[1] |
Shang Ji-Hua, Yang Xin-Yu, Sun Da-Peng, Zhang Jiu-Xing.Improvement of barium tungsten cathode and investigation of thermionic emission performance. Acta Physica Sinica, 2022, 71(4): 047901.doi:10.7498/aps.71.20211684 |
[2] |
.Improvement of barium tungsten cathode and investigation of thermionic emission performance. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211684 |
[3] |
Zhang Meng, Yao Ruo-He, Liu Yu-Rong.A channel thermal noise model of nanoscaled metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2020, 69(5): 057101.doi:10.7498/aps.69.20191512 |
[4] |
Zhang Meng, Yao Ruo-He, Liu Yu-Rong, Geng Kui-Wei.Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2020, 69(17): 177102.doi:10.7498/aps.69.20200497 |
[5] |
Liu Hu-Lin, Wang Xing, Tian Jin-Shou, Sai Xiao-Feng, Wei Yong-Lin, Wen Wen-Long, Wang Jun-Feng, Xu Xiang-Yan, Wang Chao, Lu Yu, He Kai, Chen Ping, Xin Li-Wei.High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection. Acta Physica Sinica, 2018, 67(1): 014209.doi:10.7498/aps.67.20171729 |
[6] |
Zhang Fei-Peng, Zhang Jing-Wen, Zhang Jiu-Xing, Yang Xin-Yu, Lu Qing-Mei, Zhang Xin.Effects of Sr doping on electronic and thermoelectrical transport properties of CaMnO3 based oxide. Acta Physica Sinica, 2017, 66(24): 247202.doi:10.7498/aps.66.247202 |
[7] |
Zhang Jing-Shui, Kong Ling-Qin, Dong Li-Quan, Liu Ming, Zuo Jian, Zhang Cun-Lin, Zhao Yue-Jin.Diffusion part in terahertz complementary metal oxide semiconductor transistor detector model. Acta Physica Sinica, 2017, 66(12): 127302.doi:10.7498/aps.66.127302 |
[8] |
Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Wang Guan-Yu.Charge model of strained Si NMOSFET. Acta Physica Sinica, 2014, 63(1): 017101.doi:10.7498/aps.63.017101 |
[9] |
Zhang Min, Wang Xiao-Xia, Luo Ji-Run, Liao Xian-Heng.Preparation and emission characteristic study of plasma-sprayed scandia-doped oxide cathode. Acta Physica Sinica, 2012, 61(7): 077901.doi:10.7498/aps.61.077901 |
[10] |
Cao Lei, Liu Hong-Xia, Wang Guan-Yu.Study of modeling for hetero-materiel gate fully depleted SSDOI MOSFET. Acta Physica Sinica, 2012, 61(1): 017105.doi:10.7498/aps.61.017105 |
[11] |
Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang.A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica, 2012, 61(10): 107803.doi:10.7498/aps.61.107803 |
[12] |
Lu Hong-Yan, Chen San, Liu Bao-Tong.Theoretical research on two gaps in cuprate superconductors:an electronic Raman scattering study. Acta Physica Sinica, 2011, 60(3): 037402.doi:10.7498/aps.60.037402 |
[13] |
Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming.Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2011, 60(1): 017202.doi:10.7498/aps.60.017202 |
[14] |
He Bao-Ping, Yao Zhi-Bin.Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment. Acta Physica Sinica, 2010, 59(3): 1985-1990.doi:10.7498/aps.59.1985 |
[15] |
Bi Zhi-Wei, Feng Qian, Hao Yue, Yue Yuan-Zheng, Zhang Zhong-Fen, Mao Wei, Yang Li-Yuan, Hu Gui-Zhou.Effect of Al2O3 dielectric layer thickness on the AlGaN/GaN metal-oxide-semiconductor higher-electron-mobility transistor characteristics. Acta Physica Sinica, 2009, 58(10): 7211-7215.doi:10.7498/aps.58.7211 |
[16] |
Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua.Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise. Acta Physica Sinica, 2008, 57(8): 5205-5211.doi:10.7498/aps.57.5205 |
[17] |
Yuan Xiao-Hui, Li Yu-Tong, Xu Miao-Hua, Zheng Zhi-Yuan, Liang Wen-Xi, Yu Quan-Zhi, Zhang Yi, Wang Zhao-Hua, Ling Wei-Jun, Wei Zhi-Yi, Zhao Wei, Zhang Jie.Influence of laser incidence angle on hot electrons generated in the interaction of ultrashort intense laser pulses with foil target. Acta Physica Sinica, 2006, 55(11): 5899-5904.doi:10.7498/aps.55.5899 |
[18] |
WANG JIAN-PING, XU NA-JUN, ZHANG TING-QING, TANG HUA-LIAN, LIU JIA-LU, LIU CHUAN -YANG, YAO YU-JUAN, PENG HONG-LUN, HE BAO-PING, ZHANG ZHENG-XUAN.TEMPERATURE EFFECTS OF γ-IRRADIATED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRAN SISTOR. Acta Physica Sinica, 2000, 49(7): 1331-1334.doi:10.7498/aps.49.1331 |
[19] |
ZHANG EN-QIU.ON THE THEORY OF THERMIONIC EMISSION (Ⅲ)——A MODEL OF DYNAMICAL SURFACE EMISSION CENTERS. Acta Physica Sinica, 1976, 25(1): 23-30.doi:10.7498/aps.25.23 |
[20] |
ZHANG EN-QIU.HEORY OF THERMIONIC EMISSION (II)——ON THE MONOATOMIC LAYER AND DIPOLE THEORY. Acta Physica Sinica, 1974, 23(5): 53-63.doi:10.7498/aps.23.53 |