Research progress on scaling technology of amorphous indium gallium zinc oxide thin-film transistors

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HAN Yuenan; YANG Guanhua; LU Nianduan; LI Ling

doi:10.7498/aps.75.20251737

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HAN Yuenan, YANG Guanhua, LU Nianduan, LI Ling. Research progress on scaling technology of amorphous indium gallium zinc oxide thin-film transistorsJ. Acta Physica Sinica, 2026, 75(8): 080801. DOI: 10.7498/aps.75.20251737

Citation:

HAN Yuenan, YANG Guanhua, LU Nianduan, LI Ling. Research progress on scaling technology of amorphous indium gallium zinc oxide thin-film transistorsJ. Acta Physica Sinica, 2026, 75(8): 080801. DOI: 10.7498/aps.75.20251737

Citation:

HAN Yuenan, YANG Guanhua, LU Nianduan, LI Ling. Research progress on scaling technology of amorphous indium gallium zinc oxide thin-film transistorsJ. Acta Physica Sinica, 2026, 75(8): 080801. DOI: 10.7498/aps.75.20251737