| [1] |
Wang Shun-Li, Wang Ya-Chao, Guo Dao-You, Li Chao-Rong, Liu Ai-Ping.NiO/GaN p-n junction ultraviolet photodetector and self-powered technology. Acta Physica Sinica, 2021, 70(12): 128502.doi:10.7498/aps.70.20210154 |
| [2] |
Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan.Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica, 2020, 69(4): 047201.doi:10.7498/aps.69.20190640 |
| [3] |
Qi Wei-Jing, Zhang Meng, Pan Shuan, Wang Xiao-Lan, Zhang Jian-Li, Jiang Feng-Yi.Influences of InGaN/GaN superlattice thickness on the electronic and optical properties of GaN based blue light-emitting diodes grown on Si substrates. Acta Physica Sinica, 2016, 65(7): 077801.doi:10.7498/aps.65.077801 |
| [4] |
Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui.Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica, 2013, 62(11): 117103.doi:10.7498/aps.62.117103 |
| [5] |
Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan.Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica, 2011, 60(12): 127901.doi:10.7498/aps.60.127901 |
| [6] |
Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun.Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica, 2010, 59(2): 1258-1262.doi:10.7498/aps.59.1258 |
| [7] |
Deng Yi, Zhao De-Gang, Wu Liang-Liang, Liu Zong-Shun, Zhu Jian-Jun, Jiang De-Sheng, Zhang Shu-Ming, Liang Jun-Wu.Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector. Acta Physica Sinica, 2010, 59(12): 8903-8909.doi:10.7498/aps.59.8903 |
| [8] |
Zhou Mei, Zhao De-Gang.A new p-n structure ultraviolet photodetector with p－-GaN active region. Acta Physica Sinica, 2009, 58(10): 7255-7260.doi:10.7498/aps.58.7255 |
| [9] |
Xu Sheng-Rui, Zhang Jin-Cheng, Li Zhi-Ming, Zhou Xiao-Wei, Xu Zhi-Hao, Zhao Guang-Cai, Zhu Qing-Wei, Zhang Jin-Feng, Mao Wei, Hao Yue.The triangular pits eliminate of (1120) a-plane GaN growth by metal-orgamic chemical vapor deposition. Acta Physica Sinica, 2009, 58(8): 5705-5708.doi:10.7498/aps.58.5705 |
| [10] |
Zhou Mei, Zhao De-Gang.Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica, 2008, 57(7): 4570-4574.doi:10.7498/aps.57.4570 |
| [11] |
Zhou Mei, Chang Qing-Ying, Zhao De-Gang.A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector. Acta Physica Sinica, 2008, 57(4): 2548-2553.doi:10.7498/aps.57.2548 |
| [12] |
Shen Ye, Xing Huai-Zhong, Yu Jian-Guo, Lü Bin, Mao Hui-Bing, Wang Ji-Qing.Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Acta Physica Sinica, 2007, 56(6): 3453-3457.doi:10.7498/aps.56.3453 |
| [13] |
Guo Liang-Liang, Feng Qian, Ma Xiang-Bai, Hao Yue, Liu Jie.Relation between breakdown voltage and current collapse in GaN FP-HEMTs. Acta Physica Sinica, 2007, 56(5): 2900-2904.doi:10.7498/aps.56.2900 |
| [14] |
Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong.Study on optical properties of Er/Er+O doped GaN thin films. Acta Physica Sinica, 2007, 56(3): 1621-1626.doi:10.7498/aps.56.1621 |
| [15] |
Zhou Mei, Zuo Shu-Hua, Zhao De-Gang.A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica, 2007, 56(9): 5513-5517.doi:10.7498/aps.56.5513 |
| [16] |
Meng Kang, Jiang Sen-Lin, Hou Li-Na, Li Chan, Wang Kun, Ding Zhi-Bo, Yao Shu-De.Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica, 2006, 55(5): 2476-2481.doi:10.7498/aps.55.2476 |
| [17] |
Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong.Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica, 2006, 55(3): 1407-1412.doi:10.7498/aps.55.1407 |
| [18] |
Wan Wei, Tang Chun-Yan, Wang Yu-Mei, Li Fang-Hua.A study on the stacking fault in GaN crystals by high-resolution electron microscope imaging. Acta Physica Sinica, 2005, 54(9): 4273-4278.doi:10.7498/aps.54.4273 |
| [19] |
Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming.Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition. Acta Physica Sinica, 2005, 54(11): 5450-5454.doi:10.7498/aps.54.5450 |
| [20] |
ZHANG DE-HENG, LIU YUN-YAN, ZHANG DE-JUN.THE UV PHOTOCONDUCTIVITY OF n-TYPE GaN FILMSDEPOSITED BY MOCVD. Acta Physica Sinica, 2001, 50(9): 1800-1804.doi:10.7498/aps.50.1800 |
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