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Li Ji-Fang, Guo Hong-Xia, Ma Wu-Ying, Song Hong-Jia, Zhong Xiang-Li, Li Yang-Fan, Bai Ru-Xue, Lu Xiao-Jie, Zhang Feng-Qi.Total X-ray dose effect on graphene field effect transistor. Acta Physica Sinica, 2024, 73(5): 058501.doi:10.7498/aps.73.20231829 |
[2] |
Zhang Jin-Xin, Wang Xin, Guo Hong-Xia, Feng Juan, Lü Ling, Li Pei, Yan Yun-Yi, Wu Xian-Xiang, Wang Hui.Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistor. Acta Physica Sinica, 2022, 71(5): 058502.doi:10.7498/aps.71.20211795 |
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Zhang Shu-Hao, Yuan Zhang-Yi-An, Qiao Ming, Zhang Bo.Simulation study on radiation hardness for total ionizing dose effect of ultra-thin shielding layer 300 V SOI LDMOS. Acta Physica Sinica, 2022, 71(10): 107301.doi:10.7498/aps.71.20220041 |
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.3D Simulation Study on the Mechanism of Influence Factor of Total Dose Ionizing Effect on SiGe HBT. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211795 |
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Chen Rui, Liang Ya-Nan, Han Jian-Wei, Wang Xuan, Yang Han, Chen Qian, Yuan Run-Jie, Ma Ying-Qi, Shangguan Shi-Peng.Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma rays. Acta Physica Sinica, 2021, 70(11): 116102.doi:10.7498/aps.70.20202028 |
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Li Shun, Song Yu, Zhou Hang, Dai Gang, Zhang Jian.Statistical characteristics of total ionizing dose effects of bipolar transistors. Acta Physica Sinica, 2021, 70(13): 136102.doi:10.7498/aps.70.20201835 |
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Peng Chao1\2, En Yun-Fei, Li Bin, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Huang Yun.Radiation induced parasitic effect in silicon-on-insulator metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2018, 67(21): 216102.doi:10.7498/aps.67.20181372 |
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Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Wang Zu-Jun, Liu Min-Bo, Liu Jing, Sheng Jiang-Kun, Dong Guan-Tao, Xue Yuan-Yuan.Radiation effect and degradation mechanism in 65 nm CMOS transistor. Acta Physica Sinica, 2018, 67(14): 146103.doi:10.7498/aps.67.20172542 |
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Qin Li, Guo Hong-Xia, Zhang Feng-Qi, Sheng Jiang-Kun, Ouyang Xiao-Ping, Zhong Xiang-Li, Ding Li-Li, Luo Yin-Hong, Zhang Yang, Ju An-An.Total ionizing dose effect of ferroelectric random access memory under Co-60 gamma rays and electrons. Acta Physica Sinica, 2018, 67(16): 166101.doi:10.7498/aps.67.20180829 |
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Zhou Hang, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Ren Di-Yuan, Yu Xue-Feng.Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment. Acta Physica Sinica, 2015, 64(8): 086101.doi:10.7498/aps.64.086101 |
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Liu Hai-Jun, Tian Xiao-Bo, Li Qing-Jiang, Sun Zhao-Lin, Diao Jie-Tao.Research on radiation damage in titanium oxide memristors by Monte Carlo method. Acta Physica Sinica, 2015, 64(7): 078401.doi:10.7498/aps.64.078401 |
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Wang Xin, Lu Wu, Wu Xue, Ma Wu-Ying, Cui Jiang-Wei, Liu Mo-Han, Jiang Ke.Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor. Acta Physica Sinica, 2014, 63(22): 226101.doi:10.7498/aps.63.226101 |
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Ma Wu-Ying, Lu Wu, Guo Qi, He Cheng-Fa, Wu Xue, Wang Xin, Cong Zhong-Chao, Wang Bo, Maria.Analyses of ionization radiation damage and dose rate effect of bipolar voltage comparator. Acta Physica Sinica, 2014, 63(2): 026101.doi:10.7498/aps.63.026101 |
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Li Ming, Yu Xue-Feng, Xue Yao-Guo, Lu Jian, Cui Jiang-Wei, Gao Bo.Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory. Acta Physica Sinica, 2012, 61(10): 106103.doi:10.7498/aps.61.106103 |
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Zheng Yu-Zhan, Lu Wu, Ren Di-Yuan, Wang Yi-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa.Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas. Acta Physica Sinica, 2009, 58(8): 5572-5577.doi:10.7498/aps.58.5572 |
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He Chao-Hui, Geng Bin, He Bao-Ping, Yao Yu-Juan, Li Yong-Hong, Peng Hong-Lun, Lin Dong-Sheng, Zhou Hui, Chen Yu-Sheng.Test methods of total dose effects in verylarge scale integrated circuits. Acta Physica Sinica, 2004, 53(1): 194-199.doi:10.7498/aps.53.194 |
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He Bao-Ping, Guo Hong-Xia, Gong Jian-Cheng, Wang Gui-Zhen, Luo Yin-Hong, Li Yong-Hong.Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment. Acta Physica Sinica, 2004, 53(9): 3125-3129.doi:10.7498/aps.53.3125 |
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He Chao-Hui, Geng Bin, Yang Hai-Liang, Chen Xiao-Hua, Li Guo-Zheng, Wang Yan-Ping.Mechanism of radiation effects in floating gate ROMs. Acta Physica Sinica, 2003, 52(9): 2235-2238.doi:10.7498/aps.52.2235 |
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He Chao-Hui, Geng Bin, Yang Hai-Liang, Chen Xiao-Hua, Wang Yan-Ping, Li Guo-Zheng.Experimental study on irradiation effects in floating gate ROMs. Acta Physica Sinica, 2003, 52(1): 180-187.doi:10.7498/aps.52.180 |
[20] |
GUO HONG-XIA, CHEN YU-SHENG, ZHANG YI-MEN, ZHOU HUI, GONG JIAN-CHENG, HAN FU-BIN, GUAN YING, WU GUO-RONG.STUDY OF RELATIVE DOSE-ENHANCEMENT EFFECTS ON CMOS DEVICE IRRADIATED BY STEADY-STATE AND TRANSIENT PULSED X-RAYS. Acta Physica Sinica, 2001, 50(12): 2279-2283.doi:10.7498/aps.50.2279 |