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Liu Zhe, Wei Hao, Cui Hai-Hang, Sun Kai, Sun Bo-Hua.Analysis of GAAFET’s transient heat transport process based on phonon hydrodynamic equations. Acta Physica Sinica, 2024, 73(14): 144401.doi:10.7498/aps.73.20240491 |
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Jia Xiao-Fei, Wei Qun, Zhang Wen-Peng, He Liang, Wu Zhen-Hua.Analysis of thermal noise characteristics in 10 nm metal oxide semiconductor field effect transistor. Acta Physica Sinica, 2023, 72(22): 227303.doi:10.7498/aps.72.20230661 |
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Song Ming-Xu, Wang Huai-Peng, Sun Yi-Lin, Cai Li, Yang Xiao-Kuo, Xie Dan.Modulation of electrical properties in carbon nanotube field-effect transistors through AuCl3doping. Acta Physica Sinica, 2021, 70(23): 238801.doi:10.7498/aps.70.20211026 |
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Zhu Yu-Bo, Xu Hua, Li Min, Xu Miao, Peng Jun-Biao.Analysis of low frequency noise characteristics of praseodymium doped indium gallium oxide thin film transistor. Acta Physica Sinica, 2021, 70(16): 168501.doi:10.7498/aps.70.20210368 |
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Meng Xian-Cheng, Tian He, An Xia, Yuan Shuo, Fan Chao, Wang Meng-Jun, Zheng Hong-Xing.Field effect transistor photodetector based on two dimensional SnSe2. Acta Physica Sinica, 2020, 69(13): 137801.doi:10.7498/aps.69.20191960 |
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Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan.Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica, 2020, 69(4): 047201.doi:10.7498/aps.69.20190640 |
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Zheng Jia-Jin, Wang Ya-Ru, Yu Ke-Han, Xu Xiang-Xing, Sheng Xue-Xi, Hu Er-Tao, Wei Wei.Field effect transistor photodetector based on graphene and perovskite quantum dots. Acta Physica Sinica, 2018, 67(11): 118502.doi:10.7498/aps.67.20180129 |
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Yang Dan, Zhang Li, Yang Sheng-Yi, Zou Bing-Suo.Low-voltage pentacene photodetector based on a vertical transistor configuration. Acta Physica Sinica, 2015, 64(10): 108503.doi:10.7498/aps.64.108503 |
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Su Li-Na, Gu Xiao-Feng, Qin Hua, Yan Da-Wei.Analytical I-V model and numerical analysis of single electron transistor. Acta Physica Sinica, 2013, 62(7): 077301.doi:10.7498/aps.62.077301 |
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Huo Wen-Juan, Xie Hong-Yun, Liang Song, Zhang Wan-Rong, Jiang Zhi-Yun, Chen Xiang, Lu Dong.Uni-traveling-carrier double heterojunction phototransistor photodetector. Acta Physica Sinica, 2013, 62(22): 228501.doi:10.7498/aps.62.228501 |
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Sui Bing-Cai, Fang Liang, Zhang Chao.Conductance of single-electron transistor with single island. Acta Physica Sinica, 2011, 60(7): 077302.doi:10.7498/aps.60.077302 |
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Wang Lei, Steve Yang.Analysis and modeling of quasi-saturation effect in high-voltage LDMOS transistors. Acta Physica Sinica, 2010, 59(1): 571-578.doi:10.7498/aps.59.571 |
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Wei Wei, Hao Yue, Feng Qian, Zhang Jin-Cheng, Zhang Jin-Feng.Geometrical optimization of AlGaN/GaN field-plate high electron mobility transistor. Acta Physica Sinica, 2008, 57(4): 2456-2461.doi:10.7498/aps.57.2456 |
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