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Liang Ying-Xin, Li Wei-Feng, Wei Jian-Hua, Jin Yong.Bipolaron mechanism of DX center in AlxGa1-xAs:Si. Acta Physica Sinica, 2010, 59(12): 8850-8855.doi:10.7498/aps.59.8850 |
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Chang Jun, Li Hua, Han Ying-Jun, Tan Zhi-Yong, Cao Jun-Cheng.Material growth and characterization of terahertz quantum-cascade lasers. Acta Physica Sinica, 2009, 58(10): 7083-7087.doi:10.7498/aps.58.7083 |
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Wang Chuan-Dao.Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots. Acta Physica Sinica, 2008, 57(2): 1091-1096.doi:10.7498/aps.57.1091 |
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Xin Ping, Sun Cheng-Wei, Qin Fu-Wen, Wen Sheng-Ping, Zhang Qing-Yu.Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering. Acta Physica Sinica, 2007, 56(2): 1082-1087.doi:10.7498/aps.56.1082 |
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Xu Xiao-Hua, Niu Zhi-Chuan, Ni Hai-Qiao, Xu Ying-Qiang, Zhang Wei, He Zheng-Hong, Han Qin, Wu Rong-Han, Jiang De-Sheng.Photoluminescence study of (GaAs1－xSbx/InyGa1－yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy. Acta Physica Sinica, 2005, 54(6): 2950-2954.doi:10.7498/aps.54.2950 |
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Shao Jia-Ping, Hu Hui, Guo Wen-Ping, Wang Lai, Luo Yi, Sun Chang-Zheng, Hao Zhi-Biao.Study on electroluminescence spectra of InxGa1－xN/GaN-MQWs materials with high indium contents. Acta Physica Sinica, 2005, 54(8): 3905-3909.doi:10.7498/aps.54.3905 |
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Chen Gui-Bin, Lu Wei, Liao Zhong-Lin, Li Zhi-Feng, Chai Wei-Ying, Shen Xue-Chu, Chen Chang-Ming, Zhu De-Zhang, Hu Jun, Li Ming-Qian.. Acta Physica Sinica, 2002, 51(3): 659-662.doi:10.7498/aps.51.659 |
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MIU ZHONG-LIN, CHEN PING-PING, LU WEI, XU WEN-LAN, LI ZHI-FENG, CAI WEI-YING.. Acta Physica Sinica, 2001, 50(1): 111-115.doi:10.7498/aps.50.111 |
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Li Na, Yuan Xian-Zhang, Li Ning, Lu Wei, Li Zhi-Feng, Dou Hong-Fei, Shen Xue-Chu, Jin Li, Li Hong-Wei, Zhou Jun-Ming, Huang Yi.. Acta Physica Sinica, 2000, 49(4): 797-801.doi:10.7498/aps.49.797 |
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DING GUO-QING.INVESTIGATION OF TENSILE-STRAINED,LONG WAVELENGTH In1-xGaxAsyP1-y/InP WITH QUANTUM-WELL STRUCTURE BY PHTOLUMINESCENCE MEASUREMENTS. Acta Physica Sinica, 1998, 47(9): 1564-1570.doi:10.7498/aps.47.1564 |
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CHENG WEN-QING, CAI LI-HONG, CHEN HONG, ZHOU JUN-MING, XIE XIAO-GANG, MEI XIAO-BING, HUANG YI, ZHAO TIE-NAN, ZHU GE.. Acta Physica Sinica, 1995, 44(1): 142-144.doi:10.7498/aps.44.142 |
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WEI YA-YI, SHEN JIN-XI, ZHENG GUO-ZHEN, GUO SHAO-LING, TANG DING-YUAN, PENG ZHENG-FU, ZHANG YUN-QIANG.STUDY OF SdH OSCILLATIONS OF 2-D ELECTRON GAS IN Si δ-DOPED AlxGa1-xAs/GaAs HETEROJUNCTION. Acta Physica Sinica, 1994, 43(2): 282-288.doi:10.7498/aps.43.282 |
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CHEN WEI-DE, GUI YU-DE.DETERMINATION OF AlxGa1-xAs AUGER SENSITIVITY FACTORS. Acta Physica Sinica, 1994, 43(4): 673-677.doi:10.7498/aps.43.673 |
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CHENG WEN-QIN, MEI XIAO-BING, ZHOU JUN-MING, LIU YU-LONG, ZHU KE.PHOTOLUMINESCENCE OF Be-DOPED-GaAs QUANTUM WELLS. Acta Physica Sinica, 1993, 42(5): 864-866.doi:10.7498/aps.42.864 |
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PAN SHAO-HUA, CHEN ZHENG-HAO, FENG SI-MIN, CUI DA-FU, YANG GUO-ZHEN.STUDY OF INTERSUBBAND OPTICAL TRANSITIONS IN GaAs/AlxGa1-xAs SUPERLATTICES. Acta Physica Sinica, 1990, 39(12): 2011-2018.doi:10.7498/aps.39.2011 |
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CHI JIAN-GANG, ZHAO WEN-QIN, LI AI-ZHEN.PHOTOREFLECTANCE SPECTROSCOPY OF MBE GaAs1-x Sbx/GaAs STRAINED LAYER QUANTUM WELL. Acta Physica Sinica, 1989, 38(10): 1710-1716.doi:10.7498/aps.38.1710 |
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WANG LI-JUN, HOU HONG-QI, ZHOU JUN-MING, TANG RU-MING, LU ZHI-DONG, WANG YAN-YUN, HUANG YI.PHOTOLUMINESCENCE STUDIES ON InxGa1-xAs-GaAs STRAINED QUANTUM WELLS STRUCTURE UNDER HYDROSTATIC PRESSURE. Acta Physica Sinica, 1989, 38(7): 1086-1092.doi:10.7498/aps.38.1086 |
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HUANG CHUN-HUI, LU XUE-KUN, DING XUN-MIN.STUDY ON THE SURFACE PROPERTIES OF AlxGa1-xAs(100). Acta Physica Sinica, 1989, 38(12): 1968-1973.doi:10.7498/aps.38.1968 |
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JIA WEI-YI, LU ZHI-DONG, HUANG YI, ZHOU JUN-MING, LI YUNG-KANG, WANG YAN-YUN.PHOTOLUMINESCENCE DIAGNOSIS OF GaAs/GaAlAs MULTIPLE QUANTUM WELLS. Acta Physica Sinica, 1988, 37(6): 906-915.doi:10.7498/aps.37.906 |
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