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Yu Xue-Ling, Chen Feng-Xiang, Xiang Tao, Deng Wen, Liu Jia-Ning, Wang Li-Sheng.Research on the photoelectric modulation and resistive switching characteristic of ReSe2/WSe2memtransistor. Acta Physica Sinica, 2022, 0(0): .doi:10.7498/aps.7120221154 |
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Gu Zhao-Qiao, Guo Hong-Xia, Pan Xiao-Yu, Lei Zhi-Feng, Zhang Feng-Qi, Zhang Hong, Ju An-An, Liu Yi-Tian.Total dose effect and annealing characteristics of silicon carbide field effect transistor devices under different stresses. Acta Physica Sinica, 2021, 70(16): 166101.doi:10.7498/aps.70.20210515 |
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Li Zhi-Peng, Li Jing, Sun Jing, Liu Yang, Fang Jin-Yong.High power microwave damage mechanism on high electron mobility transistor. Acta Physica Sinica, 2016, 65(16): 168501.doi:10.7498/aps.65.168501 |
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Wang Chong, Zhao Meng-Di, Pei Jiu-Qing, He Yun-Long, Li Xiang-Dong, Zheng Xue-Feng, Mao Wei, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue.Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatment. Acta Physica Sinica, 2016, 65(3): 038501.doi:10.7498/aps.65.038501 |
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Tan Ji, Zhu Yang-Jun, Lu Shuo-Jin, Tian Xiao-Li, Teng Yuan, Yang Fei, Zhang Guang-Yin, Shen Qian-Xing.Modeling and simulation of the insulated gate bipolar transistor turn-off voltage slope under inductive load. Acta Physica Sinica, 2016, 65(15): 158501.doi:10.7498/aps.65.158501 |
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Shi Lei, Feng Shi-Wei, Shi Bang-Bing, Yan Xin, Zhang Ya-Min.Degradation induced by voltage and current for AlGaN/GaN high-electron mobility transistor under on-state stress. Acta Physica Sinica, 2015, 64(12): 127303.doi:10.7498/aps.64.127303 |
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Liu Jing, Guo Fei, Gao Yong.Mechanism and characteristic analysis and optimization of SiGeC heterojunction bipolar transistor with super junction. Acta Physica Sinica, 2014, 63(4): 048501.doi:10.7498/aps.63.048501 |
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Wang Yuan, Zhang Li-Zhong, Cao Jian, Lu Guang-Yi, Jia Song, Zhang Xing.Research on electrostatic discharge characteristics of tunnel field effect transistors. Acta Physica Sinica, 2014, 63(17): 178501.doi:10.7498/aps.63.178501 |
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Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong.Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates. Acta Physica Sinica, 2013, 62(19): 196104.doi:10.7498/aps.62.196104 |
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Ren Xing-Rong, Chai Chang-Chun, Ma Zhen-Yang, Yang Yin-Tang, Qiao Li-Ping, Shi Chun-Lei.The damage effect and mechanism of bipolar transistors induced by injection of electromagnetic pulse from the base. Acta Physica Sinica, 2013, 62(6): 068501.doi:10.7498/aps.62.068501 |
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Chen Xiao-Xue, Yao Ruo-He.DC characteristic research based on surface potential for a-Si:H thin-film transistor. Acta Physica Sinica, 2012, 61(23): 237104.doi:10.7498/aps.61.237104 |
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Hong Wu, Liang Lin, Yu Yue-Hui.Two-step switching method improved turn-on characteristic in reversely switching dynistor. Acta Physica Sinica, 2012, 61(5): 058501.doi:10.7498/aps.61.058501 |
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You Hai-Long, Lan Jian-Chun, Fan Ju-Ping, Jia Xin-Zhang, Zha Wei.Research on characteristics degradation of n-metal-oxide-semiconductor field-effect transistor induced by hot carrier effect due to high power microwave. Acta Physica Sinica, 2012, 61(10): 108501.doi:10.7498/aps.61.108501 |
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Wang Xiong, Cai Xi-Kun, Yuan Zi-Jian, Zhu Xia-Ming, Qiu Dong-Jiang, Wu Hui-Zhen.Study of zinc tin oxide thin-film transistor. Acta Physica Sinica, 2011, 60(3): 037305.doi:10.7498/aps.60.037305 |
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Chai Chang-Chun, Xi Xiao-Wen, Ren Xing-Rong, Yang Yin-Tang, Ma Zhen-Yang.The damage effect and mechanism of the bipolar transistor induced by the intense electromagnetic pulse. Acta Physica Sinica, 2010, 59(11): 8118-8124.doi:10.7498/aps.59.8118 |
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Yang Sheng-Yi, Du Wen-Shu, Qi Jie-Ru, Lou Zhi-Dong.Optoelectronic characteristics of NPB-based vertical organic light-emitting transistors. Acta Physica Sinica, 2009, 58(5): 3427-3432.doi:10.7498/aps.58.3427 |
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Yuan Guang-Cai, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Xu Na, Sun Qin-Jun, Xu Xu-Rong.Study of the characteristics of organic thin film transistors with phenyltrimethoxysilane buffer under low gate modulation voltage. Acta Physica Sinica, 2009, 58(7): 4941-4947.doi:10.7498/aps.58.4941 |
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Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min.Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica, 2007, 56(7): 4117-4121.doi:10.7498/aps.56.4117 |
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Shu Bin, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying.Mathematical model of DC characteristic of SiGe charge injection transistors. Acta Physica Sinica, 2007, 56(2): 1105-1109.doi:10.7498/aps.56.1105 |
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.ОБ ИССЛЕДОВАНИИ СТАТИЧЕСКИХ ВОЛЬТАМПЕРНЫХ ХАРАКТЕРИСИК ТРАНЗИСТОРОВ В ОБЛАСТИ НАСЫЩЕНИЯ. Acta Physica Sinica, 1964, 20(6): 550-567.doi:10.7498/aps.20.550 |
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