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Li Ji-Fang, Guo Hong-Xia, Ma Wu-Ying, Song Hong-Jia, Zhong Xiang-Li, Li Yang-Fan, Bai Ru-Xue, Lu Xiao-Jie, Zhang Feng-Qi.Total X-ray dose effect on graphene field effect transistor. Acta Physica Sinica, 2024, 73(5): 058501.doi:10.7498/aps.73.20231829 |
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Zhang Jin-Xin, Wang Xin, Guo Hong-Xia, Feng Juan, Lü Ling, Li Pei, Yan Yun-Yi, Wu Xian-Xiang, Wang Hui.Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistor. Acta Physica Sinica, 2022, 71(5): 058502.doi:10.7498/aps.71.20211795 |
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.3D Simulation Study on the Mechanism of Influence Factor of Total Dose Ionizing Effect on SiGe HBT. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211795 |
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Chen Rui, Liang Ya-Nan, Han Jian-Wei, Wang Xuan, Yang Han, Chen Qian, Yuan Run-Jie, Ma Ying-Qi, Shangguan Shi-Peng.Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma rays. Acta Physica Sinica, 2021, 70(11): 116102.doi:10.7498/aps.70.20202028 |
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Li Shun, Song Yu, Zhou Hang, Dai Gang, Zhang Jian.Statistical characteristics of total ionizing dose effects of bipolar transistors. Acta Physica Sinica, 2021, 70(13): 136102.doi:10.7498/aps.70.20201835 |
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Qin Li, Guo Hong-Xia, Zhang Feng-Qi, Sheng Jiang-Kun, Ouyang Xiao-Ping, Zhong Xiang-Li, Ding Li-Li, Luo Yin-Hong, Zhang Yang, Ju An-An.Total ionizing dose effect of ferroelectric random access memory under Co-60 gamma rays and electrons. Acta Physica Sinica, 2018, 67(16): 166101.doi:10.7498/aps.67.20180829 |
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Bai Yu-Rong, Xu Jing-Ping, Liu Lu, Fan Min-Min, Huang Yong, Cheng Zhi-Xiang.Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2014, 63(23): 237304.doi:10.7498/aps.63.237304 |
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Wang Xin, Lu Wu, Wu Xue, Ma Wu-Ying, Cui Jiang-Wei, Liu Mo-Han, Jiang Ke.Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor. Acta Physica Sinica, 2014, 63(22): 226101.doi:10.7498/aps.63.226101 |
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Hu Hui-Yong, Liu Xiang-Yu, Lian Yong-Chang, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin.Study on the influence of γ -ray total dose radiation effect on the threshold voltage and transconductance of the strained Si p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2014, 63(23): 236102.doi:10.7498/aps.63.236102 |
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Zhuo Qing-Qing, Liu Hong-Xia, Wang Zhi.Single event effect of 3D H-gate SOI NMOS devices in total dose ionizing. Acta Physica Sinica, 2013, 62(17): 176106.doi:10.7498/aps.62.176106 |
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Zhuo Qing-Qing, Liu Hong-Xia, Peng Li, Yang Zhao-Nian, Cai Hui-Min.Mechanism of three kink effects in irradiated partially-depleted SOINMOSFET's. Acta Physica Sinica, 2013, 62(3): 036105.doi:10.7498/aps.62.036105 |
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Li Ming, Yu Xue-Feng, Xue Yao-Guo, Lu Jian, Cui Jiang-Wei, Gao Bo.Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory. Acta Physica Sinica, 2012, 61(10): 106103.doi:10.7498/aps.61.106103 |
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Hu Zhi-Yuan, Liu Zhang-Li, Shao Hua, Zhang Zheng-Xuan, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang.The influence of channel length on total ionizing dose effect in deep submicron technologies. Acta Physica Sinica, 2012, 61(5): 050702.doi:10.7498/aps.61.050702 |
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Wang Yi-Yuan, Lu Wu, Ren Di-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa, Gao Bo.Degradation and dose rate effects of bipolar linearregulator on ionizing radiation. Acta Physica Sinica, 2011, 60(9): 096104.doi:10.7498/aps.60.096104 |
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Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang.Total ionizing dose effect of 0.18 m nMOSFETs. Acta Physica Sinica, 2011, 60(11): 116103.doi:10.7498/aps.60.116103 |
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He Bao-Ping, Yao Zhi-Bin.Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment. Acta Physica Sinica, 2010, 59(3): 1985-1990.doi:10.7498/aps.59.1985 |
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He Bao-Ping, Guo Hong-Xia, Gong Jian-Cheng, Wang Gui-Zhen, Luo Yin-Hong, Li Yong-Hong.Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment. Acta Physica Sinica, 2004, 53(9): 3125-3129.doi:10.7498/aps.53.3125 |
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He Chao-Hui, Geng Bin, He Bao-Ping, Yao Yu-Juan, Li Yong-Hong, Peng Hong-Lun, Lin Dong-Sheng, Zhou Hui, Chen Yu-Sheng.Test methods of total dose effects in verylarge scale integrated circuits. Acta Physica Sinica, 2004, 53(1): 194-199.doi:10.7498/aps.53.194 |
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GUO HONG-XIA, CHEN YU-SHENG, ZHANG YI-MEN, ZHOU HUI, GONG JIAN-CHENG, HAN FU-BIN, GUAN YING, WU GUO-RONG.STUDY OF RELATIVE DOSE-ENHANCEMENT EFFECTS ON CMOS DEVICE IRRADIATED BY STEADY-STATE AND TRANSIENT PULSED X-RAYS. Acta Physica Sinica, 2001, 50(12): 2279-2283.doi:10.7498/aps.50.2279 |
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ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN.RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATURE. Acta Physica Sinica, 2001, 50(12): 2434-2438.doi:10.7498/aps.50.2434 |
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