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Zong Zhi-Cheng, Pan Dong-Kai, Deng Shi-Chen, Wan Xiao, Yang Li-Na, Ma Deng-Ke, Yang Nuo.Mixed mismatch model predicted interfacial thermal conductance of metal/semiconductor interface. Acta Physica Sinica, 2023, 72(3): 034401.doi:10.7498/aps.72.20221981 |
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Li Yao-Long, Li Zhe, Li Song-Yuan, Zhang Ren-Liang.Regulation of thermal conductivity of bilayer graphene nanoribbon through interlayer covalent bond and tensile strain. Acta Physica Sinica, 2023, 72(24): 243101.doi:10.7498/aps.72.20231230 |
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Wang Kun, Qiao Ying-Jie, Zhang Xiao-Hong, Wang Xiao-Dong, Zheng Ting, Bai Cheng-Ying, Zhang Yi-Ming, Du Shi-Yu.First-principles study of effect of ideal tensile/shear strain on chemical bond length and charge density distribution of U3Si2. Acta Physica Sinica, 2022, 71(22): 227102.doi:10.7498/aps.71.20221210 |
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Zhang Cun-Bo, Yan Tao, Yang Zhi-Qiang, Ren Wei-Tao, Zhu Zhan-Ping.heoretical model of influence of frequency on thermal breakdown in semiconductor device. Acta Physica Sinica, 2017, 66(1): 018501.doi:10.7498/aps.66.018501 |
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Xiao Xiao-Hong, Li Shi-Chun.The chemical bond properties and ferroelectricity studies of SrBi4Ti4O15. Acta Physica Sinica, 2016, 65(6): 063101.doi:10.7498/aps.65.063101 |
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Li Yu-Chen, Zhang He-Ming, Zhang Yu-Ming, Hu Hui-Yong, Xu Xiao-Bo, Qin Shan-Shan, Wang Guan-Yu.A analytic model for the threshold-voltage of novel high-speed semiconductor device IMOS. Acta Physica Sinica, 2012, 61(4): 047303.doi:10.7498/aps.61.047303 |
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WANG REN-ZHI, HUANG MEI-CHUN.A CPA CALCULATION OF THE LMTO BAND STRUCTURE FOR TETRAHEDRAL BOND SEMICONDUCTOR ALLOYS. Acta Physica Sinica, 1988, 37(10): 1585-1592.doi:10.7498/aps.37.1585 |
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