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Peng Chao1\2, En Yun-Fei, Li Bin, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Huang Yun.Radiation induced parasitic effect in silicon-on-insulator metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2018, 67(21): 216102.doi:10.7498/aps.67.20181372 |
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Zhou Hang, Zheng Qi-Wen, Cui Jiang-Wei, Yu Xue-Feng, Guo Qi, Ren Di-Yuan, Yu De-Zhao, Su Dan-Dan.Enhanced channel hot carrier effect of 0.13 m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect. Acta Physica Sinica, 2016, 65(9): 096104.doi:10.7498/aps.65.096104 |
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Liu Chang, Lu Ji-Wu, Wu Wang-Ran, Tang Xiao-Yu, Zhang Rui, Yu Wen-Jie, Wang Xi, Zhao Yi.Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFET. Acta Physica Sinica, 2015, 64(16): 167305.doi:10.7498/aps.64.167305 |
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Zhou Hang, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Ren Di-Yuan, Yu Xue-Feng.Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment. Acta Physica Sinica, 2015, 64(8): 086101.doi:10.7498/aps.64.086101 |
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Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu.A model of capacitance characteristic for uniaxially strained Si N-metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2015, 64(6): 067305.doi:10.7498/aps.64.067305 |
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Liu Hong-Xia, Wang Zhi, Zhuo Qing-Qing, Wang Qian-Qiong.Influence of channel length on PD SOI PMOS devices under total dose irradiation. Acta Physica Sinica, 2014, 63(1): 016102.doi:10.7498/aps.63.016102 |
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Bai Yu-Rong, Xu Jing-Ping, Liu Lu, Fan Min-Min, Huang Yong, Cheng Zhi-Xiang.Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2014, 63(23): 237304.doi:10.7498/aps.63.237304 |
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Hu Hui-Yong, Liu Xiang-Yu, Lian Yong-Chang, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin.Study on the influence of γ -ray total dose radiation effect on the threshold voltage and transconductance of the strained Si p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2014, 63(23): 236102.doi:10.7498/aps.63.236102 |
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Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng.Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage. Acta Physica Sinica, 2014, 63(23): 237302.doi:10.7498/aps.63.237302 |
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Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Wang Guan-Yu.Charge model of strained Si NMOSFET. Acta Physica Sinica, 2014, 63(1): 017101.doi:10.7498/aps.63.017101 |
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Xin Yan-Hui, Liu Hong-Xia, Wang Shu-Long, Fan Xiao-Jiao.Two-dimensional analytical models for the symmetrical triple-material double-gate strained Si MOSFETs. Acta Physica Sinica, 2014, 63(14): 148502.doi:10.7498/aps.63.148502 |
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Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing.Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor. Acta Physica Sinica, 2013, 62(10): 108501.doi:10.7498/aps.62.108501 |
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Cao Lei, Liu Hong-Xia, Wang Guan-Yu.Study of modeling for hetero-materiel gate fully depleted SSDOI MOSFET. Acta Physica Sinica, 2012, 61(1): 017105.doi:10.7498/aps.61.017105 |
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Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan.Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2011, 60(6): 068702.doi:10.7498/aps.60.068702 |
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Qu Jiang-Tao, Wang Xiao-Yan, Zhang He-Ming, Wang Guan-Yu, Song Jian-Jun, Qin Shan-Shan.Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistor. Acta Physica Sinica, 2011, 60(2): 027102.doi:10.7498/aps.60.027102 |
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Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming.Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2011, 60(1): 017202.doi:10.7498/aps.60.017202 |
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Qin Shan-Shan, Zhang He-Ming, Hu Hui-Yong, Qu Jiang-Tao, Wang Guan-Yu, Xiao Qing, Shu Yu.A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET. Acta Physica Sinica, 2011, 60(5): 058501.doi:10.7498/aps.60.058501 |
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Wu Tie-Feng, Zhang He-Ming, Wang Guan-Yu, Hu Hui-Yong.Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor. Acta Physica Sinica, 2011, 60(2): 027305.doi:10.7498/aps.60.027305 |
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Zhang Zhi-Feng, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Song Jian-Jun.Threshold voltage model of strained Si channel nMOSFET. Acta Physica Sinica, 2009, 58(7): 4948-4952.doi:10.7498/aps.58.4948 |
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Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Xuan Rong-Xi.Band structure of strained Si/(111)Si1-xGex: a first principles investigation. Acta Physica Sinica, 2008, 57(9): 5918-5922.doi:10.7498/aps.57.5918 |
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