Reliability of Schottky-type p-GaN high-electron-mobility transistors under surge current stress

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PENG Rong; QIU Binju; HUANG Shuting; WANG Long; ZHANG Bo; ZHOU Qi

doi:10.7498/aps.75.20251573

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PENG Rong, QIU Binju, HUANG Shuting, WANG Long, ZHANG Bo, ZHOU Qi. Reliability of Schottky-type p-GaN high-electron-mobility transistors under surge current stressJ. Acta Physica Sinica, 2026, 75(8): 080803. DOI: 10.7498/aps.75.20251573

Citation:

PENG Rong, QIU Binju, HUANG Shuting, WANG Long, ZHANG Bo, ZHOU Qi. Reliability of Schottky-type p-GaN high-electron-mobility transistors under surge current stressJ. Acta Physica Sinica, 2026, 75(8): 080803. DOI: 10.7498/aps.75.20251573

Citation:

PENG Rong, QIU Binju, HUANG Shuting, WANG Long, ZHANG Bo, ZHOU Qi. Reliability of Schottky-type p-GaN high-electron-mobility transistors under surge current stressJ. Acta Physica Sinica, 2026, 75(8): 080803. DOI: 10.7498/aps.75.20251573