Fabrication and properties of slanted-channel GaN-based p-type transistors via regrown heterostructure

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YANG Yang; HUANG Sen; FU Xingyu; GUO Fuqiang; YAO Yixu; DENG Kexin; LIU Jianfei; WANG Xinhua; GAO Xinguo; WEI Ke; LIU Xinyu; YANG Xuelin; SHEN Bo

doi:10.7498/aps.75.20260336

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YANG Yang, HUANG Sen, FU Xingyu, GUO Fuqiang, YAO Yixu, DENG Kexin, LIU Jianfei, WANG Xinhua, GAO Xinguo, WEI Ke, LIU Xinyu, YANG Xuelin, SHEN Bo. Fabrication and properties of slanted-channel GaN-based p-type transistors via regrown heterostructureJ. Acta Physica Sinica, 2026, 75(8): 080805. DOI: 10.7498/aps.75.20260336

Citation:

YANG Yang, HUANG Sen, FU Xingyu, GUO Fuqiang, YAO Yixu, DENG Kexin, LIU Jianfei, WANG Xinhua, GAO Xinguo, WEI Ke, LIU Xinyu, YANG Xuelin, SHEN Bo. Fabrication and properties of slanted-channel GaN-based p-type transistors via regrown heterostructureJ. Acta Physica Sinica, 2026, 75(8): 080805. DOI: 10.7498/aps.75.20260336

Citation:

YANG Yang, HUANG Sen, FU Xingyu, GUO Fuqiang, YAO Yixu, DENG Kexin, LIU Jianfei, WANG Xinhua, GAO Xinguo, WEI Ke, LIU Xinyu, YANG Xuelin, SHEN Bo. Fabrication and properties of slanted-channel GaN-based p-type transistors via regrown heterostructureJ. Acta Physica Sinica, 2026, 75(8): 080805. DOI: 10.7498/aps.75.20260336