DENG Kexin, LIU Jianfei, WANG Xinhua, GAO Xinguo, WEI Ke, LIU Xinyu, YANG Xuelin, SHEN Bo
    2026, 75(8): 080805. DOI: 10.7498/aps.75.20260336
    Abstract PDF
    Superradiant phase transition of Fermi gases in an optical cavity in different spatial dimensions
    WEN Lin, HUANG Yihan, QIU Xu, YANG Mingyue
    2026, 75(8): 080301. DOI: 10.7498/aps.75.20260194
    Abstract PDF
    Propagation dynamics of noncanonical vortex points in complex optical fields
    CHENG Jing, KAN Xuefen, SUN Xiaoya, SHAN Minglei, YIN Cheng
    2026, 75(8): 080404. DOI: 10.7498/aps.75.20251713
    Abstract PDF
    Design of operational scenarios for high fusion triple product in the HL-3 tokamak
    LI Zhengji, CHEN Wei, HAO Guangzhou, SONG Xiao, ZHU Yiren, LI Jiquan, LI Jiaxian, DU Hailong, ZHANG Yiheng, ZHAO Yifei, DONG Guanqi, ZHAO Hanzhi, SHI Yongfu, SUN Aiping, WANG Zhe, WANG Zhuo
    2026, 75(8): 080501. DOI: 10.7498/aps.75.20251756
    Abstract PDF
    Fault-tolerant universal quantum computation via surface code conversion
    QUAN Dongxiao, WANG Zhenli, CHENG Longxiang
    2026, 75(8): 080601. DOI: 10.7498/aps.75.20251344
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    A model for describing van der Waals force in the presence of medium
    WEN Ting, WANG Zenghui
    2026, 75(8): 080711. DOI: 10.7498/aps.75.20260426
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    Intrinsic half-metallicity and magnetic properties of two-dimensional ferromagnetic material Mn2AsSb
    YUAN Jun, WANG Fanfan, ZHANG Zhufeng, XU Wenwu, GU Chenjie, ZHOU Jun
    2026, 75(8): 080712. DOI: 10.7498/aps.75.20251622
    Abstract PDF
    Electrical properties of low background concentration HgCdTe for fully depleted structure
    SHEN Chuan, ZHANG Juan, ZHOU Meihua, WANG Ying, BU Shundong, CHEN Lu, HE Li
    2026, 75(8): 080713. DOI: 10.7498/aps.75.20251437
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    Structural and electrical properties of vanadium-doped bilayer MoS2
    ZHANG Qing, YANG Zhen, HAN Shujun, LIU Keke, WANG Xinyu, SU Xianli, ZHANG Qingjie, TANG Xinfeng
    2026, 75(8): 080714. DOI: 10.7498/aps.75.20251535
    Abstract PDF
    Electron-phonon coupling superconductivity in one-dimensional M6Q6 (M = Mo, W; Q = S, Se, Te) nanowires
    ZHENG Jingjing, YANG Jinwen, MA Rongrong, YUAN Zhihong, LI Jingyu, LIU Pengfei, MA Jiangjiang
    2026, 75(8): 080715. DOI: 10.7498/aps.75.20251790
    Abstract PDF
    First-principles study on the ultra-low lattice thermal conductivity and excellent thermoelectric properties of the quasi-one-dimensional Bi4RuI2
    LEI Wen, LI Xinyi, XIAO Feng, SONG Xinyu, WANG Jinpeng, GUO Zhenhao, MING Xing
    2026, 75(8): 080806. DOI: 10.7498/aps.75.20251736
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    Effect of alloying element Al on the microstructure and properties of Pb-Ag alloy anodes
    ZHANG Yuhang, HAN Binghao, JIANG Hongxiang, ZHANG Lili, ZHAO Jiuzhou, HE Jie
    2026, 75(8): 080807 . DOI: 10.7498/aps.75.20251783
    Abstract PDF
    Experimental study on the total dose effect of light-controlled metal oxide semiconductor solid-state relays
    HE Zijie, ZHU Xuewei, LI Zongya, ZHUANG Cheng, HE Chaohui, LI Pei, MA Baolong
    2026, 75(8): 080808. DOI: 10.7498/aps.75.20251714
    Abstract PDF
    Influence of charge compensation mechanism on the piezoelectric properties and relaxor behavior of europium-doped lead magnesium niobate-lead titanate ceramics
    YANG Jing, WANG Wenjun, LIU Yiying, ZHANG Tao, ZHU Huaze, LI Min, YU Runsheng, CAO Xingzhong, WANG Baoyi
    2026, 75(8): 080809. DOI: 10.7498/aps.75.20251665
    Abstract PDF
    Redundancy hardening design for single event upset tolerance in a dual interlocked storage cell flip-flop
    LIU Ye, GUO Hongxia, ZHANG Hong, LIU Xiangyuan, DING Lili, LIU Zeteng, LAI Shankun, LI Yunfei
    2026, 75(8): 080810. DOI: 10.7498/aps.75.20251574
    Abstract PDF
    Synergistic regulation of Cu rich phase precipitation by dislocation loops and aging temperature using phase field method
    SUN Wenjing, YANG Wenkui, HOU Hua, ZHAO Yuhong
    2026, 75(8): 080811. DOI: 10.7498/aps.75.20260121
    Abstract PDF
    Reduced order reconstruction method of lithium ion battery electrochemical model based on improved liquid simplified pseudo-two-dimensions
    DONG Zeqing, ZHANG Yangang, JIA Zihou, HUANG Zhendong
    2026, 75(8): 080901. DOI: 10.7498/aps.75.20260060
    Abstract PDF
    Design and verification of tunable acoustic field devices based on low additional phase delay acoustic metamaterials and Moiré effect
    MENG Xiangyan, ZHANG Shaoji, PENG Yugui, WU Peng, LUO Jiajie, ZHANG Mangong, YU Xingbo, LI Qiaojiao, SONG Bo
    2026, 75(8): 081001. DOI: 10.7498/aps.75.20251697
    Abstract PDF
    High-efficiency ultra-low frequency electrodynamic transducer based on multi-vibrator mutual radiation
    ZHANG Yishuang, SANG Yongjie, CHEN Yongyao, WANG Chunying, CAO Wenwu
    2026, 75(8): 081002. DOI: 10.7498/aps.75.20251723
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    A miniaturized ultrasonic scalpel based on acoustic black hole and Moonie transducer structures
    CHEN Cheng, CHEN Huiqin, XU Chunlong, GUO Jianzhong, LIN Shuyu
    2026, 75(8): 081003. DOI: 10.7498/aps.75.20251458
    Abstract PDF
    Erratum: Microstructure and electrical properties of Ni-Fe-B-Si-P amorphous alloys controlled by near-supercooled liquid-phase annealing
    FENG Rui, ZHANG Zhongyi, CHEN Chunhua, SHANG Bolin, LI Dongmei, YU Peng
    2026, 75(8): 089901. DOI: 10.7498/aps.75.089901
    Abstract PDF

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