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Liu Cheng, Li Ming, Wen Zhang, Gu Zhao-Yuan, Yang Ming-Chao, Liu Wei-Hua, Han Chuan-Yu, Zhang Yong, Geng Li, Hao Yue.Establishment of composite leakage model and design of GaN Schottky barrier diode with stepped field plate. Acta Physica Sinica, 2022, 71(5): 057301.doi:10.7498/aps.71.20211917 |
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.Composite device model and quasi-vertical GaN SBD with stepped field plate achieving BFOM of 73.81MW/cm2. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211917 |
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Tao Hong, Gao Dong-Yu, Liu Bai-Quan, Wang Lei, Zou Jian-Hua, Xu Miao, Peng Jun-Biao.Enhancement of tandem organic light-emitting diode performance by inserting an ultra-thin Ag layer in charge generation layer. Acta Physica Sinica, 2017, 66(1): 017302.doi:10.7498/aps.66.017302 |
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Ji Zeng-Chao, Chen Shi-Xiu, Gao Shen, Chen Jun, Tian Wei.Analysis on mechanism of radiating microwave from vacuum diode. Acta Physica Sinica, 2016, 65(14): 145202.doi:10.7498/aps.65.145202 |
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Chen Gao, Yang Yu-Jun, Guo Fu-Ming.Analysis on the cutoff frequency of high order harmonic generation in the crystal. Acta Physica Sinica, 2013, 62(8): 083202.doi:10.7498/aps.62.083202 |
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Liu Yu-Dong, Du Lei, Sun Peng, Chen Wen-Hao.The effect of electrostatic discharge on the I-V and low frequency noise characterization of Schottky barrier diodes. Acta Physica Sinica, 2012, 61(13): 137203.doi:10.7498/aps.61.137203 |
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Mo Qiu-Yan, Zhao Yan-Li.Frequency responses of communication avalanche photodiodes. Acta Physica Sinica, 2011, 60(7): 072902.doi:10.7498/aps.60.072902 |
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Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling.Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2008, 57(1): 472-476.doi:10.7498/aps.57.472 |
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Wang Yan-Xin, Zhang Qi-Feng, Sun Hui, Chang Yan-Ling, Wu Jin-Lei.Fabrication of ZnO nanowire-based diodes and their light-emitting properties. Acta Physica Sinica, 2008, 57(2): 1141-1144.doi:10.7498/aps.57.1141 |
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Li Bing-Qian, Liu Yu-Hua, Feng Yu-Chun.The power dissipation of equivalent series resistance and its influence on lumen efficiency of GaN based high power light-emitting diodes. Acta Physica Sinica, 2008, 57(1): 477-481.doi:10.7498/aps.57.477 |
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Zhang Jian-Ming, Zou De-Shu, Liu Si-Nan, Xu Chen, Shen Guang-Di.A novel AlGaInP thin-film light emitting diode with omni directional reflector. Acta Physica Sinica, 2007, 56(5): 2905-2909.doi:10.7498/aps.56.2905 |
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Zhang Yong-Hui, Chang An-Bi, Xiang Fei, Song Fa-Lun, Kang Qiang, Luo Min, Li Ming-Jia, Gong Sheng-Gang.Repetition rate of intense current electron-beam diodes using 20 GW pulsed source. Acta Physica Sinica, 2007, 56(10): 5754-5757.doi:10.7498/aps.56.5754 |
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Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang.Noise as a representation for reliability of light emitting diode. Acta Physica Sinica, 2006, 55(3): 1384-1389.doi:10.7498/aps.55.1384 |
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Sun Ke-Xu, Jiang Shao-En, Yi Rong-Qing, Cui Yan-Li, Ding Yong-Kun, Liu Shen-Ye.Research on time characteristics of soft X-ray diode. Acta Physica Sinica, 2006, 55(1): 68-75.doi:10.7498/aps.55.68 |
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
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Liu Li-Feng, Lü Hui-Bin, Dai Shou-Yu, Chen Zheng-Hao.Rectifying characteristics of La0.9Sr0.1MnO3/Si p-n diodes. Acta Physica Sinica, 2005, 54(5): 2342-2345.doi:10.7498/aps.54.2342 |
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YI MING-GUANG.TRIGGERED OSCILLATION IN TUNNEL DIODE CIRCUITS WITH NON-LINEAR BIAS. Acta Physica Sinica, 1974, 23(5): 23-42.doi:10.7498/aps.23.23 |
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CHUO CHI-TSANG, SHIUH GEN-TWEN.THE FIGURE OF MERIT FOR THE ALLOY-DIFFUSED PARAMETRIC DIODE. Acta Physica Sinica, 1964, 20(4): 311-326.doi:10.7498/aps.20.311 |
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SHIUH GEN-TWEN, CHUO CHI-TSANG.THE SERIES RESISTANCE AND CUTOFF FREQUENCY OF DOUBLE DIFFUSED PARAMETRIC DIODE. Acta Physica Sinica, 1964, 20(6): 540-549.doi:10.7498/aps.20.540 |