| [1] |
Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan.Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica, 2020, 69(4): 047201.doi:10.7498/aps.69.20190640 |
| [2] |
Fang Yu, Wu Xing-Zhi, Chen Yong-Qiang, Yang Jun-Yi, Song Ying-Lin.Study on two-photon induced ultrafast carrier dynamcis in Ge-doped GaN by transient absorption spectroscopy. Acta Physica Sinica, 2020, 69(16): 168701.doi:10.7498/aps.69.20200397 |
| [3] |
Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang.Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903.doi:10.7498/aps.66.067903 |
| [4] |
Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei.Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402.doi:10.7498/aps.65.038402 |
| [5] |
Huang Bin-Bin, Xiong Chuan-Bing, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Tang Ying-Wen, Quan Zhi-Jue, Xu Long-Quan, Zhang Meng, Wang Li, Fang Wen-Qing, Liu Jun-Lin, Jiang Feng-Yi.Electroluminescence properties of vertical structure GaN based LED on silicon and copper submount at different temperatures and current densities. Acta Physica Sinica, 2014, 63(21): 217806.doi:10.7498/aps.63.217806 |
| [6] |
Li Qian-Qian, Hao Qiu-Yan, Li Ying, Liu Guo-Dong.Theory study of rare earth (Ce, Pr) doped GaN in electronic structrue and optical property. Acta Physica Sinica, 2013, 62(1): 017103.doi:10.7498/aps.62.017103 |
| [7] |
Chen Hao-Ran, Yang Lin-An, Zhu Zhang-Ming, Lin Zhi-Yu, Zhang Jin-Cheng.Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode. Acta Physica Sinica, 2013, 62(21): 217301.doi:10.7498/aps.62.217301 |
| [8] |
Wang Du-Yang, Sun Hui-Qing, Xie Xiao-Yu, Zhang Pan-Jun.Theoretical study of luminance of GaN quantum dots planted in quantum well. Acta Physica Sinica, 2012, 61(22): 227303.doi:10.7498/aps.61.227303 |
| [9] |
Liu Xiao-Ping, Fan Guang-Han, Zhang Yun-Yan, Zheng Shu-Wen, Gong Chang-Chun, Wang Yong-Li, Zhang Tao.Numerical study of spectrum-control in dual-wavelength LED with doped quantum well barriers of different doping concentration. Acta Physica Sinica, 2012, 61(13): 138503.doi:10.7498/aps.61.138503 |
| [10] |
Chen Jun, Fan Guang-Han, Zhang Yun-Yan.The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers. Acta Physica Sinica, 2012, 61(17): 178504.doi:10.7498/aps.61.178504 |
| [11] |
Chen Jun, Fan Guang-Han, Zhang Yun-Yan.Investigation of spectral regulation in dual- wavelength light-emitting diodes by using the selective p-doped barriers. Acta Physica Sinica, 2012, 61(8): 088502.doi:10.7498/aps.61.088502 |
| [12] |
Zhang Yun-Yan, Fan Guan-Han.Theoretical study of the effect of changes in the number of quantum wells of dual-wavelength LED. Acta Physica Sinica, 2011, 60(7): 078504.doi:10.7498/aps.60.078504 |
| [13] |
Zhang Yun-Yan, Fan Guang-Han, Zhang Yong, Zheng Shu-Wen.Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer. Acta Physica Sinica, 2011, 60(2): 028503.doi:10.7498/aps.60.028503 |
| [14] |
Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao.Analysis of failure mechanism of GaN-based white light-emitting diode. Acta Physica Sinica, 2010, 59(7): 5002-5009.doi:10.7498/aps.59.5002 |
| [15] |
Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao.Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodes. Acta Physica Sinica, 2010, 59(2): 1268-1274.doi:10.7498/aps.59.1268 |
| [16] |
Xiong Chuan-Bing, Jiang Feng-Yi, Fang Wen-Qing, Wang Li, Mo Chun-Lan.Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate. Acta Physica Sinica, 2008, 57(5): 3176-3181.doi:10.7498/aps.57.3176 |
| [17] |
Shen Ye, Xing Huai-Zhong, Yu Jian-Guo, Lü Bin, Mao Hui-Bing, Wang Ji-Qing.Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Acta Physica Sinica, 2007, 56(6): 3453-3457.doi:10.7498/aps.56.3453 |
| [18] |
Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di.Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2007, 56(10): 6003-6007.doi:10.7498/aps.56.6003 |
| [19] |
Liu Shi-Feng, Qin Guo-Gang, You Li-Ping, Zhang Ji-Cai, Fu Zhu-Xi, Dai Lun.Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an In-doping technique. Acta Physica Sinica, 2005, 54(9): 4329-4333.doi:10.7498/aps.54.4329 |
| [20] |
Song Shu-Fang, Zhou Sheng-Qiang, Chen Wei-De, Zhu Jian-Jun, Chen Chang-Yong, Xu Zhen-Jia.RBS/channeling study and photoluminscence properties of Er-implanted GaN. Acta Physica Sinica, 2003, 52(10): 2558-2562.doi:10.7498/aps.52.2558 |
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