Electrical properties of low background concentration HgCdTe for fully depleted structure

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SHEN Chuan; ZHANG Juan; ZHOU Meihua; WANG Ying; BU Shundong; CHEN Lu; HE Li

doi:10.7498/aps.75.20251437

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SHEN Chuan, ZHANG Juan, ZHOU Meihua, WANG Ying, BU Shundong, CHEN Lu, HE Li. Electrical properties of low background concentration HgCdTe for fully depleted structureJ. Acta Physica Sinica, 2026, 75(8): 080713. DOI: 10.7498/aps.75.20251437

Citation:

SHEN Chuan, ZHANG Juan, ZHOU Meihua, WANG Ying, BU Shundong, CHEN Lu, HE Li. Electrical properties of low background concentration HgCdTe for fully depleted structureJ. Acta Physica Sinica, 2026, 75(8): 080713. DOI: 10.7498/aps.75.20251437

Citation:

SHEN Chuan, ZHANG Juan, ZHOU Meihua, WANG Ying, BU Shundong, CHEN Lu, HE Li. Electrical properties of low background concentration HgCdTe for fully depleted structureJ. Acta Physica Sinica, 2026, 75(8): 080713. DOI: 10.7498/aps.75.20251437