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Cao Wen-Yu, Zhang Ya-Ting, Wei Yan-Feng, Zhu Li-Juan, Xu Ke, Yan Jia-Sheng, Zhou Shu-Xing, Hu Xiao-Dong.Strain modulation effect of superlattice interlayer on InGaN/GaN multiple quantum well. Acta Physica Sinica, 2024, 73(7): 077201.doi:10.7498/aps.73.20231677 |
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Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan.Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica, 2020, 69(4): 047201.doi:10.7498/aps.69.20190640 |
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Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang.Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903.doi:10.7498/aps.66.067903 |
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Yang Shuang-Bo.Effect of temperature and external magnetic field on the structure of electronic state of the Si-uniformlly-doped GaAs quantum well. Acta Physica Sinica, 2014, 63(5): 057301.doi:10.7498/aps.63.057301 |
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Zhao Feng-Qi, Zhang Min, Li Zhi-Qiang, Ji Yan-Ming.Effects of optical phonon and built-in electric field on the binding energy of bound polarons in a wurtzite In0.19Ga0.81N/GaN quantum well. Acta Physica Sinica, 2014, 63(17): 177101.doi:10.7498/aps.63.177101 |
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Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui.Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica, 2013, 62(11): 117103.doi:10.7498/aps.62.117103 |
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Zhang Pan-Jun, Sun Hui-Qing, Guo Zhi-You, Wang Du-Yang, Xie Xiao-Yu, Cai Jin-Xin, Zheng Huan, Xie Nan, Yang Bin.The spectrum-control of dual-wavelength LED with quantum dots planted in quantum wells. Acta Physica Sinica, 2013, 62(11): 117304.doi:10.7498/aps.62.117304 |
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Wang Yan-Wen, Wu Hua-Rui.Exciton states and optical properties in zinc-blende GaN/AlGaN quantum dot. Acta Physica Sinica, 2012, 61(10): 106102.doi:10.7498/aps.61.106102 |
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Chen Jun, Fan Guang-Han, Zhang Yun-Yan.The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers. Acta Physica Sinica, 2012, 61(17): 178504.doi:10.7498/aps.61.178504 |
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Wang Du-Yang, Sun Hui-Qing, Xie Xiao-Yu, Zhang Pan-Jun.Theoretical study of luminance of GaN quantum dots planted in quantum well. Acta Physica Sinica, 2012, 61(22): 227303.doi:10.7498/aps.61.227303 |
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Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan.Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica, 2011, 60(12): 127901.doi:10.7498/aps.60.127901 |
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Zhang Yun-Yan, Fan Guan-Han.Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED. Acta Physica Sinica, 2011, 60(1): 018502.doi:10.7498/aps.60.018502 |
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Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun.Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica, 2010, 59(2): 1258-1262.doi:10.7498/aps.59.1258 |
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Zhou Mei, Zhao De-Gang.Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica, 2008, 57(7): 4570-4574.doi:10.7498/aps.57.4570 |
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Ding Zhi-Bo, Wang Kun, Chen Tian-Xiang, Chen Di, Yao Shu-De.Investigation on the formation mechanism and diffusion of the electrode metal of oxidized Au/Ni/p-GaN ohmic contact in different alloying time. Acta Physica Sinica, 2008, 57(4): 2445-2449.doi:10.7498/aps.57.2445 |
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Meng Kang, Jiang Sen-Lin, Hou Li-Na, Li Chan, Wang Kun, Ding Zhi-Bo, Yao Shu-De.Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica, 2006, 55(5): 2476-2481.doi:10.7498/aps.55.2476 |
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Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong.Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica, 2006, 55(3): 1407-1412.doi:10.7498/aps.55.1407 |
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Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming.Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition. Acta Physica Sinica, 2005, 54(11): 5450-5454.doi:10.7498/aps.54.5450 |
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Shao Jia-Ping, Hu Hui, Guo Wen-Ping, Wang Lai, Luo Yi, Sun Chang-Zheng, Hao Zhi-Biao.Study on electroluminescence spectra of InxGa1－xN/GaN-MQWs materials with high indium contents. Acta Physica Sinica, 2005, 54(8): 3905-3909.doi:10.7498/aps.54.3905 |
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Li Pei-Xian, Hao Yue, Fan Long, Zhang Jin-Cheng, Zhang Jin-Feng, Zhang Xiao-Ju.AlGaN/GaN heterojunction wavefunction half analytic model based on quantum distu rbance. Acta Physica Sinica, 2003, 52(12): 2985-2988.doi:10.7498/aps.52.2985 |
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