| [1] |
Li Jian-Jun.Design of active region for GaAsP/AlGaAs tensile strain quantum well laser diodes near 800 nm wavelength. Acta Physica Sinica, 2018, 67(6): 067801.doi:10.7498/aps.67.20171816 |
| [2] |
Ma Li-Ya, Li Yu-Dong, Guo Qi, Ai Er-Ken, Wang Hai-Jiao, Zeng Jun-Zhe.Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials. Acta Physica Sinica, 2015, 64(15): 154217.doi:10.7498/aps.64.154217 |
| [3] |
Liu Fu-Cheng, Yan Wen, Wang De-Zhen.Two-dimensional simulation of atmospheric pressure cold plasma jets in a needle-plane electrode configuration. Acta Physica Sinica, 2013, 62(17): 175204.doi:10.7498/aps.62.175204 |
| [4] |
Wang Xin-Xin, Fan Ding, Huang Jian-Kang, Huang Yong.Numerical simulation of coupled arc in double electrode tungsten inert gas welding. Acta Physica Sinica, 2013, 62(22): 228101.doi:10.7498/aps.62.228101 |
| [5] |
Li Chun-Lei, Xu Yan, Zhang Yan-Xiang, Ye Bao-Sheng.Photon-assisted electron spin tunnelling in double-well potential. Acta Physica Sinica, 2013, 62(10): 107301.doi:10.7498/aps.62.107301 |
| [6] |
Li Li, Liu Hong-Xia, Yang Zhao-Nian.Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistor. Acta Physica Sinica, 2012, 61(16): 166101.doi:10.7498/aps.61.166101 |
| [7] |
Chen Jun, Fan Guang-Han, Zhang Yun-Yan.The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers. Acta Physica Sinica, 2012, 61(17): 178504.doi:10.7498/aps.61.178504 |
| [8] |
Liu Xiao-Ping, Fan Guang-Han, Zhang Yun-Yan, Zheng Shu-Wen, Gong Chang-Chun, Wang Yong-Li, Zhang Tao.Numerical study of spectrum-control in dual-wavelength LED with doped quantum well barriers of different doping concentration. Acta Physica Sinica, 2012, 61(13): 138503.doi:10.7498/aps.61.138503 |
| [9] |
Chen Jun, Fan Guang-Han, Zhang Yun-Yan.Investigation of spectral regulation in dual- wavelength light-emitting diodes by using the selective p-doped barriers. Acta Physica Sinica, 2012, 61(8): 088502.doi:10.7498/aps.61.088502 |
| [10] |
Zhang Yun-Yan, Fan Guan-Han.Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED. Acta Physica Sinica, 2011, 60(1): 018502.doi:10.7498/aps.60.018502 |
| [11] |
Zhang Yun-Yan, Fan Guang-Han, Zhang Yong, Zheng Shu-Wen.Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer. Acta Physica Sinica, 2011, 60(2): 028503.doi:10.7498/aps.60.028503 |
| [12] |
Jiang Wen-Long, Meng Zhao-Hui, Cong Lin, Wang Jin, Wang Li-Zhong, Han Qiang, Meng Fan-Chao, Gao Yong-Hui.The role of magnetic fields on the efficiency of OLED of double quantum well structures. Acta Physica Sinica, 2010, 59(9): 6642-6646.doi:10.7498/aps.59.6642 |
| [13] |
Deng Feng, Zhao Zheng-Yu, Shi Run, Zhang Yuan-Nong.Two-dimensional simulation of high-frequency-induced large-scale irregularities in F region. Acta Physica Sinica, 2009, 58(10): 7382-7391.doi:10.7498/aps.58.7382 |
| [14] |
Li Wei-Jun, Zhang Bo, Xu Wen-Lan, Lu Wei.Experimental and theoretical study of blue InGaN/GaN multiple quantum well blue light-emitting diodes. Acta Physica Sinica, 2009, 58(5): 3421-3426.doi:10.7498/aps.58.3421 |
| [15] |
Wang Ke, Zheng Wan-Hua, Ren Gang, Du Xiao-Yu, Xing Ming-Xin, Chen Liang-Hui.Design and optimization of photonic crystal coupling layer for bi-color quantum well infrared photodetectors. Acta Physica Sinica, 2008, 57(3): 1730-1736.doi:10.7498/aps.57.1730 |
| [16] |
Zhang Ting, Ding Bo-Jiang.Simulation of effect of atomic process on poloidal CXRS measurement. Acta Physica Sinica, 2006, 55(3): 1534-1538.doi:10.7498/aps.55.1534 |
| [17] |
Zhu Chang-Sheng, Wang Zhi-Ping, Jing Tao, Xiao Rong-Zhen.Numerical simulation of solute segregation patterns for a binary alloy using phase-field approach. Acta Physica Sinica, 2006, 55(3): 1502-1507.doi:10.7498/aps.55.1502 |
| [18] |
Xu Xiao-Hua, Niu Zhi-Chuan, Ni Hai-Qiao, Xu Ying-Qiang, Zhang Wei, He Zheng-Hong, Han Qin, Wu Rong-Han, Jiang De-Sheng.Photoluminescence study of (GaAs1－xSbx/InyGa1－yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy. Acta Physica Sinica, 2005, 54(6): 2950-2954.doi:10.7498/aps.54.2950 |
| [19] |
Yuan Xing-Qiu, Chen Chong-Yang, Li Hui, Zhao Tai-Zhe, Guo Wen-Kang, Xu Ping.Numerical simulation of the evolution of highly charged ions in an electron-bea m ion trap. Acta Physica Sinica, 2003, 52(8): 1906-1910.doi:10.7498/aps.52.1906 |
| [20] |
.. Acta Physica Sinica, 2002, 51(2): 367-371.doi:10.7498/aps.51.367 |
下载: