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Abstract

In this work, the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) with poly-Si1-xGex gate has been studied. Based on the analysis of vertical electric field and potential distribution, the equipment oxide thickness of strained SiGe PMOSFET with poly Si1-xGex gate is established. The mechanism and the influence of hot carriers induced are studied. A model of the drift of threshold voltage is established; its relationships with the duration of the applied electrical stress, the voltage of gate, the Ge content of the poly Si1-xGex gate and the strained SiGe are also obtained. Based on the above results, the simulation results have been compared with the experimental data. The drift of threshold voltage is 0.032 V under 10000 s electrical stress. A good agreement is observed, which indicates the validation of our proposed model.

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1.
Funds:Project supported by the Doctoral Foundation of Ministry of Education, China (Grant No. JY0300122503) and Fundamental Research Funds for the Central Universities of China (Grant Nos. K5051225014, K5051225004).

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Cited By

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Vol. 63, Issue 23 - 2014-12-05

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