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Zhao Shu-Yu, Xu Bin-Bin, Zhao Zhen-Yu, Lü Xue-Qin.Influence of top mirror on performance of GaN-based resonant cavity light-emitting diode. Acta Physica Sinica, 2022, 71(4): 047801.doi:10.7498/aps.71.20211720 |
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi.Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica, 2015, 64(10): 107801.doi:10.7498/aps.64.107801 |
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Zhai Dong-Yuan, Zhao Yi, Cai Yin-Fei, Shi Yi, Zheng You-Dou.Effect of the trench shape on the electrical properties of silicon based trench barrier schottky diode. Acta Physica Sinica, 2014, 63(12): 127201.doi:10.7498/aps.63.127201 |
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Zuo Ying-Hong, Wang Jian-Guo, Fan Ru-Yu.Influence of diode gap distance on space charge effects in field emission. Acta Physica Sinica, 2012, 61(21): 215202.doi:10.7498/aps.61.215202 |
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Tang Xiao-Yan, Dai Xiao-Wei, Zhang Yu-Ming, Zhang Yi-Men.Study of the effect of lithography deviation on 4H-SiC floating junction junction barrier Schottky diode. Acta Physica Sinica, 2012, 61(8): 088501.doi:10.7498/aps.61.088501 |
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Liu Yu-Dong, Du Lei, Sun Peng, Chen Wen-Hao.The effect of electrostatic discharge on the I-V and low frequency noise characterization of Schottky barrier diodes. Acta Physica Sinica, 2012, 61(13): 137203.doi:10.7498/aps.61.137203 |
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Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi.Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates. Acta Physica Sinica, 2011, 60(7): 078503.doi:10.7498/aps.60.078503 |
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Ma Li, Wang Dong-Fang, Gao Yong, Zhang Ru-Liang.Effects of p and n pillar widths on electrical characteristicsof super junction SiGe power diodes. Acta Physica Sinica, 2011, 60(4): 047303.doi:10.7498/aps.60.047303 |
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Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang.The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica, 2008, 57(9): 5869-5874.doi:10.7498/aps.57.5869 |
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Gu Xiao-Ling, Guo Xia, Wu Di, Li Yi-Bo, Shen Guang-Di.Dependence of properties of GaN-based light emitting diodes on the surface InGaN thickness. Acta Physica Sinica, 2008, 57(2): 1220-1223.doi:10.7498/aps.57.1220 |
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Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di.Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2007, 56(10): 6003-6007.doi:10.7498/aps.56.6003 |
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