[1] |
Zhang Shu-Hao, Yuan Zhang-Yi-An, Qiao Ming, Zhang Bo.Simulation study on radiation hardness for total ionizing dose effect of ultra-thin shielding layer 300 V SOI LDMOS. Acta Physica Sinica, 2022, 71(10): 107301.doi:10.7498/aps.71.20220041 |
[2] |
Zhi Chang-Hong, Xu Shuang-Dong, Han Pan-Pan, Chen Ke, You Yun-Xiang.Applicability of high-order unidirectional internal solitary wave theoretical model. Acta Physica Sinica, 2022, 71(17): 174701.doi:10.7498/aps.71.20220411 |
[3] |
Dong Lei, Yang Jian-Qun, Zhen Zhao-Feng, Li Xing-Ji.Effects of pre-irradiated thermal treatment on ideal factor of excess base current in bipolar transistors. Acta Physica Sinica, 2020, 69(1): 018502.doi:10.7498/aps.69.20191151 |
[4] |
Zhao Jin-Yu, Yang Jian-Qun, Dong Lei, Li Xing-Ji.Hydrogen soaking irradiation acceleration method: application to and damage mechanism analysis on 3DG111 transistors. Acta Physica Sinica, 2019, 68(6): 068501.doi:10.7498/aps.68.20181992 |
[5] |
Zhou Yue, Hu Zhi-Yuan, Bi Da-Wei, Wu Ai-Min.Progress of radiation effects of silicon photonics devices. Acta Physica Sinica, 2019, 68(20): 204206.doi:10.7498/aps.68.20190543 |
[6] |
Yang Jian-Qun, Dong Lei, Liu Chao-Ming, Li Xing-Ji, Xu Peng-Fei.Impact of nitride passivation layer on ionizing irradiation damage on LPNP bipolar transistors. Acta Physica Sinica, 2018, 67(16): 168501.doi:10.7498/aps.67.20172215 |
[7] |
Zhou Hang, Zheng Qi-Wen, Cui Jiang-Wei, Yu Xue-Feng, Guo Qi, Ren Di-Yuan, Yu De-Zhao, Su Dan-Dan.Enhanced channel hot carrier effect of 0.13 m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect. Acta Physica Sinica, 2016, 65(9): 096104.doi:10.7498/aps.65.096104 |
[8] |
Zhou Hang, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Ren Di-Yuan, Yu Xue-Feng.Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment. Acta Physica Sinica, 2015, 64(8): 086101.doi:10.7498/aps.64.086101 |
[9] |
Liu Yuan, Chen Hai-Bo, He Yu-Juan, Wang Xin, Yue Long, En Yun-Fei, Liu Mo-Han.Radiation effects on the low frequency noise in partially depleted silicon on insulator transistors. Acta Physica Sinica, 2015, 64(7): 078501.doi:10.7498/aps.64.078501 |
[10] |
Ma Wu-Ying, Lu Wu, Guo Qi, He Cheng-Fa, Wu Xue, Wang Xin, Cong Zhong-Chao, Wang Bo, Maria.Analyses of ionization radiation damage and dose rate effect of bipolar voltage comparator. Acta Physica Sinica, 2014, 63(2): 026101.doi:10.7498/aps.63.026101 |
[11] |
Li Xing-Ji, Liu Chao-Ming, Sun Zhong-Liang, Lan Mu-Jie, Xiao Li-Yi, He Shi-Yu.Radiation damage induced by various particles on CC4013 devices. Acta Physica Sinica, 2013, 62(5): 058502.doi:10.7498/aps.62.058502 |
[12] |
Li Xing-Ji, Lan Mu-Jie, Liu Chao-Ming, Yang Jian-Qun, Sun Zhong-Liang, Xiao Li-Yi, He Shi-Yu.The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors. Acta Physica Sinica, 2013, 62(9): 098503.doi:10.7498/aps.62.098503 |
[13] |
Gao Song, Li Wei, You Yun-Xiang, Hu Tian-Qun.Numerical investigation on the gas-liquid severe slugging in a pipeline-riser system. Acta Physica Sinica, 2012, 61(10): 104701.doi:10.7498/aps.61.104701 |
[14] |
Ma Jing, Che Chi, Yu Si-Yuan, Tan Li-Ying, Zhou Yan-Ping, Wang Jian.-radiation damage of fiber Bragg grating and its effects on reflected spectrum characteristics. Acta Physica Sinica, 2012, 61(6): 064201.doi:10.7498/aps.61.064201 |
[15] |
Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan.Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2011, 60(6): 068702.doi:10.7498/aps.60.068702 |
[16] |
Wang Yi-Yuan, Lu Wu, Ren Di-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa, Gao Bo.Degradation and dose rate effects of bipolar linearregulator on ionizing radiation. Acta Physica Sinica, 2011, 60(9): 096104.doi:10.7498/aps.60.096104 |
[17] |
He Bao-Ping, Yao Zhi-Bin.Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment. Acta Physica Sinica, 2010, 59(3): 1985-1990.doi:10.7498/aps.59.1985 |
[18] |
Chen Wei-Hua, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Zhang Tian-Fu, Zhang Xue.A model considering the ionizing radiation effects in MOS structure. Acta Physica Sinica, 2009, 58(6): 4090-4095.doi:10.7498/aps.58.4090 |
[19] |
Fang Zhen-Qian, Hu Ming, Zhang Wei, Zhang Xu-Rui.Micro-Raman spectroscopic investigation of the thermal conductivity of oxidized meso-porous silicon. Acta Physica Sinica, 2008, 57(1): 103-110.doi:10.7498/aps.57.103 |
[20] |
WANG DE-ZHEN, MA TENG-CAI.THEORETICAL MODEL FOR THE HEAVY PARTICLE TRANSPORT IN A CATHODE SHEATH. Acta Physica Sinica, 2000, 49(12): 2404-2407.doi:10.7498/aps.49.2404 |