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Jin Cheng-Cheng, Ding Ling-Ling, Song Zi-Xin, Tao Hai-Jun.Improvement of performance of perovskite solar cells through BaTiO3doping regulated built-in electric field. Acta Physica Sinica, 2024, 73(3): 038801.doi:10.7498/aps.73.20231139 |
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Li Ya-Sha, Liu Shi-Chong, Liu Qing-Dong, Xia Yu, Hu Huo-Ran, Li Guang-Zhu.Electrical properties of ZnO/
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Deng Wen-Juan, Zhu Bin, Wang Zhuang-Fei, Peng Xin-Cun, Zou Ji-Jun.Resolution characteristics of varying doping and varying composition AlxGa1–xAs/GaAs reflective photocathodes. Acta Physica Sinica, 2022, 71(15): 157901.doi:10.7498/aps.71.20220244 |
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Lei Ting, Lü Wei-Ming, Lü Wen-Xing, Cui Bo-Yao, Hu Rui, Shi Wen-Hua, Zeng Zhong-Ming.Photogating effect in two-dimensional photodetectors. Acta Physica Sinica, 2021, 70(2): 027801.doi:10.7498/aps.70.20201325 |
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Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang.Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica, 2017, 66(15): 158501.doi:10.7498/aps.66.158501 |
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Deng Wen-Juan, Peng Xin-Cun, Zou Ji-Jun, Jiang Shao-Tao, Guo Dong, Zhang Yi-Jun, Chang Ben-Kang.Resolution characteristic of graded band-gap AlGaAs/GaAs transmission-mode photocathodes. Acta Physica Sinica, 2014, 63(16): 167902.doi:10.7498/aps.63.167902 |
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Zhao Feng-Qi, Zhang Min, Li Zhi-Qiang, Ji Yan-Ming.Effects of optical phonon and built-in electric field on the binding energy of bound polarons in a wurtzite In0.19Ga0.81N/GaN quantum well. Acta Physica Sinica, 2014, 63(17): 177101.doi:10.7498/aps.63.177101 |
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Cai Zhi-Peng, Yang Wen-Zheng, Tang Wei-Dong, Hou Xun.Theoretical analysis of response characteristics for the large exponential-doping transmission-mode GaAs photocathodes. Acta Physica Sinica, 2012, 61(18): 187901.doi:10.7498/aps.61.187901 |
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Zhang Yi-Jun, Niu Jun, Zhao Jing, Zou Ji-Jun, Chang Ben-Kang.Effect of exponential-doping structure on quantum yield of transmission-mode GaAs photocathodes. Acta Physica Sinica, 2011, 60(6): 067301.doi:10.7498/aps.60.067301 |
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Wu Hui-Ting, Wang Hai-Long, Jiang Li-Ming.Effect of different effective mass and electric field on the electronic structure in GaN/AlxGa1-xN spherical quantum dot. Acta Physica Sinica, 2009, 58(1): 465-470.doi:10.7498/aps.58.465 |
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Zou Ji-Jun, Chang Ben-Kang, Yang Zhi, Zhang Yi-Jun, Qiao Jian-Liang.Resolution characteristic of exponential-doping GaAs photocathodes. Acta Physica Sinica, 2009, 58(8): 5842-5846.doi:10.7498/aps.58.5842 |
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Xin Ping, Sun Cheng-Wei, Qin Fu-Wen, Wen Sheng-Ping, Zhang Qing-Yu.Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering. Acta Physica Sinica, 2007, 56(2): 1082-1087.doi:10.7498/aps.56.1082 |
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Zou Ji-Jun, Chang Ben-Kang, Yang Zhi.Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes. Acta Physica Sinica, 2007, 56(5): 2992-2997.doi:10.7498/aps.56.2992 |
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Shen Ye, Xing Huai-Zhong, Yu Jian-Guo, Lü Bin, Mao Hui-Bing, Wang Ji-Qing.Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Acta Physica Sinica, 2007, 56(6): 3453-3457.doi:10.7498/aps.56.3453 |
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CHENG WEN-QIN, CAI LI-HONG, XIE XIAO-GANG, WANG WEN-XIN, HU QIANG, ZHOU JUN-MING.PHOTOLUMINESCENCE SPECTRA OF AlyGa1-yAs/AlxGa1-xAs QUANTUM WELL FOR LASERS. Acta Physica Sinica, 1996, 45(2): 304-306.doi:10.7498/aps.45.304 |
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WANG LI-JUN, HOU HONG-QI, ZHOU JUN-MING, TANG RU-MING, LU ZHI-DONG, WANG YAN-YUN, HUANG YI.PHOTOLUMINESCENCE STUDIES ON InxGa1-xAs-GaAs STRAINED QUANTUM WELLS STRUCTURE UNDER HYDROSTATIC PRESSURE. Acta Physica Sinica, 1989, 38(7): 1086-1092.doi:10.7498/aps.38.1086 |
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JIA WEI-YI, LU ZHI-DONG, HUANG YI, ZHOU JUN-MING, LI YUNG-KANG, WANG YAN-YUN.PHOTOLUMINESCENCE DIAGNOSIS OF GaAs/GaAlAs MULTIPLE QUANTUM WELLS. Acta Physica Sinica, 1988, 37(6): 906-915.doi:10.7498/aps.37.906 |
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