A review of the research and development of high-frequency, high-power gallium nitride radio-frequency electronic devices

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REN Weiyu; CHANG Zhijie; LV Tao; HOU Bin; WU Mei; ZHANG Meng; LU Hao; YANG Ling; MA Xiaohua; HAO Yue

doi:10.7498/aps.75.20251631

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REN Weiyu, CHANG Zhijie, LV Tao, HOU Bin, WU Mei, ZHANG Meng, LU Hao, YANG Ling, MA Xiaohua, HAO Yue. A review of the research and development of high-frequency, high-power gallium nitride radio-frequency electronic devicesJ. Acta Physica Sinica, 2026, 75(8): 080706. DOI: 10.7498/aps.75.20251631

Citation:

REN Weiyu, CHANG Zhijie, LV Tao, HOU Bin, WU Mei, ZHANG Meng, LU Hao, YANG Ling, MA Xiaohua, HAO Yue. A review of the research and development of high-frequency, high-power gallium nitride radio-frequency electronic devicesJ. Acta Physica Sinica, 2026, 75(8): 080706. DOI: 10.7498/aps.75.20251631

Citation:

REN Weiyu, CHANG Zhijie, LV Tao, HOU Bin, WU Mei, ZHANG Meng, LU Hao, YANG Ling, MA Xiaohua, HAO Yue. A review of the research and development of high-frequency, high-power gallium nitride radio-frequency electronic devicesJ. Acta Physica Sinica, 2026, 75(8): 080706. DOI: 10.7498/aps.75.20251631