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Li Yang-Fan, Guo Hong-Xia, Zhang Hong, Bai Ru-Xue, Zhang Feng-Qi, Ma Wu-Ying, Zhong Xiang-Li, Li Ji-Fang, Lu Xiao-Jie.Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2024, 73(2): 026103.doi:10.7498/aps.73.20231440 |
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Zhou Yue, Hu Zhi-Yuan, Bi Da-Wei, Wu Ai-Min.Progress of radiation effects of silicon photonics devices. Acta Physica Sinica, 2019, 68(20): 204206.doi:10.7498/aps.68.20190543 |
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Peng Chao1\2, En Yun-Fei, Li Bin, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Huang Yun.Radiation induced parasitic effect in silicon-on-insulator metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2018, 67(21): 216102.doi:10.7498/aps.67.20181372 |
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Jiang Ke, Lu Wu, Hu Tian-Le, Wang Xin, Guo Qi, He Cheng-Fa, Liu Mo-Han, Li Xiao-Long.Radiation damage effect and post-annealing treatments of NPN-input bipolar operational amplifier in electron radiation environment. Acta Physica Sinica, 2015, 64(13): 136103.doi:10.7498/aps.64.136103 |
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Yang Shuai, Tang Xiao-Yan, Zhang Yu-Ming, Song Qing-Wen, Zhang Yi-Men.Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET. Acta Physica Sinica, 2014, 63(20): 208501.doi:10.7498/aps.63.208501 |
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Fan Min-Min, Xu Jing-Ping, Liu Lu, Bai Yu-Rong, Huang Yong.Models on threshold voltage/subthreshold swing and structural design of high-k gate dielectric GeOI MOSFET. Acta Physica Sinica, 2014, 63(8): 087301.doi:10.7498/aps.63.087301 |
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Hu Hui-Yong, Liu Xiang-Yu, Lian Yong-Chang, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin.Study on the influence of γ -ray total dose radiation effect on the threshold voltage and transconductance of the strained Si p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2014, 63(23): 236102.doi:10.7498/aps.63.236102 |
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Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng.Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage. Acta Physica Sinica, 2014, 63(23): 237302.doi:10.7498/aps.63.237302 |
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Liu Hong-Xia, Wang Zhi, Zhuo Qing-Qing, Wang Qian-Qiong.Influence of channel length on PD SOI PMOS devices under total dose irradiation. Acta Physica Sinica, 2014, 63(1): 016102.doi:10.7498/aps.63.016102 |
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Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing.Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor. Acta Physica Sinica, 2013, 62(10): 108501.doi:10.7498/aps.62.108501 |
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Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang.A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica, 2012, 61(10): 107803.doi:10.7498/aps.61.107803 |
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Gao Bo, Liu Gang, Wang Li-Xin, Han Zheng-Sheng, Zhang Yan-Fei, Wang Chun-Ling, Wen Jing-Chao.Research on the total dose effects for domestic VDMOS devices used in satellite. Acta Physica Sinica, 2012, 61(17): 176107.doi:10.7498/aps.61.176107 |
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Fan Xue, Li Wei, Li Ping, Zhang Bin, Xie Xiao-Dong, Wang Gang, Hu Bin, Zhai Ya-Hong.Total ionizing dose effects on n-channel metal oxide semiconductor transistors with annular-gate and ring-gate layouts. Acta Physica Sinica, 2012, 61(1): 016106.doi:10.7498/aps.61.016106 |
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Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan.Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2011, 60(6): 068702.doi:10.7498/aps.60.068702 |
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Qu Jiang-Tao, Wang Xiao-Yan, Zhang He-Ming, Wang Guan-Yu, Song Jian-Jun, Qin Shan-Shan.Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistor. Acta Physica Sinica, 2011, 60(2): 027102.doi:10.7498/aps.60.027102 |
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Zhai Ya-Hong, Li Ping, Zhang Guo-Jun, Luo Yu-Xiang, Fan Xue, Hu Bin, Li Jun-Hong, Zhang Jian, Su Ping.Radiation-resistant bipolar n-p-n transistor. Acta Physica Sinica, 2011, 60(8): 088501.doi:10.7498/aps.60.088501 |
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He Bao-Ping, Ding Li-Li, Yao Zhi-Bin, Xiao Zhi-Gang, Huang Shao-Yan, Wang Zu-Jun.Three-dimensional simulation of total dose effects on ultra-deep submicron devices. Acta Physica Sinica, 2011, 60(5): 056105.doi:10.7498/aps.60.056105 |
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Liu Hong-Xia, Yin Xiang-Kun, Liu Bing-Jie, Hao Yue.Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor. Acta Physica Sinica, 2010, 59(12): 8877-8882.doi:10.7498/aps.59.8877 |
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Quan Rong-Hui, Han Jian-Wei, Huang Jian-Guo, Zhang Zhen-Long.Modeling analysis of radiation induced conductivity in electrical insulator. Acta Physica Sinica, 2007, 56(11): 6642-6647.doi:10.7498/aps.56.6642 |
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ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN.RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATURE. Acta Physica Sinica, 2001, 50(12): 2434-2438.doi:10.7498/aps.50.2434 |
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