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Zhou Ji-Yang, Li Qiang, Xu Jin-Shi, Li Chuan-Feng, Guo Guang-Can.Theoretical calculation of fiber cavity coupling silicon carbide membrance. Acta Physica Sinica, 2022, 71(6): 060303.doi:10.7498/aps.71.20211797 |
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Shi Jia-Yu, Lan You-Zhao.First-principles study of stacking effect on second harmonic generation of graphene-like two-dimensional silicon carbide. Acta Physica Sinica, 2018, 67(21): 217803.doi:10.7498/aps.67.20181337 |
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She Qing, Jiang Mei-Fu, Qian Nong, Pan Yue.Effects of preparation temperature of SiC intermediate layers on the hemocompatibility of SiC/F-DLC composite film. Acta Physica Sinica, 2014, 63(18): 185204.doi:10.7498/aps.63.185204 |
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Zou Xiao-Cui, Wu Mu-Sheng, Liu Gang, Ouyang Chu-Ying, Xu Bo.First-principles study on the electronic structures of β-SiC/carbon nanotube core-shell structures. Acta Physica Sinica, 2013, 62(10): 107101.doi:10.7498/aps.62.107101 |
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Gao Shang-Peng, Zhu Tong.Quasiparticle band structure calculation for SiC using self-consistent GW method. Acta Physica Sinica, 2012, 61(13): 137103.doi:10.7498/aps.61.137103 |
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Fang Chao, Liu Ma-Lin.The study of the Raman spectra of SiC layers in TRISO particles. Acta Physica Sinica, 2012, 61(9): 097802.doi:10.7498/aps.61.097802 |
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Zhou Nai-Gen, Hong Tao, Zhou Lang.A comparative study between MEAM and Tersoff potentials on the characteristics of melting and solidification of carborundum. Acta Physica Sinica, 2012, 61(2): 028101.doi:10.7498/aps.61.028101 |
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Song Kun, Chai Chang-Chun, Yang Yin-Tang, Jia Hu-Jun, Chen Bin, Ma Zhen-Yang.Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistor. Acta Physica Sinica, 2012, 61(17): 177201.doi:10.7498/aps.61.177201 |
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Qin Xi-Feng, Liang Yi, Wang Feng-Xiang, Li Shuang, Fu Gang, Ji Yan-Ju.Range and annealing behavior of Er ions implanted in SiC. Acta Physica Sinica, 2011, 60(6): 066101.doi:10.7498/aps.60.066101 |
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Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong.Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica, 2009, 58(5): 3302-3308.doi:10.7498/aps.58.3302 |
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Song Jiu-Xu, Yang Yin-Tang, Liu Hong-Xia, Zhang Zhi-Yong.First-principles study of the electonic structure of nitrogen-doped silicon carbide nanotubes. Acta Physica Sinica, 2009, 58(7): 4883-4887.doi:10.7498/aps.58.4883 |
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Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin.Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica, 2008, 57(9): 6007-6012.doi:10.7498/aps.57.6007 |
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