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Shi Jia-Yu, Lan You-Zhao.First-principles study of stacking effect on second harmonic generation of graphene-like two-dimensional silicon carbide. Acta Physica Sinica, 2018, 67(21): 217803.doi:10.7498/aps.67.20181337 |
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Wang Fei-Feng, Zhang Pei-Hong, Gao Ming-Ze.Research on the nonlinear conductivity characteristics of nano-SiC/silicone rubber composites. Acta Physica Sinica, 2014, 63(21): 217803.doi:10.7498/aps.63.217803 |
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Zou Xiao-Cui, Wu Mu-Sheng, Liu Gang, Ouyang Chu-Ying, Xu Bo.First-principles study on the electronic structures of β-SiC/carbon nanotube core-shell structures. Acta Physica Sinica, 2013, 62(10): 107101.doi:10.7498/aps.62.107101 |
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Fang Chao, Liu Ma-Lin.The study of the Raman spectra of SiC layers in TRISO particles. Acta Physica Sinica, 2012, 61(9): 097802.doi:10.7498/aps.61.097802 |
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Zhou Nai-Gen, Hong Tao, Zhou Lang.A comparative study between MEAM and Tersoff potentials on the characteristics of melting and solidification of carborundum. Acta Physica Sinica, 2012, 61(2): 028101.doi:10.7498/aps.61.028101 |
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Gao Shang-Peng, Zhu Tong.Quasiparticle band structure calculation for SiC using self-consistent GW method. Acta Physica Sinica, 2012, 61(13): 137103.doi:10.7498/aps.61.137103 |
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Song Jiu-Xu, Yang Yin-Tang, Guo Li-Xin, Wang Ping, Zhang Zhi-Yong.Investigation on influence of antisite defects on electronic structure and optical properties of silicon carbide nanotube. Acta Physica Sinica, 2012, 61(23): 237301.doi:10.7498/aps.61.237301 |
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Qin Xi-Feng, Liang Yi, Wang Feng-Xiang, Li Shuang, Fu Gang, Ji Yan-Ju.Range and annealing behavior of Er ions implanted in SiC. Acta Physica Sinica, 2011, 60(6): 066101.doi:10.7498/aps.60.066101 |
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Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong.Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica, 2009, 58(5): 3302-3308.doi:10.7498/aps.58.3302 |
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Song Jiu-Xu, Yang Yin-Tang, Liu Hong-Xia, Zhang Zhi-Yong.First-principles study of the electonic structure of nitrogen-doped silicon carbide nanotubes. Acta Physica Sinica, 2009, 58(7): 4883-4887.doi:10.7498/aps.58.4883 |
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Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin.Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica, 2008, 57(9): 6007-6012.doi:10.7498/aps.57.6007 |
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Dai Tao, Liu Yu-Zi, Zhang Ze.Electron holography determination of the growth polarity of GaN/AlGaN multi-quantum well structure. Acta Physica Sinica, 2006, 55(11): 5829-5834.doi:10.7498/aps.55.5829 |
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Yu Wei, He Jie, Sun Yun-Tao, Zhu Hai-Feng, Han Li, Fu Guang-Sheng.Pulse laser crystallization of silicon carbon thin films. Acta Physica Sinica, 2004, 53(6): 1930-1934.doi:10.7498/aps.53.1930 |
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