| [1] |
Xiao You-Peng, Wang Huai-Ping, Li Gang-Long.Numerical simulation of graphene/Ag2ZnSnSe4induced p-n junction solar cell. Acta Physica Sinica, 2021, 70(1): 018801.doi:10.7498/aps.70.20201194 |
| [2] |
Wang Shun-Li, Wang Ya-Chao, Guo Dao-You, Li Chao-Rong, Liu Ai-Ping.NiO/GaN p-n junction ultraviolet photodetector and self-powered technology. Acta Physica Sinica, 2021, 70(12): 128502.doi:10.7498/aps.70.20210154 |
| [3] |
Huangfu Xia-Hong, Liu Shuang-Fei, Xiao Jia-Jun, Zhang Bei, Peng Xin-Cun.Modulating infrared optoelectronic performance of GaInAsSb p-n junction by nanophotonic structure. Acta Physica Sinica, 2021, 70(11): 118501.doi:10.7498/aps.70.20201829 |
| [4] |
Liu Jie, Wang Lu, Sun Ling, Wang Wen-Qi, Wu Hai-Yan, Jiang Yang, Ma Zi-Guang, Wang Wen-Xin, Jia Hai-Qiang, Chen Hong.Anomalous light-to-electricity conversion of low dimensional semiconductor in p-n junction and interband transition quantum well infrared detector. Acta Physica Sinica, 2018, 67(12): 128101.doi:10.7498/aps.67.20180588 |
| [5] |
Zhang Zeng-Xing, Li Dong.Novel p-n junctions based on ambipolar two-dimensional crystals. Acta Physica Sinica, 2017, 66(21): 217302.doi:10.7498/aps.66.217302 |
| [6] |
Zhou Mei, Li Chun-Yan, Zhao De-Gang.A new method to estimate the p-GaN carrier concentration by analyzing the reversed current-voltage characteristic curve of p-n+ junction diode. Acta Physica Sinica, 2016, 65(19): 197302.doi:10.7498/aps.65.197302 |
| [7] |
Ma Li, Wang Dong-Fang, Gao Yong, Zhang Ru-Liang.Effects of p and n pillar widths on electrical characteristicsof super junction SiGe power diodes. Acta Physica Sinica, 2011, 60(4): 047303.doi:10.7498/aps.60.047303 |
| [8] |
Zhang Jin-Cheng, Zheng Peng-Tian, Dong Zuo-Dian, Duan Huan-Tao, Ni Jin-Yu, Zhang Jin-Feng, Hao Yue.The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure. Acta Physica Sinica, 2009, 58(5): 3409-3415.doi:10.7498/aps.58.3409 |
| [9] |
Zhang Shuang, Zhao De-Gang, Liu Zong-Shun, Zhu Jian-Jun, Zhang Shu-Ming, Wang Yu-Tian, Duan Li-Hong, Liu Wen-Bao, Jiang De-Sheng, Yang Hui.Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector. Acta Physica Sinica, 2009, 58(11): 7952-7957.doi:10.7498/aps.58.7952 |
| [10] |
Wang Chong, Liu Zhao-Lin, Liu Jun-Ming, Chen Xue-Mei, Cui Hao-Yang, Xia Chang-Sheng, Yang Yu, Lu Wei.The study on the rectifying properties of oxygen non-stoichiometric La0.9Ba0.1MnO3-δ/SrTiO3:Nb p-n heterojunction. Acta Physica Sinica, 2008, 57(1): 502-507.doi:10.7498/aps.57.502 |
| [11] |
Halimulati, Abai, Baishan, Aimaiti.Boundary alternating current characteristics of an ideal p-n junction diode. Acta Physica Sinica, 2008, 57(2): 1161-1165.doi:10.7498/aps.57.1161 |
| [12] |
He Meng, Lü Hui-Bin, Zhou Yue-Liang, Cheng Bo-Lin, Chen Zheng-Hao, Jin Kui-Juan, Yang Guo-Zhen.Fabrication and characterization of YBa2Cu3O7－δ/SrNb0.01Ti0.99O3 p-n junctions. Acta Physica Sinica, 2005, 54(3): 1370-1372.doi:10.7498/aps.54.1370 |
| [13] |
PENG YING-CAI, XU GANG-YI, HE YU-LIANG, LIU MING, LI YUE-XIA.CARRIER TRANSPORT PROPERTIES OF THE (n)nc-Si:H/(p)c-Si HETEROJUNCTION. Acta Physica Sinica, 2000, 49(12): 2466-2471.doi:10.7498/aps.49.2466 |
| [14] |
FENG XI-QI, LUO BIN-ZHANG.THE CHARACTERISTICS OF EPITAXIAL p-n JUNCTIONS GROWN BY METHOD OF SILICON CARBIDE CRYSTALS SUBLIMATION. Acta Physica Sinica, 1980, 29(1): 1-10.doi:10.7498/aps.29.1 |
| [15] |
WANG WEI-YUAN.MEASUREMENT OF CARRIER LIFETIME OF GaAs DIODES WITH p-n AND M-S JUNCTIONS BY STEP RECOVERY METHOD. Acta Physica Sinica, 1979, 28(3): 341-349.doi:10.7498/aps.28.341 |
| [16] |
TSCHEN DSIN-GUANG.SCHROTRAUSCHEN UND THERMISCHES RAUSCHEN IN EINER P-N-FLACHENDIODE. Acta Physica Sinica, 1965, 21(2): 383-389.doi:10.7498/aps.21.383 |
| [17] |
.. Acta Physica Sinica, 1965, 21(5): 1077-1079.doi:10.7498/aps.21.1077 |
| [18] |
.. Acta Physica Sinica, 1964, 20(3): 281-284.doi:10.7498/aps.20.281 |
| [19] |
YUAN KONG, CHEN NING-CHIANG.PRESSURE DEPENDENCE OF SOME TUNNELING PARAMETERS IN NARROW GALLIUM ARSENIDE P-N JUNCTIONS. Acta Physica Sinica, 1964, 20(8): 806-813.doi:10.7498/aps.20.806 |
| [20] |
WANG SHOU-WU.ON THE THEORY OF INJECTION OF MINORITY CARRIERS IN p-n ALLOY JUNCTIONS. Acta Physica Sinica, 1958, 14(1): 82-94.doi:10.7498/aps.14.82 |
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