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Zhang Lin, Ma Lin-Dong, Du Lin, Li Yan-Bo, Xu Xian-Feng, Huang Xin-Rong.Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltage. Acta Physica Sinica, 2023, 72(13): 138501.doi:10.7498/aps.72.20230207 |
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Gu Zhao-Qiao, Guo Hong-Xia, Pan Xiao-Yu, Lei Zhi-Feng, Zhang Feng-Qi, Zhang Hong, Ju An-An, Liu Yi-Tian.Total dose effect and annealing characteristics of silicon carbide field effect transistor devices under different stresses. Acta Physica Sinica, 2021, 70(16): 166101.doi:10.7498/aps.70.20210515 |
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Dong Shi-Jian, Guo Hong-Xia, Ma Wu-Ying, Lv Ling, Pan Xiao-Yu, Lei Zhi-Feng, Yue Shao-Zhong, Hao Rui-Jing, Ju An-An, Zhong Xiang-Li, Ouyang Xiao-Ping.Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices. Acta Physica Sinica, 2020, 69(7): 078501.doi:10.7498/aps.69.20191557 |
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Zhou Yue, Hu Zhi-Yuan, Bi Da-Wei, Wu Ai-Min.Progress of radiation effects of silicon photonics devices. Acta Physica Sinica, 2019, 68(20): 204206.doi:10.7498/aps.68.20190543 |
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Zhao Jin-Yu, Yang Jian-Qun, Dong Lei, Li Xing-Ji.Hydrogen soaking irradiation acceleration method: application to and damage mechanism analysis on 3DG111 transistors. Acta Physica Sinica, 2019, 68(6): 068501.doi:10.7498/aps.68.20181992 |
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Yang Jian-Qun, Dong Lei, Liu Chao-Ming, Li Xing-Ji, Xu Peng-Fei.Impact of nitride passivation layer on ionizing irradiation damage on LPNP bipolar transistors. Acta Physica Sinica, 2018, 67(16): 168501.doi:10.7498/aps.67.20172215 |
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Hao Min-Ru, Hu Hui-Yong, Liao Chen-Guang, Wang Bin, Zhao Xiao-Hong, Kang Hai-Yang, Su Han, Zhang He-Ming.Influence of -ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2017, 66(7): 076101.doi:10.7498/aps.66.076101 |
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Zhou Hang, Zheng Qi-Wen, Cui Jiang-Wei, Yu Xue-Feng, Guo Qi, Ren Di-Yuan, Yu De-Zhao, Su Dan-Dan.Enhanced channel hot carrier effect of 0.13 m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect. Acta Physica Sinica, 2016, 65(9): 096104.doi:10.7498/aps.65.096104 |
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Liu Yuan, Chen Hai-Bo, He Yu-Juan, Wang Xin, Yue Long, En Yun-Fei, Liu Mo-Han.Radiation effects on the low frequency noise in partially depleted silicon on insulator transistors. Acta Physica Sinica, 2015, 64(7): 078501.doi:10.7498/aps.64.078501 |
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Li Duo-Fang, Cao Tian-Guang, Geng Jin-Peng, Zhan Yong.Damage-repair model for mutagenic effects of plant induced by ionizing radiation. Acta Physica Sinica, 2015, 64(24): 248701.doi:10.7498/aps.64.248701 |
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Wu Chuan-Lu, Ma Ying, Jiang Li-Mei, Zhou Yi-Chun, Li Jian-Cheng.Computer simulation of electric properties of metal-ferroelectric-substrate structured ferroelectric field effect transistor under ionizing radiation. Acta Physica Sinica, 2014, 63(21): 216102.doi:10.7498/aps.63.216102 |
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Li Xing-Ji, Liu Chao-Ming, Sun Zhong-Liang, Lan Mu-Jie, Xiao Li-Yi, He Shi-Yu.Radiation damage induced by various particles on CC4013 devices. Acta Physica Sinica, 2013, 62(5): 058502.doi:10.7498/aps.62.058502 |
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Li Xing-Ji, Lan Mu-Jie, Liu Chao-Ming, Yang Jian-Qun, Sun Zhong-Liang, Xiao Li-Yi, He Shi-Yu.The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors. Acta Physica Sinica, 2013, 62(9): 098503.doi:10.7498/aps.62.098503 |
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Ma Jing, Che Chi, Yu Si-Yuan, Tan Li-Ying, Zhou Yan-Ping, Wang Jian.-radiation damage of fiber Bragg grating and its effects on reflected spectrum characteristics. Acta Physica Sinica, 2012, 61(6): 064201.doi:10.7498/aps.61.064201 |
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Fan Xue, Li Wei, Li Ping, Zhang Bin, Xie Xiao-Dong, Wang Gang, Hu Bin, Zhai Ya-Hong.Total ionizing dose effects on n-channel metal oxide semiconductor transistors with annular-gate and ring-gate layouts. Acta Physica Sinica, 2012, 61(1): 016106.doi:10.7498/aps.61.016106 |
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Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing.Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate. Acta Physica Sinica, 2012, 61(24): 246101.doi:10.7498/aps.61.246101 |
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Gao Bo, Liu Gang, Wang Li-Xin, Han Zheng-Sheng, Zhang Yan-Fei, Wang Chun-Ling, Wen Jing-Chao.Research on the total dose effects for domestic VDMOS devices used in satellite. Acta Physica Sinica, 2012, 61(17): 176107.doi:10.7498/aps.61.176107 |
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He Bao-Ping, Ding Li-Li, Yao Zhi-Bin, Xiao Zhi-Gang, Huang Shao-Yan, Wang Zu-Jun.Three-dimensional simulation of total dose effects on ultra-deep submicron devices. Acta Physica Sinica, 2011, 60(5): 056105.doi:10.7498/aps.60.056105 |
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He Bao-Ping, Guo Hong-Xia, Gong Jian-Cheng, Wang Gui-Zhen, Luo Yin-Hong, Li Yong-Hong.Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment. Acta Physica Sinica, 2004, 53(9): 3125-3129.doi:10.7498/aps.53.3125 |
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ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN.RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATURE. Acta Physica Sinica, 2001, 50(12): 2434-2438.doi:10.7498/aps.50.2434 |
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