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Abstract

The development of strained-Si physical compact threshold voltage model is based on Poisson's equation, using the gradual channel approximation (GCA) and coherent quasi-two-dimensional (2D) analysis, as well as taking into account the effects of short channel effect (SCE), narrow channel effect (NCE), non-uniform doping effect, and drain-induced barrier lowering (DIBL) effect. Moreover, the threshold voltage parameters are extracted from the experimental results by software. Finally, the validity of our model is derived from the comparison of our simulation results. The proposed model may be useful for the design and simulation of very large scale integrated circuits (VLSI) made of strained-Si.

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Funds:Project supported by the Research Fund for the Doctoral Program of Higher Education of China (Grant No. JY0300122503), the Fundamental Research Funds for the Central Universities (Grant Nos. K5051225014, K5051225004), and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008).

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Cited By

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[1]	Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu.A Model of channel current for uniaxially strained Si NMOSFET. Acta Physica Sinica, 2015, 64(19): 197301.doi:10.7498/aps.64.197301
[2]	Xin Yan-Hui, Liu Hong-Xia, Wang Shu-Long, Fan Xiao-Jiao.Two-dimensional analytical models for the symmetrical triple-material double-gate strained Si MOSFETs. Acta Physica Sinica, 2014, 63(14): 148502.doi:10.7498/aps.63.148502
[3]	Fan Min-Min, Xu Jing-Ping, Liu Lu, Bai Yu-Rong, Huang Yong.Models on threshold voltage/subthreshold swing and structural design of high-k gate dielectric GeOI MOSFET. Acta Physica Sinica, 2014, 63(8): 087301.doi:10.7498/aps.63.087301
[4]	Hu Hui-Yong, Liu Xiang-Yu, Lian Yong-Chang, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin.Study on the influence of γ -ray total dose radiation effect on the threshold voltage and transconductance of the strained Si p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2014, 63(23): 236102.doi:10.7498/aps.63.236102
[5]	Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng.Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage. Acta Physica Sinica, 2014, 63(23): 237302.doi:10.7498/aps.63.237302
[6]	Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Li Yu-Chen.Analytical modeling for drain current of strained Si NMOSFET. Acta Physica Sinica, 2013, 62(23): 237103.doi:10.7498/aps.62.237103
[7]	Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing.Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor. Acta Physica Sinica, 2013, 62(10): 108501.doi:10.7498/aps.62.108501
[8]	Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Song Jian-Jun, Zhou Chun-Yu, Li Yu-Chen.Study on physical model for strained Si MOSFET with hetero-polycrystalline SiGe gate. Acta Physica Sinica, 2013, 62(21): 218502.doi:10.7498/aps.62.218502
[9]	Cao Lei, Liu Hong-Xia, Wang Guan-Yu.Study of modeling for hetero-materiel gate fully depleted SSDOI MOSFET. Acta Physica Sinica, 2012, 61(1): 017105.doi:10.7498/aps.61.017105
[10]	Hu Hui-Yong, Lei Shuai, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin, Wang Bin.Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate. Acta Physica Sinica, 2012, 61(10): 107301.doi:10.7498/aps.61.107301
[11]	Li Yu-Chen, Zhang He-Ming, Zhang Yu-Ming, Hu Hui-Yong, Xu Xiao-Bo, Qin Shan-Shan, Wang Guan-Yu.A analytic model for the threshold-voltage of novel high-speed semiconductor device IMOS. Acta Physica Sinica, 2012, 61(4): 047303.doi:10.7498/aps.61.047303
[12]	Li Li, Liu Hong-Xia, Yang Zhao-Nian.Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistor. Acta Physica Sinica, 2012, 61(16): 166101.doi:10.7498/aps.61.166101
[13]	Qu Jiang-Tao, Zhang He-Ming, Qin Shan-Shan, Xu Xiao-Bo, Wang Xiao-Yan, Hu Hui-Yong.Study of physically modeling for small-scaled strained Si nMOSFET. Acta Physica Sinica, 2011, 60(9): 098501.doi:10.7498/aps.60.098501
[14]	Qu Jiang-Tao, Zhang He-Ming, Wang Guan-Yu, Wang Xiao-Yan, Hu Hui-Yong.Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gate. Acta Physica Sinica, 2011, 60(5): 058502.doi:10.7498/aps.60.058502
[15]	Wang Guan-Yu, Zhang He-Ming, Wang Xiao-Yan, Wu Tie-Feng, Wang Bin.Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET. Acta Physica Sinica, 2011, 60(7): 077106.doi:10.7498/aps.60.077106
[16]	Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming.The threshold voltage of SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica, 2009, 58(1): 494-497.doi:10.7498/aps.58.494
[17]	Zhang Zhi-Feng, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Song Jian-Jun.Threshold voltage model of strained Si channel nMOSFET. Acta Physica Sinica, 2009, 58(7): 4948-4952.doi:10.7498/aps.58.4948
[18]	Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi.Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica, 2007, 56(6): 3504-3508.doi:10.7498/aps.56.3504
[19]	Li Yan-Ping, Xu Jing-Ping, Chen Wei-Bing, Xu Sheng-Guo, Ji Feng.2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects. Acta Physica Sinica, 2006, 55(7): 3670-3676.doi:10.7498/aps.55.3670
[20]	Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E.An analytical model of MOSFET threshold voltage with considiring the quantum effects. Acta Physica Sinica, 2005, 54(2): 897-901.doi:10.7498/aps.54.897

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Vol. 62, Issue 7 - 2013-04-05

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