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Lin Qian, Xie Pu-Chu, Hu Jian-Bo, Zhang Feng-Guo, Wang Pei, Wang Yong-Gang.Numerical simulation on dynamic damage evolution of high pure copper with different grain sizes. Acta Physica Sinica, 2021, 70(20): 204601.doi:10.7498/aps.70.20210726 |
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Pan Hong-Ying, Quan Zhi-Jue.Effects of p-layer hole concentration and thickness on performance of p-i-n InGaN homojunction solar cells. Acta Physica Sinica, 2019, 68(19): 196103.doi:10.7498/aps.68.20191042 |
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Zhou Jian-Hong, Tong Bao-Hong, Wang Wei, Su Jia-Lei.Numerical simulation of deformation and rupture process of bubble in an oil film impacted by an oil droplet. Acta Physica Sinica, 2018, 67(11): 114701.doi:10.7498/aps.67.20180133 |
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Liu Fu-Cheng, Yan Wen, Wang De-Zhen.Two-dimensional simulation of atmospheric pressure cold plasma jets in a needle-plane electrode configuration. Acta Physica Sinica, 2013, 62(17): 175204.doi:10.7498/aps.62.175204 |
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Wang Xin-Xin, Fan Ding, Huang Jian-Kang, Huang Yong.Numerical simulation of coupled arc in double electrode tungsten inert gas welding. Acta Physica Sinica, 2013, 62(22): 228101.doi:10.7498/aps.62.228101 |
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Chen Jun, Fan Guang-Han, Zhang Yun-Yan.The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers. Acta Physica Sinica, 2012, 61(17): 178504.doi:10.7498/aps.61.178504 |
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Gao Yang, Lü Qiang, Wang Yang, Liu Zhan-Bo.Effects of doping concentration and sintering temperature on luminescence of CaWO4:Eu3+ phosphor. Acta Physica Sinica, 2012, 61(7): 077802.doi:10.7498/aps.61.077802 |
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Chen Jun, Fan Guang-Han, Zhang Yun-Yan.Investigation of spectral regulation in dual- wavelength light-emitting diodes by using the selective p-doped barriers. Acta Physica Sinica, 2012, 61(8): 088502.doi:10.7498/aps.61.088502 |
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Zhang Yun-Yan, Fan Guan-Han.Theoretical study of the effect of changes in the number of quantum wells of dual-wavelength LED. Acta Physica Sinica, 2011, 60(7): 078504.doi:10.7498/aps.60.078504 |
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Zhang Yun-Yan, Fan Guan-Han.Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED. Acta Physica Sinica, 2011, 60(1): 018502.doi:10.7498/aps.60.018502 |
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Zhang Yun-Yan, Fan Guang-Han, Zhang Yong, Zheng Shu-Wen.Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer. Acta Physica Sinica, 2011, 60(2): 028503.doi:10.7498/aps.60.028503 |
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Geng Shao-Fei, Tang De-Li, Zhao Jie, Qiu Xiao-Ming.Particle-in-cell simulation of a cylindrical Hall anode layer plasma accelerator. Acta Physica Sinica, 2009, 58(8): 5520-5525.doi:10.7498/aps.58.5520 |
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Deng Feng, Zhao Zheng-Yu, Shi Run, Zhang Yuan-Nong.Two-dimensional simulation of high-frequency-induced large-scale irregularities in F region. Acta Physica Sinica, 2009, 58(10): 7382-7391.doi:10.7498/aps.58.7382 |
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Li Wei-Jun, Zhang Bo, Xu Wen-Lan, Lu Wei.Experimental and theoretical study of blue InGaN/GaN multiple quantum well blue light-emitting diodes. Acta Physica Sinica, 2009, 58(5): 3421-3426.doi:10.7498/aps.58.3421 |
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Gan Zong-Song, Yu Hua, Li Yan-Ming, Wang Ya-Nan, Chen Hui, Zhao Li-Juan.Investigation on up-conversion luminescence of Tm3+ and Yb3+ codoped oxy-fluorosilicate glass ceramics. Acta Physica Sinica, 2008, 57(9): 5699-5704.doi:10.7498/aps.57.5699 |
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Zhang Ting, Ding Bo-Jiang.Simulation of effect of atomic process on poloidal CXRS measurement. Acta Physica Sinica, 2006, 55(3): 1534-1538.doi:10.7498/aps.55.1534 |
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Zhu Chang-Sheng, Wang Zhi-Ping, Jing Tao, Xiao Rong-Zhen.Numerical simulation of solute segregation patterns for a binary alloy using phase-field approach. Acta Physica Sinica, 2006, 55(3): 1502-1507.doi:10.7498/aps.55.1502 |
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Chen Bing-Yan, Liu Yue-Hui, Chen Dong-Dan, Jiang Zhong-Hong.Influence of concentration of Er3+ ions on luminescence and fluorescence lifetime in TeO2-ZnO-Na2O-K2O glasses. Acta Physica Sinica, 2005, 54(7): 3418-3423.doi:10.7498/aps.54.3418 |
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Yuan Xing-Qiu, Chen Chong-Yang, Li Hui, Zhao Tai-Zhe, Guo Wen-Kang, Xu Ping.Numerical simulation of the evolution of highly charged ions in an electron-bea m ion trap. Acta Physica Sinica, 2003, 52(8): 1906-1910.doi:10.7498/aps.52.1906 |
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ZHOU YU-GANG, SHEN BO, LIU JIE, ZHOU HUI-MEI, YU HUI-QIANG, ZHANG RONG, SHI YI, ZHENG YOU-DOU.EXTRACTION OF POLARIZATION-INDUCED CHARGE DENSITY INMODULATION-DOPED AlxGa1-xN/GaN HETEROSTRUCTURETHROUGH THE SIMULATION OF THE SCHOTTKY CAPACITANCE-VOLTAGE CHARACTERISTICS. Acta Physica Sinica, 2001, 50(9): 1774-1778.doi:10.7498/aps.50.1774 |
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