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Yan Da-Wei, Tian Kui-Kui, Yan Xiao-Hong, Li Wei-Ran, Yu Dao-Xin, Li Jin-Xiao, Cao Yan-Rong, Gu Xiao-Feng.Forward current transport and noise behavior of GaN Schottky diodes. Acta Physica Sinica, 2021, 70(8): 087201.doi:10.7498/aps.70.20201467 |
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Song Zhi-Jun, Lü Zhao-Zheng, Dong Quan, Feng Jun-Ya, Ji Zhong-Qing, Jin Yong, Lü Li.Shot noise measurement for tunnel junctions using a homemade cryogenic amplifier at dilution refrigerator temperatures. Acta Physica Sinica, 2019, 68(7): 070702.doi:10.7498/aps.68.20190114 |
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Wang Chen, Xu Yi-Hong, Li Cheng, Lin Hai-Jun, Zhao Ming-Jie.Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing method. Acta Physica Sinica, 2019, 68(17): 178501.doi:10.7498/aps.68.20190699 |
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Wang Dang-Hui, Xu Tian-Han.Low-frequency generation-recombination noise behaviors of blue/violet-light-emitting diode. Acta Physica Sinica, 2019, 68(12): 128104.doi:10.7498/aps.68.20190189 |
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Yan Zhi-Meng, Wang Jing, Guo Jian-Hong.Low-bias oscillations of shot noise as signatures of Majorana zero modes. Acta Physica Sinica, 2018, 67(18): 187302.doi:10.7498/aps.67.20172372 |
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi.Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica, 2015, 64(10): 107801.doi:10.7498/aps.64.107801 |
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Wang Dang-Hui, Xu Tian-Han, Wang Rong, Luo She-Ji, Yao Ting-Zhen.Research on emission transition mechanisms of InGaN/GaN multiple quantum well light-emitting diodes using low-frequency current noise. Acta Physica Sinica, 2015, 64(5): 050701.doi:10.7498/aps.64.050701 |
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Liu Yu-An, Zhuang Yi-Qi, Du Lei, Su Ya-Hui.1/f noise characterization gamma irradiation of GaN-based blue light-emitting diode. Acta Physica Sinica, 2013, 62(14): 140703.doi:10.7498/aps.62.140703 |
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Liu Yu-Dong, Du Lei, Sun Peng, Chen Wen-Hao.The effect of electrostatic discharge on the I-V and low frequency noise characterization of Schottky barrier diodes. Acta Physica Sinica, 2012, 61(13): 137203.doi:10.7498/aps.61.137203 |
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Sun Peng, Du Lei, He Liang, Chen Wen-Hao, Liu Yu-Dong, Zhao Ying.Radiation degradation mechanism of pn-junction diode based on 1/f noise variation. Acta Physica Sinica, 2012, 61(12): 127808.doi:10.7498/aps.61.127808 |
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Ma Li, Wang Dong-Fang, Gao Yong, Zhang Ru-Liang.Effects of p and n pillar widths on electrical characteristicsof super junction SiGe power diodes. Acta Physica Sinica, 2011, 60(4): 047303.doi:10.7498/aps.60.047303 |
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Liang Zhi-Peng, Dong Zheng-Chao.Shot noise in the semiconductor/ferromagnetic d-wave superconductor tunnel junction. Acta Physica Sinica, 2010, 59(2): 1288-1293.doi:10.7498/aps.59.1288 |
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Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang.The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica, 2008, 57(9): 5869-5874.doi:10.7498/aps.57.5869 |
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Halimulati, Abai, Baishan, Aimaiti.Boundary alternating current characteristics of an ideal p-n junction diode. Acta Physica Sinica, 2008, 57(2): 1161-1165.doi:10.7498/aps.57.1161 |
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Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang.Noise as a representation for reliability of light emitting diode. Acta Physica Sinica, 2006, 55(3): 1384-1389.doi:10.7498/aps.55.1384 |
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Zhang Zhi-Yong, Wang Tai-Hong.Luttinger parameter of carbon nanotubes investigated by shot noise experiment. Acta Physica Sinica, 2004, 53(3): 942-946.doi:10.7498/aps.53.942 |
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DONG ZHENG-CHAO, XING DING-YU, DONG JIN-MING.SHOT NOISE IN FERROMAGNET-SUPERCONDUCTOR TUNNELING JUNCTION. Acta Physica Sinica, 2001, 50(3): 556-560.doi:10.7498/aps.50.556 |
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SHE WEI-LONG, WU QI, LI QING-XING, YU ZHEN-XIN, ZHANG QING-LUN, CHEN HUAN-CHU.BACKWARD SCATTERING AND OPTICAL DIODE EFFECT IN Mn DOPED KNSBN CRYSTAL. Acta Physica Sinica, 1992, 41(10): 1706-1714.doi:10.7498/aps.41.1706 |
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YUAN HAO-XIN, LI QI-GUANG, JIANG SHAN, LU WEI, TONG FEI-MING, TANG DING-YUAN.HYDROSTATIC PRESSURE STUDIES OF DEEP LEVELS AND RELATED CURRENT MECHANISMS IN Hg1-xCdxTe n+-P PHOTODIODES. Acta Physica Sinica, 1990, 39(3): 464-471.doi:10.7498/aps.39.464 |
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