Heavy ion irradiation effects in low-voltage p-GaN high-electron-mobility transistors

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YANG Fukang; ZHU Jianggen; WU Keping; LIU Wenzheng; GAO Huan; ZHOU Chunhua; ZHANG Bo; ZHOU Qi

doi:10.7498/aps.75.20251571

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YANG Fukang, ZHU Jianggen, WU Keping, LIU Wenzheng, GAO Huan, ZHOU Chunhua, ZHANG Bo, ZHOU Qi. Heavy ion irradiation effects in low-voltage p-GaN high-electron-mobility transistorsJ. Acta Physica Sinica, 2026, 75(8): 080709. DOI: 10.7498/aps.75.20251571

Citation:

YANG Fukang, ZHU Jianggen, WU Keping, LIU Wenzheng, GAO Huan, ZHOU Chunhua, ZHANG Bo, ZHOU Qi. Heavy ion irradiation effects in low-voltage p-GaN high-electron-mobility transistorsJ. Acta Physica Sinica, 2026, 75(8): 080709. DOI: 10.7498/aps.75.20251571

Citation:

YANG Fukang, ZHU Jianggen, WU Keping, LIU Wenzheng, GAO Huan, ZHOU Chunhua, ZHANG Bo, ZHOU Qi. Heavy ion irradiation effects in low-voltage p-GaN high-electron-mobility transistorsJ. Acta Physica Sinica, 2026, 75(8): 080709. DOI: 10.7498/aps.75.20251571