| [1] |
You Ming-Hui, Li Xue, Li Shi-Jun, Liu Guo-Jun.Growth of lattice matched InAs/AlSb superlattices by molecular beam epitaxy. Acta Physica Sinica, 2023, 72(1): 014203.doi:10.7498/aps.72.20221383 |
| [2] |
Du An-Tian, Liu Ruo-Tao, Cao Chun-Fang, Han Shi-Xian, Wang Hai-Long, Gong Qian.Improving structure design of active region of InAs quantum dots by using InAs/GaAs digital alloy superlattice. Acta Physica Sinica, 2023, 72(12): 128101.doi:10.7498/aps.72.20230270 |
| [3] |
Li Geng, Guo Hui, Gao Hong-Jun.Novel two-dimensional materials and their heterostructures constructed in ultra-high vacuum. Acta Physica Sinica, 2022, 71(10): 106801.doi:10.7498/aps.71.20212407 |
| [4] |
Zheng Xiao-Hu, Zhang Jian-Feng, Du Rui-Rui.Comparative study on epitaxial growth of stanene and bismuthene on InSb(111) substrate. Acta Physica Sinica, 2022, 71(18): 186401.doi:10.7498/aps.71.20221024 |
| [5] |
Li Pei-Gen, Zhang Ji-Hai, Tao Ye, Zhong Ding-Yong.Two-dimensional magnetic transition metal halides: molecular beam epitaxy growth and physical property modulation. Acta Physica Sinica, 2022, 71(12): 127505.doi:10.7498/aps.71.20220727 |
| [6] |
Wang Xing-Yue, Zhang Hui, Ruan Zi-Lin, Hao Zhen-Liang, Yang Xiao-Tian, Cai Jin-Ming, Lu Jian-Chen.Research progress of monolayer two-dimensional atomic crystal materials grown by molecular beam epitaxy in ultra-high vacuum conditions. Acta Physica Sinica, 2020, 69(11): 118101.doi:10.7498/aps.69.20200174 |
| [7] |
Zhang Ma-Lin, Ge Jian-Feng, Duan Ming-Chao, Yao Gang, Liu Zhi-Long, Guan Dan-Dan, Li Yao-Yi, Qian Dong, Liu Can-Hua, Jia Jin-Feng.Molecular beam epitaxy growth of multilayer FeSe thin film on SrTiO3 (001). Acta Physica Sinica, 2016, 65(12): 127401.doi:10.7498/aps.65.127401 |
| [8] |
Liu Ke, Ma Wen-Quan, Huang Jian-Liang, Zhang Yan-Hua, Cao Yu-Lian, Huang Wen-Jun, Zhao Cheng-Cheng.Three-color InAs/GaAs quantum dot infrared photodetector with AlGaAs inserting layer. Acta Physica Sinica, 2016, 65(10): 108502.doi:10.7498/aps.65.108502 |
| [9] |
Yang Wen-Xian, Ji Lian, Dai Pan, Tan Ming, Wu Yuan-Yuan, Lu Jian-Ya, Li Bao-Ji, Gu Jun, Lu Shu-Long, Ma Zhong-Quan.Study on photoluminescence properties of 1.05 eV InGaAsP layers grown by molecular beam epitaxy. Acta Physica Sinica, 2015, 64(17): 177802.doi:10.7498/aps.64.177802 |
| [10] |
Zhu Meng-Yao, Lu Jun, Ma Jia-Lin, Li Li-Xia, Wang Hai-Long, Pan Dong, Zhao Jian-Hua.Molecular-beam epitaxy of high-quality diluted magnetic semiconductor (Ga, Mn)Sb single-crystalline films. Acta Physica Sinica, 2015, 64(7): 077501.doi:10.7498/aps.64.077501 |
| [11] |
Ma Li-Ya, Li Yu-Dong, Guo Qi, Ai Er-Ken, Wang Hai-Jiao, Zeng Jun-Zhe.Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials. Acta Physica Sinica, 2015, 64(15): 154217.doi:10.7498/aps.64.154217 |
| [12] |
Wang Meng, Ou Yun-Bo, Li Fang-Sen, Zhang Wen-Hao, Tang Chen-Jia, Wang Li-Li, Xue Qi-Kun, Ma Xu-Cun.Molecular beam epitaxy of single unit-cell FeSe superconducting films on SrTiO3(001). Acta Physica Sinica, 2014, 63(2): 027401.doi:10.7498/aps.63.027401 |
| [13] |
Wan Wen-Jian, Yin Rong, Tan Zhi-Yong, Wang Feng, Han Ying-Jun, Cao Jun-Cheng.Study of 2.9 THz quantum cascade laser based on bound-to-continuum transition. Acta Physica Sinica, 2013, 62(21): 210701.doi:10.7498/aps.62.210701 |
| [14] |
Li Li, Liu Hong-Xia, Yang Zhao-Nian.Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistor. Acta Physica Sinica, 2012, 61(16): 166101.doi:10.7498/aps.61.166101 |
| [15] |
Su Shao-Jian, Wang Wei, Zhang Guang-Ze, Hu Wei-Xuan, Bai An-Qi, Xue Chun-Lai, Zuo Yu-Hua, Cheng Bu-Wen, Wang Qi-Ming.Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2011, 60(2): 028101.doi:10.7498/aps.60.028101 |
| [16] |
Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao.InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2010, 59(11): 8026-8030.doi:10.7498/aps.59.8026 |
| [17] |
Chang Jun, Li Hua, Han Ying-Jun, Tan Zhi-Yong, Cao Jun-Cheng.Material growth and characterization of terahertz quantum-cascade lasers. Acta Physica Sinica, 2009, 58(10): 7083-7087.doi:10.7498/aps.58.7083 |
| [18] |
Liu Lin-Sheng, Liu Su, Wang Wen-Xin, Zhao Hong-Ming, Liu Bao-Li, Jiang Zhong-Wei, Gao Han-Chao, Wang Jia, Huang Qing-An, Chen Hong, Zhou Jun-Ming.Optimization of GaAs (110) quantum well material growth technology by reflection high energy electron diffraction. Acta Physica Sinica, 2007, 56(6): 3355-3359.doi:10.7498/aps.56.3355 |
| [19] |
.. Acta Physica Sinica, 2002, 51(2): 367-371.doi:10.7498/aps.51.367 |
| [20] |
JING CHAO, JIN XIAO-FENG, DONG GUO-SHENG, GONG XIAO-YAN, YU LI-MING, ZHENG WEI-MIN.EXCHANGE BIASING IN MOLECULAR-BEAM-EPITAXY-GROWN Fe/Fe50Mn50 BILAYERS. Acta Physica Sinica, 2000, 49(10): 2022-2026.doi:10.7498/aps.49.2022 |
下载: