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Gao Hui-Fen, Zhou Xiao-Fang, Huang Xue-Qin.Zak phase induced interface states in two-dimensional phononic crystals. Acta Physica Sinica, 2022, 71(4): 044301.doi:10.7498/aps.71.20211642 |
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Zhang Hong, Guo Hong-Xia, Pan Xiao-Yu, Lei Zhi-Feng, Zhang Feng-Qi, Gu Zhao-Qiao, Liu Yi-Tian, Ju An-An, Ouyang Xiao-Ping.Transport process and energy loss of heavy ions in silicon carbide. Acta Physica Sinica, 2021, 70(16): 162401.doi:10.7498/aps.70.20210503 |
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.Zak phase induces interface states in two-dimensional phononic crystals. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211642 |
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Shen Shuai-Shuai, He Chao-Hui, Li Yong-Hong.Non-ionization energy loss of proton in different regions in SiC. Acta Physica Sinica, 2018, 67(18): 182401.doi:10.7498/aps.67.20181095 |
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Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong.Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement. Acta Physica Sinica, 2018, 67(17): 178501.doi:10.7498/aps.67.20180474 |
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Jia Zi-Yuan, Yang Yu-Ting, Ji Li-Yu, Hang Zhi-Hong.Deterministic interface states in photonic crystal with graphene-allotrope-like complex unit cells. Acta Physica Sinica, 2017, 66(22): 227802.doi:10.7498/aps.66.227802 |
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Wang Qing-Hai, Li Feng, Huang Xue-Qin, Lu Jiu-Yang, Liu Zheng-You.The topological phase transition and the tunable interface states in granular crystal. Acta Physica Sinica, 2017, 66(22): 224502.doi:10.7498/aps.66.224502 |
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Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei.Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model. Acta Physica Sinica, 2015, 64(13): 136104.doi:10.7498/aps.64.136104 |
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Fang Chao, Liu Ma-Lin.The study of the Raman spectra of SiC layers in TRISO particles. Acta Physica Sinica, 2012, 61(9): 097802.doi:10.7498/aps.61.097802 |
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Zhou Nai-Gen, Hong Tao, Zhou Lang.A comparative study between MEAM and Tersoff potentials on the characteristics of melting and solidification of carborundum. Acta Physica Sinica, 2012, 61(2): 028101.doi:10.7498/aps.61.028101 |
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Song Kun, Chai Chang-Chun, Yang Yin-Tang, Jia Hu-Jun, Chen Bin, Ma Zhen-Yang.Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistor. Acta Physica Sinica, 2012, 61(17): 177201.doi:10.7498/aps.61.177201 |
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Chen Shun-Sheng, Yang Chang-Ping, Xiao Hai-Bo, Xu Ling-Fang, Ma Chang.Effect of doping concentration on electric-pulse- induced resistance in Nd1-xSrxMnO3 ceramics. Acta Physica Sinica, 2012, 61(14): 147301.doi:10.7498/aps.61.147301 |
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Zhang Lin, Han Chao, Ma Yong-Ji, Zhang Yi-Men, Zhang Yu-Ming.Gamma-ray radiation effect on Ni/4H-SiC SBD. Acta Physica Sinica, 2009, 58(4): 2737-2741.doi:10.7498/aps.58.2737 |
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Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin.Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica, 2008, 57(9): 6007-6012.doi:10.7498/aps.57.6007 |
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Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming, Che Yong, Wang Yue-Hu, Chen Liang.The extraction method for trap parameters in 4H-SiC MESFETs. Acta Physica Sinica, 2008, 57(5): 2871-2874.doi:10.7498/aps.57.2871 |
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Nie Hai, Zhang Bo, Tang Xian-Zhong.Electroluminescence of polymer doped small-molecules light-emitting diodes and the effects of doping trap. Acta Physica Sinica, 2007, 56(1): 263-267.doi:10.7498/aps.56.263 |
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Liu Hong Xia, Zheng Xue Feng, Hao Yue.Degradation and physical mechanism of NBT in deep submicron PMOSFET's. Acta Physica Sinica, 2005, 54(3): 1373-1377.doi:10.7498/aps.54.1373 |
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Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia.Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET. Acta Physica Sinica, 2003, 52(4): 830-833.doi:10.7498/aps.52.830 |
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ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN.RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATURE. Acta Physica Sinica, 2001, 50(12): 2434-2438.doi:10.7498/aps.50.2434 |
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REN HONG-XIA, HAO YUE, XU DONG-GANG.STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR. Acta Physica Sinica, 2000, 49(7): 1241-1248.doi:10.7498/aps.49.1241 |
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