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Zhang Lin, Ma Lin-Dong, Du Lin, Li Yan-Bo, Xu Xian-Feng, Huang Xin-Rong.Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltage. Acta Physica Sinica, 2023, 72(13): 138501.doi:10.7498/aps.72.20230207 |
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Fan Ji-Yu, Feng Yu, Lu Di, Zhang Wei-Chun, Hu Da-Zhi, Yang Yu-E, Tang Ru-Jun, Hong Bo, Ling Lang-Sheng, Wang Cai-Xia, Ma Chun-Lan, Zhu Yan.Magnetic and eletronic transport properties in n-type diluted magnetic semiconductor Ge0.96–xBixFe0.04Te film. Acta Physica Sinica, 2019, 68(10): 107501.doi:10.7498/aps.68.20190019 |
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Wang Zao, Zhang Guo-Feng, Li Bin, Chen Rui-Yun, Qin Cheng-Bing, Xiao Lian-Tuan, Jia Suo-Tang.Suppression of the blinking of single QDs by using an N-type semiconductor nanomaterial. Acta Physica Sinica, 2015, 64(24): 247803.doi:10.7498/aps.64.247803 |
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Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Wang Guan-Yu.Charge model of strained Si NMOSFET. Acta Physica Sinica, 2014, 63(1): 017101.doi:10.7498/aps.63.017101 |
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Nie Meng, Zhao Yan, Zeng Yong, Jiang Yi-Jian.Investigation on visible emission and n-type conductivity of ZnO thin films annealed at different temperatures. Acta Physica Sinica, 2013, 62(17): 176801.doi:10.7498/aps.62.176801 |
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Yang Tian-Yong, Kong Chun-Yang, Ruan Hai-Bo, Qin Guo-Ping, Li Wan-Jun, Liang Wei-Wei, Meng Xiang-Dan, Zhao Yong-Hong, Fang Liang, Cui Yu-Ting.Study on the p-type conductivities and Raman scattering properties of N+ ion-implanted O-rich ZnO thin films. Acta Physica Sinica, 2013, 62(3): 037703.doi:10.7498/aps.62.037703 |
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You Hai-Long, Lan Jian-Chun, Fan Ju-Ping, Jia Xin-Zhang, Zha Wei.Research on characteristics degradation of n-metal-oxide-semiconductor field-effect transistor induced by hot carrier effect due to high power microwave. Acta Physica Sinica, 2012, 61(10): 108501.doi:10.7498/aps.61.108501 |
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Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming.Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2011, 60(1): 017202.doi:10.7498/aps.60.017202 |
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Hou Qing-Yu, Zhao Chun-Wang, Jin Yong-Jun.First-principles study on the effects of the concentration of Al-2N high codoping on the electric conducting performance of ZnO. Acta Physica Sinica, 2009, 58(10): 7136-7140.doi:10.7498/aps.58.7136 |
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Li Wei-Hua, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin.Non-Gaussianity of noise in n-type metal oxide semiconductor field effect transistor. Acta Physica Sinica, 2009, 58(10): 7183-7188.doi:10.7498/aps.58.7183 |
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Zhu Bo, Gui Yong-Sheng, Zhou Wen-Zheng, Shang Li-Yan, Qiu Zhi-Jun, Guo Shao-Ling, Zhang Fu-Jia, Chu Jun-Hao.Magnetoresistance oscillation of two-dimensional electrons gas in narrow gap dilute magnetic semiconductor. Acta Physica Sinica, 2006, 55(6): 2955-2960.doi:10.7498/aps.55.2955 |
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Xu Hui, Song Wei-Pu, Li Xin-Mei.. Acta Physica Sinica, 2002, 51(1): 143-147.doi:10.7498/aps.51.143 |
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Xu Hui, Song Wei-Fu.. Acta Physica Sinica, 2002, 51(8): 1798-1803.doi:10.7498/aps.51.1798 |
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KONG GHUN-YANG, WANG WAN-LU, LIAO KE-JUN, MA YONG, WANG SHU-XIA, FANG LIANG.THE MAGNETORESISTIVE EFFECT OF p-TYPE SEMICONDUCTING DIAMOND FILMS. Acta Physica Sinica, 2001, 50(8): 1616-1622.doi:10.7498/aps.50.1616 |
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REN HONG-XIA, HAO YUE, XU DONG-GANG.STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR. Acta Physica Sinica, 2000, 49(7): 1241-1248.doi:10.7498/aps.49.1241 |
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LAN SIN-FU.THE TRANSVERSE MAGNETORESISTANCE FOR n-TYPE GERMANIUM IN A STRONG MAGNETIC FIELD. Acta Physica Sinica, 1965, 21(5): 1015-1037.doi:10.7498/aps.21.1015 |
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HO YU-PING.HOPPING PROCESS AND IMPURITY CONDUCTION IN VALENCE SEMICONDUCTORS. Acta Physica Sinica, 1963, 19(12): 791-806.doi:10.7498/aps.19.791 |
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