| [1] |
Yu Xue-Ling, Chen Feng-Xiang, Xiang Tao, Deng Wen, Liu Jia-Ning, Wang Li-Sheng.Research on the photoelectric modulation and resistive switching characteristic of ReSe2/WSe2memtransistor. Acta Physica Sinica, 2022, 0(0): .doi:10.7498/aps.7120221154 |
| [2] |
Hu Bing, Yu Dian-long, Liu Jiang-wei, Zhu Fu-lei, Zhang Zhen-fang.Shock vibration characteristics of fluid-structure interaction phononic crystal pipeline. Acta Physica Sinica, 2020, 69(19): 194301.doi:10.7498/aps.69.20200414 |
| [3] |
Zhang Zhen-Fang, Yu Dian-Long, Liu Jiang-Wei, Wen Ji-Hong.Properties of band gaps in phononic crystal pipe consisting of expansion chambers with extended inlet/outlet. Acta Physica Sinica, 2018, 67(7): 074301.doi:10.7498/aps.67.20172383 |
| [4] |
Liu Jing, Guo Fei, Gao Yong.Mechanism and characteristic analysis and optimization of SiGeC heterojunction bipolar transistor with super junction. Acta Physica Sinica, 2014, 63(4): 048501.doi:10.7498/aps.63.048501 |
| [5] |
Wang Yuan, Zhang Li-Zhong, Cao Jian, Lu Guang-Yi, Jia Song, Zhang Xing.Research on electrostatic discharge characteristics of tunnel field effect transistors. Acta Physica Sinica, 2014, 63(17): 178501.doi:10.7498/aps.63.178501 |
| [6] |
Ma Li, Shen Guang-Di, Chen Yi-Xin, Jiang Wen-Jing, Guo Wei-Ling, Xu Chen, Gao Zhi-Yuan.Investigation of the saturation characteristic and lifetime of the novel AlGaInP lightemitting diodes. Acta Physica Sinica, 2014, 63(3): 037201.doi:10.7498/aps.63.037201 |
| [7] |
Yang Jin-Hui, Song Jun-Qiang.Saturation property of mean growth of initial error for chaos systems. Acta Physica Sinica, 2012, 61(17): 170511.doi:10.7498/aps.61.170511 |
| [8] |
Hong Wu, Liang Lin, Yu Yue-Hui.Two-step switching method improved turn-on characteristic in reversely switching dynistor. Acta Physica Sinica, 2012, 61(5): 058501.doi:10.7498/aps.61.058501 |
| [9] |
Chen Xiao-Xue, Yao Ruo-He.DC characteristic research based on surface potential for a-Si:H thin-film transistor. Acta Physica Sinica, 2012, 61(23): 237104.doi:10.7498/aps.61.237104 |
| [10] |
Wang Xiong, Cai Xi-Kun, Yuan Zi-Jian, Zhu Xia-Ming, Qiu Dong-Jiang, Wu Hui-Zhen.Study of zinc tin oxide thin-film transistor. Acta Physica Sinica, 2011, 60(3): 037305.doi:10.7498/aps.60.037305 |
| [11] |
Wang Lei, Steve Yang.Analysis and modeling of quasi-saturation effect in high-voltage LDMOS transistors. Acta Physica Sinica, 2010, 59(1): 571-578.doi:10.7498/aps.59.571 |
| [12] |
Yang Sheng-Yi, Du Wen-Shu, Qi Jie-Ru, Lou Zhi-Dong.Optoelectronic characteristics of NPB-based vertical organic light-emitting transistors. Acta Physica Sinica, 2009, 58(5): 3427-3432.doi:10.7498/aps.58.3427 |
| [13] |
Yuan Guang-Cai, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Jiang Wei-Wei, Huang Jin-Zhao, Song Dan-Dan, Zhu Hai-Na, Huang Jin-Ying, Xu Xu-Rong.Study of the characteristics of organic thin film transistors based on different active layers of pentacene and CuPc thin films. Acta Physica Sinica, 2008, 57(9): 5911-5917.doi:10.7498/aps.57.5911 |
| [14] |
Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Zhu Bo, Cui Li-Jie, Gao Hong-Ling, Li Dong-Lin, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao.Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers. Acta Physica Sinica, 2007, 56(7): 4143-4147.doi:10.7498/aps.56.4143 |
| [15] |
Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min.Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica, 2007, 56(7): 4117-4121.doi:10.7498/aps.56.4117 |
| [16] |
Shu Bin, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying.Mathematical model of DC characteristic of SiGe charge injection transistors. Acta Physica Sinica, 2007, 56(2): 1105-1109.doi:10.7498/aps.56.1105 |
| [17] |
HAO YUE, ZHU JIAN-GANG, GUO LIN, ZHANG ZHENG-FAN.. Acta Physica Sinica, 2001, 50(1): 120-125.doi:10.7498/aps.50.120 |
| [18] |
JI GUANG-DA, WU HANG-SHENG.A NOTE ON THE THEORY OF MICROWAVE-INDUCED DC VOLTAGE PHENOMENON. Acta Physica Sinica, 1978, 27(1): 118-120.doi:10.7498/aps.27.118 |
| [19] |
CHEN XING-BI, YI MING-GUANG.INVESTIGATION ON THE EXPONENTIAL FACTOR OF Ic-VBECHARACTERISTICS OF TRANSISTOR AT LOW INJECTION LEVEL. Acta Physica Sinica, 1978, 27(1): 10-21.doi:10.7498/aps.27.10 |
| [20] |
WANG SHOU-CHIO.ON MEASUREMENT AND ANALYSIS OF FACTORS AFFECTING THE MAXIMUM FREQUENCY OF OSCILLATION OF TRANSISTORS. Acta Physica Sinica, 1962, 18(4): 194-206.doi:10.7498/aps.18.194 |
下载: