[1] |
Qin Li, Guo Hong-Xia, Zhang Feng-Qi, Sheng Jiang-Kun, Ouyang Xiao-Ping, Zhong Xiang-Li, Ding Li-Li, Luo Yin-Hong, Zhang Yang, Ju An-An.Total ionizing dose effect of ferroelectric random access memory under Co-60 gamma rays and electrons. Acta Physica Sinica, 2018, 67(16): 166101.doi:10.7498/aps.67.20180829 |
[2] |
Li Xiao-Long, Lu Wu, Wang Xin, Guo Qi, He Cheng-Fa, Sun Jing, Yu Xin, Liu Mo-Han, Jia Jin-Cheng, Yao Shuai, Wei Xin-Yu.Estimation of low-dose-rate degradation on bipolar linear circuits using different accelerated evaluation methods. Acta Physica Sinica, 2018, 67(9): 096101.doi:10.7498/aps.67.20180027 |
[3] |
Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Wang Zu-Jun, Liu Min-Bo, Liu Jing, Sheng Jiang-Kun, Dong Guan-Tao, Xue Yuan-Yuan.Radiation effect and degradation mechanism in 65 nm CMOS transistor. Acta Physica Sinica, 2018, 67(14): 146103.doi:10.7498/aps.67.20172542 |
[4] |
Liu Hai-Jun, Tian Xiao-Bo, Li Qing-Jiang, Sun Zhao-Lin, Diao Jie-Tao.Research on radiation damage in titanium oxide memristors by Monte Carlo method. Acta Physica Sinica, 2015, 64(7): 078401.doi:10.7498/aps.64.078401 |
[5] |
Cong Zhong-Chao, Yu Xue-Feng, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Sun Jing, Wang Bo, Ma Wu-Ying, Ma Li-Ya, Zhou Hang.Online and offline test method of total dose radiation damage on static random access memory. Acta Physica Sinica, 2014, 63(8): 086101.doi:10.7498/aps.63.086101 |
[6] |
Wang Yu-Zhen, Ma Ying, Zhou Yi-Chun.Molecular dynamics study of epitaxial compressive strain influence on the radiation resistance of BaTiO3 ferroelectrics. Acta Physica Sinica, 2014, 63(24): 246101.doi:10.7498/aps.63.246101 |
[7] |
Ma Wu-Ying, Wang Zhi-Kuan, Lu Wu, Xi Shan-Bin, Guo Qi, He Cheng-Fa, Wang Xin, Liu Mo-Han, Jiang Ke.The base current broadening effect and charge separation method of gate-controlled lateral PNP bipolar transistors. Acta Physica Sinica, 2014, 63(11): 116101.doi:10.7498/aps.63.116101 |
[8] |
Zhang Xing-Yao, Guo Qi, Lu Wu, Zhang Xiao-Fu, Zheng Qi-Wen, Cui Jiang-Wei, Li Yu-Dong, Zhou Dong.Serial ferroelectric memory ionizing radiation effects and annealing characteristics. Acta Physica Sinica, 2013, 62(15): 156107.doi:10.7498/aps.62.156107 |
[9] |
Ma Guo-Liang, Li Xing-Ji, Liu Hai, Liu Chao-Ming, Yang Jian-Qun, He Shi-Yu.Effect of grain size on energy deposition process in Ni metal during 1 MeV electron irradiation. Acta Physica Sinica, 2013, 62(9): 091401.doi:10.7498/aps.62.091401 |
[10] |
Li Xing-Ji, Liu Chao-Ming, Sun Zhong-Liang, Lan Mu-Jie, Xiao Li-Yi, He Shi-Yu.Radiation damage induced by various particles on CC4013 devices. Acta Physica Sinica, 2013, 62(5): 058502.doi:10.7498/aps.62.058502 |
[11] |
Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing.Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate. Acta Physica Sinica, 2012, 61(24): 246101.doi:10.7498/aps.61.246101 |
[12] |
Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan.Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2011, 60(6): 068702.doi:10.7498/aps.60.068702 |
[13] |
Wang Yi-Yuan, Lu Wu, Ren Di-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa, Gao Bo.Degradation and dose rate effects of bipolar linearregulator on ionizing radiation. Acta Physica Sinica, 2011, 60(9): 096104.doi:10.7498/aps.60.096104 |
[14] |
Zheng Yu-Zhan, Lu Wu, Ren Di-Yuan, Wang Yi-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa.Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas. Acta Physica Sinica, 2009, 58(8): 5572-5577.doi:10.7498/aps.58.5572 |
[15] |
Fan Long, Hao Yue.The effect of radiation induced strain relaxation on electric performance of AlmGa1-mN/GaN HEMT. Acta Physica Sinica, 2007, 56(6): 3393-3399.doi:10.7498/aps.56.3393 |
[16] |
Meng Kang, Jiang Sen-Lin, Hou Li-Na, Li Chan, Wang Kun, Ding Zhi-Bo, Yao Shu-De.Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica, 2006, 55(5): 2476-2481.doi:10.7498/aps.55.2476 |
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He Bao-Ping, Chen Wei, Wang Gui-Zhen.A comparison of ionizing radiation damage in CMOS devices from 60Co Gamma rays, electrons and protons. Acta Physica Sinica, 2006, 55(7): 3546-3551.doi:10.7498/aps.55.3546 |
[18] |
He Bao-Ping, Guo Hong-Xia, Gong Jian-Cheng, Wang Gui-Zhen, Luo Yin-Hong, Li Yong-Hong.Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment. Acta Physica Sinica, 2004, 53(9): 3125-3129.doi:10.7498/aps.53.3125 |
[19] |
MU WEI-BING, CHEN PAN-XUN.MONTE-CARLO CALCULATION OF X-RAY DOSE ENHANCEMENT FACTOR NEARBY HIGH Z METAL CONNECTED INTERFACE. Acta Physica Sinica, 2001, 50(2): 189-192.doi:10.7498/aps.50.189 |
[20] |
GUO HONG-XIA, CHEN YU-SHENG, ZHANG YI-MEN, ZHOU HUI, GONG JIAN-CHENG, HAN FU-BIN, GUAN YING, WU GUO-RONG.STUDY OF RELATIVE DOSE-ENHANCEMENT EFFECTS ON CMOS DEVICE IRRADIATED BY STEADY-STATE AND TRANSIENT PULSED X-RAYS. Acta Physica Sinica, 2001, 50(12): 2279-2283.doi:10.7498/aps.50.2279 |