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Hu Chen-Yang, Liang Jia-Luo, Zheng Ri-Yi, Lu Jiu-Yang, Deng Wei-Yin, Huang Xue-Qin, Liu Zheng-You.One-dimensional synthetic waterborne phononic crystals. Acta Physica Sinica, 2024, 73(10): 104301.doi:10.7498/aps.73.20240298 |
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Gao Hui-Fen, Zhou Xiao-Fang, Huang Xue-Qin.Zak phase induced interface states in two-dimensional phononic crystals. Acta Physica Sinica, 2022, 71(4): 044301.doi:10.7498/aps.71.20211642 |
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Dai Mei-Qin, Zhang Qing-Yue, Zhao Qiu-Ling, Wang Mao-Rong, Wang Xia.Controllable characteristics of interface states in one-dimensional inverted symmetric photonic structures. Acta Physica Sinica, 2022, 71(20): 204205.doi:10.7498/aps.71.20220383 |
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.Zak phase induces interface states in two-dimensional phononic crystals. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211642 |
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Dong Lei, Yang Jian-Qun, Zhen Zhao-Feng, Li Xing-Ji.Effects of pre-irradiated thermal treatment on ideal factor of excess base current in bipolar transistors. Acta Physica Sinica, 2020, 69(1): 018502.doi:10.7498/aps.69.20191151 |
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Zhang Meng, Yao Ruo-He, Liu Yu-Rong.A channel thermal noise model of nanoscaled metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2020, 69(5): 057101.doi:10.7498/aps.69.20191512 |
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Jia Zi-Yuan, Yang Yu-Ting, Ji Li-Yu, Hang Zhi-Hong.Deterministic interface states in photonic crystal with graphene-allotrope-like complex unit cells. Acta Physica Sinica, 2017, 66(22): 227802.doi:10.7498/aps.66.227802 |
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Wang Qing-Hai, Li Feng, Huang Xue-Qin, Lu Jiu-Yang, Liu Zheng-You.The topological phase transition and the tunable interface states in granular crystal. Acta Physica Sinica, 2017, 66(22): 224502.doi:10.7498/aps.66.224502 |
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He Yu-Juan, Zhang Xiao-Wen, Liu Yuan.Total dose dependence of hot carrier injection effect in the n-channel metal oxide semiconductor devices. Acta Physica Sinica, 2016, 65(24): 246101.doi:10.7498/aps.65.246101 |
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Huang Xue-Qin, Chan Che-Ting.Dirac-like cones at k=0. Acta Physica Sinica, 2015, 64(18): 184208.doi:10.7498/aps.64.184208 |
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Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei.Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model. Acta Physica Sinica, 2015, 64(13): 136104.doi:10.7498/aps.64.136104 |
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Cui Jiang-Wei, Yu Xue-Feng, Ren Di-Yuan, Lu Jian.The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET. Acta Physica Sinica, 2012, 61(2): 026102.doi:10.7498/aps.61.026102 |
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You Hai-Long, Lan Jian-Chun, Fan Ju-Ping, Jia Xin-Zhang, Zha Wei.Research on characteristics degradation of n-metal-oxide-semiconductor field-effect transistor induced by hot carrier effect due to high power microwave. Acta Physica Sinica, 2012, 61(10): 108501.doi:10.7498/aps.61.108501 |
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Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang.The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica, 2008, 57(9): 5869-5874.doi:10.7498/aps.57.5869 |
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Liu Hong Xia, Zheng Xue Feng, Hao Yue.Degradation and physical mechanism of NBT in deep submicron PMOSFET's. Acta Physica Sinica, 2005, 54(3): 1373-1377.doi:10.7498/aps.54.1373 |
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Tong Jian-Nong, Zou Xue-Cheng, Shen Xu-Bang.Study on the corner effect in new grooved-gate nMOSFET. Acta Physica Sinica, 2004, 53(9): 2905-2909.doi:10.7498/aps.53.2905 |
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Yang Lin-An, Zhang Yi-Men, Yu Chun-Li, Zhang Yu-Ming.Trapping effect modeling for SiC power MESFETs. Acta Physica Sinica, 2003, 52(2): 302-306.doi:10.7498/aps.52.302 |
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Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia.Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET. Acta Physica Sinica, 2003, 52(4): 830-833.doi:10.7498/aps.52.830 |
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ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN.RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATURE. Acta Physica Sinica, 2001, 50(12): 2434-2438.doi:10.7498/aps.50.2434 |
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REN HONG-XIA, HAO YUE.STUDY ON THE HOT-CARRIER-DEGRADATION MECHANISM AND HOT-CARRIER-EFFECT IMMUNITY I N ADVANCED GROOVED-GATE PMOSFET. Acta Physica Sinica, 2000, 49(9): 1683-1688.doi:10.7498/aps.49.1683 |
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