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Ji Zeng-Chao, Chen Shi-Xiu, Gao Shen, Chen Jun, Tian Wei.Analysis on mechanism of radiating microwave from vacuum diode. Acta Physica Sinica, 2016, 65(14): 145202.doi:10.7498/aps.65.145202 |
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Chen Hao-Ran, Yang Lin-An, Zhu Zhang-Ming, Lin Zhi-Yu, Zhang Jin-Cheng.Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode. Acta Physica Sinica, 2013, 62(21): 217301.doi:10.7498/aps.62.217301 |
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Xiong Ling-Ling, Li Jian-Long, Lü Bai-Da.A novel method for simulating source-field distribution of diode laser. Acta Physica Sinica, 2009, 58(2): 975-979.doi:10.7498/aps.58.975 |
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Zou Jian-Hua, Tao Hong, Wu Hong-Bin, Peng Jun-Biao.Improved performance of white polymer light emitting diodes. Acta Physica Sinica, 2009, 58(2): 1224-1228.doi:10.7498/aps.58.1224 |
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Chen Huan-Ting, Lü Yi-Jun, Chen Zhong, Zhang Hai-Bing, Gao Yu-Lin, Chen Guo-Long.Analysis of degradation mechanism of GaN blue light emitting diode by the characteristics of capacitance and conductance. Acta Physica Sinica, 2009, 58(8): 5700-5704.doi:10.7498/aps.58.5700 |
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Gu Xiao-Ling, Guo Xia, Wu Di, Li Yi-Bo, Shen Guang-Di.Dependence of properties of GaN-based light emitting diodes on the surface InGaN thickness. Acta Physica Sinica, 2008, 57(2): 1220-1223.doi:10.7498/aps.57.1220 |
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Wang Yan-Xin, Zhang Qi-Feng, Sun Hui, Chang Yan-Ling, Wu Jin-Lei.Fabrication of ZnO nanowire-based diodes and their light-emitting properties. Acta Physica Sinica, 2008, 57(2): 1141-1144.doi:10.7498/aps.57.1141 |
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Xiong Chuan-Bing, Jiang Feng-Yi, Wang Li, Fang Wen-Qing, Mo Chun-Lan.The investigation on the interference phenomenon in electroluminescence spectrum of vertical structured InGaAlN multiple quantum well light-emitting diodes. Acta Physica Sinica, 2008, 57(12): 7860-7864.doi:10.7498/aps.57.7860 |
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Huang Wen-Bo, Peng Jun-Biao.Carrier injection process of polymer light-emitting diodes. Acta Physica Sinica, 2007, 56(5): 2974-2978.doi:10.7498/aps.56.2974 |
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Sun Hui, Zhang Qi-Feng, Wu Jin-Lei.Ultraviolet light emitting diode based on ZnO nanowires. Acta Physica Sinica, 2007, 56(6): 3479-3482.doi:10.7498/aps.56.3479 |
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Zhang Jian-Ming, Zou De-Shu, Liu Si-Nan, Xu Chen, Shen Guang-Di.A novel AlGaInP thin-film light emitting diode with omni directional reflector. Acta Physica Sinica, 2007, 56(5): 2905-2909.doi:10.7498/aps.56.2905 |
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
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Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang.Noise as a representation for reliability of light emitting diode. Acta Physica Sinica, 2006, 55(3): 1384-1389.doi:10.7498/aps.55.1384 |
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Sun Ke-Xu, Jiang Shao-En, Yi Rong-Qing, Cui Yan-Li, Ding Yong-Kun, Liu Shen-Ye.Research on time characteristics of soft X-ray diode. Acta Physica Sinica, 2006, 55(1): 68-75.doi:10.7498/aps.55.68 |
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YI MING-GUANG.TRIGGERED OSCILLATION IN TUNNEL DIODE CIRCUITS WITH NON-LINEAR BIAS. Acta Physica Sinica, 1974, 23(5): 23-42.doi:10.7498/aps.23.23 |
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CHUO CHI-TSANG, SHIUH GEN-TWEN.THE FIGURE OF MERIT FOR THE ALLOY-DIFFUSED PARAMETRIC DIODE. Acta Physica Sinica, 1964, 20(4): 311-326.doi:10.7498/aps.20.311 |
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WU SHIH-CHIU.A GRAPHICAL ANALYSIS FOR NONLINEAR SYSTEMS WITH APPLICATIONS IN TUNNEL-DIODE CIRCUITS. Acta Physica Sinica, 1964, 20(8): 731-752.doi:10.7498/aps.20.731 |
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HSU YUAN-HUA.HARMONIC ANALYSER FOR MEASURING THE FIRST AND SECOND DERIVATIVES OF I-V CHARACTERISTICS OF TUNNEL DIODES AND POINT CONTACT DIODES. Acta Physica Sinica, 1964, 20(9): 919-927.doi:10.7498/aps.20.919 |
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SEN HSUEH-CHU, CHEN NING-CHIANG.PRESSURE DEPENDENCE OF THE CURRENT-VOLTAGE CHARACTERISTICS OF GERMANIUM ESAKI DIODES. Acta Physica Sinica, 1964, 20(10): 1019-1026.doi:10.7498/aps.20.1019 |
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HSIEH HSI-TEH, SHIH CHIN-HSING, HSIEH HSING-PIN.A STUDY OF THE TEMPERATURE DEPENDENCE OF THE VOLTAGE CURRENT CHARACTERISTIC OF TUNNEL DIODES. Acta Physica Sinica, 1963, 19(2): 124-133.doi:10.7498/aps.19.124 |