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Deng Wen, Wang Li-Sheng, Liu Jia-Ning, Yu Xue-Ling, Chen Feng-Xiang.Resistive switching behavior and mechanism of multilayer MoS2memtransistor under control of back gate bias and light illumination. Acta Physica Sinica, 2021, 70(21): 217302.doi:10.7498/aps.70.20210750 |
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Guo Ning, Zhou Zhou, Ni Jian, Cai Hong-Kun, Zhang Jian-Jun, Sun Yan-Yan, Li Juan.Thin film transistor based on two-dimensional organic-inorganic hybrid perovskite. Acta Physica Sinica, 2020, 69(19): 198102.doi:10.7498/aps.69.20200701 |
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Wu Xin-Yu, Han Wei-Hua, Yang Fu-Hua.Quantum transport relating to impurity quantum dots in silicon nanostructure transistor. Acta Physica Sinica, 2019, 68(8): 087301.doi:10.7498/aps.68.20190095 |
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Liu Yan-Li, Wang Wei, Dong Yan, Chen Dun-Jun, Zhang Rong, Zheng You-Dou.Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistor. Acta Physica Sinica, 2019, 68(24): 247203.doi:10.7498/aps.68.20191153 |
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Guo Li-Qiang, Tao Jian, Wen Juan, Cheng Guang-Gui, Yuan Ning-Yi, Ding Jian-Ning.Corn starch solid electrolyte gated proton/electron hybrid synaptic transistor. Acta Physica Sinica, 2017, 66(16): 168501.doi:10.7498/aps.66.168501 |
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Guo Chun-Sheng, Li Shi-Wei, Ren Yun-Xiang, Gao Li, Feng Shi-Wei, Zhu Hui.Influence of power dissipation and case temperature on thermal resistance of AlGaN/GaN high-speed electron mobility transistor. Acta Physica Sinica, 2016, 65(7): 077201.doi:10.7498/aps.65.077201 |
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